CN106981548A - A kind of deep ultraviolet LED epitaxial structure and preparation method thereof - Google Patents
A kind of deep ultraviolet LED epitaxial structure and preparation method thereof Download PDFInfo
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- 230000004888 barrier function Effects 0.000 claims abstract description 98
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- 230000000737 periodic effect Effects 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 99
- 239000013078 crystal Substances 0.000 abstract description 6
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- 229910052594 sapphire Inorganic materials 0.000 description 1
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
The invention discloses a kind of deep ultraviolet LED epitaxial structure and preparation method thereof.It, which includes growing successively on grown buffer layer on substrate, the Grown nucleating layer, nucleating layer, the cushion, n-type AlGaN layer, periodic structure AlaGa1‑aN/GaN current extendings, periodic structure AlbGa1‑bN/AlcGa1‑cN luminescent layers, periodic structure AlN/AldGa1‑dN barrier layers, periodic structure AleGa1‑eN/GaN barrier layers and p-type GaN layer；The AleGa1‑ eAl in N/GaN barrier layers 8eGa1‑eN layers are unintentional doped layer, and GaN layer is to mix Mg layers.The present invention is using periodic structure AleGa1‑ eN/GaN barrier layers, AleGa1‑eN is unintentional doped layer, and GaN layer is Mg doped layers, using Mg memory effect and the tunnelling in hole, hole smoothly is introduced into luminescent layer, both ensure that electronics can be limited in luminescent layer by barrier layer, it is ensured that the crystal mass on barrier layer, and luminous efficiency is higher.
Description
Technical field
The invention belongs to technical field of semiconductor device, and in particular to a kind of deep ultraviolet LED epitaxial structure and its preparation side
Method, ultraviolet LED of more particularly to a kind of emission wavelength in 265nm or so.
Background technology
Light wave between wavelength 100nm to 280nm belongs to DUV, the deep ultraviolet light source of this wave band special lighting,
The fields such as sterilization, medical treatment, printing, biochemistry detection, the storage of highdensity information and secure communication have major application value.
GaN energy gap is 3.4eV, and AlN energy gap is 6.2eV, and GaN mixes the AlGaN materials of Al formation in theory
Material can be fabricated to ultraviolet LED of the emission wavelength in 200nm to 365nm.The best wave band of bactericidal effect is 265nm or so, peak
The Al component requirements that value wavelength is shorter than in 270nm LED, AlGaN are higher, compared with the high Al contents AlGaN material of high-crystal quality
Larger defect and dislocation density is usually present, high quality P type AlGaN makes difficult, and these problems seriously constrain AlGaN
Deep ultraviolet LED development.
The content of the invention
The purpose of the present invention is exactly that there is provided a kind of deep ultraviolet LED extensions in order to solve the deficiency of above-mentioned background technology presence
Structure and preparation method thereof.
The technical solution adopted by the present invention is：A kind of deep ultraviolet LED epitaxial structure, including transparent substrate, the substrate
Growth has n-type AlGaN layer, periodic structure successively on grown buffer layer on upper growth nucleating layer, nucleating layer, the cushion
AlaGa1-aN/GaN current extendings, periodic structure AlbGa1-bN/AlcGa1-cN luminescent layers, periodic structure AlN/AldGa1- dN barrier layers, periodic structure AleGa1-eN/GaN barrier layers and p-type GaN layer；The AleGa1-eIn N/GaN barrier layers
AleGa1-eN layers are unintentional doped layer, and GaN layer is to mix Mg layers.
Further, the AlGaN layer is mixes Si layers, and Si doping concentrations are 1*1018/cm3Magnitude, Al components are 0.2-
0.6, thickness is 0.5um-4um.
Further, the AlaGa1-aThe first floor of N/GaN current extendings is barrier material AlaGa1-aN layers, be secondly trap material
Expect GaN layer, then repetition period barrier material AlaGa1-aN layers, trap material GaN layer, last layer are barrier material AlaGa1-aN layers；
AlaGa1-aN/GaN current extendings gross thickness is 30-500nm, every layer of barrier material AlaGa1-aN layers and the thickness of trap material GaN layer
It is 2-3nm.
Further, the AlbGa1-bN/AlcGa1-cThe first floor of N luminescent layers is barrier material AlcGa1-cN layers, be secondly trap
Materials A lbGa1-bN layers, then repetition period barrier material AlcGa1-cN layers, trap material AlbGa1-bN layers, last layer is barrier material
AlcGa1-cN layers；AlbGa1-bN/AlcGa1-cThe gross thickness of N luminescent layers is 20-200nm, every layer of barrier material AlcGa1-cN layers and trap
Materials A lbGa1-bN layers of thickness is 2-3nm.
Further, the AlN/AldGa1-dThe first floor on N barrier layers is AlN layers of barrier material, is secondly trap material AldGa1- dN layers, then repetition period barrier material AlN layers, trap material AldGa1-dN layers, last layer is AlN layers of barrier material or trap material
AldGa1-dN layers；AlN/AldGa1-dThe gross thickness on N barrier layers is 5-30nm, AlN layer of every layer of barrier material and trap material AldGa1-dN
The thickness of layer is 1-2nm.
AlN/AldGa1-dN barrier layers provide a high energy band primarily directed to electronics, prevent electronics tunnel PN from saving to form dark
Electric current, while do not influence hole to be injected into luminescent layer again, so can be with height is wanted, thickness is moderate.
Further, the AleGa1-eThe first floor on N/GaN barrier layers is barrier material AleGa1-eN layers, be secondly trap material
GaN layer, then repetition period barrier material AleGa1-eN layers, trap material GaN layer, last layer are trap material GaN layer；AleGa1-eN/
The gross thickness on GaN barrier layers is 10-100nm, every layer of barrier material AleGa1-eThe thickness of N layers and trap material GaN layer is 1-2nm.
AleGa1-eN/GaN barrier layers, which are played, prevents electronics tunnel, while improving the effect in hole；AlGaN layer is needed in height
Temperature, crystal mass just can grow preferably under low pressure, under more High Voltage, lower temperature Mg doping efficiencies just can more it is high evenly.
Further, the AleGa1-eThe Mg doping concentrations of GaN layer are 1*10 in N/GaN barrier layers (8)19/cm3Magnitude.
Further, 0.4≤a≤1,0≤b<c≤1、0<d<1、0.5<e≤1.
Further, the AlbGa1-bN/AlcGa1-cN luminescent layers, AleGa1-eN/GaN barrier layers and AlN/AldGa1- dThe energy gap on N barrier layers increases successively.
A kind of preparation method of deep ultraviolet LED epitaxial structure, preparation process is：In transparent Grown nucleating layer,
Growing n-type AlGaN layer, periodic structure Al successively on the grown buffer layer on nucleating layer, the cushionaGa1-aN/GaN electricity
Flow extension layer, periodic structure AlbGa1-bN/AlcGa1-cN luminescent layers, periodic structure AlN/AldGa1-dN barrier layers, periodicity
Structure AleGa1-eN/GaN barrier layers and p-type GaN layer；The AleGa1-eAl in N/GaN barrier layers (8)eGa1-eN layers are unintentional
Doped layer, growth pressure is that 10-50mbar, growth temperature are 1200-2000 DEG C；AleGa1-eGaN layer in N/GaN barrier layers (8)
To mix Mg layers, Mg doping concentrations are 1*1019/cm3Magnitude, growth pressure is that 200-400mbar, growth temperature are 500-950 DEG C.
The present invention realizes peak luminous wavelength and made in 265nm deep ultraviolet LED epitaxial structure；Using periodic structure
AleGa1-eN/GaN barrier layers, AleGa1-eN is low reaction chamber pressure, the unintentional doped layer of high growth temperature, and GaN layer is more high pressure
The Mg doped layers of power, low-temperature epitaxy, using Mg memory effect and the tunnelling in hole, smoothly introduce luminescent layer by hole, both protected
Having demonstrate,proved barrier layer can be limited in electronics in luminescent layer, it is ensured that the crystal mass on barrier layer 8, and luminous efficiency is higher.
Brief description of the drawings
Fig. 1 is structural representation of the invention.
Fig. 2 is the LED structure schematic diagram being made of the present invention.
Fig. 3 is the schematic diagram of the luminous spectrum for the LED being made of the present invention.
Embodiment
The present invention is described in further detail with specific embodiment below in conjunction with the accompanying drawings, is easy to that this hair is well understood
It is bright, but they do not constitute restriction to the present invention.
As shown in figure 1, epitaxial structure of the present invention is grown on backing material successively based on MOCVD, it is specially：
In transparent Grown nucleating layer 2, growth temperature is 950 DEG C, and growth pressure is 50mbar；Nucleating layer 2 is
GaN, AlN or AlGaN, thickness are 10nm-50nm, and the present embodiment thickness is 15nm.
Substrate can be sapphire, AlN, GaN etc..
Grown buffer layer 3 on nucleating layer, growth temperature is 1200 DEG C, and growth pressure is 100mbar；Cushion 3 is non-event
Meaning doping u-shaped AlGaN, Al component is 0.2-0.6, and thickness is 1um-5um, and the present embodiment Al components are 0.25, and thickness is 4um.
Growing n-type AlGaN layer 4 on cushion, growth temperature is 1250 DEG C, and growth pressure is 100mbar；AlGaN layer 4 is
Si layers are mixed, Si doping concentrations are 1*1018/cm3Magnitude, Al components are 0.2-0.6, and thickness is 0.5um-4um, the present embodiment Al groups
It is divided into 0.25, thickness is 1um.
Growth periodicity structure Al in n-type AlGaN layer 4aGa1-aN/GaN current extendings 5,1400 DEG C of growth temperature is raw
Long pressure is 50mbar, 0.4≤a≤1, the present embodiment a=0.65；AlaGa1-aThe first floor of N/GaN current extendings 5 is base material
Expect AlaGa1-aN layers, be secondly trap material GaN layer, then repetition period barrier material AlaGa1-aN layers, trap material GaN layer, last
Layer is barrier material AlaGa1-aN layers；AlaGa1-aThe gross thickness of N/GaN current extendings 5 is 30-500nm, and the present embodiment thickness is
100nm；Every layer of barrier material AlaGa1-aThe thickness of N layers and trap material GaN layer is 2-3nm, every layer of barrier material of the present embodiment
AlaGa1-aThe thickness of N layers and trap material GaN layer is respectively 2nm, 3nm.
Growth periodicity structure Al on current extending 5bGa1-bN/AlcGa1-cN luminescent layers 6,1400 DEG C of growth temperature is raw
Long pressure is 50mbar, 0≤b<C≤1, the present embodiment b=0.54, c=0.7；AlbGa1-bN/AlcGa1-cThe first floor of N luminescent layers 6
For barrier material AlcGa1-cN layers, be secondly trap material AlbGa1-bN layers, then repetition period barrier material AlcGa1-cN layers, trap material
AlbGa1-bN layers, last layer is barrier material AlcGa1-cN layers；AlbGa1-bN/AlcGa1-cThe gross thickness of N luminescent layers 6 is 20-
200nm, the present embodiment thickness is 120nm；Every layer of barrier material AlcGa1-cN layers and trap material AlbGa1-bN layers of thickness is 2-
3nm.Every layer of barrier material Al of the present embodimentcGa1-cN layers and trap material AlbGa1-bN layers of thickness is respectively 2nm, 2nm.
Growth periodicity structure AlN/Al is grown on luminescent layer 6dGa1-dN barrier layers 7,1400 DEG C of growth temperature, growth pressure
Power is 50mbar, 0<d<1, the present embodiment d=0.55；AlN/AldGa1-dThe first floor on N barrier layers 7 is AlN layers of barrier material, secondly
For trap material AldGa1-dN layers, then repetition period barrier material AlN layers, trap material AldGa1-dN layers, last layer is barrier material
AlN layers or trap material AldGa1-dN layers；AlN/AldGa1-dThe gross thickness on N barrier layers 7 is 5-30nm, and the present embodiment thickness is
15nm；AlN layers of every layer of barrier material and trap material AldGa1-dN layers of thickness is 1-2nm.AlN layers of barrier material of every layer of the present embodiment
With trap material AldGa1-dN layers of thickness is respectively 1nm, 2nm.
Growth periodicity structure Al on barrier layer 7eGa1-eN/GaN barrier layers 8, wherein AleGa1-eN is unintentional doped layer,
0.5<E≤1, the present embodiment e=0.7, growth pressure is 10-50mbar, and the present embodiment is 30mbar, 40mbar or 50mbar,
Growth temperature is 1200-2000 DEG C, and the present embodiment is 1200 DEG C, 1500 DEG C or 1800 DEG C；GaN layer is to mix Mg layers, and Mg doping is dense
Degree reaches 1*1019/cm3Magnitude, growth pressure 200-400mbar, the present embodiment is 200mbar, 250mbar or 300mbar, growth
Temperature is 500-950 DEG C, and the present embodiment is 700 DEG C, 800 DEG C or 950 DEG C.AleGa1-eThe first floor on N/GaN barrier layers 8 is base material
Expect AleGa1-eN layers, be secondly trap material GaN layer, then repetition period barrier material AleGa1-eN layers, trap material GaN layer, last
Layer is trap material GaN layer；AleGa1-eThe gross thickness on N/GaN barrier layers 8 is 10-100nm, and the present embodiment thickness is 30nm；Every layer
Barrier material AleGa1-eThe thickness of N layers and trap material GaN layer is 1-2nm.Every layer of barrier material Al of the present embodimenteGa1-eN layers and trap
The thickness of material GaN layer is respectively 1.5nm, 1.5nm.Above-mentioned AlbGa1-bN/AlcGa1-cN luminescent layers 6, AleGa1-eN/GaN stops
8 and AlN/Al of layerdGa1-dThe energy gap on N barrier layers 7 increases successively.
P-type GaN layer 9 is grown on barrier layer 8, p-type GaN layer 9 is mixes Mg layers, and thickness is 3nm-30nm, the present embodiment thickness
For 10nm；Mg doping concentrations reach 1*1020/cm3Magnitude, growth pressure is 200mbar, and growth temperature is 850 DEG C.
P-type AlGaN making deep ultraviolet LED always key, this layer should play limitation electronics do not penetrate it is luminous
The effect of layer, plays a part of hole smoothly introducing luminescent layer, in order to realize peak luminous wavelength in the dark purple of 265nm again
Outer LED makes, it is desirable to which p-type AlGaN Al components are higher and Mg doping concentrations need to reach finite concentration, and require brilliant
Weight is preferable.AlGaN layer needs the crystal mass under high temperature, low pressure just can grow preferably, under more High Voltage, lower temperature
Mg doping efficiencies just can more it is high evenly.The present invention is using periodic structure AleGa1-eN/GaN barrier layers 8, AleGa1-eN is low
The unintentional doped layer of chamber pressure, high growth temperature, GaN layer is higher pressure, the Mg doped layers of low-temperature epitaxy, utilizes Mg's
Memory effect and the tunnelling in hole, smoothly introduce luminescent layer by hole, both ensure that electronics can be limited in by barrier layer 8 luminous
In layer, it is ensured that the crystal mass on barrier layer 8, luminous efficiency is higher.Be epitaxial structure shown in Fig. 2 by multiple etching,
What is connected in the chip technologies such as deposition, the schematic diagram for the deep ultraviolet LED being made, figure in p-type GaN layer is p-type Ohm contact electrode
What is connected in alloy 11, n-type AlGaN layer 4 is n-type Ohm contact electrode alloy 12, p-type Ohm contact electrode alloy 11 and n-type
The both sides of Ohm contact electrode alloy 12 set SiO2Passivation layer 10.It is the deep ultraviolet being made of structure of the present invention shown in Fig. 3
The schematic diagram of LED luminous spectrum, as can be seen from the figure emission wavelength is 265nm or so.
The content not being described in detail in this specification belongs to prior art known to professional and technical personnel in the field.
Claims (10)
1. a kind of deep ultraviolet LED epitaxial structure, it is characterised in that：Including transparent substrate (1), the Grown nucleating layer
(2) growth has n-type AlGaN layer (4), periodic structure successively on, grown buffer layer (3) on nucleating layer, the cushion
AlaGa1-aN/GaN current extendings (5), periodic structure AlbGa1-bN/AlcGa1-cN luminescent layers (6), periodic structure AlN/
AldGa1-dN barrier layers (7), periodic structure AleGa1-eN/GaN barrier layers (8) and p-type GaN layer (9)；The AleGa1-eN/
Al in GaN barrier layers (8)eGa1-eN layers are unintentional doped layer, and GaN layer is to mix Mg layers.
2. deep ultraviolet LED epitaxial structure according to claim 1, it is characterised in that：The AlGaN layer (4) is to mix Si layers,
Si doping concentrations are 1*1018/cm3Magnitude, Al components are 0.2-0.6, and thickness is 0.5um-4um.
3. deep ultraviolet LED epitaxial structure according to claim 1, it is characterised in that：The AlaGa1-aN/GaN current expansions
The first floor of layer (5) is barrier material AlaGa1-aN layers, be secondly trap material GaN layer, then repetition period barrier material AlaGa1-aN layers,
Trap material GaN layer, last layer is barrier material AlaGa1-aN layers；AlaGa1-aN/GaN current extendings (5) gross thickness is 30-
500nm, every layer of barrier material AlaGa1-aThe thickness of N layers and trap material GaN layer is 2-3nm.
4. deep ultraviolet LED epitaxial structure according to claim 1, it is characterised in that：The AlbGa1-bN/AlcGa1-cN is sent out
The first floor of photosphere (6) is barrier material AlcGa1-cN layers, be secondly trap material AlbGa1-bN layers, then repetition period barrier material
AlcGa1-cN layers, trap material AlbGa1-bN layers, last layer is barrier material AlcGa1-cN layers；AlbGa1-bN/AlcGa1-cN luminescent layers
(6) gross thickness is 20-200nm, every layer of barrier material AlcGa1-cN layers and trap material AlbGa1-bN layers of thickness is 2-3nm.
5. deep ultraviolet LED epitaxial structure according to claim 1, it is characterised in that：The AlN/AldGa1-dN barrier layers
(7) the first floor is AlN layers of barrier material, is secondly trap material AldGa1-dN layers, then repetition period barrier material AlN layers, trap material
AldGa1-dN layers, last layer is AlN layers of barrier material or trap material AldGa1-dN layers；AlN/AldGa1-dThe total thickness on N barrier layers (7)
Spend for 5-30nm, AlN layers of every layer of barrier material and trap material AldGa1-dN layers of thickness is 1-2nm.
6. deep ultraviolet LED epitaxial structure according to claim 1, it is characterised in that：The AleGa1-eN/GaN barrier layers
(8) the first floor is barrier material AleGa1-eN layers, be secondly trap material GaN layer, then repetition period barrier material AleGa1-eN layers, trap
Material GaN layer, last layer is trap material GaN layer；AleGa1-eThe gross thickness on N/GaN barrier layers (8) is 10-100nm, every layer
Barrier material AleGa1-eThe thickness of N layers and trap material GaN layer is 1-2nm.
7. deep ultraviolet LED epitaxial structure according to claim 1, it is characterised in that：The AleGa1-eN/GaN barrier layers
(8) the Mg doping concentrations of GaN layer are 1*10 in19/cm3Magnitude.
8. deep ultraviolet LED epitaxial structure according to claim 1, it is characterised in that：0.4≤a≤1,0≤b<c≤
1、0<d<1、0.5<e≤1。
9. deep ultraviolet LED epitaxial structure according to claim 1, it is characterised in that：The AlbGa1-bN/AlcGa1-cN is sent out
Photosphere (6), AleGa1-eN/GaN barrier layers (8) and AlN/AldGa1-dThe energy gap on N barrier layers (7) increases successively.
10. a kind of preparation method of deep ultraviolet LED epitaxial structure, it is characterised in that：Nucleating layer is grown on transparent substrate (1)
(2), growing n-type AlGaN layer (4), periodic structure successively on grown buffer layer (3), the cushion on nucleating layer (2)
AlaGa1-aN/GaN current extendings (5), periodic structure AlbGa1-bN/AlcGa1-cN luminescent layers (6), periodic structure AlN/
AldGa1-dN barrier layers (7), periodic structure AleGa1-eN/GaN barrier layers (8) and p-type GaN layer (9)；The AleGa1-eN/
Al in GaN barrier layers (8)eGa1-eN layers are unintentional doped layer, and growth pressure is that 10-50mbar, growth temperature are 1200-
2000℃；AleGa1-eGaN layer is mixes Mg layers in N/GaN barrier layers (8), and Mg doping concentrations are 1*1019/cm3Magnitude, growth pressure
Power is that 200-400mbar, growth temperature are 500-950 DEG C.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107492570A (en) * | 2017-08-09 | 2017-12-19 | 西安中为光电科技有限公司 | Recombination current extension layer and preparation method thereof |
| CN113140960A (en) * | 2021-03-31 | 2021-07-20 | 西安瑞芯光通信息科技有限公司 | Ultraviolet VCSEL chip based on compound semiconductor material and manufacturing method |
| CN114203327A (en) * | 2021-12-13 | 2022-03-18 | 中国核动力研究设计院 | P-i-n junction, preparation method, diode and beta nuclear battery |
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| CN113140960A (en) * | 2021-03-31 | 2021-07-20 | 西安瑞芯光通信息科技有限公司 | Ultraviolet VCSEL chip based on compound semiconductor material and manufacturing method |
| CN113140960B (en) * | 2021-03-31 | 2022-04-01 | 西安瑞芯光通信息科技有限公司 | Ultraviolet VCSEL chip based on compound semiconductor material and manufacturing method |
| CN114203327A (en) * | 2021-12-13 | 2022-03-18 | 中国核动力研究设计院 | P-i-n junction, preparation method, diode and beta nuclear battery |
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