CN206697523U - A kind of power-type uv-LED device - Google Patents
A kind of power-type uv-LED device Download PDFInfo
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- CN206697523U CN206697523U CN201720545087.XU CN201720545087U CN206697523U CN 206697523 U CN206697523 U CN 206697523U CN 201720545087 U CN201720545087 U CN 201720545087U CN 206697523 U CN206697523 U CN 206697523U
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Abstract
This application discloses a kind of power-type uv-LED device; including heat-radiating substrate and the LED chip being inverted on the heat-radiating substrate; the heat-radiating substrate includes base; the susceptor surface is fixed with least one layer of composite bed being made up of aln layer and metal wiring layer; the composite bed is offering first through hole on the direction of the susceptor surface, and the exterior static that and out-phase in parallel with the LED chip is connected is provided with the first through hole and protects module.Above-mentioned power-type uv-LED device, not only amount of light is bigger, heat dispersion is more superior, additionally it is possible to reduces harm of the Electro-static Driven Comb to LED chip in encapsulation and assembling process, and causes global failure after can avoiding the electrostatic protection diode damage of single structure.
Description
Technical field
The utility model belongs to LED light source component technical field, more particularly to a kind of power-type uv-LED device.
Background technology
With the development of technology, the performance of ultraviolet LED is constantly lifted, with currently used gas ultraviolet source phase
Compare, ultraviolet LED belongs to cold light source, has uniform long lifespan, reliability height, irradiation brightness, efficiency high and without Toxic
The advantages of matter, all have in the fields such as biologic medical, surface disinfection cleaning, printing lithographic, photocuring production and communication detecting
Play the role of important.At present during LED is prepared, the material such as substrate template and epitaxial layer exists in growth
The defects of face crack, crystal mass are poor, structural material difficult design, and during the weldering of later stage eutectic and reverse installation process, also deposit
High-power LED chip size is big, heat production is more, SiO2Layer weak heat-dissipating, etching area is big and causes light-emitting area small, luminous strong
It is not high and electric leakage be present, the problems such as voltage surge, Electro-static Driven Comb endanger to spend low, brightness, LED sandwich construction also be present
The total internal reflection loss of middle DUV, and electrode pair light absorption and cause light extraction efficiency poor, or even there is LED core
Piece occurs phenomena such as performance drastically deteriorates because of ultraviolet light, hence it is evident that shortens the service life of LED component, reduces reliable
Property.
Utility model content
To solve the above problems, the utility model provides a kind of power-type uv-LED device, not only amount of light it is bigger,
Heat dispersion is more superior, additionally it is possible to reduces harm of the Electro-static Driven Comb to LED chip in encapsulation and assembling process, and can avoid list
Global failure is caused after the electrostatic protection diode damage of one structure.
A kind of power-type uv-LED device provided by the utility model, including heat-radiating substrate and it is inverted in the radiating
LED chip on substrate, the heat-radiating substrate include base, and the susceptor surface is fixed with least one layer by aln layer and gold
Belong to the composite bed of wiring layer composition, the composite bed is offering first through hole on the direction of the susceptor surface, institute
State and the exterior static protection module that and out-phase in parallel with the LED chip is connected is provided with first through hole.
Preferably, in above-mentioned power-type uv-LED device, the exterior static protection module exists for lateral deposition successively
N-contact layer and P type contact layer inside the first through hole, or, n-contact layer, P type contact layer and n-contact layer.
Preferably, in above-mentioned power-type uv-LED device, the composite bed is sequentially fixed at using conductive silver paste
The first aln layer, the first metal wiring layer, the second aln layer and the second metal wiring layer of the susceptor surface.
Preferably, in above-mentioned power-type uv-LED device, in first aln layer and second aln layer
Multiple the second miniature through holes therethrough are provided with, and are provided with inside second through hole for making different hardware cloths
Line layer realizes the metal level of electrical connection.
Preferably, in above-mentioned power-type uv-LED device, the LED chip includes being successively set on sapphire material
Substrate floor on aluminum nitride buffer layer, nucleating layer, n-type AlGaN layer, current extending, Quantum well active district, electronic blocking
Layer, p-type AlGaN layer, p-type GaN layer, reflecting layer, conductive membrane layer and the passivation layer for surrounding above layers peripheral part, it is described blunt
Change the bottom up until the bottom surface in the reflecting layer opens up out a P electrode of layer, and the passivation layer it is bottom up until
The bottom surface of the n-type AlGaN layer opens up out at least one N electrode.
Preferably, in above-mentioned power-type uv-LED device, the reflecting layer is silver layer or nickel alumin(i)um alloy layer.
Preferably, in above-mentioned power-type uv-LED device, the base is carbonization silicon submount or ceramic base.
Preferably, in above-mentioned power-type uv-LED device, the P electrode and the N electrode are antimony aluminium alloy electric
Pole.
By foregoing description, above-mentioned power-type uv-LED device provided by the utility model, due to including the base that radiates
Plate and the LED chip being inverted on the heat-radiating substrate, the heat-radiating substrate include base, the susceptor surface be fixed with to
Few one layer of composite bed being made up of aln layer and metal wiring layer so that heat dispersion is more preferable, and the composite bed is hanging down
Directly in offering first through hole on the direction of the susceptor surface, it is provided with the first through hole in parallel with the LED chip
And out-phase connection exterior static protection module, therefore can reduce encapsulation and assembling process in Electro-static Driven Comb to LED chip
Harm, and cause global failure after the electrostatic protection diode damage of single structure can be avoided.
Brief description of the drawings
, below will be to embodiment in order to illustrate more clearly of the utility model embodiment or technical scheme of the prior art
Or the required accompanying drawing used is briefly described in description of the prior art, it should be apparent that, drawings in the following description are only
It is embodiment of the present utility model, for those of ordinary skill in the art, on the premise of not paying creative work, also
Other accompanying drawings can be obtained according to the accompanying drawing of offer.
Fig. 1 is the schematic diagram for the first power-type uv-LED device that the embodiment of the present application provides；
Fig. 2 is the connection diagram that exterior static protects module and LED chip.
Embodiment
Core concept of the present utility model is to provide a kind of power-type uv-LED device, and not only heat dispersion is more preferable, goes out
Light quantity is bigger, and can reduce harm of the Electro-static Driven Comb to LED chip in encapsulation and assembling process, and can avoid single knot
Global failure is caused after the electrostatic protection diode damage of structure.
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the embodiment of the utility model is carried out
Clearly and completely describing, it is clear that described embodiment is only the utility model part of the embodiment, rather than whole
Embodiment.Based on the embodiment in the utility model, those of ordinary skill in the art are not under the premise of creative work is made
The every other embodiment obtained, belong to the scope of the utility model protection.
The first power-type uv-LED device that the embodiment of the present application provides is as shown in figure 1, Fig. 1 is the embodiment of the present application
The schematic diagram of the first the power-type uv-LED device provided, the device include heat-radiating substrate 1 and are inverted in the radiating base
LED chip 2 on plate 1, the heat-radiating substrate include base 11, and the surface of base 11 is fixed with least one layer by aln layer
With the composite bed 12 of metal wiring layer composition, the composite bed 12 is offering the on the direction on the surface of base 11
One through hole 13, the exterior static protection module that and out-phase in parallel with the LED chip 2 be connected is provided with the first through hole 13
14, specific equivalent circuit refer to Fig. 2, and Fig. 2 is the connection diagram that exterior static protects module and LED chip, in figure with
NPN type module is illustrated, but is actually not limited in this scheme.
It is it should be noted that quiet during said external electrostatic protection module 14 is set, encapsulation can be reduced and assemble etc.
Influence of the electricity release to chip, specifically, from integral device aspect, so directly increase static discharge current release
Path, the static discharge current by GaN base LED is bypassed, so as to protect LED from positive static discharge and reverse electrostatic
The influence of electric discharge stress.
By foregoing description, the first above-mentioned power-type uv-LED device of the embodiment of the present application offer, due to bag
Heat-radiating substrate and the LED chip being inverted on the heat-radiating substrate are included, the heat-radiating substrate includes base, the susceptor surface
It is fixed with least one layer of composite bed being made up of aln layer and metal wiring layer so that device heat dispersion is more preferable；It is described multiple
Close layer and first through hole is being offered on the direction of the susceptor surface, be provided with the first through hole and the LED
Chip is in parallel and the exterior static of out-phase connection protects module, therefore can reduce Electro-static Driven Comb pair in encapsulation and assembling process
The harm of LED chip, and cause global failure after the electrostatic protection diode damage of single structure can be avoided.
Second of power-type uv-LED device that the embodiment of the present application provides, is in the first above-mentioned power-type ultraviolet LED
On the basis of device, in addition to following technical characteristic：
The exterior static protection module is n-contact layer and p-type of the lateral deposition inside the first through hole successively
Contact layer, or, n-contact layer, P type contact layer and n-contact layer.
Specifically, n-type contact is sequentially provided with the post position of base plate heat radiation structure by using techniques such as redepositions
Layer and P type contact layer, or, n-contact layer, P type contact layer and n-contact layer, the spaced distribution of above contact layer, relatively
Form the electrostatic protection diode or NPN type triode structure at substrate with answering so that LED chip and the electrostatic of the outside
Protection module together form a complete loop, and this is two kinds of preferred schemes certainly, can also use other similar sides
Case, it is not construed as limiting herein.
The third power-type uv-LED device that the embodiment of the present application provides, is in the first above-mentioned power-type ultraviolet LED
On the basis of device, in addition to following technical characteristic：
With continued reference to Fig. 1, the composite bed 12 is sequentially fixed at the surface of base 11 using conductive silver paste 15
First aln layer 121, the first metal wiring layer 122, the second aln layer 123 and the second metal wiring layer 124.
That is, in the program, the multilayer being made up of metal wiring layer and AlN layers is positioned apart from board structure
Structure, in addition to being repeated twice, can also be not intended to limit for this two layers herein in triplicate or more, can be according to actual need
To set the corresponding number of plies.
The 4th kind of power-type uv-LED device that the embodiment of the present application provides, is in the third above-mentioned power-type ultraviolet LED
On the basis of device, in addition to following technical characteristic：
With continued reference to Fig. 1, multiple run through is provided with first aln layer 121 and second aln layer 123
The second miniature through hole 125 therein, and the inside of second through hole 125 is provided with for realizing different metal wiring layers
The metal level of electrical connection.
It should be noted that it can be seen that second through hole is just set at interval of certain distance, to ensure to dissipate
The uniformity of heat, in this case, the metal material in metal wiring layer is applied in AlN layers by second through hole,
This just effectively shortens heat transfer and thermal diffusion path so that radiating is accelerated, and optical output power further improves.
The 5th kind of power-type uv-LED device that the embodiment of the present application provides, be it is above-mentioned the first to the 4th kind of power
On the basis of any one of type uv-LED device, in addition to following technical characteristic：
With continued reference to Fig. 1, the LED chip 2 includes the nitridation being successively set on the substrate floor 201 of sapphire material
Aluminium cushion 202, nucleating layer 203, n-type AlGaN layer 204, current extending 205, Quantum well active district 206, electronic barrier layer
207th, p-type AlGaN layer 208, p-type GaN layer 209, reflecting layer 210, conductive membrane layer 211 and above layers peripheral parts is surrounded
Passivation layer 212, the passivation layer 212 it is bottom up until the bottom surface in the reflecting layer 210 opens up out a P electrode 213, and
The passivation layer 202 it is bottom up until the bottom surface of the n-type AlGaN layer 204 opens up out at least one N electrode 214.
Specifically, it can use but be not limited to following scheme：It is thick to include the thick Sapphire Substrates of 150um, 0.1um successively
Nucleating layer, the n-type AlGaN layer of 1um thickness, the current extending of 1um thickness, the Quantum well active district of 1um thickness, 0.1um thick electronics
Barrier layer, the p-type AlGaN layer of 50nm thickness, the p-type GaN layer of 150nm thickness, the reflecting layer of 0.1um thickness, 1um thick conductive membrane layer
And the passivation layer that 1um is thick, and substrate includes the thick conductive silver paste of the thick AlN layers of the thick metal wiring layers of 20um, 0.5mm, 1um
And the base that 1mm is thick.Wherein, the overall dimensions of the power-type UV LED chip are 1*1mm2, the size of substrate pedestal can be with
For 1.5*1.5mm2。
In the program, the epitaxial wafer substrate of the graphics-optimized design including roughening or uneven processing can be used
As template, to improve the quality of material and internal quantum efficiency, total reflection of the ultraviolet light in device inside is reduced, to obtain more
High light extraction efficiency, so as to lift the brightness of chip and light efficiency；Sapphire Substrate has very low reflection for ultraviolet light
Coefficient, it is possible to increase the light output intensity of LED chip.In the technique such as epitaxial layer structure growth and electrode fabrication, light is first passed through
Carve, ICP etching chip epitaxial layers, form internal reverse electrode structure；And by the mode such as being deposited, depositing so that n-type contacts
Layer, P type contact layer form electrical connection after being in contact with outer electrode salient point；It is thinned again, sliver, small core particles is divided
The operation such as choosing；Epitaxial chip carries out eutectic weldering bonding by contact materials such as electrode, metal salient point and metal wiring layers, its
In, exterior static protection structure is additionally provided with (at the first pupil) at the insulation runway in the middle part of base plate heat radiation structure, is then directly fallen
It is attached on the base plate heat radiation structure of insulation and forms complete encapsulating structure.Wherein, in not equality of temperature before and after epitaxial wafer growth technique
Spend under gradient by repeatedly annealing, increase the intensity of tack coat, reduce internal ohmic contact resistance, also improve core
The antistatic intensity of piece.
Above-mentioned Quantum well active district can accelerate carrier mobility speed, and photon numbers increase；And by setting electric current
Extension layer so that CURRENT DISTRIBUTION is more uniform, reduces amount of localized heat skewness phenomenon, and chip cooling is accelerated.By splashing
The conductive film of technique plating layer of transparent is penetrated or evaporates etc., the conductive membrane layer can select indium tin oxide material, the film layer
With high density characteristic, there is very high reflectivity, increase optical output power so that LED chip luminous efficiency is higher, simultaneously
Also there is less positive cut-in voltage and equivalent series resistance, current expansion faster and is resistant to high pressure stress, improves LED
Stability, in addition, the surface of electronic barrier layer set can carry out roughening treatment.
The program employs reverse P electrode and N electrode domain structure so that contact voltage reduces, and reduces voltage surge
Influence to LED, also make it that CURRENT DISTRIBUTION is more uniform, further increases internal quantum efficiency, so as to obtain higher light
Effect, while also assures that the reliability that long term device uses.By being respectively provided with one layer outside vertical cylinder shape structure electrode
The passivation layer of annular parcel, improves the current spreading problem of active area in epitaxial wafer, reduces electric current pile up effect, improve
The luminous power of device.And to carrying out burn into photoetching and deposition etc. on LED table top and at epitaxial layer structure mesa sidewall
Reason, and then all optimally deposit thickness is 1um passivation layer, it is therefore prevented that corrosion of the introduced contaminants to chip and reduce table top
With influence of the leakage current at mesa sidewall to chip.Now the outer surface of P electrode and N electrode is also uniformly provided with uniform blunt
Change layer, it is therefore prevented that the interior side-wall surface of metal electrode structure directly forms current loop with chip internal ohmic contact layer and caused
Short circuit.
Especially it is emphasized that when to above-mentioned passivation layer etching and deposition processes, by strictly controlling etch rate, really
Protect and deep etching only is carried out to seldom subregion of table top, reduced the etching to epitaxial wafer light-emitting zone and infringement, increased
The light-emitting area of chip, improves luminous intensity；By reverse design P electrode and N electrode, surge voltage is reduced to LED
Influence, improve reliability.Wherein, for power-type chip area is big, heat production is more, current expansion is uneven and weak heat-dissipating
The problems such as, optimally devise multiple N electrodes, it is contemplated that chip internal and middle part radiating not in time, and by P electrode and N electrode
It is arranged on the edge of table top.Wherein, the etching process of P electrode is only since the passivation layer of mesa top until exposing reflection
Untill layer, and then etching untill n-type AlGaN layer, forms a kind of internal ohmic contact type to N electrode since passivation layer
GaN base LED diode structures.
The 6th kind of power-type uv-LED device that the embodiment of the present application provides, is in above-mentioned 5th kind of power-type ultraviolet LED
On the basis of device, in addition to following technical characteristic：
The reflecting layer is silver layer or nickel alumin(i)um alloy layer, and the reflecting layer of these species can effectively improve the anti-of light
Penetrate rate and emitting brightness.
The 7th kind of power-type uv-LED device that the embodiment of the present application provides, be it is above-mentioned the first to the 4th kind of power
In type uv-LED device it is any on the basis of, in addition to following technical characteristic：
The base is carbonization silicon submount or ceramic base.
It should be noted that both thermal diffusivities it is excellent act as it is heat sink, with reference to highdensity metal wiring layer so that
Quantum well active district in LED inverted structures and it is heat sink between hot path shorten, LED chip radiating is accelerated, and it is defeated to improve light
Go out power, and effective protection is formed to chip, in order to avoid failed because of overheat.
The 8th kind of power-type uv-LED device that the embodiment of the present application provides, is in above-mentioned 5th kind of power-type ultraviolet LED
On the basis of device, in addition to following technical characteristic：
The P electrode and the N electrode are antimony aluminum alloy anode.
In this case, the aluminium of electrode bottom surface forms a species mirror structure, reduces at electrode edge to portion
The absorption of light splitter, add the extraction to substrate marginal ray.
In summary, due to using upside-down mounting eutectic welding technology in scheme above, in the absence of bond pad or gold thread, therefore
LED light output intensity is improved, and the service life of flip LED can be extended.Above-mentioned power-type uv-LED device has
Energy-conserving and environment-protective, anticreep, luminous intensity is high, antistatic release infringement, voltage surge is small, rapid heat dissipation and high efficient and reliable etc. are excellent
Point.
The foregoing description of the disclosed embodiments, professional and technical personnel in the field are enable to realize or new using this practicality
Type.A variety of modifications to these embodiments will be apparent for those skilled in the art, determine herein
The General Principle of justice can be realized in other embodiments in the case where not departing from spirit or scope of the present utility model.Cause
This, the utility model is not intended to be limited to the embodiments shown herein, and is to fit to and principles disclosed herein
The most wide scope consistent with features of novelty.
Claims (8)
1. a kind of power-type uv-LED device, including heat-radiating substrate and the LED chip that is inverted on the heat-radiating substrate, its
It is characterised by, the heat-radiating substrate includes base, and the susceptor surface is fixed with least one layer by aln layer and metal line
The composite bed of layer composition, the composite bed are offering first through hole on the direction of the susceptor surface, and described first
The exterior static that and out-phase in parallel with the LED chip is connected is provided with through hole and protects module.
2. power-type uv-LED device according to claim 1, it is characterised in that exterior static protection module is
N-contact layer and P type contact layer of the lateral deposition inside the first through hole successively, or, n-contact layer, P type contact layer
And n-contact layer.
3. power-type uv-LED device according to claim 1, it is characterised in that the composite bed is using conduction
Silver paste is sequentially fixed at the first aln layer, the first metal wiring layer, the second aln layer and the second gold medal of the susceptor surface
Belong to wiring layer.
4. power-type uv-LED device according to claim 3, it is characterised in that first aln layer and described
Multiple the second miniature through holes therethrough are provided with second aln layer, and is provided with and is used for inside second through hole
Different metal wiring layers is set to realize the metal level of electrical connection.
5. according to the power-type uv-LED device described in claim any one of 1-4, it is characterised in that the LED chip includes
Be successively set on aluminum nitride buffer layer on the substrate floor of sapphire material, nucleating layer, n-type AlGaN layer, current extending,
Quantum well active district, electronic barrier layer, p-type AlGaN layer, p-type GaN layer, reflecting layer, conductive membrane layer and encirclement above layers
The passivation layer of peripheral part, the passivation layer it is bottom up until the bottom surface in the reflecting layer opens up out a P electrode and described
Passivation layer it is bottom up until the bottom surface of the n-type AlGaN layer opens up out at least one N electrode.
6. power-type uv-LED device according to claim 5, it is characterised in that the reflecting layer is silver layer or nickel aluminium
Alloy-layer.
7. according to the power-type uv-LED device described in claim any one of 1-4, it is characterised in that the base is carbonization
Silicon submount or ceramic base.
8. power-type uv-LED device according to claim 5, it is characterised in that the P electrode and the N electrode are equal
For antimony aluminum alloy anode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201720545087.XU CN206697523U (en) | 2017-05-16 | 2017-05-16 | A kind of power-type uv-LED device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201720545087.XU CN206697523U (en) | 2017-05-16 | 2017-05-16 | A kind of power-type uv-LED device |
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| CN206697523U true CN206697523U (en) | 2017-12-01 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106981563A (en) * | 2017-05-16 | 2017-07-25 | 广东工业大学 | A kind of power-type uv-LED device |
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2017
- 2017-05-16 CN CN201720545087.XU patent/CN206697523U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106981563A (en) * | 2017-05-16 | 2017-07-25 | 广东工业大学 | A kind of power-type uv-LED device |
| CN106981563B (en) * | 2017-05-16 | 2023-11-14 | 广东工业大学 | Power type ultraviolet LED device |
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