CN116575116A - Polycrystalline silicon ingot furnace - Google Patents
Polycrystalline silicon ingot furnace Download PDFInfo
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- CN116575116A CN116575116A CN202310583303.XA CN202310583303A CN116575116A CN 116575116 A CN116575116 A CN 116575116A CN 202310583303 A CN202310583303 A CN 202310583303A CN 116575116 A CN116575116 A CN 116575116A
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- heat preservation
- crucible
- furnace body
- preservation layer
- furnace
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 32
- 238000004321 preservation Methods 0.000 claims abstract description 73
- 229920005591 polysilicon Polymers 0.000 claims description 17
- 238000009413 insulation Methods 0.000 claims description 7
- 239000010453 quartz Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 15
- 229910052710 silicon Inorganic materials 0.000 abstract description 15
- 239000010703 silicon Substances 0.000 abstract description 15
- 238000012797 qualification Methods 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 9
- 239000007788 liquid Substances 0.000 description 7
- 238000005266 casting Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000006911 nucleation Effects 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000003723 Smelting Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000013473 artificial intelligence Methods 0.000 description 1
- 239000010431 corundum Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/10—Production of homogeneous polycrystalline material with defined structure from liquids by pulling from a melt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/10—Process efficiency
Abstract
The invention discloses a polycrystalline silicon ingot furnace, which comprises an upper furnace body, a lower furnace body and a lower movable heat preservation component, wherein a through hole is formed in the middle of the bottom of the lower furnace body, a lower furnace cover is arranged outside the through hole, a support column is arranged on the inner side of the bottom of the lower furnace body, the upper end of the support column is horizontally fixed with a support plate, a heat exchange table is arranged on the support plate, and a crucible is placed on the heat exchange table; heaters are arranged around and above the crucible, side movable heat preservation layers are arranged around the heaters, lifting rods are fixedly connected to the tops of the side movable heat preservation layers, the lifting rods penetrate through the tops of the upper furnace body, and the upper ends of the lifting rods are connected to the driving ends of lifting motors; an upper heat preservation layer is arranged above the heater, a lifting rod is fixedly connected to the upper surface of the upper heat preservation layer, and the lifting rod is fixedly connected to the top of the upper furnace body. According to the invention, the directional growth of the silicon ingot is realized through the mobility of the lower movable heat-insulating layer and the side movable heat-insulating layer, and the overall qualification rate of the silicon ingot is improved.
Description
Technical Field
The invention relates to the technical field of polysilicon smelting equipment, in particular to a polysilicon ingot furnace.
Background
Currently, the annual average growth rate of the worldwide photovoltaic industry is 31.2%, and the growth rate thereof is first in the global energy power generation market. Along with the related policies of the platform delivery of each country and the corresponding plan, the photovoltaic industry truly goes to a rapidly developed road.
Polysilicon is a form of elemental silicon, and the elemental silicon is cooled and solidified after being melted to form polysilicon, so that the polysilicon has very stable chemical properties, does not have certain environmental pollution, and has the characteristic of good semiconductor materials, thereby being widely used in various aspects such as industry, agriculture, aerospace and the like. Polycrystalline silicon, which is the most dominant photovoltaic material in silicon materials, is not used in semiconductor components such as artificial intelligence, automatic control and the like, and is an important link affecting the development scale of the silicon material preparation industry. In the process of ingot casting, the temperature gradient ensures two basic conditions, one is that the temperature gradient is always lower and higher, and the solid-liquid interface moves upwards at the desired crystal growth speed; secondly, the solid-liquid interface is ensured to be as horizontal as possible. If the solid-liquid interface is not horizontal, this will necessarily result in a faster middle or side growth. If the four sides grow fast, shadows can be generated in the middle of the silicon ingot, which is not beneficial to directional solidification and impurity removal; if the center grows too fast, the crystals cross in the middle, which may lead to an increase in stress inside the multicrystalline silicon ingot, making the ingot prone to breakage.
Chinese patent CN203200374U discloses a polycrystalline silicon ingot furnace thermal field structure, including the furnace body, locate thermal field case in the furnace body, locate the crucible in the thermal field case, locate the thermal field incasement wall with heater between the crucible outer wall and locate the heat exchange platform of crucible bottom, the thermal field case includes thermal insulation cage and heat preservation shell, the heat preservation shell includes heat preservation curb plate, heat preservation roof and heat preservation bottom plate, the laminating of heat preservation curb plate is fixed in on the inside wall of thermal insulation cage, the furnace body bottom still is equipped with and is used for driving the heat preservation bottom plate lifts so that the laminating of heat preservation bottom plate is sealed or breaks away from heat preservation curb plate bottom open-ended lifter. In the crystallization production process, the lifting rod is controlled to drive the heat preservation bottom plate to descend, so that a gap capable of radiating heat is formed between the heat insulation cage and the heat preservation bottom plate, and therefore, the melted polysilicon forms a longitudinal temperature gradient and is crystallized longitudinally gradually, and finally, a polysilicon cast ingot is formed.
The device is the quadrangle, drives the heat preservation bottom plate through the lifter and descends, crystallizes from the bottom, and the adjacent two faces of the corner ingot of four angular positions of silicon ingot all are close to the crucible, receive from the influence of crucible impurity, the influence of thermal field boundary effect is big, produce the corner ingot that thermal field boundary effect influences big, low conversion efficiency easily to corner thermal field temperature distribution is inhomogeneous, leads to conversion efficiency relatively low, influences the discretion of silicon ingot efficiency, thereby influences the average conversion efficiency of whole silicon ingot.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide a polycrystalline silicon ingot furnace, which improves the existing quadrilateral thermal field, increases the thermal field size, upgrades the thermal field into an octagonal thermal field, solves the problems of low solid-liquid interface levelness, too large stress in the middle of the crystal and occurrence of bottom conversion rate angle ingot in the crystal growth process in the related art, and improves the product percent of pass of primary ingot casting.
In order to achieve the above object, the present invention provides the following technical solutions:
the polycrystalline silicon ingot furnace comprises an upper furnace body, a lower movable heat-preserving component, a crucible and a supporting plate, wherein a through hole is formed in the middle of the bottom of the lower furnace body, a lower furnace cover is arranged outside the through hole, a supporting column is arranged on the inner side of the bottom of the lower furnace body, the upper end of the supporting column is horizontally fixed with the supporting plate, a heat exchange table is arranged on the supporting plate, and the crucible is placed on the heat exchange table;
the crucible is a quartz crucible, the crucible is octagonal, and crucible guard plates are arranged at the bottom, the side surface and the top of the crucible;
the lower movable heat preservation assembly comprises a lower heat preservation layer and a lower movable heat preservation layer matched with the lower heat preservation layer, a movable rod piece is fixedly connected to the bottom of the lower movable heat preservation layer, the movable rod piece penetrates through the furnace cover to be connected to a driving motor, and the support column penetrates through the lower heat preservation layer and is fixedly connected with the lower heat preservation layer;
heaters are arranged around and above the crucible, side movable heat preservation layers are arranged around the heaters, lifting rods are fixedly connected to the tops of the side movable heat preservation layers, the lifting rods penetrate through the tops of the upper furnace body, and the upper ends of the lifting rods are connected to the driving ends of lifting motors; an upper heat preservation layer is arranged above the heater, a lifting rod is fixedly connected to the upper surface of the upper heat preservation layer, and the lifting rod is fixedly connected to the top of the upper furnace body.
Preferably, an opening is arranged in the middle of the top of the upper furnace body, and an upper furnace cover is arranged above the opening.
More preferably, the upper end of the heater is connected with an electrode, and the heater is suspended in the upper furnace body through the electrode.
Preferably, the side movable heat preservation layer is connected with the lower heat preservation layer and the upper heat preservation layer in a matched manner through a stepped opening formed in the end part.
Preferably, the upper furnace body and the lower furnace body can be tightly combined to achieve a sealing state.
More preferably, the crucible furnace further comprises an air inlet pipe, and the air inlet pipe penetrates through the upper furnace cover, the upper heat insulation layer and the heater to extend into the upper part of the crucible guard plate.
Compared with the prior art, the invention has the following beneficial effects:
(1) According to the invention, the movable heat-insulating layer is controlled by the driving motor, nucleation is started from the center of the bottom, so that corner seed crystals and inward seed crystals of the crucible wall are prevented from growing due to nucleation at the junction of the peripheral wall of the crucible and the bottom of the crucible, and meanwhile, the initial seed crystal growth and initial solid-liquid level control are convenient to adjust, the traditional cooling method of the direct pulling method from the periphery to the center is improved, and the condition of shadow generation in the polycrystalline silicon forming process can be perfectly improved.
(2) The invention improves the existing quadrilateral thermal field, increases the thermal field size, upgrades the thermal field into an octagonal thermal field, ensures that the temperature distribution of the thermal field at the corners is uniform, can avoid the generation of low-conversion-rate angle ingots with large influence of the boundary effect of the thermal field, improves the average conversion efficiency of silicon ingots, improves the quality of the whole silicon ingots, improves the discreteness of the efficiency of the silicon ingots, and improves the efficiency of the whole ingot by 0.05% -0.1%. Meanwhile, the furnace chamber space is effectively utilized, the effective area inside the thermal field is increased, the loading quantity is increased, and the thermal field of the octagonal ingot furnace with innovative design is used through the improvement of the thermal field structure, so that the overall ingot casting cost of the ingot furnace is further saved.
(3) According to the invention, through the up-and-down movement of the side movable heat preservation layer in the furnace body, the thermal field required to be cooled is accurately controlled, the generation of internal stress is reduced, the silicon ingot is directionally grown, the solid-liquid interface is ensured to be as horizontal as possible, the internal defects of the prepared polysilicon ingot are greatly reduced, impurities are uniformly pushed to the periphery of the silicon ingot in the casting process, the central part of a finished product is ensured to obtain a polysilicon ingot with very high quality, and the product percent of pass of one-time ingot casting is improved.
Drawings
FIG. 1 is a schematic diagram of a lower movable heat preservation layer of a polysilicon ingot furnace in an open state;
FIG. 2 is a schematic diagram showing the open state of a side active heat preservation layer of a polysilicon ingot furnace according to the present invention;
FIG. 3 is a schematic diagram of a cross-sectional structure of the middle part of an upper furnace body of the polysilicon ingot furnace;
FIG. 4 is a schematic diagram of the thermal field of an octagonal crucible of a polysilicon ingot furnace according to the present invention;
wherein: 1. a furnace cover is arranged; 2. a lifting rod; 3. an electrode; 4. a lifting rod; 5. an air inlet pipe; 6. an upper heat preservation layer; 7. a crucible guard plate; 8. a crucible; 9. a heat exchange station; 10. a side movable thermal insulation layer; 11. an upper furnace body; 12. a lower movable heat preservation component; 14. a lower furnace body; 15. a support column; 16. a furnace cover is arranged; 17. a support plate; 18. a heater; 12-1, a lower heat preservation layer; 12-2, a lower movable heat preservation layer; 12-3, a movable rod piece.
Detailed Description
The preferred embodiments of the present invention will be described below with reference to the accompanying drawings of the specification, it being understood that the preferred embodiments described herein are for illustration and explanation only, and not for limitation of the present invention, and embodiments of the present invention and features of the embodiments may be combined with each other without conflict.
Example 1
The polycrystalline silicon ingot furnace comprises an upper furnace body 11, a lower furnace body 14, a lower movable heat-preserving component 12, a crucible 8 and a supporting plate 17, wherein a through hole is formed in the middle of the bottom of the lower furnace body 14, a lower furnace cover 16 is arranged outside the through hole, a supporting column 15 is arranged on the inner side of the bottom of the lower furnace body 14, the supporting plate 17 is horizontally fixed at the upper end of the supporting column 15, a heat exchange table 9 is arranged on the supporting plate 17, and the crucible 8 is placed on the heat exchange table 9;
the lower movable heat preservation assembly 12 comprises a lower heat preservation layer 12-1 and a lower movable heat preservation layer 12-2 matched with the lower heat preservation layer 12-1, a movable rod piece 12-3 is fixedly connected to the bottom of the lower movable heat preservation layer 12-2, the movable rod piece 12-3 penetrates through the furnace cover 16 to be connected to a driving motor, the supporting column 15 penetrates through the lower heat preservation layer 12-1 and is fixedly connected with the lower heat preservation layer 12-1, and the driving motor adopts a servo speed reducing motor so as to ensure that the upper and lower movement of the lower movable heat preservation layer 12-2 is controlled by a controllable degree with enough accuracy;
the crucible 8 is a quartz crucible, the quartz crucible is not easy to oxidize and has better high-temperature stability, the crucible 8 is octagonal, so that the generation of angle ingots can be avoided, the bottom, the side surface and the top of the crucible 8 are provided with crucible guard plates 7, and the crucible guard plates 7 are corundum guard plates, so that silicon overflow caused by serious deformation of the crucible 8 at high temperature can be effectively avoided;
the crucible 8 is provided with heaters 18 around and above, the heaters 18 adopt resistance heaters, the resistance heaters can well control temperature gradients, side movable heat preservation layers 10 are arranged around the heaters 18, lifting rods 4 are fixedly connected to the tops of the side movable heat preservation layers 10, the lifting rods 4 penetrate through the tops of the upper furnace body 11, the upper ends of the lifting rods 4 are connected to the driving ends of lifting motors, and the lifting electrodes adopt servo speed reducing motors so as to ensure that the side movable heat preservation layers 10 can be controlled to move up and down accurately enough; an upper heat preservation layer 6 is arranged above the heater 18, a lifting rod 2 is fixedly connected to the upper surface of the upper heat preservation layer 6, and the lifting rod 2 is fixedly connected to the top of the upper furnace body 11.
In this embodiment, an opening is provided in the middle of the top of the upper furnace body 11, and an upper furnace cover 1 is provided above the opening.
In this embodiment, an electrode 3 is connected to the upper end of the heater 18, and the heater 18 is suspended in the upper furnace body 11 through the electrode 3.
In this embodiment, the side movable heat-insulating layer 10 is connected with the lower heat-insulating layer 12-1 and the upper heat-insulating layer 6 in a matched manner through a stepped opening formed at the end part, so that an internal heat-insulating state is achieved.
In this embodiment, the upper furnace body 11 and the lower furnace body 14 may be tightly combined to achieve a sealed state.
In this embodiment, the crucible furnace further comprises an air inlet pipe 5, and the air inlet pipe 5 penetrates through the upper furnace cover 1, the upper heat insulation layer 6 and the heater 18 to extend above the crucible guard plate 7.
The working principle of the polysilicon ingot furnace is as follows:
firstly, opening a lower furnace body to the lowest position, after the crucible guard plate 7 at the bottom of the crucible 8 is installed, loading polysilicon materials into the crucible 8, and then installing the crucible guard plates 7 at the side surface and the top of the crucible 8 in sequence; after the crucible 8 and the crucible guard 7 are assembled, they are placed at the center of the heat exchange table 9 by a special forklift, and the lower furnace 14 is closed. The side movable heat preservation layer 10 is adjusted through the driving motor, the lower movable heat preservation layer 12-2 is adjusted through the lifting motor, the upper heat preservation layer 6, the lower heat preservation layer 12-1, the lower movable heat preservation layer 12-2 and the side movable heat preservation layer 10 are matched to be in a closed state, the heat preservation layer can achieve the internal heat preservation effect, the furnace body is vacuumized through the vacuumizing device, and the temperature is raised through the heater 18 after the vacuumizing and leak detection are completed to melt the polysilicon raw materials in the crucible 8. After the melting is finished, the lower movable heat-insulating layer 12-2 in the center of the lower movable heat-insulating assembly 12 is opened, cold air in the furnace enters the center of the heat exchange table 9 to start cooling, the temperature of the silicon solution is reduced to 1440-1480 ℃ and kept for a period of time, after the nucleation is finished through the center of the heat exchange table 9, the side movable heat-insulating layer 10 is lifted for a preset distance, after the liquid level of the crystal growing at the bottom gradually approaches to the plane, the side heat-insulating layer 10 is gradually lifted to enable the crystal to grow directionally.
While the basic concepts have been described above, it will be apparent to those skilled in the art that the foregoing detailed disclosure is by way of example only and is not intended to be limiting. Although not explicitly described herein, various modifications, improvements, and offsets may occur to those skilled in the art to which this disclosure pertains. Such modifications, improvements, and offset processing are suggested in this specification and, therefore, remain within the spirit and scope of the exemplary embodiments of this specification.
Furthermore, those skilled in the art will appreciate that the various aspects of the specification can be illustrated and described in terms of several patentable categories or circumstances, including any novel and useful procedures, machines, products, or combinations of materials, or any novel and useful modifications thereof. Accordingly, aspects of the present description may be performed entirely by hardware, entirely by software, including firmware, resident software, micro-code, etc., or by a combination of hardware and software. The above hardware or software may be referred to as a "data block," module, "" engine, "" unit, "" component, "or" system. Furthermore, aspects of the specification may take the form of a computer product, comprising computer-readable program code, embodied in one or more computer-readable media.
It is noted that, if the description, definition, and/or use of a term in an attached material in this specification does not conform to or conflict with what is described in this specification, the description, definition, and/or use of the term in this specification controls.
Finally, it should be understood that the embodiments described in this specification are merely illustrative of the principles of the embodiments of this specification. Other variations are possible within the scope of this description. Thus, by way of example, and not limitation, alternative configurations of embodiments of the present specification may be considered as consistent with the teachings of the present specification. Accordingly, the embodiments of the present specification are not limited to the implementations explicitly described and depicted in this specification.
Claims (6)
1. The utility model provides a polycrystalline silicon ingot furnace which characterized in that: the furnace comprises an upper furnace body (11), a lower furnace body (14), a lower movable heat-preserving component (12), a crucible (8) and a supporting plate (17), wherein a through hole is formed in the middle of the bottom of the lower furnace body (14), a lower furnace cover (16) is arranged outside the through hole, a supporting column (15) is arranged on the inner side of the bottom of the lower furnace body (14), the supporting plate (17) is horizontally fixed at the upper end of the supporting column (15), a heat exchange table (9) is arranged on the supporting plate (17), and the crucible (8) is arranged on the heat exchange table (9);
the lower movable heat preservation assembly (12) comprises a lower heat preservation layer (12-1) and a lower movable heat preservation layer (12-2) matched with the lower heat preservation layer (12-1), a movable rod piece (12-3) is fixedly connected to the bottom of the lower movable heat preservation layer (12-2), the movable rod piece (12-3) penetrates through the lower furnace cover (16) to be connected to a driving motor, and the support column (15) penetrates through the lower heat preservation layer (12-1) and is fixedly connected with the lower heat preservation layer;
the crucible (8) is a quartz crucible, the crucible (8) is octagonal, and crucible guard plates (7) are arranged at the bottom, the side surfaces and the top of the crucible (8);
the crucible is characterized in that heaters (18) are arranged around and above the crucible (8), a side movable heat preservation layer (10) is arranged around the heaters (18), a lifting rod (4) is fixedly connected to the top of the side movable heat preservation layer (10), the lifting rod (4) penetrates through the top of the upper furnace body (11), and the upper end of the lifting rod (4) is connected to the driving end of a lifting motor; an upper heat preservation layer (6) is arranged above the heater (18), a lifting rod (2) is fixedly connected to the upper surface of the upper heat preservation layer (6), and the lifting rod (2) is fixedly connected to the top of the upper furnace body (11).
2. The polycrystalline silicon ingot furnace of claim 1, wherein: an opening is arranged in the middle of the top of the upper furnace body (11), and an upper furnace cover (1) is arranged above the opening.
3. The polycrystalline silicon ingot furnace of claim 1, wherein: the upper end of the heater (18) is connected with an electrode (3), and the heater (18) is suspended in the upper furnace body (11) through the electrode (3).
4. The polycrystalline silicon ingot furnace of claim 1, wherein: the side movable heat preservation layer (10) is respectively connected with the lower heat preservation layer (12-1) and the upper heat preservation layer (6) in a matched manner through a stepped opening arranged at the end part.
5. The polycrystalline silicon ingot furnace of claim 1, wherein: the upper furnace body (11) and the lower furnace body (14) can be tightly combined to achieve a sealing state.
6. A polysilicon ingot furnace as set forth in claim 3, wherein: the crucible furnace further comprises an air inlet pipe (5), and the air inlet pipe (5) penetrates through the upper furnace cover (1), the upper heat insulation layer (6) and the heater (18) to extend into the upper part of the crucible guard plate (7).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310583303.XA CN116575116A (en) | 2023-05-23 | 2023-05-23 | Polycrystalline silicon ingot furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310583303.XA CN116575116A (en) | 2023-05-23 | 2023-05-23 | Polycrystalline silicon ingot furnace |
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| Publication Number | Publication Date |
|---|---|
| CN116575116A true CN116575116A (en) | 2023-08-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310583303.XA Pending CN116575116A (en) | 2023-05-23 | 2023-05-23 | Polycrystalline silicon ingot furnace |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203200374U (en) * | 2013-02-27 | 2013-09-18 | 深圳市石金科技有限公司 | Heat field structure of polycrystalline silicon ingot furnace |
| CN104328492A (en) * | 2014-11-27 | 2015-02-04 | 吕铁铮 | Device for moving small insulating plate at bottom of polycrystalline silicon ingot furnace and polycrystalline silicon ingot furnace |
| CN207109141U (en) * | 2017-07-25 | 2018-03-16 | 扬州续笙新能源科技有限公司 | A kind of ingot furnace for improving the average conversion efficiency of silicon ingot |
| CN209584421U (en) * | 2019-01-23 | 2019-11-05 | 江苏协鑫硅材料科技发展有限公司 | A kind of thermal field structure suitable for octagonal crystal silicon ingot casting |
| EP3760767A1 (en) * | 2019-05-08 | 2021-01-06 | LDK Solar (Xinyu) Hi-Tech (Xinyu) Co., Ltd | Ingot furnace for directional solidification growth of crystalline silicon and application |
-
2023
- 2023-05-23 CN CN202310583303.XA patent/CN116575116A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203200374U (en) * | 2013-02-27 | 2013-09-18 | 深圳市石金科技有限公司 | Heat field structure of polycrystalline silicon ingot furnace |
| CN104328492A (en) * | 2014-11-27 | 2015-02-04 | 吕铁铮 | Device for moving small insulating plate at bottom of polycrystalline silicon ingot furnace and polycrystalline silicon ingot furnace |
| CN207109141U (en) * | 2017-07-25 | 2018-03-16 | 扬州续笙新能源科技有限公司 | A kind of ingot furnace for improving the average conversion efficiency of silicon ingot |
| CN209584421U (en) * | 2019-01-23 | 2019-11-05 | 江苏协鑫硅材料科技发展有限公司 | A kind of thermal field structure suitable for octagonal crystal silicon ingot casting |
| EP3760767A1 (en) * | 2019-05-08 | 2021-01-06 | LDK Solar (Xinyu) Hi-Tech (Xinyu) Co., Ltd | Ingot furnace for directional solidification growth of crystalline silicon and application |
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