CN207183284U - A kind of TVS diode encapsulating structure - Google Patents
A kind of TVS diode encapsulating structure Download PDFInfo
- Publication number
- CN207183284U CN207183284U CN201721252636.0U CN201721252636U CN207183284U CN 207183284 U CN207183284 U CN 207183284U CN 201721252636 U CN201721252636 U CN 201721252636U CN 207183284 U CN207183284 U CN 207183284U
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- CN
- China
- Prior art keywords
- dao
- chip
- pin
- encapsulating structure
- tin cream
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The utility model provides a kind of TVS diode encapsulating structure, belong to diode packaging technology field, including upper bracket, lower carriage, chip, tin cream and black glue body, it is characterized in that, upper bracket includes the first Ji Dao and the first pin, lower carriage includes the second Ji Dao and second pin, the upper surface of chip is connected by tin cream with the first Ji Dao, the lower surface of chip is connected by tin cream with the second Ji Dao, black glue body wraps up the first Ji Dao, chip, the second Ji Dao and forms plastic package structure, and first pin is arranged to sea-gull leg structure；The difficulty of processing of technique is reduced by the design of sea-gull pin, easily controllable process conditions, improves production efficiency, while reduces plastic-sealed body size, the usage amount of black glue body is saved, saves production cost.
Description
Technical field
Diode packaging technology field is the utility model is related to, is in particular a kind of TVS diode encapsulating structure.
Background technology
TVS diodes are also known as transient voltage suppressor diode, are a kind of high-effect protection devices of diode.
When the two poles of the earth of TVS diodes are by reverse transient state high energy impact events, it can be with high speed（Minus the 12 of up to 10
Power second-time）Its impedance is reduced suddenly, while absorb a high current, the voltage clamp between its both ends is predetermined at one
Numerically, so that it is guaranteed that circuit element below damages from the impact of transient state high-energy.
The TVS diode encapsulating structure of prior art as depicted in figs. 1 and 2, including upper bracket, lower carriage, chip, tin cream
With black glue body, upper bracket and lower carriage include Ji Dao and pin, the upper and lower surface of chip by tin cream respectively with upper bracket and
The Ji Dao of lower carriage is connected, and is then wrapped to form plastic-sealed body by black glue body, and pin then bends inwards to form interior button-type structure, this
Button-type pin forming technology difficulty is larger in kind, is difficult to control, and the encapsulating structure formed is larger to the consumption of black glue body,
In addition, chip upper surface is connected by tin cream with the Ji Dao faces of upper bracket, after welding, had between chip and base island larger
Cavity produces, and it is electrical to influence diode.
The content of the invention
In order to solve the above problems, the utility model provides a kind of TVS diode encapsulating structure simple in construction, reduces
Technique difficulty of processing, improves production efficiency, while reduces plastic-sealed body size, saves black glue body usage amount, reduces
Production cost, enhance product performance.
The utility model is that technical scheme is used by solving its technical problem：A kind of TVS diode encapsulating structure, bag
Including upper bracket, lower carriage, chip, tin cream and black glue body, it is characterised in that upper bracket includes the first Ji Dao and the first pin, under
Bracket cross section is arranged to T fonts, and lower carriage includes the second Ji Dao and second pin, and the upper surface of chip passes through tin cream and the first base
Island is connected, and the lower surface of chip is connected by tin cream with the second Ji Dao, and black glue body wraps up the first Ji Dao, chip, the second base
Island forms plastic-sealed body, and first pin is arranged to sea-gull leg structure.
Further, first pin is arranged to outward-dipping and end outward bending in the horizontal direction.
Further, the first Ji Dao lower surfaces are provided with salient point, and the upper surface of chip is connected by tin cream with salient point
Connect.
Further, stress hole is provided with the upper bracket, the stress hole is provided in round.
Further, the second base island size is more than the first Ji Dao.
Further, the plastic-sealed body is arranged to one end of die joint and the first Ji Dao upper surface flush, die joint
The other end and the second Ji Dao upper surface flush.
The beneficial effects of the utility model are that existing interior button-type pin is changed to the sea-gull pin of outer fold-type, coordinate lower carriage T
Font pin, plastic-sealed body is formed because black glue body wraps up the first Ji Dao, chip, the second Ji Dao, thus it is constant i.e. in overall dimensions
It can reduce the size of TVS diode plastic-sealed body in the case that pin end spacing is constant, reduce making for black glue body in plastic-sealed body
Dosage, save production cost；And the design of outer fold-type pin greatly reduces the moulding process difficulty of TVS diode, is easy to
Process conditions are controlled, improve production efficiency；The salient point of setting, which contacts existing chip with Ji Dao face, is changed to a shape for contact
Formula, reduce the cavity between chip and framework, improve the electrical yield of diode, at the same the setting of salient point increase chip with
Upper bracket Ji Dao contact area, beneficial to the welding pulling force between increase chip and upper bracket base island, avoid following process process
It is middle because welding pulling force is too small make to influence product the disengaging of chip and support it is electrical；Plastic-sealed body is arranged to unsymmetric structure, Neng Gouyou
Effect protection lower carriage pin, prevents that its is exposed, improves product electrical property.
Brief description of the drawings
Fig. 1 is the main structure diagram of prior art TVS diode encapsulating structure；
Fig. 2 is the overlooking the structure diagram of prior art TVS diode encapsulating structure；
Fig. 3 is main structure diagram of the present utility model；
Fig. 4 is overlooking the structure diagram of the present utility model.
In figure：1. upper bracket, 2. lower carriages, 3. chips, 4. tin creams, 5. black glue bodies, 6. first Ji Dao, 7. first pins,
8. the second Ji Dao, 9. second pins, 10. plastic-sealed bodies, 11. salient points, 12. stress holes.
Embodiment
In order that the purpose of this utility model, technical scheme and advantage are more clearly understood, below in conjunction with accompanying drawing and implementation
Example, the utility model is further elaborated.It should be appreciated that specific embodiment described herein is only explaining this
Utility model, it is not used to limit the utility model.
As shown in figure 3, the utility model discloses a kind of TVS diode encapsulating structure, including upper bracket 1, lower carriage 2,
Chip 3, tin cream 4 and black glue body 5, upper bracket 1 include the first base island 6 and the first pin 7, and the section of lower carriage 2 is arranged to T fonts,
Lower carriage 2 includes the second base island 8 and second pin 9, and the upper surface of chip 3 is connected by tin cream 4 with the first base island 6, chip 3
Lower surface be connected by tin cream 4 with the second base island 8, black glue body 5 wrap up the first base island 6, chip 3, the second base island 8 formed modeling
Body 10 is sealed, first pin 7 is arranged to sea-gull leg structure.
First pin 7 described in the utility model is arranged to outward-dipping and end outward bending in the horizontal direction.
The lower surface of first base island 6 described in the utility model is provided with salient point 11, the upper surface of chip 3 by tin cream 4 with
Salient point 11 is connected.
As shown in figure 4, being provided with stress hole 12 on upper bracket 1 described in the utility model, the stress hole 12 is arranged to
It is circular.
The size of second base island 8 described in the utility model is more than the first base island 6.
Plastic-sealed body 10 described in the utility model is arranged to one end of die joint and the upper surface flush on the first base island 6,
The other end of die joint and upper surface flush first pin 7 described in the utility model on the second base island 8 are arranged to lean outward
Oblique and end outward bending in the horizontal direction.
Existing interior button-type pin is changed to the sea-gull pin of outer fold-type by the utility model, coordinates the T-shaped pin of lower carriage, due to
Black glue body wraps up the first Ji Dao, chip, the second Ji Dao and forms plastic-sealed body, therefore in the constant i.e. pin end spacing of overall dimensions not
The size of TVS diode plastic-sealed body can be reduced in the case of change, the usage amount of black glue body in plastic-sealed body is reduced, saves production
Cost；Meanwhile the design of outer fold-type pin greatly reduces the moulding process difficulty of TVS diode, easily controllable process conditions,
Improve production efficiency；The salient point of setting, which contacts existing chip with Ji Dao face, is changed to a form for contact, reduces chip
Cavity between framework, the electrical yield of diode is improved, while the setting of salient point increases chip and upper bracket Ji Dao's
Contact area, beneficial to the welding pulling force between increase chip and upper bracket base island, avoid during following process because welding pulling force
It is too small to depart from chip and support and to influence product electrical；Plastic-sealed body is arranged to unsymmetric structure, can effectively protect lower carriage
Pin, prevent that its is exposed, improve product electrical property.
Claims (6)
1. a kind of TVS diode encapsulating structure, including upper bracket（1）, lower carriage（2）, chip（3）, tin cream（4）With black glue body
（5）, it is characterised in that upper bracket（1）Including the first Ji Dao（6）With the first pin（7）, lower carriage（2）Section is arranged to T words
Type, lower carriage（2）Including the second Ji Dao（8）And second pin（9）, chip（3）Upper surface pass through tin cream（4）With the first Ji Dao
（6）It is connected, chip（3）Lower surface pass through tin cream（4）With the second Ji Dao（8）It is connected, black glue body（5）Wrap up the first Ji Dao
（6）, chip（3）, the second Ji Dao（8）Form plastic-sealed body（10）, first pin（7）It is arranged to sea-gull leg structure.
2. TVS diode encapsulating structure according to claim 1, it is characterised in that first pin（7）Be arranged to
Outer incline and end outward bending in the horizontal direction.
3. TVS diode encapsulating structure according to claim 1, it is characterised in that first Ji Dao（6）Lower surface is set
It is equipped with salient point（11）, chip（3）Upper surface pass through tin cream（4）With salient point（11）It is connected.
4. TVS diode encapsulating structure according to claim 1, it is characterised in that the upper bracket（1）On be provided with should
Power hole（12）, the stress hole（12）It is provided in round.
5. TVS diode encapsulating structure according to claim 1, it is characterised in that second Ji Dao（8）Size is more than
First Ji Dao（6）.
6. TVS diode encapsulating structure according to claim 1, it is characterised in that the plastic-sealed body（10）It is arranged to point
The one end in type face and the first Ji Dao（6）Upper surface flush, the other end of die joint and the second Ji Dao（8）Upper surface it is equal
Together.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721252636.0U CN207183284U (en) | 2017-09-27 | 2017-09-27 | A kind of TVS diode encapsulating structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721252636.0U CN207183284U (en) | 2017-09-27 | 2017-09-27 | A kind of TVS diode encapsulating structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207183284U true CN207183284U (en) | 2018-04-03 |
Family
ID=61748504
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721252636.0U Active CN207183284U (en) | 2017-09-27 | 2017-09-27 | A kind of TVS diode encapsulating structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207183284U (en) |
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2017
- 2017-09-27 CN CN201721252636.0U patent/CN207183284U/en active Active
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 273100 No. 166 Chunqiu East Road, Qufu City, Jining City, Shandong Province Patentee after: Shandong crystal guided microelectronic Limited by Share Ltd Address before: 273100 Taiwan City Industrial Park, Qufu City, Jining, Shandong. Patentee before: Shandong Jing Dao Microtronics A/S |