CN206672916U - Big current semiconductor device - Google Patents
Big current semiconductor device Download PDFInfo
- Publication number
- CN206672916U CN206672916U CN201720164445.2U CN201720164445U CN206672916U CN 206672916 U CN206672916 U CN 206672916U CN 201720164445 U CN201720164445 U CN 201720164445U CN 206672916 U CN206672916 U CN 206672916U
- Authority
- CN
- China
- Prior art keywords
- chip
- shaped metal
- metal pad
- side pin
- several
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 122
- 229910052751 metal Inorganic materials 0.000 claims abstract description 122
- 239000006071 cream Substances 0.000 claims abstract description 16
- 238000005253 cladding Methods 0.000 claims abstract description 14
- 239000003822 epoxy resin Substances 0.000 claims abstract description 14
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 14
- 238000003860 storage Methods 0.000 claims abstract description 14
- 241000218202 Coptis Species 0.000 claims abstract description 12
- 235000002991 Coptis groenlandica Nutrition 0.000 claims abstract description 12
- 239000011521 glass Substances 0.000 claims description 27
- 238000007373 indentation Methods 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000004021 metal welding Methods 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 239000004593 Epoxy Substances 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 230000017525 heat dissipation Effects 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 238000005538 encapsulation Methods 0.000 description 4
- 230000009977 dual effect Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 2
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The utility model discloses a kind of big current semiconductor device, including the first chip, the second chip, the first L-shaped metal pad, the second L-shaped metal pad, several left side pins, several right side pins and epoxy resin cladding；Some first gold thread both ends electrically connect with the first chip, the second chip and left side pin respectively, some second gold thread both ends electrically connect with the first chip, the second chip and right side pin respectively, the first L-shaped metal pad, the second L-shaped metal pad upper surface are provided with the annular storage cream groove of a closure along edge, the cross sectional shape that this annular stores up cream groove is inverted trapezoidal, and this annular storage cream groove is located at the fringe region of the first chip, the second chip underface and close chip.The utility model is advantageous to pin and metal pad being more firmly fixed, and improves the reliability welded between PCB, exposed metal pad, so that chip quickly conducts heat, good heat dissipation effect at work.
Description
Technical field
A kind of chip-packaging structure is the utility model is related to, is related to technical field of semiconductors.
Background technology
The design of IC devices is according to circuit theory diagrams, realizes the function required for circuit designers.It is referred mainly to
Layout design is, it is necessary to consider the layout of external connection, and the optimization of internal electronic element is laid out, the optimization cloth of metal connecting line and through hole
The various factors such as office, electromagnetic protection, heat dissipation.Outstanding IC devices design can save production cost, reach good circuit
Performance and heat dispersion.Pad is most normal contact and most important concept, the pad type of selection element in the design of IC devices
Consider the factors such as shape, size, arrangement form, vibration and heated situation, the Impact direction of the element.Prior art is held
The problems such as easily causing device missing solder, rosin joint.
The content of the invention
The utility model purpose is to provide a kind of big current semiconductor device, and the big current semiconductor device is in an encapsulation
Two chips need to isolating are encapsulated in structure, realize dual chip encapsulation function, and are advantageous to pin and metal pad more
It is firmly fixed, improves the reliability welded between PCB.
To reach above-mentioned purpose, the technical solution adopted in the utility model is：A kind of big current semiconductor device, including the
One chip, the second chip, the first L-shaped metal pad, the second L-shaped metal pad, several left side pins, several right side pins
With epoxy resin cladding；
The first L-shaped metal pad, the second L-shaped metal pad by slide glass area and are connected at the top of slide glass area one end
Rod-type extension forms, and the slide glass area of the first L-shaped metal pad is embedded in the indentation, there of the second L-shaped metal pad, and described the
The slide glass area of two L-shaped metal pads is embedded in the indentation, there of the first L-shaped metal pad；
First chip, the second chip are fixed on the first L-shaped metal pad, the second L-shaped gold by the glue-line that insulate respectively
Belong to the middle section of pad respective slide glass area upper surface, be arranged at the first core several left side pin spacing side by side
The left side of piece, the second chip, it is arranged at the first chip, the right side of the second chip several right side pin spacing side by side,
The first L-shaped metal pad, the second L-shaped metal pad its lower edge are provided with the first gap slot, the left side pin with
The opposite medial extremity bottom of first L-shaped metal pad, the second L-shaped metal pad is provided with the second gap slot, the right side pin with
The opposite medial extremity bottom of first L-shaped metal pad, the second L-shaped metal pad is provided with the 3rd gap slot, the epoxy resin bag
Cover body and be coated on chip, the first L-shaped metal pad, the second L-shaped metal pad, several left side pins, several right side pins
On, the first L-shaped metal pad, the second L-shaped metal pad, left side pin and the respective lower surface of right side pin expose ring
The bottom of oxygen tree fat cladding；
Some first gold thread both ends electrically connect with the first chip, the second chip and left side pin respectively, some second
Gold thread both ends electrically connect with the first chip, the second chip and right side pin respectively, the first L-shaped metal pad, the second L-shaped gold
Category pad upper surface is provided with the annular storage cream groove of a closure along edge, and the cross sectional shape of this annular storage cream groove is inverted trapezoidal, this
Annular storage cream groove is located at the fringe region of the first chip, the second chip underface and close chip；The left side pin, right side are drawn
The metal-coated coating in lower surface of pin, the coat of metal are 1 with the thickness ratio of left side pin or right side pin：8~10.
Further improved scheme is as follows in above-mentioned technical proposal：
In such scheme, the number of the left side pin and right side pin is 3 ~ 10.
In such scheme, the coat of metal is tin layers or NiPdAu layer.
Because above-mentioned technical proposal is used, the utility model has following advantages compared with prior art：
1. the utility model big current semiconductor device, its first chip, the second chip, the first L-shaped metal pad,
Two L-shaped metal pads, several left side pins, several right side pins and epoxy resin cladding, the first L-shaped metal pad,
Second L-shaped metal pad forms by slide glass area and the rod-type extension being connected at the top of slide glass area one end, the first L-shaped gold
The slide glass area for belonging to pad is embedded in the indentation, there of the second L-shaped metal pad, the slide glass area insertion first of the second L-shaped metal pad
The indentation, there of L-shaped metal pad；Because being provided with Liang Ge slide glasses area, two cores that need to isolate are encapsulated in an encapsulating structure
Piece, realize dual chip encapsulation function.
2. the utility model big current semiconductor device, its metal pad its lower edge is provided with the first gap slot, described
Left side pin and the opposite medial extremity bottom of metal pad are provided with the second gap slot, and the right side pin and metal pad are opposite
Medial extremity bottom is provided with the 3rd gap slot, is advantageous to pin and metal pad being more firmly fixed, improves between PCB
The reliability of welding；Secondly, its chip is fixed on the middle section of metal pad upper surface by the glue-line that insulate, metal pad,
Left side pin and the respective lower surface of right side pin expose the bottom of epoxy resin cladding, exposed metal pad, so as to
Chip quickly conducts heat, good heat dissipation effect at work.
3. the utility model big current semiconductor device, its left side pin, the metal-coated plating in the lower surface of right side pin
Layer, had both reduced device and PCB conductive contact resistance, the raising for the weld strength being also beneficial between PCB.
Brief description of the drawings
Accompanying drawing 1 is the utility model big current semiconductor device structural representation；
Accompanying drawing 2 is the partial structural diagram of accompanying drawing 1；
Accompanying drawing 3 is the A-A cross-sectional views of accompanying drawing 1.
In the figures above：101st, the first chip；102nd, the second chip；201st, the first L-shaped metal pad；202nd, the second L-shaped
Metal pad；3rd, left side pin；4th, right side pin；5th, epoxy resin cladding；6th, heat conductive insulating glue-line；7th, the first gap slot；
8th, the second gap slot；9th, the 3rd gap slot；10th, annular storage cream groove；11st, the coat of metal；15th, the first gold thread；16th, the second gold thread；
21st, slide glass area；22nd, rod-type extension.
Embodiment
Below in conjunction with the accompanying drawings and embodiment is further described to the utility model：
Embodiment 1：A kind of big current semiconductor device, including the first chip 101, the second chip 102, the first L-shaped metal
Pad 201, the second L-shaped metal pad 202, several left side pins 3, several right side pins 4 and epoxy resin cladding 5；
The first L-shaped metal pad 201, the second L-shaped metal pad 202 by slide glass area 21 and are connected to slide glass area 21
Rod-type extension 22 at the top of one end forms, and the slide glass area 21 of the first L-shaped metal pad 201 is embedded in the second L-shaped metal welding
The indentation, there of disk 202, the slide glass area 21 of the second L-shaped metal pad 202 are embedded in the indentation, there of the first L-shaped metal pad 201；
First chip 101, the second chip 102 respectively by the glue-line 6 that insulate be fixed on the first L-shaped metal pad 201,
The middle section of second L-shaped metal pad, the 202 respective upper surface of slide glass area 21, several described spacing side by side of left side pin 3
Ground is arranged at the first chip 101, the left side of the second chip 102, is arranged at first several spacing side by side of right side pin 4
The right side of chip 101, the second chip 102, the first L-shaped metal pad 201, its lower edge of the second L-shaped metal pad 202
It is provided with the first gap slot 7, the L-shaped metal pad 201 of left side pin 3 and first, the second L-shaped metal pad 202 are opposite
Medial extremity bottom is provided with the second gap slot 8, the L-shaped metal pad 201 of right side pin 4 and first, the second L-shaped metal pad
202 opposite medial extremity bottoms are provided with the 3rd gap slot 9, and the epoxy resin cladding 5 is coated on chip 1, the first L-shaped metal
Pad 201, the second L-shaped metal pad 202, several left side pins 3, several right side pins 4 on, the first L-shaped metal
Pad 201, the second L-shaped metal pad 202, left side pin 3 and 4 respective lower surface of right side pin expose epoxy resin cladding
The bottom of body 5；
Some both ends of first gold thread 15 electrically connect with the first chip 101, the second chip 102 and left side pin 3 respectively, if
The dry both ends of the second gold thread of root 16 electrically connect with the first chip 101, the second chip 102 and right side pin 4 respectively, first L-shaped
Metal pad 201, the upper surface of the second L-shaped metal pad 202 are provided with the annular storage cream groove 10 of a closure, this annular storage along edge
The cross sectional shape of cream groove 10 is inverted trapezoidal, and this annular storage cream groove 10 is immediately below the first chip 101, the second chip 102 and leans on
The fringe region of nearly chip；The left side pin 3, the metal-coated coating 11 in the lower surface of right side pin 4, the coat of metal
17 and the thickness ratio of left side pin 3 or right side pin 4 are 1：8.5.
The number of above-mentioned left side pin 3 and right side pin 4 is 8；The above-mentioned coat of metal 11 is tin layers.
Embodiment 2：A kind of big current semiconductor device, including the first chip 101, the second chip 102, the first L-shaped metal
Pad 201, the second L-shaped metal pad 202, several left side pins 3, several right side pins 4 and epoxy resin cladding 5；
The first L-shaped metal pad 201, the second L-shaped metal pad 202 by slide glass area 21 and are connected to slide glass area 21
Rod-type extension 22 at the top of one end forms, and the slide glass area 21 of the first L-shaped metal pad 201 is embedded in the second L-shaped metal welding
The indentation, there of disk 202, the slide glass area 21 of the second L-shaped metal pad 202 are embedded in the indentation, there of the first L-shaped metal pad 201；
First chip 101, the second chip 102 respectively by the glue-line 6 that insulate be fixed on the first L-shaped metal pad 201,
The middle section of second L-shaped metal pad, the 202 respective upper surface of slide glass area 21, several described spacing side by side of left side pin 3
Ground is arranged at the first chip 101, the left side of the second chip 102, is arranged at first several spacing side by side of right side pin 4
The right side of chip 101, the second chip 102, the first L-shaped metal pad 201, its lower edge of the second L-shaped metal pad 202
It is provided with the first gap slot 7, the L-shaped metal pad 201 of left side pin 3 and first, the second L-shaped metal pad 202 are opposite
Medial extremity bottom is provided with the second gap slot 8, the L-shaped metal pad 201 of right side pin 4 and first, the second L-shaped metal pad
202 opposite medial extremity bottoms are provided with the 3rd gap slot 9, and the epoxy resin cladding 5 is coated on chip 1, the first L-shaped metal
Pad 201, the second L-shaped metal pad 202, several left side pins 3, several right side pins 4 on, the first L-shaped metal
Pad 201, the second L-shaped metal pad 202, left side pin 3 and 4 respective lower surface of right side pin expose epoxy resin cladding
The bottom of body 5；
Some both ends of first gold thread 15 electrically connect with the first chip 101, the second chip 102 and left side pin 3 respectively, if
The dry both ends of the second gold thread of root 16 electrically connect with the first chip 101, the second chip 102 and right side pin 4 respectively, first L-shaped
Metal pad 201, the upper surface of the second L-shaped metal pad 202 are provided with the annular storage cream groove 10 of a closure, this annular storage along edge
The cross sectional shape of cream groove 10 is inverted trapezoidal, and this annular storage cream groove 10 is immediately below the first chip 101, the second chip 102 and leans on
The fringe region of nearly chip；The left side pin 3, the metal-coated coating 11 in the lower surface of right side pin 4, the coat of metal
17 and the thickness ratio of left side pin 3 or right side pin 4 are 1：9.
The number of above-mentioned left side pin 3 and right side pin 4 is 4；The above-mentioned coat of metal 11 is NiPdAu layer.
During using above-mentioned big current semiconductor device, it is sealed because being provided with Liang Ge slide glasses area in an encapsulating structure
Two chips that need to isolate are filled, realize dual chip encapsulation function；Secondly, be advantageous to pin and metal pad is more firm
It is fixed, improve the reliability welded between PCB；Again, its exposed metal pad, so that chip quickly passes at work
Heat conduction amount, good heat dissipation effect；Again, it effectively prevent, missing solder and the problem of rosin joint, both improved the carrying electric current of device, and also carried
The high stability and reliability of integrated chip.
For above-described embodiment only to illustrate technical concepts and features of the present utility model, its object is to allow be familiar with technique
Personage can understand content of the present utility model and implement according to this, the scope of protection of the utility model can not be limited with this.
All equivalent change or modifications made according to the utility model Spirit Essence, should all cover the scope of protection of the utility model it
It is interior.
Claims (3)
- A kind of 1. big current semiconductor device, it is characterised in that：Including the first chip（101）, the second chip（102）, the first L-shaped Metal pad（201）, the second L-shaped metal pad（202）, several left side pins（3）, several right side pins（4）And epoxy Resin-coating body（5）；The first L-shaped metal pad（201）, the second L-shaped metal pad（202）By slide glass area（21）Be connected to slide glass area （21）Rod-type extension at the top of one end（22）Composition, the first L-shaped metal pad（201）Slide glass area（21）Embedded second L-shaped metal pad（202）Indentation, there, the second L-shaped metal pad（202）Slide glass area（21）Embedded first L-shaped metal Pad（201）Indentation, there；First chip（101）, the second chip（102）Pass through the glue-line that insulate respectively（6）It is fixed on the first L-shaped metal pad （201）, the second L-shaped metal pad（202）Respective slide glass area（21）The middle section of upper surface, several described left side pins （3）It is arranged at the first chip spacing side by side（101）, the second chip（102）Left side, several described right side pins（4）And Row is positioned apart from the first chip（101）, the second chip（102）Right side, the first L-shaped metal pad（201）, second L-shaped metal pad（202）Its lower edge is provided with the first gap slot（7）, the left side pin（3）With the first L-shaped metal welding Disk（201）, the second L-shaped metal pad（202）Opposite medial extremity bottom is provided with the second gap slot（8）, the right side pin（4） With the first L-shaped metal pad（201）, the second L-shaped metal pad（202）Opposite medial extremity bottom is provided with the 3rd gap slot（9）, The epoxy resin cladding（5）It is coated on chip（1）, the first L-shaped metal pad（201）, the second L-shaped metal pad（202）、 Several left side pins（3）, several right side pins（4）On, the first L-shaped metal pad（201）, the second L-shaped metal welding Disk（202）, left side pin（3）With right side pin（4）Respective lower surface exposes epoxy resin cladding（5）Bottom；Some first gold threads（15）Both ends respectively with the first chip（101）, the second chip（102）With left side pin（3）It is electrically connected Connect, some second gold threads（16）Both ends respectively with the first chip（101）, the second chip（102）With right side pin（4）It is electrically connected Connect, the first L-shaped metal pad（201）, the second L-shaped metal pad（202）Upper surface is provided with the ring of a closure along edge Shape stores up cream groove（10）, this annular storage cream groove（10）Cross sectional shape be inverted trapezoidal, this annular storage cream groove（10）Positioned at the first chip （101）, the second chip（102）Underface and the fringe region of close chip；The left side pin（3）, right side pin（4）Under Coating surface has the coat of metal（11）, the coat of metal（17）With left side pin（3）Or right side pin（4）Thickness ratio be 1：8~10.
- 2. big current semiconductor device according to claim 1, it is characterised in that：The left side pin（3）Draw with right side Pin（4）Number be 3 ~ 10.
- 3. big current semiconductor device according to claim 1 or 2, it is characterised in that：The coat of metal（11）For tin Layer or NiPdAu layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720164445.2U CN206672916U (en) | 2017-02-23 | 2017-02-23 | Big current semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720164445.2U CN206672916U (en) | 2017-02-23 | 2017-02-23 | Big current semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206672916U true CN206672916U (en) | 2017-11-24 |
Family
ID=60379376
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720164445.2U Expired - Fee Related CN206672916U (en) | 2017-02-23 | 2017-02-23 | Big current semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206672916U (en) |
-
2017
- 2017-02-23 CN CN201720164445.2U patent/CN206672916U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20171124 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |