CN204198899U - A kind of crucible with the production polysilicon of detachable dividing plate - Google Patents
A kind of crucible with the production polysilicon of detachable dividing plate Download PDFInfo
- Publication number
- CN204198899U CN204198899U CN201420685826.1U CN201420685826U CN204198899U CN 204198899 U CN204198899 U CN 204198899U CN 201420685826 U CN201420685826 U CN 201420685826U CN 204198899 U CN204198899 U CN 204198899U
- Authority
- CN
- China
- Prior art keywords
- crucible
- dividing plate
- crucible body
- space
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Silicon Compounds (AREA)
Abstract
The utility model discloses a kind of crucible with the production polysilicon of detachable dividing plate, comprise crucible body, crucible guard boards and crucible cover plate, in crucible body, be provided with the dividing plate for the internal cavities of crucible body being separated into the first space and second space, crucible body bottom inside is provided with for making dividing plate be fixed on slot in crucible body by grafting; The shape in the first space is consistent with the shape of crucible body internal cavities; Also comprise by silicon powder layer, SiO
2granular layer and loose the first silicon nitride coating, the second silicon nitride coating being arranged on the hard and compact of the side wall inner surfaces of crucible body and the broken silicon bed of material be arranged on the first silicon nitride coating that are arranged on granular layer; Silicon powder layer is arranged on the bottom interior surface of crucible body, and granular layer is arranged on silicon powder layer.This crucible does not need cold shock, just can produce bottom red sector short, the little and uniform high quality polycrystal silicon ingot of grain-size, and silica flour keeps not melting for a long time.
Description
Technical field
The utility model relates to polysilicon solar cell technical field, particularly a kind of crucible with the production polysilicon of detachable dividing plate.
Background technology
In recent years along with the exhaustion day by day of Nonrenewable energy resources, solar cell obtains and develops fast.Because the preparation technology of casting polycrystalline silicon is relatively simple, cost is far below silicon single crystal, and polysilicon progressively replaces the dominant position of pulling of silicon single crystal in solar cell material market, becomes topmost photovoltaic material in industry.But for pulling of silicon single crystal, various defects in casting polycrystalline silicon, as crystal boundary, dislocation, microdefect, and carbon impurity in material and oxygen, make the efficiency of conversion of polysilicon solar cell lower than pulling of crystals silicon solar cell, become the bottleneck of restriction polysilicon solar cell development.Polysilicon chip inner quality has a direct impact final battery conversion efficiency, and the inner quality improving polysilicon chip improves the important means of battery conversion efficiency.The inner quality of polysilicon chip depends on the quality of the polycrystal silicon ingot before its excision forming.Therefore, improve polycrystalline silicon ingot casting technology, obtain the research direction that high-quality polycrystal silicon ingot becomes each major company.
The size and the grain orientation that control the initial forming core of crystal are the prerequisite and the basis that realize improving polycrystal silicon ingot quality.Early stage conventional polycrystalline casting ingot method, initial forming core is random, freely, and be not the crystal grain and crystal orientation optimized, and grain-size differs, local defect densities is high, and " short slab " effect makes the efficiency of whole silicon chip drag down.For this shortcoming, when generally adopting multiple method to realize initial forming core inside recent industry, form uniform little crystal grain.Although there is the method for oneself in industry Li Ge major company to realize uniform little crystal grain, but thinking is consistent substantially, bottom is mainly used to have the quartz crucible of coarse quartz sand particle, and increase forming core amount in long brilliant elementary use cold shock, thus be there is the little crystal grain of certain size size uniformly.But quartz crucible in the market adopts quartz sand substantially after being crushed to certain particle diameter, brush and make high efficiency coating in crucible bottom.Inherently there is the defect that pattern differs in this quartz sand through Mechanical Crushing, the more difficult forming core point realizing uniformity, and the also more difficult control of the purity of quartz sand, likely cause red sector bottom polycrystal silicon ingot long.And cast high-quality polycrystal silicon ingot needs in nucleation stage use cold shock with such quartz crucible, can impact quartz crucible, increase the risk of Lou silicon., and common silicon powder layer can melt in ingot casting heat-processed, is unfavorable for the production of high quality silicon ingot further.Therefore, a kind of crucible of the production polysilicon that can solve the problem is badly in need of.
Utility model content
The utility model is uneven for the crucible nucleation pattern producing polysilicon in prior art, red sector is long bottom polycrystal silicon ingot, and cast high-quality polycrystal silicon ingot needs in nucleation stage use cold shock with such quartz crucible, can impact quartz crucible, increase the risk of Lou silicon, and common silicon powder layer can melt in ingot casting heat-processed, be unfavorable for the problem of the production of high quality silicon ingot, provide a kind of crucible producing polysilicon.
A kind of crucible with the production polysilicon of detachable dividing plate, comprise crucible body, also comprise and be around in crucible guard boards outside crucible body and for being sealed on the crucible cover plate in crucible body, be provided with for the internal cavities of crucible body being separated into the first space being used for accommodating particle being positioned at middle part and the dividing plate of second space being used for accommodating block of material and safe edge material being trapped among described first space surrounding in crucible body, the bottom inside of crucible body is provided with for making dividing plate be fixed on slot in crucible body by grafting; The shape in the first space that dividing plate surrounds is consistent with the shape of crucible body internal cavities;
Described high efficient crucible also comprise formed by silica flour silicon powder layer, by spherical SiO
2granuloplastic granular layer and loose the first silicon nitride coating, the second silicon nitride coating being arranged on the hard and compact of the side wall inner surfaces of crucible body and the broken silicon bed of material be arranged on the first silicon nitride coating that are arranged on granular layer;
Described silicon powder layer is arranged on the bottom interior surface of crucible body, and described granular layer is arranged on silicon powder layer.
As preferably, dividing plate is polylith, and the gap between adjacent two pieces of dividing plates can stop that the block material being positioned at described second space enters described first space.
As preferably, slot is directly offered in crucible body bottom inside and is formed.
As preferably, the position of the corresponding dividing plate of crucible body bottom inside is respectively arranged with fin, and each described fin all offers slot.
As preferably, the bottom area in what dividing plate surrounded be positioned at first space for accommodating particle at middle part is 1/2 ~ 1/3 of crucible body interior bottom portion area.
More preferably, the bottom area in first space for accommodating particle at what dividing plate surrounded be positioned at middle part is 1/2 of crucible body interior bottom portion area.
As preferably, the shape of the cross section of crucible body internal cavities is square, and the shape of the cross section in the first space that dividing plate surrounds is square.
As preferably, the shape of the cross section of crucible body internal cavities is circular, and the shape of the cross section in the first space that dividing plate surrounds is for circular.
As preferably, the height of dividing plate is 1/2 ~ 3/4 of crucible body internal cavities height.
In silicon powder layer of the present utility model, the particle diameter of silica flour is 50 μm ~ 100 μm, and the particle diameter of preferred described silica flour is 80 μm.
The thickness of silicon powder layer of the present utility model is 1mm ~ 2mm, and preferred described thickness is 1.5mm.
Spherical SiO of the present utility model
2particle is the spherical SiO adopting this area ordinary method synthesis
2particle.This spherical SiO
2it is even that particle has pattern, and purity is high, and uniform particle diameter is strong, chemical stability high.
The spherical SiO of granular layer of the present utility model
2the particle diameter of particle is 20 order ~ 70 orders, preferred described spherical SiO
2the particle diameter of particle is 50 order ~ 60 orders.
The thickness of granular layer of the present utility model is 1mm ~ 5mm, and preferred described thickness is 2.5mm.
The thickness of the first silicon nitride coating of the present utility model is 2mm ~ 3mm, and the thickness of the second silicon nitride coating is 1mm ~ 2mm.
First silicon nitride coating of the present utility model and the second silicon nitride coating are 2 ± 0.3 μm by β phase more than more than 50%, D50 value, and size distribution is the silicon nitride powder composition of bimodal distribution.
In the broken silicon bed of material of the present utility model, broken silicon material is of a size of 3 ~ 12mm.
Compared with prior art, the beneficial effects of the utility model are:
The crucible with the production polysilicon of detachable dividing plate of the present utility model, do not need cold shock, just can produce bottom red sector short, little and the uniform high quality polycrystal silicon ingot of grain-size, cutting gained polysilicon chip by high quality polycrystal silicon ingot, to have grain-size little and even, defect concentration is low, polysilicon chip electricity conversion high, and silica flour keeps not melting for a long time.
Accompanying drawing explanation
Fig. 1 longitudinal sectional drawing with the crucible of the production polysilicon of detachable dividing plate of the present utility model;
Fig. 2 transverse cross-sectional view with the crucible of the production polysilicon of detachable dividing plate of the present utility model;
Fig. 3 coating schematic diagram with the crucible of the production polysilicon of detachable dividing plate of the present utility model.
Reference numeral
1-crucible body, 2-crucible guard boards, 3-crucible cover plate, 4-slot, 5-dividing plate, 6-silicon powder layer, 7-granular layer, 81-first silicon nitride coating, 82-second silicon nitride coating, the broken silicon bed of material of 9-.
Embodiment
The utility model discloses a kind of crucible with the production polysilicon of detachable dividing plate, those skilled in the art can use for reference present disclosure, make suitable improvement.Special needs to be pointed out is, all similar replacements and change apparent to those skilled in the art, they are all deemed to be included within protection domain of the present utility model.
In order to make those skilled in the art understand the technical solution of the utility model better, below in conjunction with the drawings and specific embodiments, the utility model is described in further detail.Wherein, the composition of particle, block material and safe edge material is silicon material, for as known in the art.
As depicted in figs. 1 and 2, the crucible disclosed in embodiment of the present utility model with the production polysilicon of detachable dividing plate comprises crucible body 1, also comprise and be around in crucible guard boards 2 outside crucible body 1 and for being sealed on the crucible cover plate 3 in crucible body 1, be provided with for the internal cavities of crucible body 1 being separated into the first space being used for accommodating particle being positioned at middle part and the dividing plate 5 being used for the second space of accommodating block of material and safe edge material being trapped among described first space surrounding in crucible body 1, the bottom inside of crucible body 1 is provided with for making dividing plate 5 be fixed on slot 4 in crucible body 1 by grafting, the shape in the first space that dividing plate 5 surrounds is consistent with the shape of crucible body 1 internal cavities.The crucible body 1 wherein used is the crucible of commercially available production polysilicon conventional in this area.In order to make its appearance not easily be caused physical abuse, so that affect its internal structure or outward appearance, the utility model is provided with crucible guard boards 2 in the periphery of crucible body 1, and its size is slightly larger than crucible body 1.This crucible guard boards 2 can be fixedly connected with crucible body 1, also can be set to separable structure, crucible body 1 can be shifted out the shell that crucible guard boards 2 is formed when needing.
Fig. 1 is the longitudinal sectional view of the crucible of production polysilicon of the present utility model.As can be seen from Figure, described slot 4 is arranged at the bottom inside of crucible body 1.In an embodiment of the present utility model, this slot 4 is directly offered in crucible body 1 bottom inside and is formed.In another embodiment of the present utility model, be respectively arranged with fin in the position of the corresponding dividing plate 5 of crucible body 1 bottom inside, each described fin all offers slot 4.Those skilled in the art know the method to set up of this slot 4 by the foregoing description in the utility model.
Dividing plate 5 can be a monoblock or polylith, as long as the internal cavities of crucible body 1 can be realized to be divided into inside and outside two portions, if dividing plate 5 is one piece, and it should be tubular, dividing plate 5 shown in the present embodiment is polylith (shown in figure is four pieces), in order to ensure that block material is unlikely to the first space of bleeding in charging process, the gap between adjacent two pieces of dividing plates 5 can stop that the block material being positioned at described second space enters described first space.
Fig. 2 is the transverse sectional view of the crucible of production polysilicon of the present utility model.As can be seen from Figure, the internal cavities of crucible body 1 is divided into two space segments by the dividing plate 5 inserted in slot 4.Wherein, what be positioned at middle part is the first space for accommodating particle, and what be trapped among described first space surrounding is the second space for accommodating block of material and safe edge material.The shape in the first space that dividing plate 5 surrounds is consistent with the shape of crucible body 1 internal cavities.In an embodiment of the present utility model, the shape in the first space that dividing plate 5 surrounds is square.In another embodiment of the present utility model, the shape in the first space that dividing plate 5 surrounds is for circular.In addition, the shape in the first space that dividing plate 5 surrounds can also be rectangle, rhombus, the shape such as trapezoidal, as long as it is consistent with the shape of crucible body 1 internal cavities.In order to make to be heated in the castingprocesses of polycrystal silicon ingot evenly, as preferably, the shape in the first space that this dividing plate 5 surrounds is square.
In order to ensure that the first space that dividing plate 5 is separated into or second space are unlikely to excessive or too small, thus make the grain-size of the polysilicon chip obtained less and even, defect concentration is lower, silicon chip electricity conversion is higher, as preferably, in an embodiment of the present utility model, the bottom area in first space for accommodating particle at what dividing plate 5 surrounded be positioned at middle part is 1/2 ~ 1/3 of crucible body 1 interior bottom portion area.More preferably, in another embodiment of the present utility model, the bottom area in first space for accommodating particle at what dividing plate 5 surrounded be positioned at middle part is 1/2 of crucible body 1 interior bottom portion area.
The height of the utility model median septum 5 does not limit especially, and because namely it be removed before castingprocesses, therefore it highly can higher than the height of crucible body 1, also can lower than the height of crucible body 1.In order to ensure fully carrying out of heating and melting in castingprocesses, thus make the grain-size of the polysilicon chip obtained less and even, defect concentration is lower, silicon chip electricity conversion is higher, as preferably, in an embodiment of the present utility model, the height of this dividing plate 5 is 1/2 ~ 3/4 of crucible body 1 internal cavities height, thus also can dose a part of block material above it.More preferably, the height of this dividing plate 5 is 3/4 of crucible body 1 internal cavities height.
Before the utility model inserts dividing plate 5 in slot 4, crucible body 1 inside is carried out to the setting of coating.Thus it is short to be conducive to producing bottom red sector, the little and uniform high quality polycrystal silicon ingot of grain-size.This spray treatment is as the criterion with the insertion not affecting dividing plate 5.In an embodiment of the present utility model, in the silicon powder layer 6 sprayed, the particle diameter of silica flour is 50 μm, and thickness is 1mm.The spherical SiO of granular layer 7
2the particle diameter of particle is 70 orders, and thickness is 5mm.The thickness of described first silicon nitride coating 81 is 2mm, and the thickness of described second silicon nitride coating 82 is 1mm.In another embodiment of the present utility model, in the silicon powder layer 6 sprayed, the particle diameter of silica flour is 100 μm, and thickness is 2mm.The spherical SiO of granular layer 7
2the particle diameter of particle is 20 orders, and thickness is 1mm.The thickness of described first silicon nitride coating 81 is 3mm, and the thickness of described second silicon nitride coating 82 is 2mm.In order to protect the silicon powder layer 6 and granular layer 7 that spray in crucible body 1 bottom inside further, on the first silicon nitride coating 81, be also provided with the broken silicon bed of material 9.In another embodiment of the present utility model, in the broken silicon bed of material 9, the size (broken silicon material is of a size of the technical term of this area) of broken silicon material is 10mm.Those skilled in the art also can select other processing parameter.
Known by above description, the crucible with the production polysilicon of detachable dividing plate of the present utility model has following beneficial effect:
The crucible with the production polysilicon of detachable dividing plate of the present utility model, do not need cold shock, just can produce bottom red sector short, little and the uniform high quality polycrystal silicon ingot of grain-size, it is little and even that gained polysilicon chip has grain-size, defect concentration is low, silicon chip electricity conversion high.Meanwhile, the silicon material that also can improve in ingot casting process melts efficiency, shortens the thawing time, reduces the corrosion of crucible coating layer and shortens the ingot casting cycle.
The above is only preferred implementation of the present utility model; for those skilled in the art; under the prerequisite not departing from the utility model principle, can also make some changes or change, these changes and change also should be considered as protection domain of the present utility model.
Claims (10)
1. one kind has the crucible of the production polysilicon of detachable dividing plate, comprise crucible body (1), it is characterized in that, also comprise and be around in crucible body (1) crucible guard boards outward (2) and for being sealed on the crucible cover plate (3) in crucible body (1), be provided with for the internal cavities of crucible body (1) being separated into the first space for accommodating particle of being positioned at middle part and being trapped among the dividing plate (5) of second space for accommodating block of material and safe edge material of described first space surrounding in crucible body (1), the bottom inside of crucible body (1) is provided with for making dividing plate (5) be fixed on slot (4) in crucible body (1) by grafting,
The shape in the first space that dividing plate (5) surrounds is consistent with the shape of crucible body (1) internal cavities;
Described crucible also comprise formed by silica flour silicon powder layer (6), by the granuloplastic granular layer of spherical sio2 (7) be arranged on loose the first silicon nitride coating (81) on granular layer (7), the second silicon nitride coating (82) being arranged on the hard and compact of the side wall inner surfaces of crucible body (1) and the broken silicon bed of material (9) be arranged on the first silicon nitride coating (81);
Described silicon powder layer (6) is arranged on the bottom interior surface of crucible body (1), and described granular layer (7) is arranged on silicon powder layer (6).
2. the crucible with the production polysilicon of detachable dividing plate according to claim 1, it is characterized in that, dividing plate (5) is polylith, and the gap between adjacent two pieces of dividing plates (5) can stop that the block material being positioned at described second space enters described first space.
3. the crucible with the production polysilicon of detachable dividing plate according to claim 1, is characterized in that, slot (4) is directly offered in crucible body (1) bottom inside and formed.
4. the crucible with the production polysilicon of detachable dividing plate according to claim 1, it is characterized in that, the position of the corresponding dividing plate of crucible body (1) bottom inside is respectively arranged with fin, each described fin all offers slot (4).
5. the crucible with the production polysilicon of detachable dividing plate according to claim 1, it is characterized in that, the bottom area in first space for accommodating particle at what dividing plate (5) surrounded be positioned at middle part is 1/2 ~ 1/3 of crucible body (1) interior bottom portion area.
6. the crucible with the production polysilicon of detachable dividing plate according to claim 5, it is characterized in that, the bottom area in first space for accommodating particle at what dividing plate (5) surrounded be positioned at middle part is 1/2 of crucible body (1) interior bottom portion area.
7. the crucible with the production polysilicon of detachable dividing plate according to claim 1, it is characterized in that, the shape of the cross section of crucible body (1) internal cavities is square, and the shape of the cross section in the first space that dividing plate (5) surrounds is square.
8. the crucible with the production polysilicon of detachable dividing plate according to claim 1, it is characterized in that, the shape of the cross section of crucible body (1) internal cavities is circular, and the shape of the cross section in the first space that dividing plate (5) surrounds is for circular.
9. the crucible with the production polysilicon of detachable dividing plate according to claim 1, is characterized in that, the height of described dividing plate (5) is 1/2 ~ 3/4 of crucible body (1) internal cavities height.
10. the crucible of production polysilicon according to claim 1, is characterized in that, the thickness of described first silicon nitride coating (81) is 2mm ~ 3mm, and the thickness of described second silicon nitride coating (82) is 1mm ~ 2mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420685826.1U CN204198899U (en) | 2014-11-14 | 2014-11-14 | A kind of crucible with the production polysilicon of detachable dividing plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420685826.1U CN204198899U (en) | 2014-11-14 | 2014-11-14 | A kind of crucible with the production polysilicon of detachable dividing plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204198899U true CN204198899U (en) | 2015-03-11 |
Family
ID=52656879
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420685826.1U Expired - Fee Related CN204198899U (en) | 2014-11-14 | 2014-11-14 | A kind of crucible with the production polysilicon of detachable dividing plate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204198899U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104711673A (en) * | 2015-03-13 | 2015-06-17 | 湖南红太阳光电科技有限公司 | Preparation method of polycrystalline silicon ingot |
| CN111349967A (en) * | 2018-12-20 | 2020-06-30 | 比亚迪股份有限公司 | Efficient crucible and preparation method thereof |
-
2014
- 2014-11-14 CN CN201420685826.1U patent/CN204198899U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104711673A (en) * | 2015-03-13 | 2015-06-17 | 湖南红太阳光电科技有限公司 | Preparation method of polycrystalline silicon ingot |
| CN111349967A (en) * | 2018-12-20 | 2020-06-30 | 比亚迪股份有限公司 | Efficient crucible and preparation method thereof |
| CN111349967B (en) * | 2018-12-20 | 2022-03-18 | 比亚迪股份有限公司 | Efficient crucible and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104018219B (en) | A kind of preparation method of narrow black surround high-efficiency polycrystalline silicon chip | |
| CN103088417B (en) | A kind of polycrystalline cast ingot high efficient crucible and preparation method thereof | |
| CN104195634B (en) | Large scale silicon ingot polycrystalline ingot furnace thermal field structure | |
| JP5605902B2 (en) | Method for producing silica glass crucible, silica glass crucible | |
| CN102644108B (en) | A kind of loading method of growing silicon crystals in casting process and the technique of growing silicon crystal | |
| KR101779267B1 (en) | Polycrystalline silicon ingot, method for producing the same, and crucible | |
| CN107573101A (en) | A kind of crucible and preparation method thereof | |
| TWM443938U (en) | Solar cell | |
| KR20130059272A (en) | Crystalline silicon ingot and method of fabricating the same | |
| CN204198899U (en) | A kind of crucible with the production polysilicon of detachable dividing plate | |
| CN102965727B (en) | Polycrystalline silicon ingot and casting method thereof | |
| CN104593862A (en) | Loading method of high-efficiency crucible for producing polycrystalline silicon | |
| CN204198898U (en) | A kind of crucible with the production polysilicon of detachable dividing plate | |
| CN205474106U (en) | Protection seed crystal type crucible | |
| CN102925971A (en) | High-efficiency polycrystal ingot casting thermal field | |
| CN102432277B (en) | One-sided slurry absorption technology of quartz ceramic crucible and used quartz slurry thereof | |
| CN204530023U (en) | A kind of crucible producing polysilicon | |
| CN202881449U (en) | Heat-preservation graphite protecting plate for photovoltaic ingot furnace | |
| CN204198900U (en) | A kind of crucible with the production polysilicon of detachable dividing plate | |
| CN204530022U (en) | A kind of crucible producing polysilicon | |
| CN203174222U (en) | Thermal field structure of polycrystalline silicon ingot casting furnace | |
| CN103255471B (en) | Crystalline silicon and preparation method thereof | |
| CN203159742U (en) | Efficient crucible for casting polycrystal ingot | |
| CN205529144U (en) | Crucible for polycrystalline silicon cast ingots | |
| CN204111924U (en) | A kind of large size silicon ingot polycrystalline ingot furnace Novel hot field structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150311 Termination date: 20211114 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |