CN202116323U - Purifying device of silicon crystal - Google Patents
Purifying device of silicon crystal Download PDFInfo
- Publication number
- CN202116323U CN202116323U CN2011202399821U CN201120239982U CN202116323U CN 202116323 U CN202116323 U CN 202116323U CN 2011202399821 U CN2011202399821 U CN 2011202399821U CN 201120239982 U CN201120239982 U CN 201120239982U CN 202116323 U CN202116323 U CN 202116323U
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- crucible
- silicon
- silicon crystal
- purifying
- utility
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Abstract
The utility model relates to a purifying device of silicon crystal, comprising a furnace barrel. Heat insulation materials are arranged on the inner wall of the furnace barrel and a furnace cover is arranged at the top of the furnace barrel. The utility model is characterized in that a rotary tray is arranged at the bottom of the furnace barrel and a crucible is arranged in the upper part of the rotary tray; a stirring blade is arranged at the bottom of the crucible and rotates along with the crucible to stir an alloy solution. A cold trap is arranged in the crucible and formed by inserting a cooling rod into the alloy solution. The utility model has a simple structure and is able to obtain the high purity acicular silicon aggregate.
Description
Technical field
The utility model relates to a kind of equipment for purifying of silicon crystal.
Background technology
The main flow ME of silicon material for solar cells is a Siemens Method; Its technology mainly comprises: metallurgical grade silicon and hcl reaction are generated trichlorosilane, distillation purify trichlorosilane, trichlorosilane after purifying with the high-purity hydrogen reduction under 1100 ℃ of high temperature, obtain high-purity polycrystalline silicon.This method is because seriously polluted, and energy consumption is too high, is classified as the inhibition construction project in 2009 by Chinese Government.(specifically seeing " department such as State Development and Reform Commission is write instructions and transfer about suppressing the develop in a healthy way notice of some suggestions of part industry over capacity and duplicate construction guiding industry by State Council " of on September 26th, 2009 dispatch).
The USP silicon chip crystallization purifying (U.S Pat. No. 3097068,1963) of application such as Lawrence M Litz, proposing with the metallic aluminium is solvent, through the recrystallization process purifying silicon.Its device that adopts is seen Fig. 1, and technology is made up of following steps: (1), with sial heating for dissolving in first crucible according to a certain ratio; (2), the first crucible interalloy melt is introduced crystallization in the second low slightly crucible of temperature; (3), the silicon filtration of separating out is pulled out from second crucible with fire-resistant funnel with holes; (4), remainder melt is drawn back in first crucible; (5), in first crucible, add a little silico briquette, dissolving back repeating step (2).The subject matter of this technology is: the silicon of separating out in (1), the melt is elongated piece, and the funnel hole greatly then collected rate of silicon is very low, and it is too high to contain aluminium in the little then gleanings in hole.Method through pickling is removed aluminium, then need consume a large amount of acid, loses a large amount of aluminium, causes environmental pollution easily; (2), the dissolving crystallized mode that has adopted melt to shift at two warm areas, the required high-purity tubing of melt flow and the motivating force of melt flow all are difficult to obtain under hot conditions.
The patent WO2010/098676A1 of Harsharn Tathgar2010 application; Crystallisation process to Litz technology improves; The device that adopts is seen shown in Figure 2; Method is to be 100～200 microns silicon crystal at a small amount of particle diameter of crystallizing field input, when crystal grow up behind 1～5mm through filter or the centrifuging mode with melt and crystal separation.Though this patent can effectively improve the separation efficiency of silicon crystal and molten aluminium, the silicon grain surface is still residual to have a large amount of aluminium, and above-mentioned two defectives are not solved.
Patent US 7,883,680 B22011 that Scott Nichol obtained in 2011; Adopted single crucible for smelting crystallization method, device is seen shown in Figure 3, has avoided the transfer of melt between two crucibles; Adopt tamper that the silicon crystal of separating out is smash to the crucible bottom enrichment, the top melt is poured out.Adopt the silicon crystal aggregate of this method enrichment still to comprise a large amount of aluminium, the impurity of bottom deposit is difficult to separate with silicon crystal in addition.
The utility model content
In order to overcome the deficiency of prior art, the purpose of the utility model provides a kind of purifying plant of silicon, and is simple in structure, good separating effect.
For realizing above-mentioned purpose, the technical scheme below the utility model has adopted:
The equipment for purifying of silicon crystal comprises: the stove bucket, and the inwall of stove bucket is provided with lagging material; The lagging material inboard is provided with well heater; Stove bucket top is provided with bell, it is characterized in that the bottom of stove bucket is provided with rotary-tray, and crucible is laid on the top of rotary-tray; The crucible inner bottom part is provided with agitating vane, and agitating vane rotates with crucible; Cold-trap is set in the crucible.
Described cold-trap inserts cooling stick through middle and upper part in crucible and forms, and said cooling tube is arranged in the cooling cover.
The utility model has following positive effect: the utility model is simple in structure, can obtain high purity needle-like silicon aggregate.
Description of drawings
Fig. 1 is the structural representation of Litz silicon device that purifying technique adopts;
Fig. 2 is the structural representation of the silicon device that purifying technique adopts that proposes of people such as Harsharn Tathgar;
Fig. 3 is the structural representation of the silicon device that purifying technique adopts that proposes of people such as Scott Nichol;
Fig. 4 is the equipment for purifying structural representation of the utility model silicon crystal;
The explanation of main Reference numeral among Fig. 4: well heater 10, cooling stick sleeve 11, agitating vane 12, needle-like HIGH-PURITY SILICON aggregate 13, stove tube 14, rotary-tray 15, crucible 16, bell 17, water-cooled tube 18.
Embodiment
Below in conjunction with embodiment the utility model is done further detailed description.
Fig. 4 is the equipment for purifying structural representation of silicon crystal.With reference to shown in Figure 4, the equipment for purifying of silicon crystal comprises: stove bucket 14, and the inwall of stove bucket is provided with lagging material, and the lagging material inboard is a well heater 10.Stove bucket top is provided with bell 17, and the bottom of stove bucket 14 is provided with rotary-tray 15, and the top of rotary-tray is provided with crucible 16, and the crucible inner bottom part is provided with the agitating vane 12 of no bar, and cooling stick sleeve 11 inserts the top of crucible from the crucible top.
During use, raw materials such as Si, Al are concentrated put in the crucible 8, be heated to the melt temperature of raw material; Insulation; After removing dross on surface of fusant, cooling stick sleeve 11 is inserted the sial melt, around cooling stick, form cold-trap; Control heater power makes the interior temperature of stove lower the temperature by 2～10 ℃/hour speed.The cooling stick sleeve is processed with high purity graphite, in order to avoid pollute silumin solution.Start rotary-tray 15, alloy solution forced convection under agitating vane 12 drives is beneficial on the cooling stick sleeve, form needle-like HIGH-PURITY SILICON aggregate; When the alloy solution temperature is reduced to 600 ℃, under keeping warm mode, the cooling stick sleeve is taken out, pound out the hemispherical needle-like HIGH-PURITY SILICON aggregate of surface crystallization.Remainder melt in the crucible 16 is cast the silumin ingot and is sold.
Above-mentioned embodiment does not limit the technical scheme of the utility model in any form, and every employing is equal to the protection domain that replacement or the technical scheme that mode obtained of equivalent transformation all drop on the utility model.
Claims (3)
1. the equipment for purifying of silicon crystal comprises: the stove bucket, and the inwall of stove bucket is provided with lagging material; The lagging material inboard is provided with well heater; Stove bucket top is provided with bell, it is characterized in that the bottom of stove bucket is provided with rotary-tray, and crucible is laid on the top of rotary-tray; The crucible inner bottom part is provided with agitating vane, and agitating vane rotates with crucible; Cold-trap is set in the crucible.
2. according to the equipment for purifying of the said silicon crystal of claim 1, it is characterized in that said cold-trap is to insert cooling tube through middle and upper part in crucible to form.
3. according to the equipment for purifying of the said silicon crystal of claim 2, it is characterized in that said cooling tube is arranged in the cooling cover.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202399821U CN202116323U (en) | 2011-07-08 | 2011-07-08 | Purifying device of silicon crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202399821U CN202116323U (en) | 2011-07-08 | 2011-07-08 | Purifying device of silicon crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202116323U true CN202116323U (en) | 2012-01-18 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011202399821U Expired - Fee Related CN202116323U (en) | 2011-07-08 | 2011-07-08 | Purifying device of silicon crystal |
Country Status (1)
| Country | Link |
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| CN (1) | CN202116323U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102674365A (en) * | 2012-04-23 | 2012-09-19 | 锦州新世纪石英（集团）有限公司 | Method for removing metal impurities in polycrystalline silicon |
| CN103952755A (en) * | 2014-05-06 | 2014-07-30 | 王进 | Process for removing insoluble matters from high-purity silicon |
| CN112553473A (en) * | 2020-11-20 | 2021-03-26 | 浙江最成半导体科技有限公司 | High purity aluminum purification method and apparatus |
-
2011
- 2011-07-08 CN CN2011202399821U patent/CN202116323U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102674365A (en) * | 2012-04-23 | 2012-09-19 | 锦州新世纪石英（集团）有限公司 | Method for removing metal impurities in polycrystalline silicon |
| CN103952755A (en) * | 2014-05-06 | 2014-07-30 | 王进 | Process for removing insoluble matters from high-purity silicon |
| CN103952755B (en) * | 2014-05-06 | 2016-08-24 | 王进 | The removal technique of insoluble matter in HIGH-PURITY SILICON |
| CN112553473A (en) * | 2020-11-20 | 2021-03-26 | 浙江最成半导体科技有限公司 | High purity aluminum purification method and apparatus |
| CN112553473B (en) * | 2020-11-20 | 2022-02-18 | 浙江最成半导体科技有限公司 | High purity aluminum purification method and apparatus |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120118 Termination date: 20130708 |