CN103509987A - Metal alloy heat conducting material with low melting point and preparation method thereof - Google Patents
Metal alloy heat conducting material with low melting point and preparation method thereof Download PDFInfo
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- CN103509987A CN103509987A CN201310323754.6A CN201310323754A CN103509987A CN 103509987 A CN103509987 A CN 103509987A CN 201310323754 A CN201310323754 A CN 201310323754A CN 103509987 A CN103509987 A CN 103509987A
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Abstract
The invention discloses a metal alloy heat conducting material with low melting point and a preparation method thereof. The material comprises the following components by weight: 50-56.5% of In, 11.0-16.5% of Sn, 31-37% of Bi and 0-0.5% of Zn. The preparation method comprises the following steps: 1) mixing: evenly mixing In, Sn, Bi and Zn powders according the proportion; 2) adding the powder into a vacuum furnace, vacuumizing the furnace to pressure of 0.1-1 Torr, then heating the furnace to 600 DEG C and maintaining at 600 DEG C for 1 h; and 3) cooling: finally turning off the heating power supply and naturally cooling to room temperature to obtain the metal alloy heat conducting material with low melting point. The heat conducting material provided by the invention has the characteristics of low melting point, good heat conducting efficiency and low cost.
Description
Technical field
The present invention relates to a kind of alloy material and preparation method thereof, be specifically related to a kind of low-melting point metal alloy thermally conductive material and preparation method thereof.
Background technology
At present, microelectronics develops rapidly electronic chip overall power density is significantly increased, and heat flow density also increases thereupon.Heat radiation quality can badly influence system stability and hardware longevity.Based on air-cooled, the traditional heat-dissipating technology of water-cooled and heat pipe cannot meet the booming needs of high performance chips.Comparatively novel heat dissipation technology, microchannel for example, thermoelectric refrigeration and phase transformation etc., improved radiating efficiency to a certain extent.But along with high power density device large-scale application, these heat dissipation technologys are the convergence limit day by day also.Chip technology has proposed unprecedented active demand to high-performance heat dissipating method, and make excessive heat flow density chip cooling is the research field of Showed Very Brisk in the world always.Chip is all to connect chip surface and scatterer module carries out dissipation of heat by heat conductive silica gel under many circumstances.Making the air that the heating element such as superior scatterer and chip contacts between ，Er gap, unavoidable Dou You space is again hot poor conductor.The effect of heat conductive silica gel is to utilize its mobility to fill gap between thermal source and spreader surface, makes them can more fully contact to reach the object of accelerating heat transfer.But, due to silica gel in air long-term place easily aging, and its extremely low thermal conductivity heat radiation bottleneck that is whole system.
Summary of the invention
For the deficiencies in the prior art, first object of the present invention is to be to provide a kind of low-melting point metal alloy thermally conductive material, and this thermally conductive material has the advantages that fusing point is low, heat transfer efficiency good and cost is low.
Second object of the present invention is for a kind of preparation method of low-melting point metal alloy thermally conductive material is provided.
Realizing first object of the present invention can be by taking following technical scheme to reach:
A thermally conductive material, is characterized in that it is prepared from by following component by mass percentage:
Preferably, the fusing point of described low-melting point metal alloy thermally conductive material is 57-63 degree Celsius.
Preferably, described low-melting point metal alloy thermally conductive material is prepared from by following component by mass percentage:
Preferably, described low-melting point metal alloy thermally conductive material is prepared from by following component by mass percentage:
Preferably, described low-melting point metal alloy thermally conductive material is prepared from by following component by mass percentage:
Preferably, described low-melting point metal alloy thermally conductive material is prepared from by following component by mass percentage:
Preferably, described low-melting point metal alloy thermally conductive material is prepared from by following component by mass percentage:
Realizing second object of the present invention can be by taking following technical scheme to reach:
A preparation method for low-melting point metal alloy thermally conductive material, it comprises following processing step successively:
1) mix: choose the powder of In, Sn, Bi, Zn, by the formula rate of the present invention's the first object, mix;
2) vacuum furnace heating: the powder after mixing is contained in crucible, then put into vacuum furnace, process furnace is evacuated down to the air pressure of 0.1-1Torr; Then process furnace is warmed up to 600 degrees Celsius; Keep afterwards 600 degrees Celsius 1 hour;
3) cooling: finally to close heating power supply, make it naturally cool to room temperature, obtain low-melting point metal alloy thermally conductive material.
Preferably, in step 2) in, from the temperature-rise period of room temperature to 600 degree Celsius, be slow heat-processed, 1 hour consuming time.
Beneficial effect of the present invention is:
1, the fusing point of alloy of the present invention is 57-63 degree Celsius.Therefore, this alloy is solid-state at normal temperatures.For convenience of using, can be rolled into sheet.As by between this alloys adhesion and computer processor and radiator fan, 70 degrees Celsius of working temperatures (> conventionally) lower alloy will melt as liquid state, so we are called liquid alloy.
2, alloy of the present invention has higher thermal conductivity in liquid situation.Through measuring, when temperature is 80 degrees Celsius, its thermal conductivity is 60-85W/mK.Compare with the thermal conductivity 1-5W/mK of common heat conductive silica gel, performance has had the raising of decades of times.
3, formula of the present invention be applicant by for a long time to Phase Diagram of Materials analysis and preparation grope just finally obtain, adopt relevant heat conduction and the thermal stability of alloy material of this formula very excellent, by controlling cooling temperature, can be prepared into liquid state, paste and sheet, working temperature can be reduced to 60 ℃ of left and right.This product not only can be for high-performance server, desktop computer, notebook, the chip heat pipe reason of industrial computer and communication base station, and at advanced energy field (industrial exhaust heat utilization, solar electrical energy generation, focused light battery is cooling, fuel cell etc.), aviation thermal control field, battery is cooling, field of photoelectric devices (as projector, power electronics devices etc.), LED lighting field, micro-nano electronic mechanical system, many essential domains such as biochip and electromobile are being played the part of indispensable role.Consider the cloud computing technology in the ascendant demand to high-end heat radiation, this product can also be expanded out more wide Application Areas.）
Embodiment
Below, in conjunction with embodiment, the present invention is described further:
Percentage % in following component is weight accounting rate.
Embodiment 1:
A thermally conductive material, is characterized in that it is prepared from by following component by mass percentage: In (indium) 50%; Sn (tin) 16.0%; Bi (bismuth) 34%; Zn (zinc) 0%.The fusing point of this alloy material is 57 degrees Celsius.
A preparation method for low-melting point metal alloy thermally conductive material, it comprises following processing step successively:
1) mix: choose the powder of In, Sn, Bi, Zn, by above-mentioned formula rate, mix;
2) vacuum furnace heating: the powder after mixing is contained in crucible, then put into vacuum furnace, process furnace is evacuated down to the air pressure of 0.1-1Torr; Then process furnace being warmed up to 600 degrees Celsius, is slow heat-processed from the temperature-rise period of room temperature to 600 degree Celsius, 1 hour consuming time; Keep afterwards 600 degrees Celsius 1 hour;
3) cooling: finally close heating power supply, make it naturally cool to room temperature, be 2 hours cooling time, obtains low-melting point metal alloy thermally conductive material.
Embodiment 2:
The feature of the present embodiment is: a kind of low-melting point metal alloy thermally conductive material, is characterized in that it is prepared from by following component by mass percentage: In (indium) 553%; Sn (tin) 13.5%; Bi (bismuth) 33.3%; Zn (zinc) 0.2%.The fusing point of this alloy material is 60.5 degrees Celsius.Other are identical with specific embodiment 1.
Embodiment 3:
The feature of the present embodiment is: a kind of low-melting point metal alloy thermally conductive material, is characterized in that it is prepared from by following component by mass percentage: In (indium) 56.5%; Sn (tin) 12%; Bi (bismuth) 31%; Zn (zinc) 0.5%.The fusing point of this alloy material is 63 degrees Celsius.Other are identical with specific embodiment 1.
Temperature test: 1, the test macro described in employing table 1 carries out temperature test.
Table 1 test system configurations table
2, at the surface-coated silica gel of the prior art of the CPU of desktop computer, carry out temperature test.Surface at the CPU of desktop computer arranges the low-melting point metal alloy thermally conductive material in embodiment 1-3 of the present invention, carries out temperature test, and test result is in Table 2.
Table 2CPU probe temperature contrast table
As can be seen from Table 2, adopt the alloy thermally conductive material of the embodiment of the present invention, during operation IntelBurn Test, the peak temperature of CPU has lowered more than 15 ℃.
3, at the surface-coated silica gel of the prior art of the video card of desktop computer, carry out temperature test.Surface at the video card of desktop computer arranges the low-melting point metal alloy thermally conductive material in embodiment of the present invention, carries out temperature test, and test result is in Table 3.
Table 3 display card test temperature contrast table
As can be seen from Table 3, adopt the alloy thermally conductive material of the embodiment of the present invention, during operation FurMark, the temperature of video card has lowered more than 7 ℃.
For a person skilled in the art, can make other various corresponding changes and distortion according to technical scheme described above and design, and these all changes and distortion all should belong to the protection domain of the claims in the present invention within.
Claims (9)
1. a low-melting point metal alloy thermally conductive material, is characterized in that it is prepared from by following component by mass percentage:
In 50-56.5% ;
Sn 11.0-16.5% ;
Bi 31-37% ;
Zn 0-0.5% 。
2. low-melting point metal alloy thermally conductive material according to claim 1, is characterized in that: the fusing point of described low-melting point metal alloy thermally conductive material is 57-63 degree Celsius.
3. low-melting point metal alloy thermally conductive material according to claim 1 and 2, is characterized in that: by following component by mass percentage, be prepared from:
In 50-56.5% ;
Sn 11.0-16.5% ;
Bi 31-37% ;
Zn 0.01-0.5% 。
4. low-melting point metal alloy thermally conductive material according to claim 3, is characterized in that: by following component by mass percentage, be prepared from:
In 50.5-56% ;
Sn 11.25-16.2% ;
Bi 32.7-34.3% ;
Zn 0.05-0.3% 。
5. low-melting point metal alloy thermally conductive material according to claim 4, is characterized in that: by following component by mass percentage, be prepared from:
In 50.5%;
Sn 16.2% ;
Bi 33% ;
Zn 0.3% 。
6. low-melting point metal alloy thermally conductive material according to claim 4, is characterized in that: by following component by mass percentage, be prepared from:
In 56%;
Sn 11.25%;
Bi 32.7%;
Zn 0.05%。
7. low-melting point metal alloy thermally conductive material according to claim 4, is characterized in that: by following component by mass percentage, be prepared from:
In 52% ;
Sn 13.5%;
Bi 34.3%;
Zn 0.2%。
8. a preparation method for low-melting point metal alloy thermally conductive material, is characterized in that comprising successively following processing step:
1) mix: choose the powder of In, Sn, Bi, Zn, by the formula rate described in any one in claim 1-7, mix;
2) vacuum furnace heating: the powder after mixing is contained in crucible, then put into vacuum furnace, process furnace is evacuated down to the air pressure of 0.1-1 Torr; Then process furnace is warmed up to 600 degrees Celsius; Keep afterwards 600 degrees Celsius 1 hour;
3) cooling: finally to close heating power supply, make it naturally cool to room temperature, obtain low-melting point metal alloy thermally conductive material.
9. a preparation method for low-melting point metal alloy thermally conductive material, is characterized in that: in step 2) in, from the temperature-rise period of room temperature to 600 degree Celsius, be slow heat-processed, 1 hour consuming time.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104213011A (en) * | 2014-09-04 | 2014-12-17 | 楚盛 | Long-service life and low-melting point metal alloy heat conducting material and preparation method thereof |
| CN104263994A (en) * | 2014-10-20 | 2015-01-07 | 湘潭大学 | Graphene alloy composite thermal conductive material and preparation method thereof |
| CN105925870A (en) * | 2016-05-04 | 2016-09-07 | 无锡市嘉邦电力管道厂 | Metal alloy heat conduction material and preparation method thereof |
| CN109055844A (en) * | 2018-08-20 | 2018-12-21 | 黄河科技学院 | A kind of long-life low-melting point metal alloy Heat Conduction Material and preparation method thereof |
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| CN101348875A (en) * | 2008-06-04 | 2009-01-21 | 厦门市及时雨焊料有限公司 | Tin, bismuth and copper type low temperature lead-free solder alloy |
| CN101420835A (en) * | 2007-10-26 | 2009-04-29 | 财团法人工业技术研究院 | Low melting point alloy thermal interface material |
| US20120153216A1 (en) * | 2010-12-21 | 2012-06-21 | Matthew Wrosch | High Transverse Thermal Conductivity Fiber Reinforced Polymeric Composites |
| CN102620534A (en) * | 2012-04-16 | 2012-08-01 | 武汉理工大学 | Low melting point alloy phase change heat storage device applied to solar dryer |
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Patent Citations (5)
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| CN1861824A (en) * | 2006-06-14 | 2006-11-15 | 四川省有色冶金研究院 | Non-pollution lower melting point alloy |
| CN101420835A (en) * | 2007-10-26 | 2009-04-29 | 财团法人工业技术研究院 | Low melting point alloy thermal interface material |
| CN101348875A (en) * | 2008-06-04 | 2009-01-21 | 厦门市及时雨焊料有限公司 | Tin, bismuth and copper type low temperature lead-free solder alloy |
| US20120153216A1 (en) * | 2010-12-21 | 2012-06-21 | Matthew Wrosch | High Transverse Thermal Conductivity Fiber Reinforced Polymeric Composites |
| CN102620534A (en) * | 2012-04-16 | 2012-08-01 | 武汉理工大学 | Low melting point alloy phase change heat storage device applied to solar dryer |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104213011A (en) * | 2014-09-04 | 2014-12-17 | 楚盛 | Long-service life and low-melting point metal alloy heat conducting material and preparation method thereof |
| CN104263994A (en) * | 2014-10-20 | 2015-01-07 | 湘潭大学 | Graphene alloy composite thermal conductive material and preparation method thereof |
| CN105925870A (en) * | 2016-05-04 | 2016-09-07 | 无锡市嘉邦电力管道厂 | Metal alloy heat conduction material and preparation method thereof |
| CN109055844A (en) * | 2018-08-20 | 2018-12-21 | 黄河科技学院 | A kind of long-life low-melting point metal alloy Heat Conduction Material and preparation method thereof |
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