CN206711899U - There is one kind power to increase powerful Transient Suppression Diode encapsulating structure - Google Patents
There is one kind power to increase powerful Transient Suppression Diode encapsulating structure Download PDFInfo
- Publication number
- CN206711899U CN206711899U CN201720488295.0U CN201720488295U CN206711899U CN 206711899 U CN206711899 U CN 206711899U CN 201720488295 U CN201720488295 U CN 201720488295U CN 206711899 U CN206711899 U CN 206711899U
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- Prior art keywords
- housing
- pin
- boss
- transient suppression
- suppression diode
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
Abstract
The utility model discloses one kind, and there is power to increase powerful Transient Suppression Diode encapsulating structure, including housing and lead, the side of the housing is connected with the first pin, the opposite side of the housing is connected with second pin, chip is connected with the middle part of the housing, the crevice place interlocking of the housing and chip has boss.This kind of utility model is reasonable in design; it is easy to use; by the way that the boss of housing is changed to square; increase the contact area of boss and chip; and the power for making surge capacity reach 600W, the power enhancing of Transient Suppression Diode is especially suitable for, the efficiency to electronic component protection can be effectively improved; it is simple and convenient, it is adapted to be widely popularized.
Description
【Technical field】
The utility model diode technologies field, it is more particularly to a kind of that there is power to increase powerful Transient Suppression Diode
Encapsulating structure.
【Background technology】
Transient Suppression Diode abbreviation TVS, it is a kind of high-effect protection device of diode.When TVS diode
When two-stage is by reverse transient state high energy impact events, the high impedance at the two poles of the earth can be changed into by it with the speed of 10 minus 12 power second-time
Low ESR, up to thousands of watts of surge power is absorbed, the voltage clamp voltage of two interpolars is located at a predetermined value, effectively protects
Damage of the precision components (IC) protected in electronic circuit from various surge pulses.
But at present, it needs to bear 600W surge capacity in circuit, and the encapsulation used is SMB (DO-214AA),
Volume is larger, and cost is higher, uses with certain limitation.
【Utility model content】
Main purpose of the present utility model is that providing one kind, there is power to increase powerful Transient Suppression Diode encapsulation
Structure, effectively can solve the problems, such as in background technology.
To achieve the above object, the technical scheme that the utility model is taken is：
There is one kind power to increase powerful Transient Suppression Diode encapsulating structure, including housing and lead, the housing
Side be connected with the first pin, the opposite side of the housing is connected with second pin, chip is connected with the middle part of the housing,
The crevice place interlocking of the housing and chip has boss.
Further, first pin is connected to the top of housing by lead.
Further, the second pin is connected to the bottom of housing by lead.
Further, the boss is provided with two altogether, and boss is fixed on the upper and lower ends of chip.
Further, the boss is square structure, and the length of side of the boss is 1.4mm.
Further, the housing is shaped as cuboid, and housing is sealing structure.
Further, first pin and the material of second pin are red copper, and the first pin and the table of second pin
Face is coated with silver.
Compared with prior art, the utility model has the advantages that：This kind of utility model is reasonable in design, user
Just, by the way that the boss of housing is changed to square, and rabbet boss in the both sides of chip, can make contact of the boss with chip for this
Area increases, and then improves surge capacity, is allowed to power and reaches 600w, is especially suitable for the power enhancing of Transient Suppression Diode,
The performance to electronic component protection can be effectively improved, it is simple and practical, and also physical examination is smaller, and cost is relatively low, is adapted to push away extensively
Extensively.
【Brief description of the drawings】
Fig. 1 is main structure diagram of the present utility model.
Fig. 2 is overlooking the structure diagram of the present utility model.
Fig. 3 is dimensional structure diagram of the present utility model.
In figure：1st, the first pin；2nd, housing；3rd, boss；4th, chip；5th, second pin；6th, lead.
【Embodiment】
Technological means, creation characteristic, reached purpose and effect to realize the utility model are easy to understand, below
With reference to embodiment, the utility model is expanded on further.
As Figure 1-3, it is a kind of that there is power to increase powerful Transient Suppression Diode encapsulating structure, including the He of housing 2
Lead 6, the side of the housing 2 are connected with the first pin 1, and the opposite side of the housing 2 is connected with second pin 5, the shell
The middle part of body 2 is connected with chip 4, and the crevice place interlocking of the housing 2 and chip 4 has boss 3, can effectively realize that transient state presses down for this
The power enhancing of diode processed.
Wherein, first pin 1 is connected to the top of housing 2 by lead 6.
Wherein, the second pin 5 is connected to the bottom of housing 2 by lead 6.
Wherein, the boss 3 is provided with two altogether, and boss 3 is fixed on the upper and lower ends of chip 4, improves boss and core
The contact area of piece.
Wherein, the boss 3 is square structure, and the length of side of the boss 3 is 1.4mm.
Wherein, the housing 2 is shaped as cuboid, and housing 2 is sealing structure, and internal electronic element is isolated
Protection.
Wherein, first pin 1 and the material of second pin 5 are red copper, and the first pin 1 and the table of second pin 5
Face is coated with silver, can effectively improve electric conductivity, and anti-oxidation.
It should be noted that the utility model to be a kind of there is power to increase powerful Transient Suppression Diode encapsulation knot
Structure, by the way that the boss 3 inside housing 2 is arranged into square, and rabbet in the both sides of chip 4, contact area improved for this,
And then surge capacity is improved, 600W power is reached, last operation person, the first pin 1 and second pin 5 need to only be accessed outer
Connect equipment.
The advantages of general principle and principal character of the present utility model and the utility model has been shown and described above.One's own profession
The technical staff of industry is it should be appreciated that the utility model is not restricted to the described embodiments, described in above-described embodiment and specification
Simply illustrate principle of the present utility model, on the premise of the spirit and scope of the utility model is not departed from, the utility model is also
Various changes and modifications are had, these changes and improvements are both fallen within claimed the scope of the utility model.The utility model
Claimed scope is by appended claims and its equivalent thereof.
Claims (7)
1. there is one kind power to increase powerful Transient Suppression Diode encapsulating structure, including housing (2) and lead (6), it is special
Sign is：The side of the housing (2) is connected with the first pin (1), and the opposite side of the housing (2) is connected with second pin
(5) chip (4), is connected with the middle part of the housing (2), the housing (2) and the crevice place interlocking of chip (4) have boss (3).
It is 2. according to claim 1 a kind of with the powerful Transient Suppression Diode encapsulating structure of power increasing, its feature
It is：First pin (1) is connected to the top of housing (2) by lead (6).
It is 3. according to claim 1 a kind of with the powerful Transient Suppression Diode encapsulating structure of power increasing, its feature
It is：The second pin (5) is connected to the bottom of housing (2) by lead (6).
It is 4. according to claim 1 a kind of with the powerful Transient Suppression Diode encapsulating structure of power increasing, its feature
It is：The boss (3) is provided with two altogether, and boss (3) is fixed on the upper and lower ends of chip (4).
5. there is one kind according to claim 1 or 4 power to increase powerful Transient Suppression Diode encapsulating structure, it is special
Sign is：The boss (3) is square structure, and the length of side of the boss (3) is 1.4mm.
It is 6. according to claim 1 a kind of with the powerful Transient Suppression Diode encapsulating structure of power increasing, its feature
It is：The housing (2) is shaped as cuboid, and housing (2) is sealing structure.
It is 7. according to claim 1 a kind of with the powerful Transient Suppression Diode encapsulating structure of power increasing, its feature
It is：The material of first pin (1) and second pin (5) is red copper, and the first pin (1) and the table of second pin (5)
Face is coated with silver.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720488295.0U CN206711899U (en) | 2017-05-04 | 2017-05-04 | There is one kind power to increase powerful Transient Suppression Diode encapsulating structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720488295.0U CN206711899U (en) | 2017-05-04 | 2017-05-04 | There is one kind power to increase powerful Transient Suppression Diode encapsulating structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206711899U true CN206711899U (en) | 2017-12-05 |
Family
ID=60466018
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720488295.0U Active CN206711899U (en) | 2017-05-04 | 2017-05-04 | There is one kind power to increase powerful Transient Suppression Diode encapsulating structure |
Country Status (1)
| Country | Link |
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| CN (1) | CN206711899U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108470725A (en) * | 2018-05-02 | 2018-08-31 | 江苏匠心信息科技有限公司 | A kind of high performance control chip-packaging structure |
-
2017
- 2017-05-04 CN CN201720488295.0U patent/CN206711899U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108470725A (en) * | 2018-05-02 | 2018-08-31 | 江苏匠心信息科技有限公司 | A kind of high performance control chip-packaging structure |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20180521 Address after: 201317 358, room 7, No. 999, hang Nan Road, Pudong New Area, Shanghai. Co-patentee after: Jiangxi Sari Microelectronic Technology Co., Ltd. Patentee after: Sari Microelectronics (Shanghai) Co., Ltd. Address before: 200233 358, room 7, No. 999, hang Nan Road, Pudong New Area, Shanghai. Patentee before: Sari Microelectronics (Shanghai) Co., Ltd. |
|
| TR01 | Transfer of patent right |