CN206814885U - A kind of polycrystalline silicon ingot casting device - Google Patents

A kind of polycrystalline silicon ingot casting device Download PDF

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Publication number
CN206814885U
CN206814885U CN201720291403.5U CN201720291403U CN206814885U CN 206814885 U CN206814885 U CN 206814885U CN 201720291403 U CN201720291403 U CN 201720291403U CN 206814885 U CN206814885 U CN 206814885U
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CN
China
Prior art keywords
crucible
polycrystalline silicon
ingot casting
casting device
silicon ingot
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Expired - Fee Related
Application number
CN201720291403.5U
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Chinese (zh)
Inventor
王增林
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Ningxia Jinhai Jinjing Photoelectric Industry Co Ltd
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Ningxia Jinhai Jinjing Photoelectric Industry Co Ltd
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Priority to CN201720291403.5U priority Critical patent/CN206814885U/en
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Publication of CN206814885U publication Critical patent/CN206814885U/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Abstract

The utility model discloses a kind of polycrystalline silicon ingot casting device, including heat conduction cylinder;Heat-conducting cylinder is wound with coil heating electrode in vitro;Coil heating electrode jacket has body of heater;Insulation material is filled between body of heater and coil heating electrode;Crucible and magnetic control means are provided with heat-conducting cylinder body;Magnetic control means is located at crucible bottom;Vacuum extractor is provided with furnace body outer wall.Heat conduction cylinder and its coil of periphery heating electrode can improve heating effect in the utility model so that stove body temperature is uniform, saves heat conduction barrel space, improves space availability ratio;Magnetic control means has the function that directional solidification, during to polysilicon directional freezing, enables to Impurity Distribution to have directionality, reduce the resection rate of afterbody waste material, and the device is capable of the purity of polysilicon, so as to obtain 5N HIGH-PURITY SILICON, meet requirement of the crystal silicon solar to polysilicon purity.In addition, polycrystalline silicon ingot casting device of the present utility model reduces the waste of raw material.

Description

A kind of polycrystalline silicon ingot casting device
Technical field
It the utility model is related to field polysilicon, more particularly to a kind of polycrystalline silicon ingot casting device.
Background technology
The generating efficiency of polysilicon solar cell and monocrystaline silicon solar cell requires that silicon has higher purity.Right During silicon raw material is purified, directional solidification purification belongs to crucial, essential link, the crucible in process of setting The silicon liquid of bottom is first begin to solidification and reaches fractional condensation balance, and the small impurity of segregation coefficient constantly spreads from the silicon of solidification to liquid Separate, and be gathered in liquid, to reach fractional condensation balance, the small impurity of segregation coefficient constantly spreads from the silicon of solidification to liquid Separate and be gathered in liquid, as solidification is constantly carried out, concentration more and more higher of the metal impurities in liquid, finally casting The top of ingot solidifies, and insulation a period of time at relatively high temperatures after the completion of solidification, each composition is fully spread to reach point Solidifying balance, finally by the higher tip cut-off of metals content impurity, the crystal silicon ingot casting purified.
During current polysilicon directional freezing, when being directionally solidified into 75~85%, the solid liquid interface in crucible Be intended to level, and continue up to directional solidification and terminate, thus cut off waste material when need horizontal direction to cut off, resection rate compared with Greatly, the significant wastage of the energy and raw material is caused, therefore also increases cost.
Utility model content
In view of this, the utility model provides a kind of polycrystalline silicon ingot casting device, and the polycrystalline silicon ingot casting device can reduce Resection rate, while the purity of polysilicon can be improved.
What the technical solution of the utility model was realized in:
A kind of polycrystalline silicon ingot casting device, including:
Heat conduction cylinder;
The heat-conducting cylinder is wound with coil heating electrode in vitro;The coil heating electrode jacket has stove Body;Insulation material is filled between the body of heater and coil heating electrode;
Crucible and magnetic control means are provided with the heat-conducting cylinder body;
The magnetic control means is located at the crucible bottom;
Vacuum extractor is provided with the furnace body outer wall.
Preferably, the crucible includes crucible body, and the crucible body is internally provided with holding tank;Under the holding tank Side, the bottom of the crucible body are provided with cooling chamber, and coolant flow channel is provided with the cooling chamber.
Preferably, the coolant flow channel is fermat spiral runner.
Preferably, the quantity of the crucible and the quantity of the magnetic control means are all mutually 2~100.
Preferably, the insulation material is fire resistant heat preserving fiber.
The beneficial effects of the utility model are:
The utility model provides the coil heating electricity of a kind of polycrystalline silicon ingot casting device, heat conduction cylinder and its periphery Pole can improve heating effect so that stove body temperature is uniform, saves heat conduction barrel space, improves furnace space utilization rate, disappears Except blind area, the waste of raw material is avoided, while reduces energy consumption;Magnetic control means has the function that directional solidification, to polycrystalline In silicon directional solidification process, enable to Impurity Distribution that there is directionality, the resection rate of reduction afterbody waste material, and the device The purity for improving polysilicon is set, so as to obtain 5N HIGH-PURITY SILICON, meets requirement of the crystal silicon solar to polysilicon purity.Separately Outside, polycrystalline silicon ingot casting device of the present utility model reduces the waste of raw material.
Brief description of the drawings
, below will be to embodiment in order to illustrate more clearly of the utility model embodiment or technical scheme of the prior art Or the required accompanying drawing used is briefly described in description of the prior art, it should be apparent that, drawings in the following description are only It is some embodiments of the utility model, for those of ordinary skill in the art, is not paying the premise of creative work Under, other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation of the utility model polycrystalline silicon ingot casting device;
Fig. 2 is the structural representation of crucible in Fig. 1;
Fig. 3 is the structural representation of coolant flow channel in Fig. 1.
In figure:
1st, body of heater;2nd, crucible;3rd, heat conduction cylinder;4th, coil heating electrode;5th, insulation material;6th, magnetic control means; 7th, vacuum extractor;8th, crucible body;9th, holding tank;10th, cooling chamber;11st, coolant flow channel.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the embodiment of the utility model is carried out Clearly and completely describing, it is clear that described embodiment is only the utility model part of the embodiment, rather than whole Embodiment.Based on the embodiment in the utility model, those of ordinary skill in the art are not under the premise of creative work is made The every other embodiment obtained, belong to the scope of the utility model protection.
As shown in figure 1, a kind of polycrystalline silicon ingot casting device provided by the utility model, including:
Heat conduction cylinder 3;
The heat conduction cylinder 3 is around with coil heating electrode 4;It is cased with outside the coil heating electrode 4 Body of heater 1;Insulation material 5 is filled between the body of heater 1 and coil heating electrode 4;
Crucible 2 and magnetic control means 6 are provided with the heat conduction cylinder 3;
The magnetic control means 6 is located at the bottom of crucible 2;
Vacuum extractor 7 is provided with the outer wall of body of heater 1.
In above-mentioned technical proposal, the coil heating electrode 4 of heat conduction cylinder 3 and its periphery can improve heating effect Fruit so that temperature is uniform in body of heater 1, saves the space of heat conduction cylinder 3, improves the space availability ratio of body of heater 1, eliminate blind area, avoid The waste of raw material, while reduce energy consumption;Magnetic control means 6 has the function that directional solidification, to polysilicon directional freezing mistake Cheng Zhong, enable to Impurity Distribution that there is directionality, the resection rate of reduction afterbody waste material, and the setting of the device to improve more The purity of crystal silicon, so as to obtain 5N HIGH-PURITY SILICON, meet requirement of the crystal silicon solar to polysilicon purity.In addition, this practicality is new The polycrystalline silicon ingot casting device of type reduces the waste of raw material.
In the present embodiment, in order to improve cooling effectiveness, cooling uniformity, so that the quality of polysilicon is more excellent Different, crucible 2 includes crucible body 8, and crucible body 8 is internally provided with holding tank 9;Lower section, the bottom of crucible body 8 of holding tank 9 are set Cooling chamber 10 is equipped with, coolant flow channel 11 is provided with cooling chamber 10, referring specifically to accompanying drawing 2;Cooling medium in cooling pipe is cold But the liquid silicon in holding tank 9, so as to improve cooling effectiveness.
In the present embodiment, referring to accompanying drawing 3, coolant flow channel 11 is fermat spiral runner, it is possible to increase thing in holding tank 9 The uniform uniformity of cooling of matter, and then optimize the quality of polysilicon.
Magnetic control means 6 is used to be oriented solidification to the silicon liquid in crucible 2 so that the Impurity Distribution in silicon liquid has direction Property, it is easy to cut off, reduces the resection rate of afterbody waste material;In the present embodiment, 2~100 crucibles 2 and magnetic control means can be set 6, it can be achieved to purify while multigroup polysilicon, ensure the mass production of high-purity polycrystalline silicon, improve high-purity polycrystalline silicon Production efficiency.
Insulation material 5 is used for reducing furnace heat loss, so as to ensure the heat-insulating property of polycrystalline silicon ingot casting device.In this reality Apply in mode, insulation material 5 is fire resistant heat preserving fiber, and the material can ensure the heat-insulating property of polycrystalline silicon ingot casting device.
Preferred embodiment of the present utility model is the foregoing is only, it is all at this not to limit the utility model Within the spirit and principle of utility model, any modification, equivalent substitution and improvements made etc., the utility model should be included in Protection domain within.

Claims (5)

  1. A kind of 1. polycrystalline silicon ingot casting device, it is characterised in that including:
    Heat conduction cylinder (3);
    The heat conduction cylinder (3) is around with coil heating electrode (4);The coil heats electrode (4) overcoat There is body of heater (1);Insulation material (5) is filled between the body of heater (1) and coil heating electrode (4);
    Crucible (2) and magnetic control means (6) are provided with the heat conduction cylinder (3);
    The magnetic control means (6) is located at the crucible (2) bottom;
    Vacuum extractor (7) is provided with body of heater (1) outer wall.
  2. 2. polycrystalline silicon ingot casting device as claimed in claim 1, it is characterised in that the crucible (2) includes crucible body (8), institute That states crucible body (8) is internally provided with holding tank (9);The lower section of the holding tank (9), the bottom of the crucible body (8) are set There is cooling chamber (10), coolant flow channel (11) is provided with the cooling chamber (10).
  3. 3. polycrystalline silicon ingot casting device as claimed in claim 2, it is characterised in that the coolant flow channel (11) is Fermat spiral flow Road.
  4. 4. polycrystalline silicon ingot casting device as claimed in claim 1, it is characterised in that the quantity of the crucible (2) and the magnetic control The quantity of device (6) is all mutually 2~100.
  5. 5. polycrystalline silicon ingot casting device as claimed in claim 1, it is characterised in that the insulation material (5) is that fire resistant heat preserving is fine Dimension.
CN201720291403.5U 2017-03-22 2017-03-22 A kind of polycrystalline silicon ingot casting device Expired - Fee Related CN206814885U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201720291403.5U CN206814885U (en) 2017-03-22 2017-03-22 A kind of polycrystalline silicon ingot casting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201720291403.5U CN206814885U (en) 2017-03-22 2017-03-22 A kind of polycrystalline silicon ingot casting device

Publications (1)

Publication Number Publication Date
CN206814885U true CN206814885U (en) 2017-12-29

Family

ID=60751644

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201720291403.5U Expired - Fee Related CN206814885U (en) 2017-03-22 2017-03-22 A kind of polycrystalline silicon ingot casting device

Country Status (1)

Country Link
CN (1) CN206814885U (en)

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CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20171229

Termination date: 20180322