CN207097803U - A kind of heat abstractor and its IGBT module - Google Patents
A kind of heat abstractor and its IGBT module Download PDFInfo
- Publication number
- CN207097803U CN207097803U CN201720927059.4U CN201720927059U CN207097803U CN 207097803 U CN207097803 U CN 207097803U CN 201720927059 U CN201720927059 U CN 201720927059U CN 207097803 U CN207097803 U CN 207097803U
- Authority
- CN
- China
- Prior art keywords
- heat
- aluminium
- radiator body
- heat abstractor
- ceramics
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
This disclosure relates to a kind of heat abstractor and its IGBT modules.The heat abstractor includes heat carrier and heat radiator body, and the heat carrier is that ceramics cover aluminium heat carrier；One or more ceramics are combined with the heat radiator body with being integrally formed cover aluminium heat carrier.The disclosure additionally provides the IGBT modules including IGBT circuit boards and the heat abstractor.The heat abstractor simple production process that the disclosure provides, the faying face tight between each aspect, has higher bonding strength and heat conduction efficiency, and aluminium lamination is softer makes the cold-resistant thermal shock resistance properties of heat abstractor more superior.
Description
Technical field
This disclosure relates to heat sink technology field, in particular it relates to a kind of heat abstractor and its IGBT modules.
Background technology
IGBT (Insulated Gate Bipolar Transistor) is one kind by double pole triode and insulated-gate type
The compound full-control type voltage driven type power semiconductor of FET composition, is widely used on various electronic equipments.With
The development of the high current electronics such as frequency converter, proposes higher requirement for the performance of igbt chip, igbt chip is held
By higher electric current, heat caused by its work is continuously increased.Existing igbt chip is directly encapsulated using vacuum welding technology,
Bubble or the uneven cavity that can all make layer formation shape size different of solder layer are produced in welding process；Sky in layer
Hole can trigger current concentrated effect to cause thermoelectricity punctures, heat transfer is bad etc..
Therefore need the defects of a kind of new heat abstractor overcomes vacuum welding in the prior art badly, obtain thermal conduction effect more
Good heat abstractor.
Utility model content
The purpose of the disclosure is to provide a kind of heat abstractor, and the heat abstractor has good thermal conduction effect, structure letter
Single, processing technology difficulty is low.
To achieve these goals, the disclosure provides a kind of heat abstractor, and the heat abstractor includes heat carrier and radiating
Body, the heat carrier are that ceramics cover aluminium heat carrier；One or more ceramics are combined with the heat radiator body with being integrally formed
Cover aluminium heat carrier.
Pass through above-mentioned technical proposal, the heat abstractor simple production process that the disclosure provides, the faying face between each aspect
Tight, there is higher bonding strength and heat conduction efficiency, and aluminium lamination is softer makes the cold-resistant thermal shock resistance properties of heat abstractor more
It is superior.
Alternatively, the heat radiator body is aluminium silicon-carbon heat radiator body；The aluminium silicon-carbon heat radiator body includes silicon carbide porous
Skeleton and it is filled in the intraskeletal aluminium of the silicon carbide porous.
Alternatively, the ceramics cover aluminium heat carrier and include Ceramic insulator and be arranged at the relative of the Ceramic insulator
The first aluminium lamination and the second aluminium lamination on two surfaces, and the Ceramic insulator is connected with being integrally formed by first aluminium lamination
It is connected in the heat radiator body；The Ceramic insulator isolates second aluminium lamination with first aluminium lamination.
Alternatively, the surface that the heat radiator body is connected with first aluminium lamination is flat surface.
Alternatively, the Ceramic insulator is alumina ceramic plate, reinforced alumina ceramic plate, al nitride ceramic board or nitrogen
SiClx ceramic wafer；First aluminium lamination and second aluminium lamination are aluminum layer and/or aluminium alloy layer.
Alternatively, the thickness of first aluminium lamination is 0.02~0.15mm, the thickness of the Ceramic insulator for 0.25~
1mm, the thickness of second aluminium lamination is 0.02~1.0mm.
Alternatively, second aluminium lamination and the apparent surface of Ceramic insulator connection surface are connected with copper with being also integrally formed
Layer, the thickness of the layers of copper is 0.2~0.6mm.
Alternatively, one or more thermal columns are additionally provided with the heat radiator body；One end of the thermal column and radiating
Body is fixedly connected, and the other end of thermal column is free end.
Alternatively, the thermal column covers relative two that aluminium heat carrier is separately positioned on the heat radiator body with the ceramics
On individual surface；The thermal column covers at least one of copper post selected from aluminium post, aluminium alloy column and aluminium；The thermal column is integrally formed
Ground is connected in the heat radiator body.
Alternatively, when being combined with multiple ceramics with being integrally formed in the heat radiator body and covering aluminium heat carrier, different ceramics
Aluminium heat carrier is covered to set at each interval.
The disclosure additionally provides a kind of IGBT modules, and the IGBT modules include IGBT circuit boards and radiating as described above fills
Put.
Other feature and advantage of the disclosure will be described in detail in subsequent specific embodiment part.
Brief description of the drawings
Accompanying drawing is for providing further understanding of the disclosure, and a part for constitution instruction, with following tool
Body embodiment is used to explain the disclosure together, but does not form the limitation to the disclosure.In the accompanying drawings：
Fig. 1 is the side view of the heat abstractor without layers of copper.
Fig. 2 is the side view of the heat abstractor with layers of copper.
Description of reference numerals
The Ceramic insulator of 1 heat radiator body 2
The aluminium lamination of 3 first aluminium lamination 4 second
The layers of copper of 5 thermal column 6
Embodiment
The embodiment of the disclosure is described in detail below in conjunction with accompanying drawing.It should be appreciated that this place is retouched
The embodiment stated is merely to illustrate and explained the disclosure, is not limited to the disclosure.
To achieve these goals, the disclosure provides a kind of heat abstractor, and the heat abstractor includes heat carrier and radiating
Body 1, the heat carrier are that ceramics cover aluminium heat carrier；One or more ceramics are combined with the heat radiator body with being integrally formed
Cover aluminium heat carrier.
Pass through above-mentioned technical proposal, the heat abstractor simple production process that the disclosure provides, the faying face between each aspect
Tight, has higher a bonding strength and heat conduction efficiency, and ceramics cover that aluminum surface layer is softer to rush heat abstractor cold-hot
It is more superior to hit performance.
According to the above-mentioned heat abstractor of the disclosure, alternatively, the heat radiator body 1 is aluminium silicon-carbon heat radiator body；The aluminium silicon
Carbon heat radiator body includes silicon carbide porous skeleton and is filled in the intraskeletal aluminium of the silicon carbide porous；It is described to be filled in carborundum
Aluminium in stephanoporate framework can be filled in silicon carbide porous skeleton by integrally formed mode；Powder metallurgy can also be used
Method prepares aluminium silicon-carbon heat radiator body：Silicon-carbide particle is prepared, by the silicon-carbide particle according to certain ratio and aluminium powder
Aluminium silicon-carbon heat radiator body is prepared by cold moudling, hot pressing, annealing and insulation after mixing；It is described to be filled in silicon carbide porous
Intraskeletal aluminium can strengthen the structural strength and bonding strength of heat radiator body.
According to the above-mentioned heat abstractor of the disclosure, alternatively, the ceramics, which cover aluminium heat carrier, to be included Ceramic insulator 2 and sets
In the first aluminium lamination 3 and the second aluminium lamination 4 on relative two surface of the Ceramic insulator 2, and the Ceramic insulator 2
It is connected to being integrally formed in the heat radiator body 1 by first aluminium lamination 3；The Ceramic insulator 2 is by second aluminium
Layer 4 is isolated with first aluminium lamination 3；First aluminium lamination 3 is integrally formed to connect heat radiator body 1 and Ceramic insulator 2, makes two
Without cavity, crack between person, there is more preferable bonding strength.
According to the above-mentioned heat abstractor of the disclosure, alternatively, the table that the heat radiator body 1 is connected with first aluminium lamination 3
Face is flat surface；Flat surface is advantageous to the connection between the first aluminium lamination 3 and heat radiator body 1, is not likely to produce gap.
According to the above-mentioned heat abstractor of the disclosure, alternatively, the Ceramic insulator 2 is alumina ceramic plate, toughness reinforcing oxidation
Aluminium ceramic wafer, al nitride ceramic board or silicon nitride ceramic plate；First aluminium lamination 3 and second aluminium lamination 4 be aluminum layer and/or
Aluminium alloy layer；The ceramic wafer of above-mentioned material has relatively low density and higher hardness, has using increasing the service life, aluminium lamination or
The hardness of person's aluminium alloy layer is relatively low, and cold-resistant thermal shock resistance properties is more superior.
According to the above-mentioned heat abstractor of the disclosure, alternatively, the thickness of first aluminium lamination 3 is 0.02~0.15mm, described
The thickness of Ceramic insulator 2 is 0.25~1mm, and the thickness of second aluminium lamination 4 is 0.02~1.0mm；Using the thickness
Aluminium lamination may improve the ceramic efficiency and structural strength for covering aluminium heat carrier with Ceramic insulator 2, increase the service life.
According to the above-mentioned heat abstractor of the disclosure, alternatively, second aluminium lamination 4 and the phase of the connection surface of Ceramic insulator 2
Layers of copper 6 is connected with while surface is also integrally formed, the thickness of the layers of copper 6 is 0.2~0.6mm；Addition layers of copper 6 is advantageous to heat
Conduction and improve ceramics and cover support of the aluminum bronze heat carrier for electric elements, improve ceramics cover aluminum bronze heat carrier structure it is strong
Degree, increases the service life.
According to the above-mentioned heat abstractor of the disclosure, alternatively, one or more thermal columns are additionally provided with the heat radiator body 1
5；The quantity of the thermal column 5 unrestricted choice, one end and the heat radiator body 1 of the thermal column 5 can fix according to the actual requirements
Connection, the other end of thermal column 5 is free end；The thermal column 5 can conduct the heat that IGBT modules are given out, and improve and dissipate
The thermal efficiency.
According to the above-mentioned heat abstractor of the disclosure, alternatively, the thermal column 5 covers aluminium heat carrier with the ceramics and set respectively
On relative two surface of the heat radiator body 1；The thermal column 5 is covered in copper post selected from aluminium post, aluminium alloy column and aluminium
It is at least one；The thermal column 5 is connected in the heat radiator body 1 with being integrally formed；Integrally formed thermal column 5 is with radiating this
Bonding strength between body 1 is higher.
According to the above-mentioned heat abstractor of the disclosure, alternatively, multiple ceramics are combined with being integrally formed in the heat radiator body 1
Aluminium heat carrier is covered, and different ceramics cover aluminium heat carrier and set at each interval.
The disclosure additionally provides a kind of IGBT modules, and the IGBT modules include IGBT circuit boards and radiating as described above fills
Put.
The heat abstractor of the disclosure is further described below in conjunction with the accompanying drawings.
As shown in figure 1, the heat abstractor covers aluminium heat carrier, aluminium silicon-carbon heat radiator body and thermal column 5 including ceramics；It is described
The thickness of aluminium silicon-carbon heat radiator body is 4.5mm, a length of 215mm, a width of 110mm；The thermal column 5 covers aluminium heat conduction with the ceramics
Body is separately positioned on two relative surfaces of the aluminium silicon-carbon heat radiator body；The aluminium silicon-carbon heat radiator body is covered aluminium with ceramics and led
Hot body, aluminium silicon-carbon heat radiator body and the surface that thermal column 5 is connected are flat surface；The ceramics cover aluminium heat carrier or ceramics
It is 2 to cover copper aluminium heat carrier, and 6.9mm is spaced between 2 heat carriers；The thermal column 5 is 368 to meet radiating requirements.
The ceramics, which cover aluminium heat carrier, includes the Ceramic insulator 2 and be arranged at the Ceramic insulator that thickness is 0.32mm
The first aluminium lamination 3 that thickness on 2 relative two surface is 0.1mm and the second aluminium lamination 4 that thickness is 0.5mm, the ceramics
Insulation board 2 isolates second aluminium lamination 4 with first aluminium lamination 3；First aluminium lamination, the 3 integrally formed aluminium silicon-carbon that is connected to radiates
The bonding strength of aluminium heat carrier and aluminium silicon-carbon heat radiator body is covered on body with raising ceramics；First aluminium lamination 3, the second aluminium lamination 4
It is between insulated ceramic plates 2 and integrally formed.Ceramics cover can etch to form IGBT electricity on the second aluminium lamination 4 of aluminium heat carrier
Road plate, ceramics cover aluminium heat carrier support igbt chip and produce the effect of heat conduction and insulation, ensure the peace of IGBT modules work
Quan Xing.
The length of the thermal column 5 is 8mm, integrally formed to be connected in aluminium silicon-carbon heat radiator body, and the thermal column 5 is straight
Footpath is that 4mm one end is fixedly connected with aluminium silicon-carbon heat radiator body, and a diameter of 3mm other end is free end；The thermal column 5
Outer surface contacts with coolant, by the heat transfer of IGBT operations to coolant.
Preferably a kind of embodiment of the disclosure is used as shown in Figure 2, the ceramics cover aluminium heat carrier and are including thickness
0.32mm Ceramic insulator 2 and the thickness that is arranged on relative two surface of the Ceramic insulator 2 are the of 0.1mm
One aluminium lamination 3 and thickness are 0.1mm the second aluminium lamination 4, and the Ceramic insulator 2 is by second aluminium lamination 4 and first aluminium lamination 3
Isolation；The apparent surface of second aluminium lamination 4 and the connection surface of Ceramic insulator 2 is connected with thickness with being also integrally formed and is
0.3mm layers of copper 6 forms ceramic copper-clad aluminium heat carrier；It can etch to form IGBT circuit boards in layers of copper 6.
The preferred embodiment of the disclosure is described in detail above in association with accompanying drawing, still, the disclosure is not limited to above-mentioned reality
The detail in mode is applied, in the range of the technology design of the disclosure, a variety of letters can be carried out to the technical scheme of the disclosure
Monotropic type, these simple variants belong to the protection domain of the disclosure.
It is further to note that each particular technique feature described in above-mentioned embodiment, in not lance
In the case of shield, it can be combined by any suitable means.In order to avoid unnecessary repetition, the disclosure to it is various can
The combination of energy no longer separately illustrates.
In addition, it can also be combined between a variety of embodiments of the disclosure, as long as it is without prejudice to originally
Disclosed thought, it should equally be considered as disclosure disclosure of that.
Claims (11)
1. a kind of heat abstractor, the heat abstractor includes heat carrier and heat radiator body (1), it is characterised in that the heat carrier
Aluminium heat carrier is covered for ceramics；One or more ceramics, which are combined with, on the heat radiator body (1) with being integrally formed covers aluminium heat carrier.
2. heat abstractor according to claim 1, it is characterised in that the heat radiator body (1) is aluminium silicon-carbon heat radiator body；
The aluminium silicon-carbon heat radiator body includes silicon carbide porous skeleton and is filled in the intraskeletal aluminium of the silicon carbide porous.
3. heat abstractor according to claim 1, it is characterised in that the ceramics, which cover aluminium heat carrier, includes Ceramic insulator
(2) and the first aluminium lamination (3) and the second aluminium lamination (4) that are arranged on relative two surface of the Ceramic insulator (2), and
The Ceramic insulator (2) is connected in the heat radiator body (1) with being integrally formed by first aluminium lamination (3)；The pottery
Porcelain insulating plate (2) isolates second aluminium lamination (4) with first aluminium lamination (3).
4. heat abstractor according to claim 3, it is characterised in that the heat radiator body (1) and first aluminium lamination (3)
The surface being connected is flat surface.
5. heat abstractor according to claim 3, it is characterised in that the Ceramic insulator (2) be alumina ceramic plate,
Reinforced alumina ceramic plate, al nitride ceramic board or silicon nitride ceramic plate；First aluminium lamination (3) and second aluminium lamination (4)
For aluminum layer and/or aluminium alloy layer.
6. heat abstractor according to claim 3, it is characterised in that the thickness of first aluminium lamination (3) be 0.02~
0.15mm, the thickness of the Ceramic insulator (2) is 0.25~1mm, and the thickness of second aluminium lamination (4) is 0.02~1.0mm.
7. heat abstractor according to claim 3, it is characterised in that second aluminium lamination (4) and Ceramic insulator (2)
The apparent surface of connection surface is connected with layers of copper (6) with being also integrally formed, and the thickness of the layers of copper (6) is 0.2~0.6mm.
8. heat abstractor according to claim 1, it is characterised in that be additionally provided with the heat radiator body (1) one or
Multiple thermal columns (5)；One end of the thermal column (5) is fixedly connected with heat radiator body (1), and the other end of thermal column (5) is certainly
By holding.
9. heat abstractor according to claim 8, it is characterised in that the thermal column (5) covers aluminium heat conduction with the ceramics
Body is separately positioned on relative two surface of the heat radiator body (1)；The thermal column (5) is selected from aluminium post, aluminium alloy column
At least one of copper post is covered with aluminium；The thermal column (5) is connected in the heat radiator body (1) with being integrally formed.
10. heat abstractor according to claim 1, it is characterised in that combined with being integrally formed on the heat radiator body (1)
When having multiple ceramics to cover aluminium heat carrier, different ceramics cover aluminium heat carrier and set at each interval.
11. a kind of IGBT modules, it is characterised in that the IGBT modules include any one in IGBT circuit boards and claim 1-10
Heat abstractor described in.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720927059.4U CN207097803U (en) | 2017-07-27 | 2017-07-27 | A kind of heat abstractor and its IGBT module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720927059.4U CN207097803U (en) | 2017-07-27 | 2017-07-27 | A kind of heat abstractor and its IGBT module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207097803U true CN207097803U (en) | 2018-03-13 |
Family
ID=61546706
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720927059.4U Active CN207097803U (en) | 2017-07-27 | 2017-07-27 | A kind of heat abstractor and its IGBT module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207097803U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112310029A (en) * | 2019-07-26 | 2021-02-02 | 株洲中车时代半导体有限公司 | Substrate and substrate integrated power semiconductor device and manufacturing method thereof |
| CN117637674A (en) * | 2024-01-03 | 2024-03-01 | 广东巨风半导体有限公司 | IGBT module and production method |
-
2017
- 2017-07-27 CN CN201720927059.4U patent/CN207097803U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112310029A (en) * | 2019-07-26 | 2021-02-02 | 株洲中车时代半导体有限公司 | Substrate and substrate integrated power semiconductor device and manufacturing method thereof |
| CN117637674A (en) * | 2024-01-03 | 2024-03-01 | 广东巨风半导体有限公司 | IGBT module and production method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108133915B (en) | Power module with built-in power device and double-sided heat dissipation function and manufacturing method thereof | |
| CN110622301A (en) | Power semiconductor device and method for manufacturing the same | |
| CN104365185B (en) | Printed circuit boards including conductive substrate, particularly for power electronics modules | |
| EP2447990B1 (en) | Base plate | |
| CN207097803U (en) | A kind of heat abstractor and its IGBT module | |
| CN105627122B (en) | It is a kind of directly using metal heat sink as the LED light source module of positive and negative electrode circuit | |
| CN108417546B (en) | Power electronic module | |
| CN107546200B (en) | A kind of heat dissipation element and preparation method thereof and IGBT modules | |
| CN108925065A (en) | Copper billet method for manufacturing circuit board is buried in one kind | |
| CN100385652C (en) | Semiconductor device | |
| CN102710102A (en) | Liquid-cooled insulated gate bipolar transistor (IGBT) converter and manufacturing method | |
| CN207097805U (en) | A kind of heat abstractor and IGBT module | |
| CN108093567A (en) | A kind of thickness copper method for manufacturing printed circuit board | |
| CN102163928A (en) | Special ultrahigh-power rectification power electronic device module for ultrasonic welding machine | |
| CN207818556U (en) | A kind of heat dissipation element and IGBT modules | |
| KR20150033829A (en) | IGBT module having circuit pattern fabricated using cold spray and its manufacturing method | |
| CN106604527A (en) | Electronic device aluminum substrate with high heat radiation performance | |
| CN109148411B (en) | Heat dissipation substrate and preparation method thereof | |
| CN211125690U (en) | Ceramic-based L ED support interconnected by copper columns | |
| CN105914283B (en) | Heat-radiating substrate, power module and the method for preparing heat-radiating substrate | |
| CN107611104A (en) | A kind of heat dissipation element and preparation method thereof and IGBT modules | |
| CN102811554A (en) | Base plate for high-power electronic device module and preparation method thereof | |
| CN206595257U (en) | A kind of two-side radiation power model | |
| CN208368274U (en) | Converter valve flash, ultrahigh power resistor | |
| JP2004087927A (en) | Ceramic substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |