CN207069287U - 一种dfb激光器外延片 - Google Patents
一种dfb激光器外延片 Download PDFInfo
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- CN207069287U CN207069287U CN201720777435.6U CN201720777435U CN207069287U CN 207069287 U CN207069287 U CN 207069287U CN 201720777435 U CN201720777435 U CN 201720777435U CN 207069287 U CN207069287 U CN 207069287U
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107069426A (zh) * | 2017-06-30 | 2017-08-18 | 苏州全磊光电有限公司 | 一种dfb激光器外延片及其制造方法 |
CN110535032A (zh) * | 2019-09-18 | 2019-12-03 | 全磊光电股份有限公司 | 一种高速工温dfb激光器及其制造方法 |
CN112636169A (zh) * | 2020-12-23 | 2021-04-09 | 全磊光电股份有限公司 | 一种dfb激光器外延片的制造方法 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107069426A (zh) * | 2017-06-30 | 2017-08-18 | 苏州全磊光电有限公司 | 一种dfb激光器外延片及其制造方法 |
CN110535032A (zh) * | 2019-09-18 | 2019-12-03 | 全磊光电股份有限公司 | 一种高速工温dfb激光器及其制造方法 |
CN110535032B (zh) * | 2019-09-18 | 2024-04-05 | 全磊光电股份有限公司 | 一种高速工温dfb激光器及其制造方法 |
CN112636169A (zh) * | 2020-12-23 | 2021-04-09 | 全磊光电股份有限公司 | 一种dfb激光器外延片的制造方法 |
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GR01 | Patent grant | ||
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EE01 | Entry into force of recordation of patent licensing contract | ||
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Assignee: EPIHOUSE OPTOELECTRONIC Co.,Ltd. Assignor: SUZHOU EPIHOUSE. CO.,LTD. Contract record no.: X2020110000021 Denomination of utility model: A DFB laser epitaxial wafer Granted publication date: 20180302 License type: Common License Record date: 20201118 |
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Effective date of registration: 20230404 Address after: 361000 1st, 2nd and 3rd floors, No. 567, tonglong 2nd Road, industrial zone, torch high tech Zone (Xiang'an), Xiamen, Fujian Patentee after: EPIHOUSE OPTOELECTRONIC Co.,Ltd. Address before: Room E1107, 388 Ruoshui Road, Suzhou Industrial Park, Jiangsu Province, 215000 Patentee before: SUZHOU EPIHOUSE. CO.,LTD. |