CN206480644U - 一种多层折射率渐变硅胶封装发光二极管 - Google Patents

一种多层折射率渐变硅胶封装发光二极管 Download PDF

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CN206480644U
CN206480644U CN201621489969.0U CN201621489969U CN206480644U CN 206480644 U CN206480644 U CN 206480644U CN 201621489969 U CN201621489969 U CN 201621489969U CN 206480644 U CN206480644 U CN 206480644U
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refractive index
negative electrode
electrode pin
led chip
emitting diode
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蒋足辉
李海平
张星
罗勇
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Zhongshan aiyinte photoelectric Co Ltd
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蒋足辉
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
    • H01L2224/8592Applying permanent coating, e.g. protective coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Abstract

本实用新型公开了一种多层折射率渐变硅胶封装发光二极管,其特征在于:包括LED芯片,LED芯片由多层不同折射率封装胶水封装,从里到外按折射率从高到低封包而成。本产品通过多层折射率封装胶水封装,使反射的光线通过二次或以上的折射发散出来,提高产品亮度;通过控制封装体最外一层胶水的折射率,可以控制产品的发光角度。安装成成品后,在不外加反光杯的情况下,能有效增加侧光的利用;在达到同样照度的条件下,比普通封装发光二极管使用数量少,起到节能和降低原物料成本的作用。

Description

一种多层折射率渐变硅胶封装发光二极管
技术领域
本实用新型涉及一种表面贴装式发光二极管,尤其涉及一种多层折射率渐变硅胶封装发光二极管。
背景技术
LED照明光源由于其耗能低、使用寿命长、无污染等一系列优点,目前正越来越广泛地应用于照明领域当中,随着社会的发展以及照明技术的进步,这一趋势越发明显,特别是LED灯管和LED球泡等的应用。经过多年的发展,LED灯具的发光效率有了长足的进步,已经接近或超过传统光源,但是,其价格和传统光源比,还是价格比较高。如何降低生产成本,是LED生产商都要面对的问题。如果要增强LED灯具的整体发光强度,传统的做法是增大表面贴装式发光二极管的密度或电流,但是增大发光二极管的密度相当于增加发光二极管的数量,该方法会导致成本大幅提高且不利于散热,增大电流则会使LED光衰变大,缩短使用寿命。
发明内容
为了解决上述问题,本实用新型提供了一种多层折射率渐变硅胶封装发光二极管,该发光二极管采用多种折射率的封装 胶水对LED进行封装,从里到外,封装胶水折射率从高到低。用同样的LED芯片封装,出光效率能提高10-20%。
本实用新型为解决其技术问题所采用的技术方案是:
一种多层折射率渐变硅胶封装发光二极管,其特征在于:包括LED芯片,所述的LED芯片可以放置在支架碗杯中,也可以放置在一水平支架上。
其中,所述的发光二极管包括一塑胶壳及设置在塑胶壳底部的阴极引脚和阳极引脚,所述塑胶壳上反光杯,所述反光杯内设置有LED芯片及封装LED芯片的封装胶水或含有荧光粉的封装胶水,其中LED芯片的两极通过金属丝对应连接到阴极引脚和阳极引脚。
其中,所述封装体,由两种或以上不同折射率的封装胶水固化而成,最高折射率的封装胶水灌封在LED芯片上;中等折射率的封装胶水,灌封于已经固化的最高折射率封装胶水上;最低折射率的封装胶水,灌封于已经固化的中等折射率封装胶水上。
进一步,所述阴极引脚和阳极引脚从塑胶壳中部往对应侧边延伸至反光杯内。
进一步,所述LED芯片设置在阴极引脚或中性热沉上,且LED芯片阴极通过金属丝与阴极引脚相连,LED芯片阳极与阳 极引脚相连。
本实用新型的有益效果是:本实用新型在封包发光二极管芯片时,采用了多种折射率的封装胶水进行封装,与普通封装发光二极管相比具有如下几个优点:
1、通过多层折射率渐变封装体的作用,使发光二极管的出光效率提高,使产品的整体光效提高;
2、通过控制封装体最外一层胶水的折射率,可以控制产品的发光角度。安装成成品后,在不外加反光杯的情况下,能有效增加侧光的利用;
3、在达到同样照度的条件下,比普通封装发光二极管使用数量少,起到节能和降低原物料成本作用;
4、因为器件数量减少,使成品更轻、原物料成本更低。
附图说明
下面结合附图和具体实施例对本发明作进一步说明:
图1为本实用新型第一种实施例的剖面图。
图2为本实用新型第二种实施例的剖面图。
图3为本实用新型实施例的工作原理图。
具体实施方式
参照图1、图2,本实用新型的一种多层折射率渐变硅胶封装发光二极管,包括LED芯片8,所述发光二极管处于支架的 碗杯7当中。
其中,所述的一种多层折射率渐变硅胶封装发光二极管包括一塑胶壳4,及设置在塑胶壳引出的阴极引脚5和阳极引脚6,所述塑胶壳4上设置有一碗杯7,所述碗杯内设置有LED芯片8及封装LED芯片的封装体1、封装体2和封装体3,其中LED芯片8的两极对应连接到阴极引脚5和阳极引脚6。
进一步,所述阴极引脚5和阳极引脚6从塑胶壳4中部往对应侧延伸至塑胶壳内,阴极引脚5和阳极引脚6通过金属丝51和金属丝61连接LED芯片的阴极和阳极。
进一步,所述的一种多层折射率渐变硅胶封装发光二极管,其封装体由多种不同折射率的封装胶水固化而成;首先,在芯片上封包封装体1,封装体1固化成型后封包封装体2,等封装体2固化后再封包封装体3,封装胶体从里到外,以封装胶水的折射率由高到低的顺序进行封装。一般来说,光从一个介质传播到另一个介质时,在临界面会发生折射,就是有一部分的光传导到另外一个介质中,有一部分光反射到回原来传播的介质中,折射率越高,传导到另外一个介质的光越多,反之则相反;从图3可以看出,光线4从介质2传播到介质3时,在临界面23进行折射,有一部分光从介质2的临界面23上反射回来,当反射回来的光41传播到临界面21时,因为折射率较低,折射的光线较少,大部分光线会进行再反射,光线42重 新反射回临界面23进行折射,经过一系列的光线折射和反射,使产品的出光效率提高。
以上是对本实用新型的较佳实施进行了具体说明,但本发明创造并不限于所述实施例,熟悉本领域的技术人员在不违背本实用新型精神的前提下还可作出种种的等同变形或替换,如封装体的形状设置成圆形或椭圆形等等,这些等同的变形或替换均包含在本申请权利要求所限定的范围内。

Claims (4)

1.一种多层折射率渐变硅胶封装发光二极管,其特征在于:包括LED芯片,所述的LED芯片可以放置在支架碗杯中,也可以放置在一水平支架上;所述的发光二极管包括一塑胶壳及设置在塑胶壳底部的阴极引脚和阳极引脚,所述塑胶壳上反光杯,所述反光杯内设置有LED芯片及封装LED芯片的封装胶水或含有荧光粉的封装胶水,其中LED芯片的两极通过金属丝对应连接到阴极引脚和阳极引脚;所述封装体,由两种或以上不同折射率的封装胶水固化而成,最高折射率的封装胶水灌封在LED芯片上;中等折射率的封装胶水,灌封于已经固化的最高折射率封装胶水上;最低折射率的封装胶水,灌封于已经固化的中等折射率封装胶水上。
2.根据权利要求1所述的一种多层折射率渐变硅胶封装发光二极管,其特征在于:所述阴极引脚和阳极引脚从塑胶壳两侧延伸出来。
3.根据权利要求1所述的一种多层折射率渐变硅胶封装发光二极管,其特征在于:所述LED芯片设置在阴极引脚或中性热沉上,且LED芯片阴极通过金属丝与阴极引脚相连,LED芯片阳极通过金属丝与阳极引脚相连。
4.根据权利要求1所述的一种多层折射率渐变硅胶封装发光二极管,其特征在于:所述LED芯片设置在阳极引脚上,且 LED芯片阳极通过金属丝与阳极引脚相连,LED芯片阴极通过金属丝与阴极引脚相连。
CN201621489969.0U 2016-12-31 2016-12-31 一种多层折射率渐变硅胶封装发光二极管 Expired - Fee Related CN206480644U (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108006491A (zh) * 2017-11-28 2018-05-08 西安科锐盛创新科技有限公司 Led隧道灯
CN111505865A (zh) * 2020-04-20 2020-08-07 深圳市隆利科技股份有限公司 直下式背光模组

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108006491A (zh) * 2017-11-28 2018-05-08 西安科锐盛创新科技有限公司 Led隧道灯
CN108006491B (zh) * 2017-11-28 2020-10-30 吉安建伟纸塑制品包装有限公司 Led隧道灯
CN111505865A (zh) * 2020-04-20 2020-08-07 深圳市隆利科技股份有限公司 直下式背光模组

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