CN207602569U - A kind of low-capacitance bidirectional band negative resistance TVS device - Google Patents
A kind of low-capacitance bidirectional band negative resistance TVS device Download PDFInfo
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- CN207602569U CN207602569U CN201721485595.XU CN201721485595U CN207602569U CN 207602569 U CN207602569 U CN 207602569U CN 201721485595 U CN201721485595 U CN 201721485595U CN 207602569 U CN207602569 U CN 207602569U
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- tss
- tvs
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- capacitance
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
Abstract
The utility model discloses a kind of low-capacitance bidirectional band negative resistance TVS devices and preparation method thereof, a low capacitance TSS chip and a TVS chip including overlapping up and down, the low capacitance TSS chips and the TVS chips upper and lower surface are respectively together with frame welding, and intermediate frame is shared for the low capacitance TSS chips and the TVS chips.Traditional TVS device Surge handling capability and the chip space of a whole page are proportional relationships, and small device capacitor can not be obtained while big surge capacity is obtained.The utility model allows device to have both big surge capacity and the characteristic of low capacitance simultaneously, and device has the advantages of encapsulation volume is small, at low cost, reliability is high by the method for laminated sheet package.
Description
Technical field
It is more particularly to a kind of with TSS (Thyristor) the utility model is related to technical field of semiconductors, it is also known as electric
Gush low-capacitance TVS (the Transient Voltage Suppressors) device and its manufacturing method for inhibiting thyristor.
Background technology
With the development of electronic information technology, semiconductor devices small, high density and multifunction, especially just
The consumption electronic product for taking formula has board area strict requirements, while the response device time fast one is also required to meet high speed number
According to the transmission of circuit, device will not deteriorate to ensure electronic equipment after ensureing the glitch by multiple voltage and current again
Due quality.
Transient Voltage Suppressor (TVS) is a kind of semiconductor devices for being used for voltage transient and carrying out surge protection, just can be very
Good solves the problems, such as these.It has clamp coefficient very little, and small, response is fast, and leakage current is small, high reliability.Cause
And it is used widely in the protection of voltage transient and surge.Protection for high-frequency circuit then needs low capacitance or super
Low-capacitance TVS (LCTVS) to reduce interference of the parasitic capacitance to circuit, reduces the attenuation of high-frequency circuit signal.
TVS surge capacities increase with the increase of the chip space of a whole page, but the negative effect brought therewith is exactly with the space of a whole page
Increase capacitance can be increasing.With science and technology development we to low capacitance, big surge, the TVS device demand of small electric leakage is compeled
In the eyebrows and eyelashes.In order to meet to big surge capacity, the demand of low capacitance.The utility model provides a kind of using TVS and TSS series connection
The method of encapsulation, to ensure device, entire in the case of big surge capacity (8/20 more than 1KV) device capacitor is small (is less than
20PF)。
Utility model content
In order to solve the above technical problems, the utility model uses following technical solution：
A kind of two-way TVS chips with series connection TSS, a low capacitance TSS chips and a TVS cores including overlapping up and down
Piece, the low capacitance TSS chips and the TVS chips upper and lower surface are respectively together with frame welding, and intermediate frame is
The low capacitance TSS chips and the TVS chips share.
The low capacitance TSS chips refer to that chip capacity is less than the chip of 20PF.
The TVS device is that capacitance range is 1-20PF, and Surge handling capability reaches TVS device (the 8-20 waveforms of more than 1KV
2 Ω inner walkways).
The frame of the centre could alternatively be copper sheet.
The manufacturing method of the above-mentioned two-way TVS device with series connection TSS, including：
Step A：TVS chips are bonded with lower frame with solder；
Step B：It is bonded in TSS chips and upper frame with solder；
Step C：Carry out Reflow Soldering solidified solder；
Step D：TVS chips and TSS chips are overlapped successively, frame or copper sheet are inserted among device and carried out using weld tabs
Connection；
Step E：Reflow Soldering is cured；
Step F：Plastic packaging, test.
The beneficial effects of the utility model are：The utility model uses low capacitance TSS chips and high-power TVS chip-in series
It realizes two-way negative resistance charactertistic, while low capacitance is realized has strong Surge handling capability；The utility model can frequency compared with
It is used on high circuit, and there is the advantages of encapsulation volume is small, at low cost, reliability is high.
Description of the drawings
Fig. 1 is the status diagram of manufacturing method step A of the low-capacitance bidirectional of the utility model with negative resistance TVS device.
Fig. 2 is the status diagram of manufacturing method step B of the low-capacitance bidirectional of the utility model with negative resistance TVS device.
Fig. 3 is the status diagram of manufacturing method step D of the low-capacitance bidirectional of the utility model with negative resistance TVS device.
Specific embodiment
Two-way TVS device with series connection TSS of the utility model and preparation method thereof is carried out below in conjunction with the accompanying drawings detailed
It describes in detail bright.
As shown in Figs. 1-3, the two-way TVS device with series connection TSS of the utility model includes the low electricity overlapped up and down
Hold TSS chips 400 and a TVS chips 100, low capacitance TSS chips and TVS chips upper and lower surface weld respectively with frame 200,500
It is connected together, and intermediate frame 600 is shared for low capacitance TSS chips and TVS chips.
Low capacitance TSS chips refer to chip capacity be less than 20PF chip.
TVS device is that capacitance range is 1-20PF, and Surge handling capability reaches TVS device (2 Ω of 8-20 waveforms of more than 1KV
Inner walkway).
Intermediate frame could alternatively be copper sheet.
Its preparation process as shown in Figs. 1-3, including：
Step A：TVS chips 100 are bonded with lower frame 200 with solder 300；
Step B：It is bonded in TSS chips 400 and upper frame 500 with solder 300；
Step C：Carry out Reflow Soldering solidified solder；
Step D：TVS chips and TSS chips are overlapped successively, frame or copper sheet 600 are inserted among device and use weld tabs
It is attached；
Step E：Reflow Soldering is cured；
Step F：Plastic packaging, test.
In a preferred embodiment of the utility model, in step A：The TVS chip spaces of a whole page used are 4.0mm, work
Voltage is 48V.
In a preferred embodiment of the utility model, in step B：The TSS chip spaces of a whole page used are 1.4mm, work
Voltage is 8V, capacitance 18PF.
In a preferred embodiment of the utility model, in step C：The Reflow Soldering temperature used is 260 DEG C.
In a preferred embodiment of the utility model, in step D：Using size and the matched weld tabs of chip carry out with
Intermediate isolating copper sheet is welded, and intermediate isolating copper sheet area and large chip are area matched.
In a preferred embodiment of the utility model, Reflow Soldering temperature is 220 DEG C in step E.
In a preferred embodiment of the utility model, in step F：What is used is encapsulated as SMC encapsulation, device antisurge
Ability reaches more than 1KV, and device capacitor reaches 20PF hereinafter, two-way antisurge, band negative resistance charactertistic.
The utility model is elaborated above, but described above, only the preferable embodiment of the utility model,
The range of the utility model implementation should not be limited.That is, every equivalence changes made according to application scope of the utility model with
Modification etc., should all still fall in the patent covering scope of the utility model.
Claims (4)
1. a kind of two-way TVS device with series connection TSS, which is characterized in that low capacitance TSS chips including overlapping up and down and
One TVS device, the low capacitance TSS chips and the TVS device upper and lower surface are and intermediate respectively together with frame welding
Frame is shared for the low capacitance TSS chips and the TVS device.
2. the two-way TVS device according to claim 1 with series connection TSS, which is characterized in that the low capacitance TSS
Chip refers to that chip capacity is less than the chip of 20PF.
3. the two-way TVS device according to claim 1 with series connection TSS, which is characterized in that the TVS device is electricity
Hold ranging from 1-20PF, Surge handling capability reaches the TVS device of more than 1KV.
4. the two-way TVS device according to claim 1 with series connection TSS, which is characterized in that the frame of the centre can
To replace with copper sheet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721485595.XU CN207602569U (en) | 2017-11-09 | 2017-11-09 | A kind of low-capacitance bidirectional band negative resistance TVS device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721485595.XU CN207602569U (en) | 2017-11-09 | 2017-11-09 | A kind of low-capacitance bidirectional band negative resistance TVS device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207602569U true CN207602569U (en) | 2018-07-10 |
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ID=62757840
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721485595.XU Active CN207602569U (en) | 2017-11-09 | 2017-11-09 | A kind of low-capacitance bidirectional band negative resistance TVS device |
Country Status (1)
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| CN (1) | CN207602569U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108428697A (en) * | 2017-11-09 | 2018-08-21 | 上海长园维安微电子有限公司 | A kind of low-capacitance bidirectional band negative resistance TVS device |
-
2017
- 2017-11-09 CN CN201721485595.XU patent/CN207602569U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108428697A (en) * | 2017-11-09 | 2018-08-21 | 上海长园维安微电子有限公司 | A kind of low-capacitance bidirectional band negative resistance TVS device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: Seven road 201202 Shanghai Pudong New Area Shiwan No. 1001 Patentee after: Shanghai Wei'an Semiconductor Co., Ltd Address before: 201202 Shanghai city Pudong New Area Town Road No. 1001 to seven Shiwan Building 2 Patentee before: Shanghai Changyuan Wayon Microelectronics Co., Ltd. |