CN206595245U - 一种多塔二极管模块 - Google Patents
一种多塔二极管模块 Download PDFInfo
- Publication number
- CN206595245U CN206595245U CN201720029057.3U CN201720029057U CN206595245U CN 206595245 U CN206595245 U CN 206595245U CN 201720029057 U CN201720029057 U CN 201720029057U CN 206595245 U CN206595245 U CN 206595245U
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- 239000000758 substrate Substances 0.000 claims abstract description 34
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 29
- 238000009413 insulation Methods 0.000 claims abstract description 17
- 239000003822 epoxy resin Substances 0.000 claims abstract description 10
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000035882 stress Effects 0.000 abstract description 5
- 238000012536 packaging technology Methods 0.000 abstract description 2
- 230000008646 thermal stress Effects 0.000 abstract description 2
- 238000002360 preparation method Methods 0.000 description 7
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 230000000994 depressogenic effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 2
- 230000008014 freezing Effects 0.000 description 2
- 238000007710 freezing Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201720029057.3U CN206595245U (zh) | 2017-01-11 | 2017-01-11 | 一种多塔二极管模块 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201720029057.3U CN206595245U (zh) | 2017-01-11 | 2017-01-11 | 一种多塔二极管模块 |
Publications (1)
Publication Number | Publication Date |
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CN206595245U true CN206595245U (zh) | 2017-10-27 |
Family
ID=60128499
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201720029057.3U Active CN206595245U (zh) | 2017-01-11 | 2017-01-11 | 一种多塔二极管模块 |
Country Status (1)
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CN (1) | CN206595245U (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106783761A (zh) * | 2017-01-11 | 2017-05-31 | 昆山晨伊半导体有限公司 | 一种多塔二极管模块及其制备方法 |
-
2017
- 2017-01-11 CN CN201720029057.3U patent/CN206595245U/zh active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106783761A (zh) * | 2017-01-11 | 2017-05-31 | 昆山晨伊半导体有限公司 | 一种多塔二极管模块及其制备方法 |
CN106783761B (zh) * | 2017-01-11 | 2023-12-08 | 昆山晨伊半导体有限公司 | 一种多塔二极管模块及其制备方法 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CB03 | Change of inventor or designer information | ||
CB03 | Change of inventor or designer information |
Inventor after: Luo Wenhua Inventor after: Cao Yu Inventor after: Han Ping Inventor before: Cao Yu Inventor before: Luo Wenhua Inventor before: Han Ping |
|
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: Room 11, 1206 Jinyang East Road, Lujia Town, Kunshan City, Suzhou City, Jiangsu Province Patentee after: Kunshan Daoming Chenyi Semiconductor Co.,Ltd. Country or region after: China Address before: 215332 Mingao Road 189, Huaqiao Town, Kunshan City, Suzhou City, Jiangsu Province Patentee before: KUNSHAN CHENYI SEMICONDUCTOR Co.,Ltd. Country or region before: China |