CN206806731U - A kind of high power semi-conductor bar bar laser shaper - Google Patents
A kind of high power semi-conductor bar bar laser shaper Download PDFInfo
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- CN206806731U CN206806731U CN201720597629.8U CN201720597629U CN206806731U CN 206806731 U CN206806731 U CN 206806731U CN 201720597629 U CN201720597629 U CN 201720597629U CN 206806731 U CN206806731 U CN 206806731U
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- bar
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- power semi
- microcylindrical
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Abstract
The utility model discloses a kind of high power semi-conductor bar bar laser shaper, the device includes semiconductor bar bar, fast axis collimation lens, microcylindrical lens group, prism and the condenser lens set gradually, fast axis collimation lens are arranged on semiconductor bar bar side, microcylindrical lens group include array arrangement and with the one-to-one microcylindrical lens of luminous point on semiconductor bar bar.Compared with prior art, the beneficial effects of the utility model are, space segmentation and the rearrangement of fast and slow axis are carried out to bar bar for having carried out fast axis collimation using the low microcylindrical lens array of simple in construction, cost；Recycle single or multiple prisms to carry out slow axis solid matters, eventually through globe lens or post lens focus, realize the spot shaping of high power semi-conductor bar bar.Have the advantages that simple in construction, stability is strong, regulation is quick and low manufacture cost.
Description
Technical field
It the utility model is related to field of laser device technology, more particularly to a kind of high power semi-conductor bar bar laser shaping dress
Put.
Background technology
The power output of semiconductor laser bar bar can reach a kilowatt magnitude, and single bar of bar of commercial product can reach
200W.Because the power output and conversion efficiency of high power semiconductor lasers greatly improve, threshold current density significantly reduces,
And there is small volume, long lifespan (up to 100,000 hours), it is begun with extensively in the field such as industrial, military, civilian
General application.
In many practical applications, in particular for pumping field, it is desirable to which semiconductor bar bar laser exports uniform light spots
Or fiber coupling output.Semiconductor bar bar laser by multiple luminous points be encapsulated in same it is heat sink on form.Each
Luminous point all has asymmetrically distributed output light field, and it is presented 30 °~70 ° on (quick shaft direction) perpendicular to PN junction direction
The angle of divergence, but luminous zone is only 1 μm wide, and beam quality reaches diffraction limit；Parallel to PN junction direction (slow-axis direction) though on
Only 10 ° or so of the angle of divergence, but luminous sector width is usually 100um, therefore beam quality extreme difference, compared with fast axle differ hundred times with
On.And semiconductor bar bar laser by multiple luminous points be encapsulated in same it is heat sink on form, exist between each luminous point
Spacing, usually 400um, this causes beam quality more equivalent to the line source that multiple luminous point intermittent arrangements are grown into 10mm
Deteriorate, therefore light beam can not be focused to size pair by the extremely asymmetric light beam of fast and slow axis beam quality by simple focusing system
Weighing-appliance has the focal spot of certain depth of focus.
High power semi-conductor bar bar laser also has in addition to fast and slow axis beam quality has asymmetry problem
" smile " effect, it is more difficult to want acquisition uniform light spots.And existing apparatus for shaping is often complicated, while there is list again
The shortcomings of meta structure requirement on machining accuracy is high, and installation accuracy requires high, and cost is high.
Utility model content
The purpose of this utility model is to provide a kind of small volume, compact-sized big work(in view of the shortcomings of the prior art
Rate semiconductor bar bar laser shaper.
A kind of high power semi-conductor bar bar laser shaper, it is semiconductor bar bar that the device includes setting gradually, fast
Axle collimation lens, microcylindrical lens group, prism and condenser lens, fast axis collimation lens are arranged on semiconductor bar bar side, micro- circle
Post lens group include array arrangement and with the one-to-one microcylindrical lens of luminous point on semiconductor bar bar.
Further, microcylindrical lens is corresponding with width with the quantity of luminous point on semiconductor bar bar.
Further, the fast axle of microcylindrical lens and semiconductor bar bar tilts an angle.
Further, 40 °~50 ° be the angle ranging from.
Further, 45 ° be the angle ranging from.
Further, the quantity of prism is 1.
Further, the quantity of prism be more than 1, and solid matter set.
Further, condenser lens is globe lens or post lens.
Compared with prior art, the beneficial effects of the utility model are, micro- cylinder that utilization is simple in construction, cost is low is saturating
Lens array carries out space segmentation and the rearrangement of fast and slow axis to bar bar for having carried out fast axis collimation；Recycle single or multiple prisms
Slow axis solid matter is carried out, eventually through globe lens or post lens focus, realizes the spot shaping of high power semi-conductor bar bar.Have
Simple in construction, stability is strong, regulation is quick and the advantages that low manufacture cost.
Brief description of the drawings
Fig. 1 is structural representation of the present utility model；
Fig. 2 is the position view of semiconductor bar bar and microcylindrical lens.
In figure, 1, semiconductor bar bar；2nd, fast axis collimation lens；3rd, microcylindrical lens group；4th, prism；5th, condenser lens；6、
Luminous point；7th, microcylindrical lens.
Embodiment
In order to further describe the utility model, a kind of high power semi-conductor bar bar is expanded on further below in conjunction with the accompanying drawings and swashs
The embodiment of light device apparatus for shaping, following examples be to it is of the present utility model explanation and the utility model does not limit to
In following examples.
A kind of high power semi-conductor bar bar laser shaper as shown in Figures 1 and 2, the device include setting gradually
Semiconductor bar bar 1, fast axis collimation lens 2, microcylindrical lens group 3, prism 4 and condenser lens 5, in addition to condenser lens 5, each portion
Part connects into an entirety by way of bonding；Fast axis collimation lens 2 are arranged on the side of semiconductor bar bar 1.Semiconductor bar bar 1
The laser of injection first passes around fast axis collimation lens 2, realizes the collimation of fast axle.
Microcylindrical lens group 3 includes array arrangement and micro- cylinder is saturating correspondingly with the luminous point 6 on semiconductor bar bar 1
Mirror 7, it is preferable that microcylindrical lens 7 is corresponding with width with the quantity of luminous point 6 on semiconductor bar bar 1, according to semiconductor bar bar
The microcylindrical lens 7 of quantity and width the selection suitable diameter of upper luminous point 6, and arranged by certain spacing, make micro- cylinder saturating
Luminous point 6 on mirror 7 and semiconductor bar bar 1 corresponds, and realizes the space segmentation of the light beam of semiconductor bar bar 1.
As shown in Figure 2, it is preferable that the axis of microcylindrical lens 7 tilts an angle with the fast axle of semiconductor bar bar 1, preferably
For 45 °, and according to the beam angle and distance of luminous point, there can be ± 5 ° of adjustable range, Fig. 2 is from face laser direction.
According to the image-forming principle of post lens, fast and slow axis can realize it is controllable rearrange, i.e. the fast axle of luminous point 6 and semiconductor bar
The slow-axis direction of bar 1 is parallel, and the slow-axis direction of luminous point 6 is parallel with the quick shaft direction of semiconductor bar bar 1.
After single prism or multiple solid matter prisms, by the width compression of the slow axis of semiconductor bar bar 1；Last line focus is saturating
Hot spot is focused into the size of needs by mirror 5, it is preferable that condenser lens 5 is globe lens or post lens, or is the more of any of which
The focus lens group of individual composition.
The core of the present apparatus is to having carried out fast axis collimation using the low array of microcylindrical lens 7 of simple in construction, cost
Semiconductor bar bar 1 carries out space segmentation and the rearrangement of fast and slow axis, recycles single or multiple prisms 4 to carry out slow axis solid matter, most
Eventually by globe lens or post lens focus, the spot shaping of high power semi-conductor bar bar is realized, is solved in the prior art partly
Conductor bar bar can not effectively obtain uniform light spots, and spot shaping apparatus structure is complicated in the prior art, installation requirement is high and
The problem of cost is high.
Obviously, above-mentioned embodiment of the present utility model is only intended to clearly illustrate the utility model example,
And it is not the restriction to embodiment of the present utility model.For those of ordinary skill in the field, stated upper
It can also be made other changes in different forms on the basis of bright.Here all embodiments can not be given thoroughly
Lift.It is every to belong to obvious changes or variations that the technical solution of the utility model is extended out still in the utility model
Protection domain row.
Claims (8)
1. a kind of high power semi-conductor bar bar laser shaper, it is characterised in that what the device included setting gradually partly leads
Body bar bar (1), fast axis collimation lens (2), microcylindrical lens group (3), prism (4) and condenser lens (5), fast axis collimation lens are set
Put in semiconductor bar bar side, microcylindrical lens group include array arrangement and with a pair of luminous point (6) 1 on semiconductor bar bar
The microcylindrical lens (7) answered.
2. high power semi-conductor bar bar laser shaper according to claim 1, it is characterised in that microcylindrical lens
It is corresponding with width with the quantity of luminous point on semiconductor bar bar.
3. high power semi-conductor bar bar laser shaper according to claim 1, it is characterised in that microcylindrical lens
The fast axle of axis and semiconductor bar bar tilt an angle.
4. high power semi-conductor bar bar laser shaper according to claim 3, it is characterised in that the angle ranging from
40 °~50 °.
5. high power semi-conductor bar bar laser shaper according to claim 3, it is characterised in that the angle ranging from
45°。
6. high power semi-conductor bar bar laser shaper according to claim 1, it is characterised in that the quantity of prism
For 1.
7. high power semi-conductor bar bar laser shaper according to claim 1, it is characterised in that the quantity of prism
For more than 1, and solid matter is set.
8. high power semi-conductor bar bar laser shaper according to claim 1, it is characterised in that condenser lens is
Globe lens or post lens.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720597629.8U CN206806731U (en) | 2017-05-26 | 2017-05-26 | A kind of high power semi-conductor bar bar laser shaper |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720597629.8U CN206806731U (en) | 2017-05-26 | 2017-05-26 | A kind of high power semi-conductor bar bar laser shaper |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206806731U true CN206806731U (en) | 2017-12-26 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201720597629.8U Active CN206806731U (en) | 2017-05-26 | 2017-05-26 | A kind of high power semi-conductor bar bar laser shaper |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021037224A1 (en) * | 2019-08-29 | 2021-03-04 | 深圳市中光工业技术研究院 | Laser light source and laser light source system |
| CN113972555A (en) * | 2020-07-23 | 2022-01-25 | 山东华光光电子股份有限公司 | Optical processing method for semiconductor laser stack array |
| CN114660820A (en) * | 2022-03-15 | 2022-06-24 | 中国电子科技集团公司第十三研究所 | Large-view-field multi-Bar integrated laser emission structure |
-
2017
- 2017-05-26 CN CN201720597629.8U patent/CN206806731U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021037224A1 (en) * | 2019-08-29 | 2021-03-04 | 深圳市中光工业技术研究院 | Laser light source and laser light source system |
| CN113972555A (en) * | 2020-07-23 | 2022-01-25 | 山东华光光电子股份有限公司 | Optical processing method for semiconductor laser stack array |
| CN114660820A (en) * | 2022-03-15 | 2022-06-24 | 中国电子科技集团公司第十三研究所 | Large-view-field multi-Bar integrated laser emission structure |
| CN114660820B (en) * | 2022-03-15 | 2024-04-16 | 中国电子科技集团公司第十三研究所 | Large-view-field multi-Bar integrated laser emission structure |
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