CN108225588A - A kind of temperature sensor and temperature checking method - Google Patents
A kind of temperature sensor and temperature checking method Download PDFInfo
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- CN108225588A CN108225588A CN201711467915.3A CN201711467915A CN108225588A CN 108225588 A CN108225588 A CN 108225588A CN 201711467915 A CN201711467915 A CN 201711467915A CN 108225588 A CN108225588 A CN 108225588A
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- triode
- temperature coefficient
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
Abstract
The present invention provides a kind of temperature sensor and temperature checking method, including：Positive temperature coefficient current generating module；Negative temperature parameter current generation module；The detection voltage generating module of detection voltage is obtained after positive temperature coefficient electric current and negative temperature parameter current are subtracted each other；Increase the output voltage adjustment module of the amplitude of oscillation of the detection voltage.The susceptibility of the temperature sensor of the present invention and the output voltage of temperature checking method is high；It is linear can the DC level of output voltage to be adjusted by adjustable impedance；The amplitude of oscillation that output voltage varies with temperature is big；Suitable for CMOS systems on chip.
Description
Technical field
The present invention relates to sensor detection field, more particularly to a kind of temperature sensor and temperature checking method.
Background technology
Temperature is a basic physical phenomenon, it is using most common, most important technological parameter, nothing in production process
By being industrial and agricultural production or scientific research and the modernization of national defense, temperature survey is all be unable to do without, therefore, in various sensors,
Temperature sensor is most widely used one kind.Integrated temperature sensor was come out in the 1980s, it is in PN junction
Grow up on the basis of temperature sensor, there is small, stability height, lower-price characteristic.
At present, the main realization method of CMOS integrated temperature sensors includes：Temperature sensor and base based on metal-oxide-semiconductor
The CMOS BJT temperature sensors of parasitical bipolar transistor (BJT) under CMOS technology.The common temperature based on metal-oxide-semiconductor
There are two ways to characteristic realizes temperature sensor：1) using in sub-threshold status metal-oxide-semiconductor drain-source current have with it is exhausted
To temperature, the characteristic of directly proportional (PTAT) realizes temperature sensing.Due to metal-oxide-semiconductor in the case of a high temperature, the leakage current of its own
Clearly so that PTAT characteristics are by serious possessed by the drain-source current of the metal-oxide-semiconductor under high temperature under sub-threshold status
Influence, thus using metal-oxide-semiconductor subthreshold current PTAT characteristics this method come the thermometric model of temperature sensor realized
Enclosing cannot be too wide, otherwise can seriously affect its temperature measurement accuracy；2) using the carrier mobility in metal-oxide-semiconductor under strong inversion state with
And threshold voltage realizes temperature sensor dependent on temperature characterisitic as temperature.The advantages of this method be temperature accuracy very
Good, major defect is to be affected by technological fluctuation, must there is fine tuning on a large scale and calibration work in high performance requirements
Make.
CMOS BJT temperature sensors are to be proportional to temperature using the parasitical bipolar transistor generation under CMOS technology
Voltage characteristic realizes the detection of temperature.Compared to MOS temperature sensors, the structure linearity is preferably and process stabilizing.Such as Fig. 1
The circuit structure of common COMS temperature sensors 1 is shown, including：PNP type triode is connected with current source Is；Buffer 11
Positive input connects the emitter of the PNP type triode, and the reverse input end of the buffer 11 is connected with output terminal, institute
State output terminal of the output terminal of buffer 11 as the circuit structure 1 of the COMS temperature sensors.Output voltage Vout meets：Its temperature susceplibility is only by the forward conduction of PN junction electricity
The temperature coefficient of pressure determines, it is difficult to improve its temperature susceplibility.For high-precision temperature sensor, how by temperature sensing
The temperature susceplibility of device is set using modes such as resistance ratio, current mirror ratios, and then raising temperature susceplibility has become ability
One of field technique personnel's urgent problem to be solved.
Invention content
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of temperature sensors and temperature to examine
Survey method is low for solving temperature susceplibility in the prior art, it is difficult to the problem of improving.
In order to achieve the above objects and other related objects, the present invention provides a kind of temperature sensor, the temperature sensor
It includes at least：
Positive temperature coefficient current generating module, for generating the electric current of positive temperature coefficient；
Negative temperature parameter current generation module, for generating the electric current of negative temperature coefficient；
Voltage generating module is detected, receives the electric current of the positive temperature coefficient and the electric current of the negative temperature coefficient, and will
Detection voltage is obtained after the electric current of the positive temperature coefficient and the current subtraction of the negative temperature coefficient, the detection voltage is with treating
Testing temperature is directly proportional；
Output voltage adjusts module, connects the detection voltage generating module, for increasing the amplitude of oscillation of the detection voltage,
And then obtain the output voltage of long arc.
Preferably, the positive temperature coefficient current generating module includes the first PMOS tube, the second PMOS tube, the 3rd PMOS
Pipe, first resistor, second resistance, the first triode, the second triode and the first amplifier；
Source connection supply voltage, the drain terminal of first PMOS tube pass through the first resistor and the described 1st successively
It is grounded after pole pipe；
Source connection supply voltage, the drain terminal of second PMOS tube pass through the second resistance and the described 2nd 3 successively
It is grounded after pole pipe；
The input terminal of first amplifier connects the drain terminal of first PMOS tube and the second resistance and institute respectively
State the connecting node of the second triode, output terminal connects first PMOS tube, second PMOS tube and the 3rd PMOS
The grid end of pipe；
The source of the third PMOS tube connects supply voltage, drain terminal as the positive temperature coefficient current generating module
Output terminal.
It is highly preferred that first triode and second triode are PNP type triode；First triode
Emitter connects the first resistor, and the base stage of first triode connect with the collector of first triode and is followed by
Ground；The emitter of second triode connects the second resistance, the base stage of second triode and the two or three pole
It is grounded after the collector connection of pipe.
It is highly preferred that first triode and second triode are NPN type triode；First triode
Collector connect the first resistor, the emitter ground connection of first triode with base stage；The current collection of second triode
Pole connect the second resistance, the emitter ground connection of second triode with base stage.
It is highly preferred that the negative temperature parameter current generation module includes the second amplifier, NMOS tube and 3rd resistor；
The input terminal of second amplifier connects the connecting node of first triode and the first resistor respectively
And source, the grid end of the output terminal connection NMOS tube of the NMOS tube, the source of the NMOS tube is by third electricity
It is grounded after resistance, the output terminal of the drain terminal of the NMOS tube as the negative temperature parameter current generation module；
Or, the input terminal of second amplifier connects the connection section of second triode and the second resistance respectively
The source of point and the NMOS tube, output terminal connect the grid end of the NMOS tube, and the source of the NMOS tube passes through the third
It is grounded after resistance, the output terminal of the drain terminal of the NMOS tube as the negative temperature parameter current generation module.
Preferably, the output voltage adjustment module includes third amplifier, the 4th resistance, the 5th resistance and the 6th electricity
Resistance；One end connection detection voltage, the other end of 4th resistance connect one end of the 5th resistance, the 5th electricity
The other end of resistance connect one end of the 6th resistance, the 6th resistance other end ground connection, the third amplifier it is defeated
Enter the connecting node that end connects a reference voltage and the 5th resistance and the 6th resistance respectively, output terminal is connected to described
Between 4th resistance and the 5th resistance.
It is highly preferred that the reference voltage is temperature independent reference voltage.
It is highly preferred that the 6th resistance is variable resistance, for adjusting the absolute value of the output voltage.
Preferably, the temperature sensor further includes the analog-to-digital conversion for being connected to the output voltage adjustment module output terminal
Module, the analog-to-digital conversion module are successive approximation analog-to-digital conversion module.
In order to achieve the above objects and other related objects, the present invention also provides a kind of temperature checking method, the temperature inspections
Survey method includes at least：
A positive temperature coefficient electric current is generated, the positive temperature coefficient electric current increases with the increase for treating testing temperature；
A negative temperature parameter current is generated, the negative temperature parameter current reduces with the increase for treating testing temperature；
Detection voltage, the detection electricity are obtained after the positive temperature coefficient electric current and the negative temperature parameter current are subtracted each other
Pressure treats that testing temperature is directly proportional to described；
Increase the amplitude of oscillation of the detection voltage, obtain output voltage.
Preferably, when the positive temperature coefficient electric current is more than the negative temperature parameter current, electric current is absorbed from output terminal；
When the positive temperature coefficient electric current is less than the negative temperature parameter current, electric current is provided to output terminal；And then increase output electricity
The amplitude of oscillation of pressure.
Preferably, the output voltage meets following relational expression：
Wherein, Vout is output voltage, and VREF is reference voltage, and R5 is the 5th resistance, and R6 is the 6th resistance, and Δ VBE is
Positive temperature coefficient voltage, R1 are the impedance that the positive temperature coefficient electric current flows through, and N is the times magnification of the positive temperature coefficient electric current
Number, VBE are negative temperature coefficient voltage, and R3 is the impedance that the negative temperature parameter current flows through, and R4 is positive temperature coefficient electricity
The impedance that the difference of stream and the negative temperature parameter current flows through.
It is highly preferred that by adjusting the resistance value of the 6th resistance to adjust the absolute value of the output voltage, and then it is right
Temperature is corrected.
It is highly preferred that the reference voltage is temperature independent reference voltage.
Preferably, the susceptibility that the output voltage varies with temperature meets following relationship：
Wherein, S is the susceptibility of the output voltage, and n is two triodes for generating the positive temperature coefficient electric current
Emit junction area ratio, k is Boltzmann constant, and R1 is the impedance that the positive temperature coefficient electric current flows through, and q is the charge of electronics
Amount, N are the amplification factor of the positive temperature coefficient electric current, and R4 is the positive temperature coefficient electric current and the negative temperature parameter current
The impedance flowed through of difference, Ic is the collector current for the triode for generating negative temperature coefficient, and Is be generation negative temperature coefficient
The reverse saturation current of triode, R3 are the impedance that the negative temperature parameter current flows through.
Preferably, the temperature checking method further includes：The output voltage is converted into digital signal.
As described above, the temperature sensor and temperature checking method of the present invention, have the advantages that：
1st, the susceptibility of the output voltage of temperature sensor of the invention and temperature checking method is high.
2nd, temperature sensor and temperature checking method of the invention can adjust the direct current of output voltage by adjustable impedance
Level is linear.
3rd, the amplitude of oscillation that the output voltage of temperature sensor of the invention and temperature checking method varies with temperature is big.
Description of the drawings
Fig. 1 is shown as the structure diagram of COMS temperature sensors of the prior art.
Fig. 2 is shown as the structure diagram of the temperature sensor of the present invention.
Component label instructions
1 COMS temperature sensors
11 buffers
2 temperature sensors
21 positive temperature coefficient current generating modules
211 first amplifiers
22 negative temperature parameter current generation modules
221 second amplifiers
23 detection voltage generating modules
24 output voltages adjust module
241 third amplifiers
25 analog-to-digital conversion modules
S1~S5 steps
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
Please refer to Fig. 2.It should be noted that the diagram provided in the present embodiment only illustrates the present invention's in a schematic way
Basic conception, component count, shape when only display is with related component in the present invention rather than according to actual implementation in schema then
And size is drawn, kenel, quantity and the ratio of each component can be a kind of random change during actual implementation, and its assembly layout
Kenel may also be increasingly complex.
As shown in Fig. 2, the present invention provides a kind of temperature sensor 2, the temperature sensor 2 includes：
Positive temperature coefficient current generating module 21, negative temperature parameter current generation module 22, detection voltage generating module 23,
Output voltage adjusts module 24 and analog-to-digital conversion module 25.
As shown in Fig. 2, the positive temperature coefficient current generating module 21 is used to generate the electric current I1 of positive temperature coefficient.
Specifically, as shown in Fig. 2, the positive temperature coefficient current generating module 21 includes the first PMOS tube PM1, second
PMOS tube PM2, third PMOS tube PM3, first resistor R1, second resistance R2, the first triode Q1, the second triode Q2 and first
Amplifier 211.The source of the first PMOS tube PM1 connects supply voltage, drain terminal connects the first resistor R1, and described first
The other end of resistance R1 connects the first triode Q1.In the present embodiment, the first triode Q1 is three pole of positive-negative-positive
Pipe, the emitter of the first triode Q1 connect the first resistor R1, the base stage of the first triode Q1 and described the
It is grounded after the collector connection of one triode Q1.Described in source connection supply voltage, the drain terminal of the second PMOS tube PM2 connects
The other end of second resistance R2, the second resistance R2 connect the second triode Q2.In the present embodiment, the described 2nd 3
Pole pipe Q2 is PNP type triode, and the emitter of the second triode Q2 connects the second resistance R2, second triode
The base stage of Q2 is grounded after being connect with the collector of the second triode Q2.In the present embodiment, first amplifier 211
Inverting input connects the drain terminal of the first PMOS tube PM1, normal phase input end connect the second triode Q2 emitter,
Output terminal connects the grid end of the first PMOS tube PM1, the second PMOS tube PM2 and the third PMOS tube PM3, and described the
The source connection supply voltage of three PMOS tube PM3, the first PMOS tube PM1, the second PMOS tube PM2 and the third
PMOS tube PM3 forms current mirror, and the drain terminal of third PMOS tube PM3 exports the positive temperature coefficient electric current I1.In actual use,
The first triode Q1 and the second triode Q2 can be NPN type triode, and collector connect resistance, hair with base stage
Emitter grounding does not repeat one by one herein；The polarity of the input terminal of first amplifier 211 is replaceable, by increasing phase inverter
It waits devices that can realize identical logic, is not limited with the specific connection mode of the present embodiment.
As shown in Fig. 2, the negative temperature parameter current generation module 22 is used to generate the electric current I2 of negative temperature coefficient.
Specifically, as shown in Fig. 2, the negative temperature parameter current generation module 22 includes the second amplifier 221, NMOS tube
NM1 and 3rd resistor R3.The normal phase input end of second amplifier 221 connects the emitter, anti-of the second triode Q2
Phase input terminal connects the source of the NMOS tube NM1, output terminal connects the grid end of the NMOS tube NM1.The NMOS tube NM1's
Source is grounded after the 3rd resistor R3, and the drain terminal of the NMOS tube NM1 exports the negative temperature parameter current I2.In reality
Border in use, negative temperature coefficient voltage can be provided by the emitter of the first triode Q1, i.e., described second amplifier 221
Input terminal can connect the emitter of the first triode Q1 and the source of the NMOS tube NM1 respectively, using the present embodiment as
Limit；The polarity of the input terminal of second amplifier 221 is replaceable, and identical patrol can be realized by increasing the devices such as phase inverter
Volume, it is not limited with the specific connection mode of the present embodiment.
As shown in Fig. 2, the detection voltage generating module 23 receives the positive temperature coefficient electric current I1 and the negative temperature
Coefficient current I2, and detection voltage is obtained after the positive temperature coefficient electric current I1 and the negative temperature parameter current I2 are subtracted each other,
The detection voltage is to treating that testing temperature is directly proportional.
Specifically, in the present embodiment, the positive temperature coefficient current generating module 21 and the negative temperature parameter current
The output terminal of generation module 22, which is connected, can be realized the phase of the positive temperature coefficient electric current I1 and the negative temperature parameter current I2
Subtracting, the drain terminal of the third PMOS tube PM3 and the NMOS tube NM1 are to export the voltage directly proportional to the two difference, therefore,
In the present embodiment, it is not independently arranged subtraction circuit, can effectively simplify circuit structure, saves cost.In actual use, it can receive
Have after the positive temperature coefficient electric current I1 and the negative temperature parameter current I2 by subtracter etc. the circuit of subtraction function with
It realizes subtracting each other for the two, does not repeat one by one herein, those skilled in the art's adaptability on the basis of disclosure of the present invention
The specific embodiment of the present invention is adjusted to realize the design of the present invention.
As shown in Fig. 2, the output voltage adjustment module 24 connects the detection voltage generating module 23, for increasing
The amplitude of oscillation of detection voltage is stated, and then obtains the output voltage of long arc.
Specifically, as shown in Fig. 2, the output voltage adjustment module 24 include third amplifier 241, the 4th resistance R4,
5th resistance R5 and the 6th resistance R6.One end connection detection voltage of the 4th resistance R4, other end connection described the
One end of five resistance R5, the other end of the 5th resistance R5 connect one end of the 6th resistance R6, the 6th resistance R6
The other end ground connection.In the present embodiment, the positive input of the third amplifier 141 connects the second PMOS tube PM2
Drain terminal (obtain temperature independent reference voltage), inverting input be connected to the 5th resistance R5 and the 6th resistance
Between R6, output terminal is connected between the 4th resistance R4 and the 5th resistance R5.In actual use, the third is put
Big device 241 can be directly connected to a generating circuit from reference voltage to obtain temperature independent reference voltage, not using the present embodiment as
It limits, based on the temperature independent reference voltage incidentally generated in the positive temperature coefficient current generating circuit 11 in the present embodiment
As the reference voltage, it can effectively simplify circuit structure, save cost；The polarity of the input terminal of the third amplifier 241 can be more
It changes, can realize identical logic by increasing the devices such as phase inverter, be not limited with the specific connection mode of the present embodiment.
More specifically, in the present embodiment, the 6th resistance R6 is variable resistance, by adjusting the 6th resistance R6
Resistance value can realize the adjusting of the absolute value to the output voltage Vout.
As shown in Fig. 2, the analog-to-digital conversion module 25 is connected to the output terminal of the output voltage adjustment module 24, it is used for
The output voltage Vout directly proportional to treating testing temperature is converted into digital signal.
Specifically, as shown in Fig. 2, the analog-to-digital conversion module 25 is successive approximation analog-to-digital conversion module, concrete structure
It does not repeat one by one herein.
Such as Fig. 2 institutes, the present invention also provides a kind of temperature checking methods, in the present embodiment, the temperature checking method base
It is realized in the temperature sensor 2, including：
Step S1：Positive temperature coefficient electric current an I1, the positive temperature coefficient electric current I1 is generated with the increase for treating testing temperature and
Increase.
Specifically, first amplifier 211 makes the drain terminal electricity of the first PMOS tube PM1 by empty short empty disconnected principle
The emitter voltage VBE2 approximately equals of VBE1 and the second triode Q2 are pressed, then flowing through the electric current of the first resistor R1 expires
Foot：Pass through the first PMOS tube PM1, the second PMOS tube PM2 and the third PMOS tube PM3 structures
Into current mirror, the electric current for flowing through the first resistor R1 is mirrored onto the drain terminal of the third PMOS tube PM3, and obtains described
Positive temperature coefficient electric current I1, the positive temperature coefficient electric current I1 have the characteristic with absolute temperature is proportional to (PTAT).By setting
The breadth length ratio adjustable mirror picture electricity of the fixed first PMOS tube PM1, the second PMOS tube PM2 and third PMOS tube PM3
The amplification factor of stream, in the present embodiment, the positive temperature coefficient electric current I1 meet following relationship：Wherein, N is the amplification factor of the positive temperature coefficient electric current I1, and N is arbitrary more than zero
Number.
Step S2：Negative temperature parameter current an I2, the negative temperature parameter current I2 is generated with the increase for treating testing temperature and
Reduce.
Specifically, second amplifier 221 by empty short empty disconnected principle make the NMOS tube NM1 source voltage terminal and
Emitter voltage VBE2 (or emitter voltage VBE1 of the first triode Q1) approximately equal of the second triode Q2,
The electric current for then flowing through the 3rd resistor R3 meets：The drain terminal of the NMOS tube NM1 exports the negative temperature coefficient electricity
I2 is flowed, the negative temperature parameter current I2 has the characteristic of (CTAT) of being inversely proportional with absolute temperature.
Step S3：Detection electricity is obtained after the positive temperature coefficient electric current I1 and the negative temperature parameter current I2 are subtracted each other
Pressure, the detection voltage treat that testing temperature is directly proportional to described.
Specifically, in the present embodiment, it is described after the third PMOS tube PM3 is connected with the drain terminal of the NMOS tube NM1
The drain terminal output voltage of the third PMOS tube PM3 and NMOS tube NM1 is the positive temperature coefficient electric current I1 and the subzero temperature
Degree coefficient current I2 obtains detection voltage after subtracting each other, without setting independent circuits.
Step S4：Increase the amplitude of oscillation of the detection voltage, obtain output voltage Vout.
Specifically, the voltage at the 4th resistance R4 both ends meets following relationship, and the electricity at the 4th resistance R4 both ends
Pressure and absolute temperature is proportional to：The third is put
Big device 241 makes the voltage and reference voltage between the 6th resistance R6 and the 5th resistance R5 by empty short empty disconnected principle
VREF approximately equals, in the present embodiment, the reference voltage VREF are the drain terminal output of the second PMOS tube PM2 and temperature
Spend unrelated reference voltage；Then the voltage of 241 output terminal of third amplifier meets：Therefore institute
It states output voltage and meets following relational expression：
Wherein, Δ VBE is positive temperature coefficient voltage, is met：Δ VBE=VBE2-VBE1；VBE is negative temperature coefficient voltage,
The emitter voltage of the first triode Q1 or the second triode Q2 of the present invention can be selected.
More specifically, the DC level of the output voltage Vout can be adjusted by adjusting the resistance value of the 6th resistance R6
It is whole, and then realize the correction to temperature.
Specifically, when the positive temperature coefficient electric current I1 is more than the negative temperature parameter current I2, the third amplification
Device 241 absorbs electric current from the output terminal of the temperature sensor 2,When the positive temperature system
When number electric current I1 are less than the negative temperature parameter current I2, the third amplifier 241 is to the output terminal of the temperature sensor 2
Electric current is provided,Effective amplitude of oscillation of the output voltage Vout is able to compared to the prior art
It greatly improves.
Specifically, the positive temperature coefficient electric current I1 generations temperature susceplibility S1 is's
Voltage；The negative temperature parameter current I2 generates temperature susceplibility S2Voltage, then it is described defeated
Go out the susceptibility that voltage Vout is varied with temperature and meet following relationship：
Wherein, n is the transmitting junction area ratio for two triodes for generating the positive temperature coefficient electric current, and k is Boltzmann
Constant, q are the quantity of electric charge of electronics, and N is the amplification factor of the positive temperature coefficient electric current I1, and Ic is generate negative temperature coefficient three
The collector current of pole pipe, Is are the reverse saturation current for the triode for generating negative temperature coefficient.Compared to the temperature of the prior art
Degree susceptibility greatly promotes, and temperature susceplibility can be set by resistance value, current mirror ratio, flexibility bigger.
Step S5：The output voltage Vout is converted into digital signal.
Specifically, in the present embodiment, the output voltage Vout is converted by digital letter using the method for Approach by inchmeal
Number, so that following digital circuit handles signal.
The CMOS temperature transmitter circuit of the high temperature sensitivity of the present invention and the method for detecting temperature, generate positive temperature system
Number electric current, negative temperature parameter current, two electric currents seek difference and export the voltage to vary with temperature by impedance transformation.Voltage it is exhausted
Size can be adjusted by adjusting branch.The present invention is especially suitable for the designs of temperature sensor in integrated circuit.
In conclusion the present invention provides a kind of temperature sensor and temperature checking method, including：Positive temperature coefficient electric current produces
Raw module, for generating the electric current of positive temperature coefficient；Negative temperature parameter current generation module, for generating the electricity of negative temperature coefficient
Stream；Detect voltage generating module, receive the electric current of the positive temperature coefficient and the electric current of the negative temperature coefficient, and by it is described just
Detection voltage is obtained after the electric current of temperature coefficient and the current subtraction of the negative temperature coefficient, the detection voltage is with treating testing temperature
It is directly proportional；Output voltage adjusts module, connects the detection voltage generating module, for increasing the amplitude of oscillation of the detection voltage,
And then obtain the output voltage of long arc.Generate a positive temperature coefficient electric current, the positive temperature coefficient electric current is with treating testing temperature
Increase and increase；A negative temperature parameter current is generated, the negative temperature parameter current reduces with the increase for treating testing temperature；By institute
State and detection voltage obtained after positive temperature coefficient electric current and the negative temperature parameter current are subtracted each other, the detection voltage with it is described to be measured
Temperature is directly proportional；Increase the amplitude of oscillation of the detection voltage, obtain output voltage.The temperature sensor and temperature detecting method of the present invention
The susceptibility of the output voltage of method is high；It is linear can the DC level of output voltage to be adjusted by adjustable impedance；Output voltage with
The amplitude of oscillation of temperature change is big；Suitable for CMOS systems on chip.So the present invention effectively overcomes various shortcoming of the prior art
And has high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (16)
1. a kind of temperature sensor, which is characterized in that the temperature sensor includes at least：
Positive temperature coefficient current generating module, for generating the electric current of positive temperature coefficient；
Negative temperature parameter current generation module, for generating the electric current of negative temperature coefficient；
Voltage generating module is detected, receives the electric current of the positive temperature coefficient and the electric current of the negative temperature coefficient, and by described in
Detection voltage is obtained after the electric current of positive temperature coefficient and the current subtraction of the negative temperature coefficient, the detection voltage is with treating thermometric
It spends directly proportional；
Output voltage adjusts module, connects the detection voltage generating module, for increasing the amplitude of oscillation of the detection voltage, and then
Obtain the output voltage of long arc.
2. temperature sensor according to claim 1, it is characterised in that：The positive temperature coefficient current generating module includes
First PMOS tube, the second PMOS tube, third PMOS tube, first resistor, second resistance, the first triode, the second triode and
One amplifier；
Source connection supply voltage, the drain terminal of first PMOS tube pass through the first resistor and first triode successively
After be grounded；
Source connection supply voltage, the drain terminal of second PMOS tube pass through the second resistance and second triode successively
After be grounded；
The input terminal of first amplifier connects the drain terminal of first PMOS tube and the second resistance and described the respectively
The connecting node of two triodes, output terminal connect first PMOS tube, second PMOS tube and the third PMOS tube
Grid end；
Output of source the connection supply voltage, drain terminal of the third PMOS tube as the positive temperature coefficient current generating module
End.
3. temperature sensor according to claim 2, it is characterised in that：First triode and second triode
For PNP type triode；The emitter of first triode connects the first resistor, the base stage of first triode and institute
It is grounded after stating the collector connection of the first triode；The emitter of second triode connects the second resistance, and described the
The base stage of two triodes is grounded after being connect with the collector of second triode.
4. temperature sensor according to claim 2, it is characterised in that：First triode and second triode
For NPN type triode；The collector of first triode connect the first resistor, the hair of first triode with base stage
Emitter grounding；The collector of second triode connect the second resistance, the emitter of second triode with base stage
Ground connection.
5. temperature sensor according to claim 2, it is characterised in that：The negative temperature parameter current generation module includes
Second amplifier, NMOS tube and 3rd resistor；
The input terminal of second amplifier connects connecting node and the institute of first triode and the first resistor respectively
The source of NMOS tube, the grid end of the output terminal connection NMOS tube are stated, the source of the NMOS tube is after the 3rd resistor
Ground connection, the output terminal of the drain terminal of the NMOS tube as the negative temperature parameter current generation module；
Or, the input terminal of second amplifier connect respectively second triode and the second resistance connecting node and
The source of the NMOS tube, output terminal connect the grid end of the NMOS tube, and the source of the NMOS tube passes through the 3rd resistor
After be grounded, the output terminal of the drain terminal of the NMOS tube as the negative temperature parameter current generation module.
6. temperature sensor according to claim 1, it is characterised in that：The output voltage adjustment module is put including third
Big device, the 4th resistance, the 5th resistance and the 6th resistance；One end connection detection voltage, the other end of 4th resistance connect
One end of the 5th resistance is connect, the other end of the 5th resistance connects one end of the 6th resistance, the 6th resistance
Other end ground connection, the input terminal of the third amplifier connects a reference voltage and the 5th resistance and the described 6th respectively
The connecting node of resistance, output terminal are connected between the 4th resistance and the 5th resistance.
7. temperature sensor according to claim 6, it is characterised in that：The reference voltage is temperature independent benchmark
Voltage.
8. temperature sensor according to claim 6, it is characterised in that：6th resistance is variable resistance, for adjusting
Save the absolute value of the output voltage.
9. temperature sensor according to claim 1, it is characterised in that：The temperature sensor further include be connected to it is described
Output voltage adjusts the analog-to-digital conversion module of module output terminal, and the analog-to-digital conversion module is successive approximation analog-to-digital conversion mould
Block.
10. a kind of temperature checking method, which is characterized in that the temperature checking method includes at least：
A positive temperature coefficient electric current is generated, the positive temperature coefficient electric current increases with the increase for treating testing temperature；
A negative temperature parameter current is generated, the negative temperature parameter current reduces with the increase for treating testing temperature；
Obtain detection voltage after the positive temperature coefficient electric current and the negative temperature parameter current are subtracted each other, the detection voltage with
It is described to treat that testing temperature is directly proportional；
Increase the amplitude of oscillation of the detection voltage, obtain output voltage.
11. temperature checking method according to claim 10, it is characterised in that：When the positive temperature coefficient electric current is more than institute
When stating negative temperature parameter current, electric current is absorbed from output terminal；When the positive temperature coefficient electric current is less than negative temperature coefficient electricity
During stream, electric current is provided to output terminal；And then increase the amplitude of oscillation of output voltage.
12. temperature checking method according to claim 10, it is characterised in that：The output voltage meets following relationship
Formula：
Wherein, Vout is output voltage, and VREF is reference voltage, and R5 is the 5th resistance, and R6 is the 6th resistance, and Δ VBE is positive temperature
Coefficient voltages are spent, R1 is the impedance that the positive temperature coefficient electric current flows through, and N is the amplification factor of the positive temperature coefficient electric current,
VBE is negative temperature coefficient voltage, and R3 is the impedance flowed through of the negative temperature parameter current, R4 for the positive temperature coefficient electric current with
The impedance that the difference of the negative temperature parameter current flows through.
13. temperature checking method according to claim 12, it is characterised in that：By the resistance value for adjusting the 6th resistance
To adjust the absolute value of the output voltage, and then temperature is corrected.
14. temperature checking method according to claim 12, it is characterised in that：The reference voltage is temperature independent
Reference voltage.
15. temperature checking method according to claim 10, it is characterised in that：The output voltage varies with temperature quick
Sensitivity meets following relationship：
Wherein, S is the susceptibility of the output voltage, and n is the transmitting for two triodes for generating the positive temperature coefficient electric current
Junction area ratio, k are Boltzmann constant, and R1 is the impedance that the positive temperature coefficient electric current flows through, and q is the quantity of electric charge of electronics, and N is
The amplification factor of the positive temperature coefficient electric current, R4 are the positive temperature coefficient electric current and the difference of the negative temperature parameter current
The impedance flowed through, Ic are the collector current for the triode for generating negative temperature coefficient, and Is is the triode for generating negative temperature coefficient
Reverse saturation current, R3 is the impedance flowed through of the negative temperature parameter current.
16. temperature checking method according to claim 10, it is characterised in that：The temperature checking method further includes：It will
The output voltage is converted into digital signal.
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| CN110806228A (en) * | 2019-04-24 | 2020-02-18 | 神盾股份有限公司 | Calibration circuit for sensor and related sensor |
| CN110968144A (en) * | 2019-11-25 | 2020-04-07 | 上海申矽凌微电子科技有限公司 | Analog output method, system, medium, and apparatus based on temperature sensor circuit |
| CN111521285A (en) * | 2020-04-30 | 2020-08-11 | 深圳芯能半导体技术有限公司 | High-voltage integrated circuit and temperature detection circuit thereof |
| CN111521284A (en) * | 2020-04-30 | 2020-08-11 | 深圳芯能半导体技术有限公司 | Temperature detection circuit and integrated circuit |
| CN113566997A (en) * | 2021-07-26 | 2021-10-29 | 深圳青铜剑技术有限公司 | Temperature sensing circuit |
| CN113758606A (en) * | 2021-10-14 | 2021-12-07 | 成都微光集电科技有限公司 | Temperature sensor and temperature measuring equipment |
| CN113884208A (en) * | 2021-09-09 | 2022-01-04 | 芯原微电子（成都）有限公司 | High-precision over-temperature detection circuit |
| CN114812846A (en) * | 2022-04-13 | 2022-07-29 | 湖南四灵电子科技有限公司 | Temperature sampling circuit compatible with positive and negative temperature coefficient sensors |
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Address after: Zhangjiang Building 20A, 289 Chunxiao Road, China (Shanghai) Free Trade Pilot Area, Pudong New Area, Shanghai Applicant after: Xinyuan Microelectronics (Shanghai) Co., Ltd. Applicant after: VeriSilicon Microelectronics (Beijing) Co., Ltd. Applicant after: VERISILICON MICROELECTRONICS (CHENGDU) CO., LTD. Applicant after: Core holdings limited company Address before: 201203 Zhangjiang Building 20A, 560 Songtao Road, Zhangjiang High-tech Park, Pudong New Area, Shanghai Applicant before: VeriSilicon Microelectronics (Shanghai) Co., Ltd. Applicant before: VeriSilicon Microelectronics (Beijing) Co., Ltd. Applicant before: VERISILICON MICROELECTRONICS (CHENGDU) CO., LTD. Applicant before: Core holdings limited company |
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