CN206828677U - Single crystal growing furnace charging silicon rod - Google Patents
Single crystal growing furnace charging silicon rod Download PDFInfo
- Publication number
- CN206828677U CN206828677U CN201720596791.8U CN201720596791U CN206828677U CN 206828677 U CN206828677 U CN 206828677U CN 201720596791 U CN201720596791 U CN 201720596791U CN 206828677 U CN206828677 U CN 206828677U
- Authority
- CN
- China
- Prior art keywords
- silicon rod
- single crystal
- crystal growing
- growing furnace
- furnace charging
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
A kind of single crystal growing furnace charging silicon rod, including silicon rod body are the utility model is related to, one end of described silicon rod body has fixture gripping section；Described fixture clamping section surface is provided with multiple pits；The center of described pit is in the same horizontal line.For the utility model by setting pit, fixture can have more preferable grasp force in silicon rod end, so as to more preferably more stable feed intake, and improve production efficiency.
Description
Technical field
A kind of silicon rod is the utility model is related to, especially a kind of single crystal growing furnace charging silicon rod.
Background technology
Single crystal growing furnace is the crystal pulling apparatus for producing monocrystalline silicon needed for solar cell.In an inert atmosphere, silica crucible
After interior filling silicon raw material, being heated to high temperature melts silicon material, by tension force between the rotation of seed crystal and liquid upwards lifting come
Manufacture monocrystalline.There is the secondary charging that part producer uses single crystal growing furnace at present, but because secondary charging device is prepared using quartz more,
Fragile during use, service life is short, and how high, the charge and discharge operations inconvenience that is usually constructed with l rice of this feeding device, therefore logical
Silicon rod often can be clamped using fixture to be fed intake.But because silicon rod surface is more smooth, therefore fixture in clamping process not
Firmly, easily there is the situation of de- rod.
Utility model content
The technical problems to be solved in the utility model is：A kind of single crystal growing furnace charging silicon rod is provided, can be good at being applicable
In the secondary charging of single crystal growing furnace.
Technical scheme is used by the utility model solves its technical problem：A kind of single crystal growing furnace charging silicon rod, including
Silicon rod body, one end of described silicon rod body have fixture gripping section；Described fixture clamping section surface is provided with multiple recessed
Hole；The center of described pit is in the same horizontal line.
Further, the length of fixture gripping section described in the utility model for silicon rod body length 12%~
15%.
Further say, the depth of pit described in the utility model is 5~15mm.
Further say, pit described in the utility model is circular, strip or ellipse.
The beneficial effects of the utility model are that solve defect present in background technology, by setting pit, fixture energy
It is enough that there is more preferable grasp force in silicon rod end, so as to more preferably more stable feed intake, improve production efficiency.
Brief description of the drawings
The utility model is further illustrated with reference to the accompanying drawings and examples.
Fig. 1 is the structural representation of preferred embodiment of the present utility model；
In figure：1st, silicon rod body；2nd, fixture gripping section；3rd, pit.
Embodiment
The utility model is described in further detail presently in connection with accompanying drawing and preferred embodiment.These accompanying drawings are letter
The schematic diagram of change, only illustrates basic structure of the present utility model in a schematic way, thus its only show it is relevant with the utility model
Composition.
A kind of single crystal growing furnace charging silicon rod as shown in Figure 1, including silicon rod body 1, one end tool of described silicon rod body
There is fixture gripping section 2；Described fixture clamping section surface is provided with multiple pits 3；The center of described pit is in same level
On line.
In order to not influence the purity and product quality of silicon rod in itself, the length of fixture gripping section is silicon rod body length
12%~15%.The depth of pit is 5~15mm, and such depth can make fixture clamp silicon rod well；Pit for it is circular,
Strip or ellipse, are adapted to various forms of fixtures, and Fig. 1 pits are circle.
Simply specific embodiment of the present utility model described in description above, various illustrations are not to this practicality
New substantive content is construed as limiting, and person of an ordinary skill in the technical field can be to former institute after specification has been read
The embodiment stated is made an amendment or deformed, without departing from the spirit and scope of utility model.
Claims (4)
1. a kind of single crystal growing furnace charging silicon rod, including silicon rod body, it is characterised in that：One end of described silicon rod body has folder
Has gripping section；Described fixture clamping section surface is provided with multiple pits；The center of described pit is in the same horizontal line.
2. single crystal growing furnace charging silicon rod as claimed in claim 1, it is characterised in that：The length of described fixture gripping section is silicon
The 12%~15% of rod body length.
3. single crystal growing furnace charging silicon rod as claimed in claim 1, it is characterised in that：The depth of described pit is 5~15mm.
4. single crystal growing furnace charging silicon rod as claimed in claim 1, it is characterised in that：Described pit for circular, strip or
Ellipse.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720596791.8U CN206828677U (en) | 2017-05-25 | 2017-05-25 | Single crystal growing furnace charging silicon rod |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720596791.8U CN206828677U (en) | 2017-05-25 | 2017-05-25 | Single crystal growing furnace charging silicon rod |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206828677U true CN206828677U (en) | 2018-01-02 |
Family
ID=60773433
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720596791.8U Expired - Fee Related CN206828677U (en) | 2017-05-25 | 2017-05-25 | Single crystal growing furnace charging silicon rod |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206828677U (en) |
-
2017
- 2017-05-25 CN CN201720596791.8U patent/CN206828677U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20190903 Address after: 212000 Ganglong Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province Patentee after: Zhenjiang Rende New Energy Technology Co., Ltd. Address before: 213164 No. 8 Xindian Road, Wujin High-tech Industrial Development Zone, Changzhou City, Jiangsu Province Patentee before: Changzhou Shunfeng Photoelectric Material Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180102 Termination date: 20210525 |