CN201754503U - Transient voltage suppressor - Google Patents
Transient voltage suppressor Download PDFInfo
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- CN201754503U CN201754503U CN201020129256XU CN201020129256U CN201754503U CN 201754503 U CN201754503 U CN 201754503U CN 201020129256X U CN201020129256X U CN 201020129256XU CN 201020129256 U CN201020129256 U CN 201020129256U CN 201754503 U CN201754503 U CN 201754503U
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Abstract
A transient voltage suppressor comprises a rectifying diode with a P pole surface and an N pole surface, a first copper lead and a second copper lead. The P pole surface or N pole surface of the rectifying diode is connected with a P pole surface or N pole surface of a transient voltage suppression diode through soldering tin, one end of the first copper lead is connected to the N pole surface or P pole surface of the transient voltage suppression diode through soldering tin, the other end of the first copper lead is adopted as a cathode terminal or anode terminal of the transient voltage suppressor, one end of the second copper lead is connected to the N pole surface of P pole surface of the rectifying diode through soldering tin, and the other end of the second copper lead is adopted as an anode terminal or cathode terminal of the transient voltage suppressor. The transient voltage suppressor reduces junction capacitance, and greatly increases high-frequency property.
Description
Technical field
The utility model relates to a kind of Transient Voltage Suppressor, belongs to the semiconductor components and devices field.
Background technology
Transient Voltage Suppressor is a kind of semiconductor components and devices that is used for protection device; shown in accompanying drawing 1-3; when the two poles of the earth of Transient Voltage Suppressor are subjected to reverse transient state high energy impact events; it can be with 10 the speed of bearing 12 power second-times; the high impedance of its two interpolar is become Low ESR, absorb the surge power up to thousands of watts, the voltage clamp that makes two interpolars is in a predetermined value; protect the precision components in the electronic circuit effectively, avoid the damage of various surge pulses.Because it has fast, advantage such as transient power is big, leakage current is low, puncture voltage deviation, clamping voltage are more easy to control, do not have the limit of damage, volume is little of response time.Be widely used in computer system at present; communication apparatus; the AC/DC power supply; automobile; electric ballast; household electrical appliance; instrument and meter (kilowatt-hour meter); RS232/422/423/485; I/O; LAN; ISDN; ADSL; USB; MP3; PDAS; GPS; CDMA; GSM; the protection of digital camera; the common mode protection; RF coupling/IC drives and receives protection; the motor electromagnetic wave interference suppresses; the audio/video input; transducer/speed changer; the industry control loop; relay; the every field such as inhibition of contactor noise.
Existing Transient Voltage Suppressor has higher junction capacitance C
j, the typical Cj of 400W SMAJ series as shown in Figure 3:
When being used in HF link, so high C
jForm oscillation circuit with the inductance in the circuit, will influence the operate as normal of protected device;
As when being used for following route protection, just need with low junction capacitance TVS:
1) high speed data lines protection;
2) USB port protection;
3) portable set protection;
4) local area network (LAN) and broadband networks equipment protection;
5) switching system protection and Ethernet switch protection.
Therefore how making the Transient Voltage Suppressor of low junction capacitance, is the problem of the utility model research.
Summary of the invention
The utility model provides a kind of Transient Voltage Suppressor of low junction capacitance, its objective is that the junction capacitance that will solve existing Transient Voltage Suppressor is higher, the technical problem that high frequency performance is relatively poor.
For achieving the above object, first technical scheme that the utility model adopts is: a kind of Transient Voltage Suppressor comprises:
Transient voltage suppresses diode, and it has P pole-face and N pole-face,
Rectifier diode, it has P pole-face and N pole-face, and wherein the P pole-face of this rectifier diode is connected with the P pole-face that described transient voltage suppresses diode by scolding tin,
First bronze medal lead-in wire, an end of this first bronze medal lead-in wire is connected to the N pole-face that described transient voltage suppresses diode by scolding tin, and the other end of first bronze medal lead-in wire is as the cathode terminal of described Transient Voltage Suppressor;
Second bronze medal lead-in wire, an end of this second bronze medal lead-in wire is connected to the N pole-face of described rectifier diode by scolding tin, and the other end of second bronze medal lead-in wire is as the anode terminal of described Transient Voltage Suppressor.
For achieving the above object, second technical scheme that the utility model adopts is: a kind of Transient Voltage Suppressor comprises:
Transient voltage suppresses diode, and it has P pole-face and N pole-face,
Rectifier diode, it has P pole-face and N pole-face, and wherein the N pole-face of this rectifier diode is connected with the N pole-face that described transient voltage suppresses diode by scolding tin,
First bronze medal lead-in wire, an end of this first bronze medal lead-in wire is connected to the P pole-face that described transient voltage suppresses diode by scolding tin, and the other end of first bronze medal lead-in wire is as the anode terminal of described Transient Voltage Suppressor;
Second bronze medal lead-in wire, an end of this second bronze medal lead-in wire is connected to the P pole-face of described rectifier diode by scolding tin, and the other end of second bronze medal lead-in wire is as the cathode terminal of described Transient Voltage Suppressor.
Because the technique scheme utilization, the utility model compared with prior art has following advantage:
On the one hand, stack by chip, simple realization low junction capacitance diode and transient voltage suppress connecting of diode TVS chip, improved the high frequency performance of Transient Voltage Suppressor, on the other hand, at first, technology is simple: suppress diode TVS with single transient voltage and compare, only increase a crystal grain filling and a weld tabs filling; Secondly, cost is lower, and suppress diode TVS with single transient voltage and compare, mainly be to have increased cheap common rectifier diode.
Description of drawings
Accompanying drawing 2 is existing Transient Voltage Suppressor structure chart;
Accompanying drawing 3 is existing Transient Voltage Suppressor performance test figure;
Accompanying drawing 4 is first kind of schematic structure diagram of the utility model Transient Voltage Suppressor;
Accompanying drawing 5 is first kind of scheme principle schematic of the utility model Transient Voltage Suppressor;
Accompanying drawing 6 is second kind of schematic structure diagram of the utility model Transient Voltage Suppressor;
Accompanying drawing 7 is second kind of scheme principle schematic of the utility model Transient Voltage Suppressor.
In the above accompanying drawing: 1, transient voltage suppresses diode; 2, rectifier diode; 3, scolding tin; 4, first bronze medal lead-in wire; 5, second bronze medal lead-in wire.
Embodiment
Below in conjunction with drawings and Examples the utility model is further described:
Embodiment one: a kind of Transient Voltage Suppressor comprises:
Transient voltage suppresses diode 1, and it has P pole-face and N pole-face,
Rectifier diode 2, it has P pole-face and N pole-face, and wherein the P pole-face of this rectifier diode 2 is connected with the P pole-face that described transient voltage suppresses diode 1 by scolding tin 3,
First bronze medal lead-in wire 4, an end of this first bronze medal lead-in wire 4 is connected to the N pole-face that described transient voltage suppresses diode 1 by scolding tin 3, and the other end of first bronze medal lead-in wire 4 is as the cathode terminal of described Transient Voltage Suppressor;
Second bronze medal lead-in wire 5, an end of this second bronze medal lead-in wire 5 is connected to the N pole-face of described rectifier diode 2 by scolding tin 3, and the other end of second bronze medal lead-in wire 5 is as the anode terminal of described Transient Voltage Suppressor.Junction capacitance reduces the principle explanation:
It is as follows to calculate total junction capacitance according to the capacitances in series principle:
Be superposed to example with P4KE6.8A and 1N4004G:
The C of P4KE6.8A
1=1500pF (representative value);
The C of 1N4004G
2=7pF; C
(always)=7*1500/ (7+1500)=6.97pF;
Selecting for use of rectifier diode 2: it is IPPM (Maximum Peak Impulse Current) value of TVS that the forward surge capacity IFSM (forward peak inrush current) of rectifier diode 2 must meet or exceed transient voltage inhibition diode 1;
Embodiment two: a kind of Transient Voltage Suppressor comprises:
Transient voltage suppresses diode 1, and it has P pole-face and N pole-face,
Rectifier diode 2, it has P pole-face and N pole-face, and wherein the N pole-face of this rectifier diode 2 is connected with the N pole-face that described transient voltage suppresses diode 1 by scolding tin 3,
First bronze medal lead-in wire 4, an end of this first bronze medal lead-in wire 4 is connected to the P pole-face that described transient voltage suppresses diode 1 by scolding tin 3, and the other end of first bronze medal lead-in wire 4 is as the anode terminal of described Transient Voltage Suppressor;
Second bronze medal lead-in wire 5, an end of this second bronze medal lead-in wire 5 is connected to the P pole-face of described rectifier diode 2 by scolding tin 3, and the other end of second bronze medal lead-in wire 5 is as the cathode terminal of described Transient Voltage Suppressor.It is as follows to calculate total junction capacitance according to the capacitances in series principle:
Be superposed to example with P4KE6.8A and 1N4004G:
The C of P4KE6.8A
1=1500pF (representative value);
The C of 1N4004G
2=7pF; C
(always)=7*1500/ (7+1500)=6.97pF;
Selecting for use of rectifier diode 2: it is IPPM (Maximum Peak Impulse Current) value of TVS that the forward surge capacity IFSM (forward peak inrush current) of rectifier diode 2 must meet or exceed transient voltage inhibition diode 1;
The foregoing description only is explanation technical conceive of the present utility model and characteristics, and its purpose is to allow the personage who is familiar with this technology can understand content of the present utility model and enforcement according to this, can not limit protection range of the present utility model with this.All equivalences of being done according to the utility model spirit change or modify, and all should be encompassed within the protection range of the present utility model.
Claims (2)
1. Transient Voltage Suppressor is characterized in that: comprising:
Transient voltage suppresses diode (1), and it has P pole-face and N pole-face,
Rectifier diode (2), it has P pole-face and N pole-face, and wherein the P pole-face of this rectifier diode (2) is connected with the P pole-face that described transient voltage suppresses diode (1) by scolding tin (3),
First bronze medal lead-in wire (4), an end of this first bronze medal lead-in wire (4) is connected to the N pole-face that described transient voltage suppresses diode (1) by scolding tin (3), and the other end of first bronze medal lead-in wire (4) is as the cathode terminal of described Transient Voltage Suppressor;
Second bronze medal lead-in wire (5), an end of this second bronze medal lead-in wire (5) is connected to the N pole-face of described rectifier diode (2) by scolding tin (3), and second bronze medal goes between the other end of (5) as the anode terminal of described Transient Voltage Suppressor.
2. Transient Voltage Suppressor is characterized in that: comprising:
Transient voltage suppresses diode (1), and it has P pole-face and N pole-face,
Rectifier diode (2), it has P pole-face and N pole-face, and wherein the N pole-face of this rectifier diode (2) is connected with the N pole-face that described transient voltage suppresses diode (1) by scolding tin (3),
First bronze medal lead-in wire (4), an end of this first bronze medal lead-in wire (4) is connected to the P pole-face that described transient voltage suppresses diode (1) by scolding tin (3), and the other end of first bronze medal lead-in wire (4) is as the anode terminal of described Transient Voltage Suppressor;
Second bronze medal lead-in wire (5), an end of this second bronze medal lead-in wire (5) is connected to the P pole-face of described rectifier diode (2) by scolding tin (3), and second bronze medal goes between the other end of (5) as the cathode terminal of described Transient Voltage Suppressor.
Priority Applications (1)
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CN201020129256XU CN201754503U (en) | 2010-03-03 | 2010-03-03 | Transient voltage suppressor |
Applications Claiming Priority (1)
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CN201020129256XU CN201754503U (en) | 2010-03-03 | 2010-03-03 | Transient voltage suppressor |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102709333A (en) * | 2012-06-16 | 2012-10-03 | 中国振华集团永光电子有限公司 | Low-capacity glass solid packaged silicon transient voltage suppressor and manufacturing method thereof |
CN102709276A (en) * | 2012-06-16 | 2012-10-03 | 中国振华集团永光电子有限公司 | Low-capacity metal packaged silicon transient voltage suppressor and manufacturing method thereof |
CN108122994A (en) * | 2017-12-20 | 2018-06-05 | 中国振华集团永光电子有限公司(国营第八三七厂) | A kind of high-power ultra-low capacitance transient voltage suppressor diode |
CN108630589A (en) * | 2014-12-22 | 2018-10-09 | 苏州固锝电子股份有限公司 | Transfer device for improving semiconductor devices yield |
CN111987067A (en) * | 2020-07-30 | 2020-11-24 | 吉林华微电子股份有限公司 | Device lead assembly and semiconductor device |
-
2010
- 2010-03-03 CN CN201020129256XU patent/CN201754503U/en not_active Expired - Lifetime
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102709333A (en) * | 2012-06-16 | 2012-10-03 | 中国振华集团永光电子有限公司 | Low-capacity glass solid packaged silicon transient voltage suppressor and manufacturing method thereof |
CN102709276A (en) * | 2012-06-16 | 2012-10-03 | 中国振华集团永光电子有限公司 | Low-capacity metal packaged silicon transient voltage suppressor and manufacturing method thereof |
CN102709276B (en) * | 2012-06-16 | 2014-11-12 | 中国振华集团永光电子有限公司 | Low-capacity metal packaged silicon transient voltage suppressor and manufacturing method thereof |
CN108630589A (en) * | 2014-12-22 | 2018-10-09 | 苏州固锝电子股份有限公司 | Transfer device for improving semiconductor devices yield |
CN108630589B (en) * | 2014-12-22 | 2020-12-08 | 苏州固锝电子股份有限公司 | Transfer mechanism for improving yield of semiconductor device |
CN108122994A (en) * | 2017-12-20 | 2018-06-05 | 中国振华集团永光电子有限公司(国营第八三七厂) | A kind of high-power ultra-low capacitance transient voltage suppressor diode |
CN108122994B (en) * | 2017-12-20 | 2024-07-02 | 中国振华集团永光电子有限公司(国营第八三七厂) | High-power ultralow-capacitance transient voltage suppression diode |
CN111987067A (en) * | 2020-07-30 | 2020-11-24 | 吉林华微电子股份有限公司 | Device lead assembly and semiconductor device |
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Granted publication date: 20110302 |
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CX01 | Expiry of patent term |