CN206853735U - A kind of support for auxiliary substrate solvent thermal growth - Google Patents

A kind of support for auxiliary substrate solvent thermal growth Download PDF

Info

Publication number
CN206853735U
CN206853735U CN201720773753.5U CN201720773753U CN206853735U CN 206853735 U CN206853735 U CN 206853735U CN 201720773753 U CN201720773753 U CN 201720773753U CN 206853735 U CN206853735 U CN 206853735U
Authority
CN
China
Prior art keywords
neck
substrate
solvent thermal
base
thermal growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201720773753.5U
Other languages
Chinese (zh)
Inventor
沈新颖
朱路平
邴乃慈
王利军
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jianling Environmental Protection Technology Shanghai Co ltd
Original Assignee
Shanghai Polytechnic University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Polytechnic University filed Critical Shanghai Polytechnic University
Priority to CN201720773753.5U priority Critical patent/CN206853735U/en
Application granted granted Critical
Publication of CN206853735U publication Critical patent/CN206853735U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

The utility model discloses a kind of support for auxiliary substrate solvent thermal growth.It includes base, handle and neck;Handle and base are vertically arranged, and the down-set groove in upper surface of base, groove has several, and the two side of each groove is parallel to each other, and neck is set on two side, and the opening of neck is relative, angle a are formed between neck and horizontal plane, it is less than 180 degree more than 0 degree.When carrying out substrate solvent thermal growth using support of the present utility model, substrate need to be only placed in neck;Substrate is fixed in the neck of base, can effectively prevent the landing of substrate during reactor movement and solvent thermal reaction;Multiple necks are had on base, while carry out multiple substrate solvent thermal growths, greatly improve the preparation efficiency of substrate, have it is simple to operate, prepare the advantages that efficient.

Description

A kind of support for auxiliary substrate solvent thermal growth
Technical field
A kind of annex for auxiliary substrate solvent thermal growth is the utility model is related to, specifically, is related to a kind of with auxiliary Help the support of substrate solvent thermal growth.
Background technology
At present, oxide, sulfide, nitride etc. are longer than research method in substrate increasingly using solvent thermal reaction Hot topic, but without a kind of support for support substrate, or which results in can only once grow on a substrate, obtain It is low to grow complete substrate rate in blocks;And when carrying out solvent thermal growth reaction in multiple samples while as reactor, substrate Understand the movement because of reactor, the temperature change during solvent thermal reaction and mechanical shock and slide, cause substrate molten The thermally grown failure of agent or growth are incomplete.Therefore by technological means, while substrate grown is not influenceed, improve in one-pot Complete substrate rate in blocks is grown for this area technical problem in the urgent need to address.
Utility model content
For overcome the deficiencies in the prior art, the purpose of this utility model, which is to provide one kind, effectively to prevent substrate from sliding, Realize the multiple substrates of one-pot while carry out the support of solvent thermal growth reaction.
The technical solution of the utility model is specifically described as follows.
The utility model provides a kind of support for auxiliary substrate solvent thermal growth, and it includes base, handle and neck; Handle and base are vertically arranged, and the down-set groove in upper surface of base, groove has several, and the two side of each groove is mutual It is parallel, neck is set on two side, and the opening of neck is relative, angle a is formed between neck and horizontal plane, it is less than more than 0 degree 180 degree.
In the utility model, base is in cylindrical shape.
In the utility model, handle is bar-shaped.
In the utility model, the bottom of groove is rectangle.
In the utility model, the section of neck is analog-U shaped.
Compared to the prior art, the beneficial effects of the utility model are:
1st, have it is simple to operate, only substrate need to be placed in neck;
2nd, substrate is fixed on base, can effectively prevent the growth course in substrate such as oxide, sulfide, nitride In landing;
3rd, multiple samples carry out solvent thermal growth reaction simultaneously, can greatly improve in raising one-pot and grow complete substrate The advantages that rate in blocks.
Brief description of the drawings
Fig. 1 is 3 dimensional drawing of the present utility model.
Fig. 2 is top view of the present utility model.
Fig. 3 is front view of the present utility model.
Fig. 4 is side view of the present utility model.
Fig. 5 is structural representation of the present utility model.
Fig. 6 is the A-A profiles of structure of the present utility model.
Fig. 7 is the B-B profiles of structure of the present utility model.
Label in figure:1- bases, 2- handles, 3- necks, 4- substrates.
Embodiment
The utility model is described further below by accompanying drawing specific embodiment.
Embodiment 1
Fig. 13 dimensional drawings of the present utility model, Fig. 2, Fig. 3, Fig. 4 be the top view of the utility model, front view and Side view, Fig. 5 are the structural representation of the utility model, and Fig. 6 is the A-A profiles of Fig. 5 structure, and Fig. 7 is Fig. 5 structure B-B profiles.With reference to above-mentioned accompanying drawing, the utility model provides a kind of support for auxiliary substrate solvent thermal growth, and it includes Base 1, handle 2 and neck 3;Base 1 is polytetrafluoroethylene (PTFE) material;Handle 2 is bar-shaped, and itself and the soldering of base 1 are mutually perpendicular to set Put, Gu it is integral.The down-set some grooves in upper surface of base 1, the bottom surface of groove are rectangle, the two side of each groove It is parallel to each other, neck 3 is set on two side, the opening of neck 3 is relative, and angle a is formed between neck 3 and horizontal plane, and it is more than 0 Degree is less than 180 degree.
As shown in fig. 7, when carrying out solvent thermal growth experiment, substrate 4 is placed in groove, and neck 3 is engaged, and then will Support is put into polytetrafluoroethyllining lining, you can is reacted.Substrate 4 is fixed on base 1 by neck 3, can effectively be prevented The landing in substrate 4 in growth course such as block compound, sulfide, nitride;Its structure causes multiple samples same simultaneously Shi Jinhang solvent thermal growths react, and greatly improve the rate in blocks for improving and complete substrate 4 being grown in one-pot.

Claims (5)

1. a kind of support for auxiliary substrate solvent thermal growth, it is characterised in that it includes base, handle and neck;Handle It is vertically arranged with base, the down-set groove in upper surface of base, groove there are several, and the two side of each groove is mutually flat OK, neck is set on two side, and the opening of neck is relative, and angle a is formed between neck and horizontal plane, and it is more than 0 degree and is less than 180 Degree.
2. the support according to claim 1 for auxiliary substrate solvent thermal growth, it is characterised in that base is in cylinder Shape.
3. the support according to claim 1 for auxiliary substrate solvent thermal growth, it is characterised in that handle is bar-shaped.
4. the support according to claim 1 for auxiliary substrate solvent thermal growth, it is characterised in that the bottom of groove is in Rectangle.
5. the support according to claim 1 for auxiliary substrate solvent thermal growth, it is characterised in that the section of neck is It is analog-U shaped.
CN201720773753.5U 2017-06-29 2017-06-29 A kind of support for auxiliary substrate solvent thermal growth Active CN206853735U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201720773753.5U CN206853735U (en) 2017-06-29 2017-06-29 A kind of support for auxiliary substrate solvent thermal growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201720773753.5U CN206853735U (en) 2017-06-29 2017-06-29 A kind of support for auxiliary substrate solvent thermal growth

Publications (1)

Publication Number Publication Date
CN206853735U true CN206853735U (en) 2018-01-09

Family

ID=60828762

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201720773753.5U Active CN206853735U (en) 2017-06-29 2017-06-29 A kind of support for auxiliary substrate solvent thermal growth

Country Status (1)

Country Link
CN (1) CN206853735U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110492093A (en) * 2019-08-26 2019-11-22 燕山大学 The preparation method of self-supporting material

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110492093A (en) * 2019-08-26 2019-11-22 燕山大学 The preparation method of self-supporting material

Similar Documents

Publication Publication Date Title
CN102560630A (en) Thermal field capable of allowing synchronous growth of a plurality of crystals with edge-defined film-fed crystal growth technique and method thereof
CN102127803A (en) Growth method of rectangular specially-shaped sapphire crystal
CN206853735U (en) A kind of support for auxiliary substrate solvent thermal growth
CN204421610U (en) Split type water-cooling crucible
CN203947179U (en) Epitaxy chip carrying disk
CN205329210U (en) Polysilicon ingoting furnace
CN203187780U (en) Polycrystalline silicon ingot furnace
CN202940219U (en) Quartz boat
CN104817260B (en) A kind of edge bonding method of vacuum glass and the production method of vacuum glass
CN202452829U (en) Industrial quartz glass crucible with cover
CN201933196U (en) Graphite crucible for single crystal furnace
CN202968755U (en) Quartz ceramic crucible
CN205803591U (en) A kind of diamond-coated tools grower
CN207079301U (en) Polycrystalline silicon ingot casting and ingot single crystal crucible
CN202594953U (en) Cooling device for forming optical glass
CN205491618U (en) Radiating fin
CN202022993U (en) Heating device of polysilicon ingot furnace with split-control top
CN206502890U (en) A kind of Czochralski method mono-crystal furnace is supported with two plane type guide shell
CN203593621U (en) Graphite barrel for preparing graphene
CN203367345U (en) Graphite base
CN205219520U (en) Aquogel mould
CN203866401U (en) Non-uniform p-BN (pyrolytic boron nitride) crucible applied to mono-crystal growth by VGF (vertical gradient freeze) or VB (vertical bridgman) method
CN205473814U (en) Portable torticollis cell culture device
CN203267426U (en) Cooling plate for printed plate
CN214218742U (en) PCR tube

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20210129

Address after: 202161 no.4925 Chenzhao Road, Xianghua Town, Chongming District, Shanghai (Shanghai Yongguan Economic Development Zone)

Patentee after: Shanghai Iguazu Environmental Protection Technology Service Center

Address before: 201209 No. 2360 Golden Sea Road, Shanghai, Pudong New Area

Patentee before: SHANGHAI SECOND POLYTECHNIC University

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20210220

Address after: Room 208, building 6, 199 Tongji Branch Road, Baoshan District, Shanghai, 200940

Patentee after: SHANGHAI JIANLING ENERGY SAVING AND ENVIRONMENTAL PROTECTION TECHNOLOGY Co.,Ltd.

Address before: 202161 no.4925 Chenzhao Road, Xianghua Town, Chongming District, Shanghai (Shanghai Yongguan Economic Development Zone)

Patentee before: Shanghai Iguazu Environmental Protection Technology Service Center

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20211213

Address after: 201900 Building 1, No. 2, Tongji Road, Baoshan District, Shanghai

Patentee after: Jianling environmental protection technology (Shanghai) Co.,Ltd.

Address before: Room 208, building 6, 199 Tongji Branch Road, Baoshan District, Shanghai, 200940

Patentee before: SHANGHAI JIANLING ENERGY SAVING AND ENVIRONMENTAL PROTECTION TECHNOLOGY Co.,Ltd.