CN210379766U - 一种高速dfb激光器外延结构 - Google Patents
一种高速dfb激光器外延结构 Download PDFInfo
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- CN210379766U CN210379766U CN201921537387.9U CN201921537387U CN210379766U CN 210379766 U CN210379766 U CN 210379766U CN 201921537387 U CN201921537387 U CN 201921537387U CN 210379766 U CN210379766 U CN 210379766U
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- 230000007704 transition Effects 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 230000004888 barrier function Effects 0.000 claims abstract description 16
- 230000008859 change Effects 0.000 claims abstract description 7
- 230000000670 limiting effect Effects 0.000 claims description 9
- 238000004921 laser epitaxy Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 11
- 239000000463 material Substances 0.000 abstract description 8
- 230000007797 corrosion Effects 0.000 abstract description 6
- 238000005260 corrosion Methods 0.000 abstract description 6
- 230000002349 favourable effect Effects 0.000 abstract description 3
- 230000005012 migration Effects 0.000 abstract description 3
- 238000013508 migration Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 127
- 238000006243 chemical reaction Methods 0.000 description 11
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 3
- 230000006911 nucleation Effects 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 229910016909 AlxOy Inorganic materials 0.000 description 1
- 239000005922 Phosphane Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000000025 interference lithography Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 229910000064 phosphane Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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CN201921537387.9U CN210379766U (zh) | 2019-09-17 | 2019-09-17 | 一种高速dfb激光器外延结构 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110535031A (zh) * | 2019-09-17 | 2019-12-03 | 全磊光电股份有限公司 | 一种高速dfb激光器外延结构及其制造方法 |
CN113594858A (zh) * | 2021-08-05 | 2021-11-02 | 福建中科光芯光电科技有限公司 | 宽温度工作单片多波长高速dfb激光光源外延层结构、芯片及其制备方法 |
CN113745968A (zh) * | 2021-08-27 | 2021-12-03 | 因林光电科技(苏州)有限公司 | 一种半导体激光器及其制备方法 |
CN110535031B (zh) * | 2019-09-17 | 2024-05-31 | 全磊光电股份有限公司 | 一种高速dfb激光器外延结构及其制造方法 |
-
2019
- 2019-09-17 CN CN201921537387.9U patent/CN210379766U/zh not_active Withdrawn - After Issue
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110535031A (zh) * | 2019-09-17 | 2019-12-03 | 全磊光电股份有限公司 | 一种高速dfb激光器外延结构及其制造方法 |
CN110535031B (zh) * | 2019-09-17 | 2024-05-31 | 全磊光电股份有限公司 | 一种高速dfb激光器外延结构及其制造方法 |
CN113594858A (zh) * | 2021-08-05 | 2021-11-02 | 福建中科光芯光电科技有限公司 | 宽温度工作单片多波长高速dfb激光光源外延层结构、芯片及其制备方法 |
CN113745968A (zh) * | 2021-08-27 | 2021-12-03 | 因林光电科技(苏州)有限公司 | 一种半导体激光器及其制备方法 |
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CB03 | Change of inventor or designer information | ||
CB03 | Change of inventor or designer information |
Inventor after: Shan Zhifa Inventor after: Zhang Yong Inventor after: Chen Yanghua Inventor before: Shan Zhifa Inventor before: Zhang Yong Inventor before: Jiang Wei Inventor before: Chen Yanghua |
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AV01 | Patent right actively abandoned |
Granted publication date: 20200421 Effective date of abandoning: 20240531 |
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AV01 | Patent right actively abandoned |
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