CN207109141U - A kind of ingot furnace for improving the average conversion efficiency of silicon ingot - Google Patents
A kind of ingot furnace for improving the average conversion efficiency of silicon ingot Download PDFInfo
- Publication number
- CN207109141U CN207109141U CN201720906434.7U CN201720906434U CN207109141U CN 207109141 U CN207109141 U CN 207109141U CN 201720906434 U CN201720906434 U CN 201720906434U CN 207109141 U CN207109141 U CN 207109141U
- Authority
- CN
- China
- Prior art keywords
- crucible
- layer
- ingot
- conversion efficiency
- graphite
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Silicon Compounds (AREA)
Abstract
The utility model discloses a kind of ingot furnace for improving the average conversion efficiency of silicon ingot, including body of heater and the crucible for being arranged on furnace interior, the bottom of furnace interior is provided with graphite column, the top horizontal of graphite column is provided with heat exchange platform, crucible is placed on heat exchange platform, graphite protective plate layer is disposed between the inside wall of the periphery of crucible to body of heater, heater layer and insulation cap layer, the cross sectional shape of crucible is octagon, octagon crucible includes four sidewall of crucible and four crucible chamfering walls, crucible chamfering wall is between two neighboring sidewall of crucible, the cross sectional shape of graphite protective plate layer and heater layer is consistent with the cross sectional shape of crucible, and graphite protective plate layer and heater layer are respectively formed with the chamfering aspect being correspondingly arranged with crucible chamfering wall；Existing quadrangle thermal field by the chamfered to four angles, is increased thermal field size, upgrades to octagonal thermal field, can avoid the generation of angle ingot, lift the average conversion efficiency of whole ingot of silicon ingot by the utility model.
Description
Technical field
A kind of ingot furnace is the utility model is related to, more particularly to a kind of ingot furnace for improving the average conversion efficiency of silicon ingot, category
In solar energy polycrystalline silicon ingot casting thermal field technical field.
Background technology
In existing ingot furnace thermal field, thermal field interior crucible is designed to square, as shown in figure 1, this structure causes
The finished product silicon ingot produced equally is square, because the two neighboring face of angle ingot of four Angle Positions of silicon ingot is all close to crucible,
Influenceed by from crucible impurity, heated field border effects it is big, easily produce heated field border effects it is big,
The angle ingot of low conversion efficiency, and corner temperature of thermal field skewness, cause conversion efficiency than relatively low, influence silicon ingot efficiency from
Property is dissipated, so as to have influence on the average conversion efficiency of whole silicon ingot；Because initial ingot furnace thermal field is designed as quadrangle, cause to produce
Silicon ingot angle ingot necessarily occurs, the conversion efficiency of angle ingot is relatively low, causes the average conversion efficiency of whole ingot there was only 18.6% or so,
Therefore, it is necessary to carry out innovative design again to ingot furnace thermal field structure.
The content of the invention
To solve the deficiencies in the prior art, the utility model provides a kind of ingot furnace for improving the average conversion efficiency of silicon ingot,
By the chamfered to existing four angles of quadrangle thermal field, increase thermal field size, upgrade to octagonal thermal field, can keep away
Exempt from the generation of angle ingot, improve the average conversion efficiency of silicon ingot, at the same it is more efficient using furnace chamber space, and increase thermal field inside is effectively
Area, improve charge, by the improvement to thermal field structure, the utility model ingot furnace make silicon ingot be averaged conversion efficiency by
18.6% or so is promoted to 18.8% or so.
Technical scheme is used by the utility model：
A kind of ingot furnace for improving the average conversion efficiency of silicon ingot, including body of heater and the crucible for being arranged on furnace interior, it is described
The bottom of furnace interior is vertically installed with graphite column, and the top horizontal of the graphite column is provided with heat exchange platform, institute
State crucible to be placed on heat exchange platform, heat exchange platform primarily serves the effect of heat transfer, in the periphery of the crucible to stove
Graphite protective plate layer, heater layer and insulation cap layer, the cross sectional shape of the crucible are disposed between the inside wall of body is
Octagon, the octagon crucible include four sidewall of crucible and four crucible chamfering walls, and the crucible chamfering wall is located at adjacent two
Between individual sidewall of crucible, the graphite protective plate layer and the cross sectional shape of heater layer and the cross sectional shape of crucible are consistent, and the stone
Black backplate layer and heater layer are respectively formed with the chamfering aspect being correspondingly arranged with crucible chamfering wall.
As it is of the present utility model further preferably, be provided with above the crucible of the furnace interior top stay-warm case
Layer, bottom insulation cap layer, the top insulation cap layer and bottom insulation are arranged with the graphite column below heat exchange platform
The cross sectional shape of cap layer is consistent with the cross sectional shape of crucible, improves heat insulation effect, prevents heat to scatter and disappear.
Eight spout holes further preferably are provided with described bottom insulation cap layer as of the present utility model, it is described
Eight spout holes are correspondingly arranged with four sidewall of crucible of crucible and four crucible chamfering walls respectively, ensure that silicon liquid smoothly flows during overflow
To the bottom overflow silk position of furnace interior.
As it is of the present utility model further preferably, described graphite column is provided with three, three graphite columns
The bottom that a triangle is vertically set on furnace interior is surrounded, graphite column is used for branch bottom of furnace body placement triangular in shape
Support the support column of heat exchange platform and crucible, silicon ingot etc..
Further preferably the periphery of described graphite column is cased with asbestos protective layer as of the present utility model, and asbestos are protected
Sheath is usually to be set by the erosion of silicon liquid when being used for protecting the graphite column by overflow not occurred that high temperature resistant asbestos make
One layer of protective case.
Further preferably the bottom of the furnace interior is provided with overflow cotton layer as of the present utility model, and described overflows
Stream cotton layer is provided with five layers, and overflow cotton is typically to block overflow silicon liquid to be in contact with body of heater by being used for of making of high temperature resistant asbestos
Protective layer.
Further preferably be provided with overflow silk on described overflow cotton layer as of the present utility model, overflow silk be by
What stainless steel wire made, for detecting whether that the protection instrument of overflow occurs, overflow silk is fabricated to one generally according to crucible shape
Individual outer ring, an inner ring is fabricated to according still further to square, and is fixed on overflow layer surface, then access protection circuit, once hair
Raw overflow, silicon liquid, which is flowed on overflow silk, blows overflow silk, and protection circuit will send alarm and cut off the electricity supply, and overflow silk is ability
The conventional overflow monitoring device in domain, concrete principle will not be repeated here with structure.
Width as of the present utility model further preferred, described crucible chamfering wall is less than the one of sidewall of crucible width
Half, integrally-built uniformity is good, enhancing structure intensity.
As it is of the present utility model further preferably, described graphite protective plate layer is to be combined as eight using eight pieces of graphite protective plates
The graphite protective plate layer of side shape, to the shape for the crucible that coincide, support is played a part of to crucible in ingot casting, with quadrangle thermal field phase
Than intensity does not decline.
As it is of the present utility model further preferably, be provided with eight pieces of described graphite protective plates in every piece of graphite protective plate
Spout hole, it is easy to exclude overflow silicon liquid in time.
The beneficial effects of the utility model are：Pass through the chamfered to existing four angles of quadrangle thermal field, increase
Thermal field size, upgrade to octagonal thermal field, effectively avoid producing that heated field border effects are big, low conversion efficiency
Angle ingot, the average conversion efficiency of silicon ingot is improved, improve the discreteness of silicon ingot efficiency, at the same it is more efficient using furnace chamber space, increase
Effective area inside big thermal field, improves charge, by the improvement to thermal field structure, uses the octagon ingot casting of innovative design
After stove thermal field, the average conversion efficiency of silicon ingot can be promoted to 18.8% or so from original 18.6% or so, therefore, further improve
Ingot furnace using competitiveness and polysilicon chip photovoltaic generation industry holistic cost advantage.
Brief description of the drawings：
Fig. 1 is existing ingot furnace structural representation；
Fig. 2 is the utility model ingot furnace structural representation one；
Fig. 3 is the utility model ingot furnace structural representation two；
Fig. 4 is the utility model ingot furnace thermal field top structure schematic diagram；
Fig. 5 is the utility model ingot furnace polycrystalline substance schematic diagram；
Main Reference Numerals implication is as follows in figure：
1- bodies of heater, 2- insulation cap layer, 3- heater layers, 4- graphite protective plate layers, 5- crucibles, 6- silicon ingots, 7- angles ingot, 8- crucibles
Wall, 9- crucible chamfering walls, 10- tops insulation cap layer, 11- bottoms insulation cap layer, 12- heat exchange platforms, 13- overflow cotton layers, 14-
Graphite column, 15- asbestos protective layers, 16- overflow silks.
Embodiment：
Specific introduction is done to the utility model with reference to the accompanying drawings and examples.
As shown in Figure 2-5：The present embodiment is a kind of ingot furnace for improving the average conversion efficiency of silicon ingot, including body of heater 1 and is set
Put the crucible 5 inside body of heater 1, the crucible 5 in the present embodiment is quartz material, and silicon ingot 6 is located in crucible 5, inside body of heater 1
Bottom be vertically installed with graphite column 14, the top horizontal of graphite column 14 is provided with heat exchange platform 12, crucible 5 is placed
On heat exchange platform 12, heat exchange platform 12 primarily serves the effect of heat transfer, in the periphery of crucible 5 to the inside of body of heater 1
It is disposed with graphite protective plate layer 4, heater layer 3 and insulation cap layer 2 between wall, the cross sectional shape of crucible 5 is octagon, eight
Side shape crucible 5 includes four sidewall of crucible 8 and four crucible chamfering walls 9, crucible chamfering wall 9 between two neighboring sidewall of crucible 8,
The cross sectional shape of graphite protective plate layer 4 and heater layer 3 is consistent with the cross sectional shape of crucible 5, and graphite protective plate layer 4 and heater layer
3 are respectively formed with the chamfering aspect being correspondingly arranged with crucible chamfering wall 9.
The present embodiment is provided with top insulation cap layer 10 above the crucible 5 inside body of heater 1, below heat exchange platform 12
Graphite column 14 on be arranged with bottom insulation cap layer 11, top insulation cap layer 10 and bottom insulation cap layer 11 cross sectional shape with
The cross sectional shape of crucible 5 is consistent, improves heat insulation effect, prevents heat to scatter and disappear；Moreover, the present embodiment is in bottom insulation cap layer 11
Eight spout holes are provided with, eight spout holes are correspondingly arranged with four sidewall of crucible 8 of crucible 5 and four crucible chamfering walls 9 respectively,
Ensure the bottom overflow silk position that silicon liquid is smoothly flowed to inside body of heater 1 during overflow.
Graphite column 14 in the present embodiment is provided with three, and three graphite columns 14 surround a triangle and are vertically arranged
Bottom inside body of heater 1, graphite column 14 the placement triangular in shape of the bottom of body of heater 1 be used for support heat exchange platform 12 and earthenware
The support column of crucible 5, silicon ingot 6 etc..
The present embodiment is cased with asbestos protective layer 15 in the periphery of graphite column 14, and asbestos protective layer 15 is usually by high temperature resistant
The erosion of silicon liquid when being used for protecting the graphite column 14 by overflow not occurred that asbestos make and the one layer of protective case set.
Bottom of the present embodiment inside body of heater 1 is provided with overflow cotton layer 13, and overflow cotton layer 13 is provided with five layers, overflow
Cotton is typically the protective layer for being used for blocking overflow silicon liquid to be in contact with body of heater made by high temperature resistant asbestos；Meanwhile this implementation
Example is provided with overflow silk 16 on overflow cotton layer 13, and overflow silk 16 is made by stainless steel wire, for detecting whether to occur to overflow
The protection instrument of stream, overflow silk 16 are fabricated to an outer ring generally according to crucible shape, are fabricated to according still further to square in one
Circle, and overflow layer surface is fixed on, protection circuit is then accessed, once overflow occurs, silicon liquid, which is flowed on overflow silk, blows overflow
Silk, protection circuit will send alarm and cut off the electricity supply, and overflow silk is overflow monitoring device commonly used in the art, concrete principle with
Structure will not be repeated here.
The width of crucible chamfering wall 9 in the present embodiment is less than the half of the width of sidewall of crucible 8, integrally-built uniformity
It is good, enhancing structure intensity；Moreover, the graphite protective plate layer 4 in the present embodiment be combined as using eight pieces of graphite protective plates it is octagonal
Graphite protective plate layer 4, to the shape for the crucible 5 that coincide, support is played a part of to crucible 5 in ingot casting, compared with quadrangle thermal field,
Intensity does not decline；Meanwhile be provided with spout hole in every piece of graphite protective plate in eight pieces of graphite protective plates in the present embodiment, be easy to and
When exclude overflow silicon liquid.
The utility model is increased thermal field size, upgraded to by the chamfered to existing four angles of quadrangle thermal field
Octagonal thermal field, effectively avoids producing that heated field border effects are big, angle ingot of low conversion efficiency, improves silicon ingot
Average conversion efficiency, improve the discreteness of silicon ingot efficiency, at the same it is more efficient using furnace chamber space, increase significant surface inside thermal field
Product, charge is improved, by the improvement to thermal field structure, after the octagon ingot furnace thermal field of innovative design, silicon ingot is put down
Equal conversion efficiency can be promoted to 18.8% or so from original 18.6% or so, and therefore, the use for further improving ingot furnace is competing
Strive the holistic cost advantage of power and polysilicon chip in photovoltaic generation industry.
Described above is only the preferred embodiment of the utility model patent, it is noted that for the general of the art
For logical technical staff, on the premise of the utility model patent principle is not departed from, some improvements and modifications can also be made, this
A little improvements and modifications also should be regarded as the protection domain of the utility model patent.
Claims (10)
- A kind of 1. ingot furnace for improving the average conversion efficiency of silicon ingot, it is characterised in that：Including body of heater and it is arranged on furnace interior Crucible, the bottom of the furnace interior are vertically installed with graphite column, and the top horizontal of the graphite column is provided with hot friendship Platform is changed, the crucible is placed on heat exchange platform, is set successively between the inside wall of the periphery of the crucible to body of heater Graphite protective plate layer, heater layer and insulation cap layer are equipped with, the cross sectional shape of the crucible is octagon, the octagon crucible bag Four sidewall of crucible and four crucible chamfering walls are included, the crucible chamfering wall is between two neighboring sidewall of crucible, the graphite shield The cross sectional shape of flaggy and heater layer is consistent with the cross sectional shape of crucible, and the graphite protective plate layer and heater layer difference shape The chamfering aspect that Cheng Youyu crucible chamfering walls are correspondingly arranged.
- 2. a kind of ingot furnace for improving the average conversion efficiency of silicon ingot according to claim 1, it is characterised in that in the stove Insulation cap layer in top is provided with above the crucible in internal portion, bottom insulation is arranged with the graphite column below heat exchange platform The cross sectional shape of cap layer, the top insulation cap layer and bottom insulation cap layer is consistent with the cross sectional shape of crucible.
- A kind of 3. ingot furnace for improving the average conversion efficiency of silicon ingot according to claim 2, it is characterised in that described bottom Eight spout holes are provided with portion's insulation cap layer, eight spout holes fall with four sidewall of crucible of crucible and four crucibles respectively Angle wall is correspondingly arranged.
- 4. a kind of ingot furnace for improving the average conversion efficiency of silicon ingot according to claim 1 or 2, it is characterised in that described Graphite column be provided with three, three graphite columns surround the bottom that a triangle is vertically set on furnace interior.
- A kind of 5. ingot furnace for improving the average conversion efficiency of silicon ingot according to claim 4, it is characterised in that described stone The periphery of black column is cased with asbestos protective layer.
- A kind of 6. ingot furnace for improving the average conversion efficiency of silicon ingot according to claim 1, it is characterised in that the body of heater Internal bottom is provided with overflow cotton layer, and the overflow cotton layer is provided with five layers.
- 7. a kind of ingot furnace for improving the average conversion efficiency of silicon ingot according to claim 6, it is characterised in that described Overflow silk is provided with overflow cotton layer.
- A kind of 8. ingot furnace for improving the average conversion efficiency of silicon ingot according to claim 1, it is characterised in that described earthenware The width of crucible chamfering wall is less than the half of sidewall of crucible width.
- A kind of 9. ingot furnace for improving the average conversion efficiency of silicon ingot according to claim 1, it is characterised in that described stone Black backplate layer is to be combined as octagonal graphite protective plate layer using eight pieces of graphite protective plates.
- 10. a kind of ingot furnace for improving the average conversion efficiency of silicon ingot according to claim 9, it is characterised in that described In eight pieces of graphite protective plates spout hole is provided with every piece of graphite protective plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720906434.7U CN207109141U (en) | 2017-07-25 | 2017-07-25 | A kind of ingot furnace for improving the average conversion efficiency of silicon ingot |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720906434.7U CN207109141U (en) | 2017-07-25 | 2017-07-25 | A kind of ingot furnace for improving the average conversion efficiency of silicon ingot |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207109141U true CN207109141U (en) | 2018-03-16 |
Family
ID=61585982
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720906434.7U Expired - Fee Related CN207109141U (en) | 2017-07-25 | 2017-07-25 | A kind of ingot furnace for improving the average conversion efficiency of silicon ingot |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207109141U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107326436A (en) * | 2017-07-25 | 2017-11-07 | 扬州续笙新能源科技有限公司 | A kind of ingot furnace for improving the average conversion efficiency of silicon ingot |
| CN116575116A (en) * | 2023-05-23 | 2023-08-11 | 吉利硅谷(谷城)科技有限公司 | Polycrystalline silicon ingot furnace |
-
2017
- 2017-07-25 CN CN201720906434.7U patent/CN207109141U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107326436A (en) * | 2017-07-25 | 2017-11-07 | 扬州续笙新能源科技有限公司 | A kind of ingot furnace for improving the average conversion efficiency of silicon ingot |
| CN116575116A (en) * | 2023-05-23 | 2023-08-11 | 吉利硅谷(谷城)科技有限公司 | Polycrystalline silicon ingot furnace |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN207109141U (en) | A kind of ingot furnace for improving the average conversion efficiency of silicon ingot | |
| CN107326436A (en) | A kind of ingot furnace for improving the average conversion efficiency of silicon ingot | |
| WO2022068700A1 (en) | Hot zone heater of single crystal furnace, and single crystal furnace | |
| CN102965727B (en) | Polycrystalline silicon ingot and casting method thereof | |
| CN104294360B (en) | Heat preservation ingotting furnace and application method thereof | |
| CN205474106U (en) | Protection seed crystal type crucible | |
| CN202323100U (en) | Straight-pull eight-inch silicon single crystal thermal field | |
| CN102384646A (en) | Crucible, furnace body and crucible resistor furnace for realizing internally heating | |
| CN205711039U (en) | A kind of thermal field structure of polycrystalline silicon casting furnace of lower exhaust | |
| CN210134179U (en) | Single crystal ingot furnace | |
| CN209584421U (en) | A kind of thermal field structure suitable for octagonal crystal silicon ingot casting | |
| CN203683722U (en) | Polycrystalline ingot furnace with overflow protecting function | |
| CN204198899U (en) | A kind of crucible with the production polysilicon of detachable dividing plate | |
| CN207987352U (en) | A kind of polygon polycrystalline silicon ingot casting device | |
| CN208023108U (en) | A kind of polycrystalline silicon ingot or purifying furnace | |
| CN208008942U (en) | A kind of solar energy quartz crucible seat device of card | |
| CN206015133U (en) | A kind of thermal field structure for reducing silicon material ingot casting power consumption | |
| CN208279715U (en) | A kind of polycrystalline cast ingot crucible | |
| CN208776873U (en) | A kind of energy conservation polycrystalline ingot furnace | |
| CN206438197U (en) | Single crystal growing furnace | |
| CN206553654U (en) | The overflow safeguard structure of polycrystalline silicon ingot or purifying furnace after a kind of upgrading | |
| CN207016891U (en) | A kind of cooling device of polycrystalline ingot furnace for oversize silicon ingot | |
| CN202744659U (en) | Energy-saving type thermal field structure of polycrystalline silicon ingot furnace | |
| CN207537596U (en) | A kind of polycrystalline silicon ingot or purifying furnace | |
| CN205874196U (en) | Quartz glass of sharp nature forced air cooling melts continuous gas and smelts and found stove |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180316 Termination date: 20200725 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |