CN207265079U - A kind of deep ultraviolet LED epitaxial structure - Google Patents
A kind of deep ultraviolet LED epitaxial structure Download PDFInfo
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- CN207265079U CN207265079U CN201720340258.5U CN201720340258U CN207265079U CN 207265079 U CN207265079 U CN 207265079U CN 201720340258 U CN201720340258 U CN 201720340258U CN 207265079 U CN207265079 U CN 207265079U
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Abstract
The utility model discloses a kind of deep ultraviolet LED epitaxial structure.It includes substrate, the Grown nucleating layer, grown buffer layer on nucleating layer, and growth has N-shaped AlGaN layer, periodic structure Al successively on the cushionaGa1‑aN/GaN current extendings, periodic structure AlbGa1‑bN/AlcGa1‑cN luminescent layers, periodic structure AlN/AldGa1‑dN barrier layers, periodic structure AleGa1‑ eN/GaN barrier layers and p-type GaN layer；The AleGa1‑eAl in N/GaN barrier layers 8eGa1‑eN layers are unintentional doped layer, and GaN layer is to mix Mg layers.The utility model uses periodic structure AleGa1‑eN/GaN barrier layers, AleGa1‑eN is unintentional doped layer, GaN layer is Mg doped layers, and using the memory effect of Mg and the tunnelling in hole, hole smoothly is introduced luminescent layer, both ensure that electronics can be limited in luminescent layer by barrier layer, it is ensured that the crystal quality on barrier layer, luminous efficiency higher.
Description
Technical field
The utility model belongs to technical field of semiconductor device, and in particular to a kind of deep ultraviolet LED epitaxial structure, especially relates to
And a kind of emission wavelength is in the ultraviolet LED of 265nm or so.
Background technology
Light wave category deep ultraviolet light between wavelength 100nm to 280nm, the deep ultraviolet light source of this wave band special lighting,
The fields such as sterilization, medical treatment, printing, biochemistry detection, the storage of highdensity information and secure communication are worth with major application.
The energy gap of GaN is 3.4eV, and the energy gap of AlN is 6.2eV, and GaN mixes the AlGaN materials of Al formation in theory
Material can be fabricated to ultraviolet LED of the emission wavelength in 200nm to 365nm.The best wave band of bactericidal effect is for 265nm or so, peak
Value wavelength is shorter than the LED of 270nm, and the Al component requirements in AlGaN are higher, compared with the high Al contents AlGaN material of high-crystal quality
The defects of larger and dislocation density are usually present, high quality P type AlGaN makes difficulty, these problems seriously constrain AlGaN
The development of deep ultraviolet LED.
Utility model content
The purpose of this utility model is exactly insufficient existing for above-mentioned background technology in order to solve, there is provided a kind of deep ultraviolet LED
Epitaxial structure.
The technical solution adopted in the utility model is：A kind of deep ultraviolet LED epitaxial structure, including transparent substrate, it is described
Grown nucleating layer, grown buffer layer on nucleating layer, growth has N-shaped AlGaN layer, periodically ties successively on the cushion
Structure AlaGa1-aN/GaN current extendings, periodic structure AlbGa1-bN/AlcGa1-cN luminescent layers, periodic structure AlN/
AldGa1-dN barrier layers, periodic structure AleGa1-eN/GaN barrier layers and p-type GaN layer；The AleGa1-eIn N/GaN barrier layers
AleGa1-eN layers are unintentional doped layer, and GaN layer is to mix Mg layers.
Further, for the AlGaN layer to mix Si layers, Si doping concentrations are 1*1018/cm3Magnitude, Al components are 0.2-
0.6, thickness 0.5um-4um.
Further, the AlaGa1-aThe first floor of N/GaN current extendings is barrier material AlaGa1-aN layers, be secondly trap material
Expect GaN layer, then repetition period barrier material AlaGa1-aN layers, trap material GaN layer, last layer are barrier material AlaGa1-aN layers；
AlaGa1-aN/GaN current extendings gross thickness is 30-500nm, every layer of barrier material AlaGa1-aN layers and the thickness of trap material GaN layer
It is 2-3nm.
Further, the AlbGa1-bN/AlcGa1-cThe first floor of N luminescent layers is barrier material AlcGa1-cN layers, be secondly trap
Materials A lbGa1-bN layers, then repetition period barrier material AlcGa1-cN layers, trap material AlbGa1-bN layers, last layer is barrier material
AlcGa1-cN layers；AlbGa1-bN/AlcGa1-cThe gross thickness of N luminescent layers is 20-200nm, every layer of barrier material AlcGa1-cN layers and trap
Materials A lbGa1-bN layers of thickness is 2-3nm.
Further, the AlN/AldGa1-dThe first floor on N barrier layers is AlN layers of barrier material, is secondly trap material AldGa1- dN layers, then repetition period barrier material AlN layers, trap material AldGa1-dN layers, last layer is AlN layers of barrier material or trap material
AldGa1-dN layers；AlN/AldGa1-dThe gross thickness on N barrier layers is 5-30nm, AlN layers of every layer of barrier material and trap material AldGa1-dN
The thickness of layer is 1-2nm.
AlN/AldGa1-dN barrier layers provide a high energy band primarily directed to electronics, prevent electronics tunnel PN from saving to be formed secretly
Electric current, while do not influence hole again and be injected into luminescent layer, so can be with height is wanted, thickness is moderate.
Further, the AleGa1-eThe first floor on N/GaN barrier layers is barrier material AleGa1-eN layers, be secondly trap material
GaN layer, then repetition period barrier material AleGa1-eN layers, trap material GaN layer, last layer are trap material GaN layer；AleGa1-eN/
The gross thickness on GaN barrier layers is 10-100nm, every layer of barrier material AleGa1-eThe thickness of N layers and trap material GaN layer is 1-2nm.
AleGa1-eN/GaN barrier layers, which play, prevents electronics tunnel, while improves the effect in hole；AlGaN layer is needed in height
Crystal quality just can grow preferably under temperature, low pressure, and Mg doping efficiencies just understand higher evenly under more High Voltage, lower temperature.
Further, the AleGa1-eThe Mg doping concentrations of GaN layer are 1*10 in N/GaN barrier layers (8)19/cm3Magnitude.
Further, 0.4≤a≤1,0≤b<c≤1、0<d<1、0.5<e≤1.
Further, the AlbGa1-bN/AlcGa1-cN luminescent layers, AleGa1-eN/GaN barrier layers and AlN/AldGa1- dThe energy gap on N barrier layers is sequentially increased.
The utility model realizes deep ultraviolet LED epitaxial structure of the peak luminous wavelength in 265nm and makes；Using periodically
Structure AleGa1-eN/GaN barrier layers, AleGa1-eN is low reaction chamber pressure, the unintentional doped layer of high growth temperature, and GaN layer is more
The Mg doped layers of high pressure, low-temperature epitaxy, using the memory effect of Mg and the tunnelling in hole, smoothly introduce luminescent layer by hole,
Both it ensure that electronics can be limited in luminescent layer by barrier layer, it is ensured that the crystal quality on barrier layer 8, luminous efficiency is more
It is high.
Brief description of the drawings
Fig. 1 is the structure diagram of the utility model.
Fig. 2 is using LED structure schematic diagram made of the utility model.
Fig. 3 is the schematic diagram using the luminous spectrum of LED made of the utility model.
Embodiment
The utility model is described in further detail with specific embodiment below in conjunction with the accompanying drawings, easy to be well understood
The utility model, but they do not form the utility model and limit.
As shown in Figure 1, the utility model epitaxial structure is grown on substrate material successively based on MOCVD, it is specially：
In transparent Grown nucleating layer 2, growth temperature is 950 DEG C, growth pressure 50mbar；Nucleating layer 2 is
GaN, AlN or AlGaN, thickness 10nm-50nm, the present embodiment thickness are 15nm.
Substrate can be sapphire, AlN, GaN etc..
Grown buffer layer 3 on nucleating layer, growth temperature are 1200 DEG C, growth pressure 100mbar；Cushion 3 is non-event
Meaning doping u-shaped AlGaN, Al component is 0.2-0.6, and thickness 1um-5um, the present embodiment Al components are 0.25, thickness 4um.
Growing n-type AlGaN layer 4 on cushion, growth temperature are 1250 DEG C, growth pressure 100mbar；AlGaN layer 4 is
Si layers are mixed, Si doping concentrations are 1*1018/cm3Magnitude, Al components are 0.2-0.6, thickness 0.5um-4um, the present embodiment Al groups
It is divided into 0.25, thickness 1um.
Growth periodicity structure Al in N-shaped AlGaN layer 4aGa1-aN/GaN current extendings 5,1400 DEG C of growth temperature are raw
Long pressure is 50mbar, 0.4≤a≤1, the present embodiment a=0.65；AlaGa1-aThe first floor of N/GaN current extendings 5 is base material
Expect AlaGa1-aN layers, be secondly trap material GaN layer, then repetition period barrier material AlaGa1-aN layers, trap material GaN layer, last
Layer is barrier material AlaGa1-aN layers；AlaGa1-a5 gross thickness of N/GaN current extendings is 30-500nm, and the present embodiment thickness is
100nm；Every layer of barrier material AlaGa1-aThe thickness of N layers and trap material GaN layer is 2-3nm, every layer of barrier material of the present embodiment
AlaGa1-aThe thickness of N layers and trap material GaN layer is respectively 2nm, 3nm.
Growth periodicity structure Al on current extending 5bGa1-bN/AlcGa1-cN luminescent layers 6,1400 DEG C of growth temperature are raw
Long pressure is 50mbar, 0≤b<C≤1, the present embodiment b=0.54, c=0.7；AlbGa1-bN/AlcGa1-cThe first floor of N luminescent layers 6
For barrier material AlcGa1-cN layers, be secondly trap material AlbGa1-bN layers, then repetition period barrier material AlcGa1-cN layers, trap material
AlbGa1-bN layers, last layer is barrier material AlcGa1-cN layers；AlbGa1-bN/AlcGa1-cThe gross thickness of N luminescent layers 6 is 20-
200nm, the present embodiment thickness are 120nm；Every layer of barrier material AlcGa1-cN layers and trap material AlbGa1-bN layers of thickness is 2-
3nm.Every layer of barrier material Al of the present embodimentcGa1-cN layers and trap material AlbGa1-bN layers of thickness is respectively 2nm, 2nm.
Growth periodicity structure AlN/Al is grown on luminescent layer 6dGa1-dN barrier layers 7,1400 DEG C of growth temperature, growth pressure
Power is 50mbar, 0<d<1, the present embodiment d=0.55；AlN/AldGa1-dThe first floor on N barrier layers 7 is AlN layers of barrier material, secondly
For trap material AldGa1-dN layers, then repetition period barrier material AlN layers, trap material AldGa1-dN layers, last layer is barrier material
AlN layers or trap material AldGa1-dN layers；AlN/AldGa1-dThe gross thickness on N barrier layers 7 is 5-30nm, and the present embodiment thickness is
15nm；AlN layers of every layer of barrier material and trap material AldGa1-dN layers of thickness is 1-2nm.AlN layers of barrier material of every layer of the present embodiment
With trap material AldGa1-dN layers of thickness is respectively 1nm, 2nm.
Growth periodicity structure Al on barrier layer 7eGa1-eN/GaN barrier layers 8, wherein AleGa1-eN is unintentional doped layer,
0.5<E≤1, the present embodiment e=0.7, growth pressure 10-50mbar, the present embodiment 30mbar, 40mbar or 50mbar,
Growth temperature is 1200-2000 DEG C, and the present embodiment is 1200 DEG C, 1500 DEG C or 1800 DEG C；GaN layer is to mix Mg layers, and Mg doping is dense
Degree reaches 1*1019/cm3Magnitude, growth pressure 200-400mbar, the present embodiment 200mbar, 250mbar or 300mbar, growth
Temperature is 500-950 DEG C, and the present embodiment is 700 DEG C, 800 DEG C or 950 DEG C.AleGa1-eThe first floor on N/GaN barrier layers 8 is base material
Expect AleGa1-eN layers, be secondly trap material GaN layer, then repetition period barrier material AleGa1-eN layers, trap material GaN layer, last
Layer is trap material GaN layer；AleGa1-eThe gross thickness on N/GaN barrier layers 8 is 10-100nm, and the present embodiment thickness is 30nm；Every layer
Barrier material AleGa1-eThe thickness of N layers and trap material GaN layer is 1-2nm.Every layer of barrier material Al of the present embodimenteGa1-eN layers and trap
The thickness of material GaN layer is respectively 1.5nm, 1.5nm.Above-mentioned AlbGa1-bN/AlcGa1-cN luminescent layers 6, AleGa1-eN/GaN stops
8 and AlN/Al of layerdGa1-dThe energy gap on N barrier layers 7 is sequentially increased.
P-type GaN layer 9 is grown on barrier layer 8, p-type GaN layer 9 is mixes Mg layers, thickness 3nm-30nm, the present embodiment thickness
For 10nm；Mg doping concentrations reach 1*1020/cm3Magnitude, growth pressure 200mbar, growth temperature are 850 DEG C.
The key of the making deep ultraviolet LED always of p-type AlGaN, this layer should play limitation electronics do not penetrate it is luminous
The effect of layer, plays the role of hole smoothly introducing luminescent layer, in order to realize peak luminous wavelength in the dark purple of 265nm again
Outer LED epitaxial wafer makes, it is desirable to which the Al components of p-type AlGaN are higher and Mg doping concentrations need to reach a certain concentration, and require brilliant
Weight is preferable.AlGaN layer needs the crystal quality under high temperature, low pressure just can grow preferably, under more High Voltage, lower temperature
Mg doping efficiencies just understand higher evenly.The utility model uses periodic structure AleGa1-eN/GaN barrier layers 8, AleGa1-eN
For low reaction chamber pressure, the unintentional doped layer of high growth temperature, GaN layer is higher pressure, the Mg doped layers of low-temperature epitaxy, is utilized
The memory effect of Mg and the tunnelling in hole, smoothly introduce luminescent layer by hole, both ensure that electronics can be limited in by barrier layer 8
In luminescent layer, it is ensured that the crystal quality on barrier layer 8, luminous efficiency higher.It is that epitaxial structure is carved by multiple shown in Fig. 2
The chip technologies such as erosion, deposition, the schematic diagram of manufactured deep ultraviolet LED, what is connected in p-type GaN layer in figure is p-type Ohmic contact electricity
Pole alloy 11, that connect in N-shaped AlGaN layer 4 is N-shaped Ohm contact electrode alloy 12, p-type Ohm contact electrode alloy 11 and n
12 both sides of type Ohm contact electrode alloy set SiO2Passivation layer 10.It is using made of the utility model structure shown in Fig. 3
The schematic diagram of the luminous spectrum of deep ultraviolet LED, as can be seen from the figure emission wavelength is 265nm or so.
The content not being described in detail in this specification belongs to the prior art known to professional and technical personnel in the field.
Claims (7)
- A kind of 1. deep ultraviolet LED epitaxial structure, it is characterised in that：Including transparent substrate (1), the Grown nucleating layer (2), grown buffer layer (3) on nucleating layer, growth has N-shaped AlGaN layer (4), periodic structure successively on the cushion AlaGa1-aN/GaN current extendings (5), periodic structure AlbGa1-bN/AlcGa1-cN luminescent layers (6), periodic structure AlN/ AldGa1-dN barrier layers (7), periodic structure AleGa1-eN/GaN barrier layers (8) and p-type GaN layer (9)；The AleGa1-eN/ Al in GaN barrier layers (8)eGa1-eN layers are unintentional doped layer, and GaN layer is to mix Mg layers.
- 2. deep ultraviolet LED epitaxial structure according to claim 1, it is characterised in that：The AlaGa1-aN/GaN current expansions The first floor of layer (5) is barrier material AlaGa1-aN layers, be secondly trap material GaN layer, then repetition period barrier material AlaGa1-aN layers, Trap material GaN layer, last layer are barrier material AlaGa1-aN layers；AlaGa1-aN/GaN current extendings (5) gross thickness is 30- 500nm, every layer of barrier material AlaGa1-aThe thickness of N layers and trap material GaN layer is 2-3nm.
- 3. deep ultraviolet LED epitaxial structure according to claim 1, it is characterised in that：The AlbGa1-bN/AlcGa1-cN is sent out The first floor of photosphere (6) is barrier material AlcGa1-cN layers, be secondly trap material AlbGa1-bN layers, then repetition period barrier material AlcGa1-cN layers, trap material AlbGa1-bN layers, last layer is barrier material AlcGa1-cN layers；AlbGa1-bN/AlcGa1-cN luminescent layers (6) gross thickness is 20-200nm, every layer of barrier material AlcGa1-cN layers and trap material AlbGa1-bN layers of thickness is 2-3nm.
- 4. deep ultraviolet LED epitaxial structure according to claim 1, it is characterised in that：The AlN/AldGa1-dN barrier layers (7) the first floor is AlN layers of barrier material, is secondly trap material AldGa1-dN layers, then repetition period barrier material AlN layers, trap material AldGa1-dN layers, last layer is AlN layers of barrier material or trap material AldGa1-dN layers；AlN/AldGa1-dThe total thickness on N barrier layers (7) Spend for 5-30nm, AlN layers of every layer of barrier material and trap material AldGa1-dN layers of thickness is 1-2nm.
- 5. deep ultraviolet LED epitaxial structure according to claim 1, it is characterised in that：The AleGa1-eN/GaN barrier layers (8) the first floor is barrier material AleGa1-eN layers, be secondly trap material GaN layer, then repetition period barrier material AleGa1-eN layers, trap Material GaN layer, last layer are trap material GaN layer；AleGa1-eThe gross thickness on N/GaN barrier layers (8) is 10-100nm, every layer Barrier material AleGa1-eThe thickness of N layers and trap material GaN layer is 1-2nm.
- 6. deep ultraviolet LED epitaxial structure according to claim 3, it is characterised in that：0.4≤a≤1,0≤b<c≤ 1、0<d<1、0.5<e≤1。
- 7. deep ultraviolet LED epitaxial structure according to claim 1, it is characterised in that：The AlbGa1-bN/AlcGa1-cN is sent out Photosphere (6), AleGa1-eN/GaN barrier layers (8) and AlN/AldGa1-dThe energy gap on N barrier layers (7) is sequentially increased.
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