CN203593621U - Graphite barrel for preparing graphene - Google Patents
Graphite barrel for preparing graphene Download PDFInfo
- Publication number
- CN203593621U CN203593621U CN201320663584.1U CN201320663584U CN203593621U CN 203593621 U CN203593621 U CN 203593621U CN 201320663584 U CN201320663584 U CN 201320663584U CN 203593621 U CN203593621 U CN 203593621U
- Authority
- CN
- China
- Prior art keywords
- graphene
- graphite
- barrel
- silicon carbide
- graphite barrel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 77
- 229910002804 graphite Inorganic materials 0.000 title claims abstract description 41
- 239000010439 graphite Substances 0.000 title claims abstract description 41
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 36
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 3
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 17
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 14
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 14
- 239000000463 material Substances 0.000 abstract description 10
- 238000002360 preparation method Methods 0.000 abstract description 8
- 238000000137 annealing Methods 0.000 abstract description 6
- 238000010438 heat treatment Methods 0.000 abstract description 6
- 238000000034 method Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 4
- 150000001721 carbon Chemical group 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 229910052702 rhenium Inorganic materials 0.000 description 2
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000005355 Hall effect Effects 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 230000002687 intercalation Effects 0.000 description 1
- 238000009830 intercalation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- Carbon And Carbon Compounds (AREA)
Abstract
The utility model belongs to the technical field of new material processing, and particularly relates to a graphite barrel for preparing graphene on a silicon carbide substrate through high-temperature annealing. The graphite barrel can be used as a container for the silicon carbide substrate, works with a special heating manner to prepare the graphene, and comprises a barrel body with an opening in the upper end, wherein a groove is formed in the upper surface of the bottom of the barrel body; positioning blocks are arranged on the side wall of the upper part of the graphite barrel; a heat reflecting screen is arranged on the positioning blocks. Through the adoption of the graphite barrel with the structure, the silicon carbide substrate can be placed in the groove to be fixed by the graphite barrel; the graphite barrel is heated by an external heat source; the arranged heat reflecting screen can ensure no heat loss, so that the temperature in the graphite container is increased; a temperature field obtained by the heat reflecting screen can be uniform to facilitate the preparation of the graphene; the graphite barrel is simple in the whole structure, works with the corresponding heating device, and can use the high-temperature annealing technology to prepare the graphene on the silicon carbide substrate, so that the purity of the graphene is improved, the preparing cost is reduced, and the preparing efficiency is improved.
Description
Technical field
The utility model belongs to novel material processing technique field, is specifically related to a kind of graphite bucket that Graphene uses of preparing, and particularly a kind of high temperature annealing that utilizes is prepared the graphite bucket that Graphene uses in silicon carbide substrates.
Background technology
Graphene is a kind of carbonaceous novel material by the tightly packed one-tenth of carbon atom, there is individual layer bi-dimensional cellular shape (only including hexagonal primitive unit cell) crystalline network, only has the thickness (～0.35nm) of an atom, its structural stability is very high, and connection between each carbon atom is quite pliable and tough, in the time being subject to external force and attacking, will distorted deformation, make carbon atom needn't rearrange to adapt to external force, thereby guaranteed the stability of self structure.
As simple substance, Graphene has the performance of many excellences, the characteristic of its maximum be exactly the movement velocity of its electronics be one of three percentages of the light velocity, be that in current known materials, electronic conduction speed is the fastest, be the twice of indium antimonide material (the at present known material with high mobility).Although Graphene only has the thickness of an atom, intensity is very high, and maximum intensity reaches 130GPa, is more than 100 times of steel.Graphene also has a series of special propertys such as half-integer quantum hall effect under room temperature, tunnel effect, permanent electric conductivity.
At present successful development goes out the multiple method of preparing Graphene, as: adhesive tape micromechanics stripping method, chemical reagent intercalation peel off under expansion graphite method, transiting metal surface high temperature, infiltrate carbon atom then fast cooling segregation go out chemical vapour deposition (CVD) method, the graphite oxide reduction method etc. of Graphene.Graphene prepared by first two method all needs to be transferred in insulating substrate, the third method utilize in the metallic surface of copper or nickel chemical Vapor deposition process can prepare large-area graphene film and quality pretty good, but the controllability of the graphene film thickness that this method obtains is poor.Although graphite oxide reduction method can obtain larger area graphene film, because the Graphene in preparation process has been introduced a large amount of defects, and monolithic Graphene size is less, causes the graphene film that obtains discontinuous, and its electroconductibility also has much room for improvement.In order to overcome the deficiency of above-mentioned preparation technology's existence, need to research and develop a kind of preparation method and equipment of new Graphene.
Summary of the invention
The weak point existing for prior art Graphene preparation technology, contriver of the present utility model provides a kind of graphite bucket using while utilizing high temperature annealing to prepare Graphene in silicon carbide substrates, this graphite bucket can be used as the container of silicon carbide substrates, coordinate special type of heating to prepare Graphene, this graphite bucket comprises the staving of upper end open, staving upper base surface is provided with groove, in graphite bucket upper portion side wall, is provided with preset pieces, is placed with heat reflection screen on preset pieces; Adopt the graphite bucket of this structure silicon carbide substrates can be placed on to the effect of playing stationary substrate in groove, utilize external heat source to heat, the heat reflection screen arranging can guarantee that heat does not does not scatter and disappear, and the temperature field that utilizes heat reflection screen to obtain is more even, improve the temperature in crystal vessel, be convenient to the preparation of Graphene, whole graphite barrel structure is simple, coordinate with corresponding heating unit, can utilize high temperature annealing in silicon carbide substrates, to prepare Graphene, improve the purity of Graphene, saved production cost, improved production efficiency.
Concrete technical scheme of the present utility model is:
Prepare the graphite bucket that Graphene uses, this graphite bucket comprises the staving of upper end open, and staving upper base surface is provided with groove, in graphite bucket upper portion side wall, is provided with at least two preset piecess, is placed with heat reflection screen on preset pieces.
Adopt the graphite bucket of this structure, the groove of staving upper base surface setting can be fixed on silicon carbide substrates and in groove, guarantee can not produce in whole production process displacement, can utilize afterwards external heat source to heat, utilize the thermal conductivity of graphite to heat silicon carbide substrates; In graphite bucket upper portion side wall, be provided with at least two preset piecess, on preset pieces, can place heat reflection screen, like this in heat-processed, the heat reflection screen arranging can return the reflect heat of distribution staving bottom, guarantee that heat does not does not scatter and disappear, improve the temperature in crystal vessel, and the temperature field that utilizes heat reflection screen to obtain is more even, is convenient to the preparation of Graphene;
In order to reach better effect, staving upper base surface is provided with tantalum carbide coating, utilizes this figure layer can prevent that SiC substrate lower surface from high temperature reacting with graphite;
The heat reflection screen adopting, its material is the refractory metal materials such as rhenium, tungsten, tantalum, generally be prepared into thin plate according to the shape of graphite bucket with size, and the surface that guarantees thin plate is minute surface, can play like this effect of good reflecting heat, thereby improve the efficiency of heating, and the temperature field that utilizes heat reflection screen to obtain is more even.
In sum, adopt the graphite bucket of this structure, silicon carbide substrates can be placed on to the effect of playing stationary substrate in groove, utilize external heat source to heat, the heat reflection screen arranging can guarantee that heat does not does not scatter and disappear, improve the temperature in crystal vessel, and the temperature field that utilizes heat reflection screen to obtain is more even, be convenient to the preparation of Graphene, whole graphite barrel structure is simple, coordinates with corresponding heating unit, can utilize high temperature annealing in silicon carbide substrates, to prepare Graphene, improve the purity of Graphene, saved production cost, improved production efficiency.
Accompanying drawing explanation
Fig. 1 is the structural representation of graphite bucket described in the utility model;
Fig. 2 is the vertical view of graphite bucket described in the utility model;
Fig. 3 is the sectional view of A-A in Fig. 2;
In figure, 1 is staving, and 2 is heat reflection screen, and 3 is preset pieces, and 4 is groove.
Embodiment
The graphite bucket using while preparing Graphene, this graphite bucket comprises the staving 1 of upper end open, staving 1 upper base surface is provided with groove 4, in graphite bucket upper portion side wall, is provided with at least two preset piecess 3, is placed with heat reflection screen 4 on preset pieces 3.
Staving upper base surface is provided with tantalum carbide coating;
The heat reflection screen adopting, its material is the refractory metal materials such as rhenium, tungsten, tantalum, is generally prepared into thin plate according to the shape of graphite bucket and size, and guarantees that the surface of thin plate is minute surface.
Claims (3)
1. the graphite bucket using while preparing Graphene, it is characterized in that: the staving (1) that comprises upper end open, staving (1) upper base surface is provided with groove (4), is provided with at least two preset piecess (3) in graphite bucket upper portion side wall, is placed with heat reflection screen (4) on preset pieces (3).
2. graphite bucket according to claim 1, is characterized in that: described staving upper base surface is provided with tantalum carbide coating.
3. graphite bucket according to claim 1, is characterized in that: described heat reflection screen surfaces is minute surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320663584.1U CN203593621U (en) | 2013-10-25 | 2013-10-25 | Graphite barrel for preparing graphene |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320663584.1U CN203593621U (en) | 2013-10-25 | 2013-10-25 | Graphite barrel for preparing graphene |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203593621U true CN203593621U (en) | 2014-05-14 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320663584.1U Expired - Lifetime CN203593621U (en) | 2013-10-25 | 2013-10-25 | Graphite barrel for preparing graphene |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203593621U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108483438A (en) * | 2018-05-30 | 2018-09-04 | 中钢集团新型材料（浙江）有限公司 | A kind of roasting steel drum for isostatic pressing formed graphite |
-
2013
- 2013-10-25 CN CN201320663584.1U patent/CN203593621U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108483438A (en) * | 2018-05-30 | 2018-09-04 | 中钢集团新型材料（浙江）有限公司 | A kind of roasting steel drum for isostatic pressing formed graphite |
| CN108483438B (en) * | 2018-05-30 | 2023-06-09 | 赛迈科先进材料股份有限公司 | Roasting steel drum for isostatic pressing graphite |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Graphite barrel for preparing graphene Effective date of registration: 20150618 Granted publication date: 20140514 Pledgee: China Co. truction Bank Corp Ji'nan hi tech sub branch Pledgor: SICC MATERIALS Co.,Ltd. Registration number: 2015990000494 |
|
| PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Graphite barrel for preparing graphene Effective date of registration: 20160729 Granted publication date: 20140514 Pledgee: China Co. truction Bank Corp Ji'nan hi tech sub branch Pledgor: SICC MATERIALS Co.,Ltd. Registration number: 2016990000657 |
|
| PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20160726 Granted publication date: 20140514 Pledgee: China Co. truction Bank Corp Ji'nan hi tech sub branch Pledgor: SICC MATERIALS Co.,Ltd. Registration number: 2015990000494 |
|
| PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20170615 Granted publication date: 20140514 Pledgee: China Co. truction Bank Corp Ji'nan hi tech sub branch Pledgor: SICC MATERIALS Co.,Ltd. Registration number: 2016990000657 |
|
| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Graphite barrel for preparing graphene Effective date of registration: 20170616 Granted publication date: 20140514 Pledgee: China Co. truction Bank Corp Ji'nan hi tech sub branch Pledgor: SICC MATERIALS Co.,Ltd. Registration number: 2017370000066 |
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| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20190626 Granted publication date: 20140514 Pledgee: China Co. truction Bank Corp Ji'nan hi tech sub branch Pledgor: SICC MATERIALS Co.,Ltd. Registration number: 2017370000066 |
|
| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Graphite barrel for preparing graphene Effective date of registration: 20190627 Granted publication date: 20140514 Pledgee: China Co. truction Bank Corp Ji'nan hi tech sub branch Pledgor: SICC MATERIALS Co.,Ltd. Registration number: 2019370000145 |
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| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20191216 Granted publication date: 20140514 Pledgee: China Co. truction Bank Corp Ji'nan hi tech sub branch Pledgor: SICC MATERIALS Co.,Ltd. Registration number: 2019370000145 |
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20191231 Address after: No. 99, South Tianyue Road, Huaiyin District, Jinan City, Shandong Province Patentee after: SICC Co.,Ltd. Address before: The middle road in Huaiyin District of Ji'nan city of Shandong Province, No. 1929 250101 Patentee before: SICC MATERIALS Co.,Ltd. |
|
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: No.99, Tianyue South Road, Huaiyin District, Jinan City, Shandong Province Patentee after: Shandong Tianyue advanced technology Co.,Ltd. Address before: No.99, Tianyue South Road, Huaiyin District, Jinan City, Shandong Province Patentee before: SICC Co.,Ltd. |
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| CX01 | Expiry of patent term |
Granted publication date: 20140514 |
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| CX01 | Expiry of patent term |