CN207210577U - Polycrystalline graphite cover plate and polycrystalline furnace - Google Patents
Polycrystalline graphite cover plate and polycrystalline furnace Download PDFInfo
- Publication number
- CN207210577U CN207210577U CN201721141838.8U CN201721141838U CN207210577U CN 207210577 U CN207210577 U CN 207210577U CN 201721141838 U CN201721141838 U CN 201721141838U CN 207210577 U CN207210577 U CN 207210577U
- Authority
- CN
- China
- Prior art keywords
- cover plate
- polycrystalline
- graphite cover
- polycrystalline graphite
- air admission
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 229910002804 graphite Inorganic materials 0.000 title claims abstract description 35
- 239000010439 graphite Substances 0.000 title claims abstract description 35
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052786 argon Inorganic materials 0.000 claims abstract description 15
- 239000007789 gas Substances 0.000 claims abstract description 14
- 239000002210 silicon-based material Substances 0.000 claims description 11
- 238000002844 melting Methods 0.000 claims description 9
- 230000008018 melting Effects 0.000 claims description 9
- 239000011159 matrix material Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 12
- 229910052710 silicon Inorganic materials 0.000 abstract description 12
- 239000010703 silicon Substances 0.000 abstract description 12
- 239000012535 impurity Substances 0.000 abstract description 9
- 238000007599 discharging Methods 0.000 abstract description 4
- 230000009466 transformation Effects 0.000 abstract description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 238000010926 purge Methods 0.000 description 3
- 238000005266 casting Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Landscapes
- Silicon Compounds (AREA)
- Photovoltaic Devices (AREA)
Abstract
The utility model provides a kind of polycrystalline graphite cover plate, it includes setting gradually and corresponding is bonded and plate above being connected, sheet frame and lower panel, wherein, air admission hole is offered on the top panel, multiple ventholes are offered on the lower panel, so that argon gas can be blown into from the air admission hole and pass through the venthole blowout, simultaneously, the utility model also provides a kind of polycrystalline furnace, by using polycrystalline graphite cover plate of the present utility model effectively to improve impurity discharging passage in the polycrystalline furnace, maintain equilibrium temperature gradient and then improve the purpose of silicon chip photoelectric transformation efficiency.
Description
Technical field
Crystal silicon solar batteries technical field is the utility model is related to, more particularly to polycrystalline graphite cover plate and polycrystalline furnace.
Background technology
Photovoltaic generation is one of currently the most important clean energy resource, has great development potentiality.Due to casting polysilicon
Preparation technology it is relatively easy, cost is far below monocrystalline silicon, and polysilicon progressively substitutes pulling of silicon single crystal in solar cell material
The leading position in market, turn into most important photovoltaic material in industry.
With expiring for 630 photovoltaic subsidy policys, competitive pressure is increasing, as silicon chip enterprise, lifts silicon chip photoelectricity
Conversion efficiency is the most important thing.And the impurity being inherently present in silicon material can not effectively exclude that silicon chip opto-electronic conversion effect will be directly affected
Rate.The cover plate used at present in industry is all sealing, is unfavorable for the circulation of argon stream, the utility model is intended to pass through adjustment
Crucible cover plate improves impurity discharging passage, maintains equilibrium temperature gradient and then improves the purpose of silicon chip photoelectric transformation efficiency.
Utility model content
To solve problems of the prior art, spy provides the utility model a kind of polycrystalline graphite cover plate.
The utility model adopts the following technical scheme that, a kind of polycrystalline graphite cover plate, it is characterised in that the polycrystalline graphite lid
Plate include setting gradually and it is corresponding be bonded and plate, sheet frame and lower panel above being connected, wherein, opened up on the top panel
There is air admission hole, multiple ventholes are offered on the lower panel, so that argon gas can be blown into from the air admission hole and pass through described
Venthole is blown out.
Preferably, the top panel and the lower panel are square, and the sheet frame is square-shaped frame.
Preferably, the air admission hole is located at the center of the top panel, and the lower panel is corresponded to beyond the air admission hole
Region sets the venthole, and the region that the venthole is corresponded in the sheet frame is set.
Preferably, the lower panel is divided into four regions arranged in matrix pattern, institute by the line of centres on its four sides
Venthole is stated to arrange with array way in four regions.
Preferably, a diameter of 100mm~150mm of the air admission hole.
Preferably, a diameter of 130mm of the air admission hole.
Preferably, a diameter of 15mm~25mm of the venthole.
Preferably, the thickness of the top panel, the sheet frame and the lower panel is 5mm~10mm.
Preferably, the top panel, the sheet frame and the lower panel are fixedly connected by wearing the graphite bolt of three.
In addition, the utility model also provides a kind of polycrystalline furnace, including for melting the crucible of silicon material, located at the crucible side
The backplate in face and the bottom plate under the crucible, wherein, the polycrystalline furnace also includes foregoing polycrystalline graphite cover plate, described more
Spar inky cap plate is located at edge on the backplate
The beneficial effects of the utility model are：By being had in polycrystalline furnace using polycrystalline graphite cover plate of the present utility model
Effect ground improves impurity discharging passage, maintains equilibrium temperature gradient and then improves silicon chip photoelectric transformation efficiency.
Brief description of the drawings
Fig. 1 is the structural representation of plate above the embodiment of utility model；
Fig. 2 is the structural representation of the sheet frame of the embodiment of utility model；
Fig. 3 is the structural representation of plate below the embodiment of utility model；
Fig. 4 is the structural representation of the polycrystalline furnace of the embodiment of utility model.
Description of reference numerals
The air admission hole of 1 top panel, 2 sheet frame, 3 lower panel 4
The crucible 8 of 6 venthole 7 melts the polycrystalline graphite cover plate of silicon material 9
The bottom plate of 10 backplate 11
Embodiment
Below, specific embodiment of the utility model is described in detail with reference to accompanying drawing, but it is new not as this practicality
The restriction of type.The utility model embodiment is described in detail with reference to accompanying drawing,
It should be understood that disclosed embodiments can be made with various modifications.Therefore, description above should not regard
To limit, and only as the example of embodiment.Those skilled in the art will expect within the scope and spirit of this
Other modifications.
Comprising in the description and the accompanying drawing of a part for constitution instruction shows embodiment of the disclosure, and with it is upper
What face provided is used to explain the disclosure together to the substantially description of the disclosure and the detailed description given below to embodiment
Principle.
It will be appreciated that though the utility model is described with reference to instantiation, but those skilled in the art
Realize many other equivalents of the present utility model with can determine, they have feature as claimed in claim and therefore
It is all located in the protection domain that is limited whereby.
The utility model is described in detail with reference to the accompanying drawings.
Fig. 1, Fig. 2 and Fig. 3 are respectively that the structure of plate 1, sheet frame 2 and lower panel 3 above embodiment of the present utility model is shown
It is intended to, describes the architectural feature of polycrystalline graphite cover plate 9 of the present utility model in detail with reference to three accompanying drawings, polycrystalline graphite cover plate 9 wraps
Include set gradually it is corresponding be bonded and plate 1, sheet frame 2 and lower panel 3 above being connected, wherein, offer air inlet on top panel 1
Hole 4, multiple ventholes 6 are offered on lower panel 3, so that argon gas can be blown into from air admission hole 4 and be blown out by venthole 6, lead to
Cross effectively improves impurity discharging passage using the polycrystalline graphite cover plate 9 of the present embodiment, efficiently maintains equilibrium temperature gradient and then reaches
To silicon chip photoelectric transformation efficiency is improved, in this embodiment, top panel 1 and the shape of lower panel 3 and sheet frame 2 specifically can be according to more
The structure of crucible 7 (referring to Fig. 4) in brilliant stove does corresponding adjustment, for example, it may be circular, rectangle or square, herein
It is not specifically limited.
In the present embodiment, top panel 1 and lower panel 3 are square, and sheet frame 2 is square-shaped frame, and sheet frame 2 is in
Between top panel 1 and lower panel 3, corresponding fitting successively, and the graphite bolt (not shown) by wearing three is realized
It is fixedly connected so that three turns into closely one, more firm；In the present embodiment, the thickness of three be 5mm~
10mm, preferably 5mm, here, specific thickness does not do further restriction, appropriate adjustment is carried out according to the size of crucible 7.
Referring to Fig. 1, plate 1 above polycrystalline graphite cover plate 9 is shown in figure, it is provided with air admission hole 4 above, and air admission hole 4 is located at
The center of top panel 1, a diameter of 100mm~150mm of the air admission hole 4 in the present embodiment, it is preferable that air admission hole 4 it is a diameter of
130mm, it is not particularly limited for the diameter of air admission hole 4, can be done according to the structure size of crucible 7 and correspondingly adjusted.
The part surface of the melting silicon material 8 in crucible 7 is only purged in order to avoid argon gas, in actual silicon ingot casting process,
The whole surface of uniformly purging melting silicon material 8 is needed, impurity can be so removed to greatest extent, with reference to Fig. 2 and Fig. 3, upper
The sheet frame 2 and lower panel 3 attached successively is provided with below panel 1, sheet frame 2 is shown in Fig. 2, sheet frame 2 has and the phase of top panel 1
Same thickness, in addition it should be noted that the frame that the venthole 6 on lower panel 3 is all located at lower panel 3 and sheet frame 2 encloses
Into in the corresponding region in region, lower panel 3 is avoided venthole 6 is sealed by the frame due to being bonded with the frame of sheet frame 2
Gear, thus prevent argon gas can not be from the part venthole 6 being blocked by simultaneously as lower panel 3 corresponds to air admission hole 4
Position is not provided with venthole 6, therefore after argon gas is blown into, and argon gas directly can not enter crucible 7 by venthole 6, but
By lower panel 3 and the sky that after the stop of 4 corresponding position of air admission hole, is surrounded in top panel 1, lower panel 3 and sheet frame 2 rapidly
Between spread, then, argon gas is by multiple ventholes 6 of lower panel 3 evenly into by polycrystalline graphite cover plate 9 and melting silicon material 8
Surface formed space, and equably purging melting silicon material 8 surface.
Two two perpendicularly crossed each other dotted lines are shown below Fig. 3 on plate 3 and are formed using crosspoint as the center of circle
Circle and the venthole 6 arranged with array way, wherein, two dotted lines and the round reality are simultaneously not present, in this implementation
In example, two dotted lines are the line of centres that lower panel 3 is formed by its four sides midpoint, and the line of centres is by lower panel
3 be divided into matrix pattern arrange four regions, meanwhile, on lower panel 3 with the correspondence position institute of the air admission hole 4 of top panel 1
State round mark, it can be seen that argon gas is blown into from air admission hole 4 can not be directly entered crucible 7, but blow in the area of the circle mark
Domain is simultaneously blocked；By Fig. 3 it can also be seen that venthole 6 is evenly distributed on the institute outside the region of the circle mark of lower panel 3
State in four regions, and arranged with array way；In the present embodiment, a diameter of 15mm~25mm of venthole 6, preferably
For 20mm.
Fig. 4 shows the structural representation of polycrystalline furnace, and the polycrystalline furnace of the present embodiment includes being used for the crucible for containing melting silicon material 8
7th, for isolating the backplate 10 of crucible 7 and the bottom plate 11 under crucible 7, polycrystalline furnace also includes above-mentioned polycrystalline graphite cover plate 9,
The lid of polycrystalline graphite cover plate 9 is located at edge on backplate 10, thus, effectively isolates crucible 7 with free surrounding space, was cast in silicon ingot
Journey, to remove the impurity in the polycrystalline furnace, and argon gas is used, air admission hole 4 of the argon gas from plate 1 above polycrystalline graphite cover plate 9
It is blown into, the direction of arrow of the top is blown downwards from figure, and argon gas shunts to be full of rapidly to be enclosed by top panel 1, sheet frame 2 and lower panel 3
Into whole space, then, be blown into by the venthole 6 of lower panel 3 by the melting silicon material 8 in polycrystalline graphite cover plate 9 and crucible 7
The surface in the space surrounded, equably purging melting silicon material 8, while the impurity in space is equably purged, impurity passes through with argon gas
Flowed out by venthole 6 from air admission hole 4, final polycrystalline furnace can cast out pure silicon ingot.
Above example is only exemplary embodiment of the present utility model, is not used in limitation the utility model, and this practicality is new
The protection domain of type is defined by the claims.Those skilled in the art can be in essence of the present utility model and protection domain
It is interior, various modifications or equivalent substitution are made to the utility model, this modification or equivalent substitution also should be regarded as new in this practicality
In the protection domain of type.
Claims (10)
1. a kind of polycrystalline graphite cover plate, it is characterised in that the polycrystalline graphite cover plate includes setting gradually corresponding fitting and phase
Plate, sheet frame and lower panel above connection, wherein, air admission hole is offered on the top panel, is offered on the lower panel more
Individual venthole, so that argon gas can be blown into from the air admission hole and pass through the venthole blowout.
2. polycrystalline graphite cover plate according to claim 1, it is characterised in that the top panel and the lower panel are just
Square panel, the sheet frame are square-shaped frame.
3. polycrystalline graphite cover plate according to claim 2, it is characterised in that the air admission hole is located in the top panel
The heart, the region that the lower panel corresponds to beyond the air admission hole sets the venthole, and the venthole corresponds to the sheet frame
Interior region is set.
4. polycrystalline graphite cover plate according to claim 3, it is characterised in that the lower panel is connected by the center on its four sides
Line is divided into four regions arranged in matrix pattern, and the venthole is arranged in four regions with array way.
5. polycrystalline graphite cover plate according to claim 1, it is characterised in that a diameter of 100mm of the air admission hole~
150mm。
6. polycrystalline graphite cover plate according to claim 5, it is characterised in that a diameter of 130mm of the air admission hole.
7. polycrystalline graphite cover plate according to claim 1, it is characterised in that a diameter of 15mm of the venthole~
25mm。
8. polycrystalline graphite cover plate according to claim 1, it is characterised in that the top panel, the sheet frame and it is described under
The thickness of panel is 5mm~10mm.
9. polycrystalline graphite cover plate according to claim 1, it is characterised in that the top panel, the sheet frame and it is described under
Panel is fixedly connected by wearing the graphite bolt of three.
10. a kind of polycrystalline furnace, including for containing the crucible for melting silicon material, the backplate located at the crucible side and located at described
Bottom plate under crucible, it is characterised in that the polycrystalline furnace also includes the polycrystalline graphite lid according to claim any one of 1-9
Plate, the polycrystalline graphite cover plate are located at edge on the backplate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721141838.8U CN207210577U (en) | 2017-09-06 | 2017-09-06 | Polycrystalline graphite cover plate and polycrystalline furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721141838.8U CN207210577U (en) | 2017-09-06 | 2017-09-06 | Polycrystalline graphite cover plate and polycrystalline furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207210577U true CN207210577U (en) | 2018-04-10 |
Family
ID=61823558
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721141838.8U Expired - Fee Related CN207210577U (en) | 2017-09-06 | 2017-09-06 | Polycrystalline graphite cover plate and polycrystalline furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207210577U (en) |
-
2017
- 2017-09-06 CN CN201721141838.8U patent/CN207210577U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180410 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |