CN206422052U - Infrared detector membrane laser annealing system - Google Patents
Infrared detector membrane laser annealing system Download PDFInfo
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- CN206422052U CN206422052U CN201720132443.5U CN201720132443U CN206422052U CN 206422052 U CN206422052 U CN 206422052U CN 201720132443 U CN201720132443 U CN 201720132443U CN 206422052 U CN206422052 U CN 206422052U
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Abstract
The utility model discloses a kind of infrared detector membrane laser annealing system, including laser, beam-expanding collimation mirror, diaphragm, high reflective mirror, shaping mirror, plano-convex cylindrical lens, objective table and displacement platform；Infrared detector is placed on the surface of objective table, and objective table is arranged on displacement platform；Laser, beam-expanding collimation mirror and diaphragm are located along the same line, and shaping mirror, plano-convex cylindrical lens and objective table are located along the same line；The laser beam that laser is produced, which is sequentially passed through, incides high reflective mirror after beam-expanding collimation mirror and diaphragm, laser beam changes direction after the reflection of high reflective mirror, and sequentially passes through the film surface of the infrared detector incided after shaping mirror and plano-convex cylindrical lens on objective table.The characteristics of the utility model has short process time, efficiency high, process costs low and does not interfere with chip performance.
Description
Technical field
The utility model is related to infrared detector processing technique field, and in particular to a kind of infrared detector membrane laser is moved back
Fiery system.
Background technology
Infrared detector be divided into refrigeration mode and non-refrigeration type, wherein refrigeration type infrared detector in working condition, it is necessary to
Refrigeration processing, operation and maintenance somewhat expensive are carried out to it using liquid nitrogen；Non-refrigeration type infrared detector can at normal temperatures just
Often work, using and maintenance cost it is relatively low, so the infrared detector in application market is mainly the infrared spy of non-refrigeration type now
Survey device.The critical piece of infrared detector is infrared detecting chip, during chip manufacturing, is sequentially prepared bottom reading circuit layer, sacrificial
Domestic animal layer, hanging bridge finally prepares vanadium oxide film on hanging bridge, because the vanadium oxide film sheet resistance of initial preparation is larger, knot
Brilliant characteristic is poor, so needing to make annealing treatment it, improves the crystallization property of film, reduces film rectangular resistance, improves
The temperature-coefficient of electrical resistance of film.
Traditional annealing way is carried out in annealing furnace, the parameter of annealing furnace mainly have atmosphere, pressure, heating-up temperature,
Heat time etc., infrared detecting chip is put into after annealing furnace annealing parameter is set, baking processing then is carried out to chip, it is this
The time of annealing way is long, and cost is high, and annealing efficiency is low.Because the wire in chip bottom reading circuit layer is aluminum conductor, plus
When hot temperature is too high, wire is easily deformed and melted, and has a strong impact on the performance of chip.
Utility model content
To be solved in the utility model is that traditional annealing way has that annealing efficiency is low and influence chip performance is asked
There is provided a kind of infrared detector membrane laser annealing system for topic.
To solve the above problems, the utility model is achieved through the following technical solutions：
Infrared detector membrane laser annealing system, including laser, beam-expanding collimation mirror, diaphragm, high reflective mirror, shaping mirror,
Plano-convex cylindrical lens, objective table and displacement platform；Infrared detector is placed on the surface of objective table, and objective table is arranged on displacement platform
On；Laser, beam-expanding collimation mirror and diaphragm are located along the same line, and shaping mirror, plano-convex cylindrical lens and objective table are located at always
On line；The laser beam that laser is produced, which is sequentially passed through, incides high reflective mirror after beam-expanding collimation mirror and diaphragm, laser beam is through height
Change direction after the reflection of anti-mirror, and sequentially pass through the infrared detector incided after shaping mirror and plano-convex cylindrical lens on objective table
Film surface.
As an improvement, above-mentioned infrared detector membrane laser annealing system, still further comprises vacuum chamber, objective table is put
Put in the vacuum chamber.
As a further improvement, being passed through argon gas, helium or air in vacuum chamber.
In such scheme, displacement platform is XYZ three-shaft displacement platforms.
In such scheme, laser, beam-expanding collimation mirror and diaphragm be located at horizontal linear on, shaping mirror, plano-convex cylindrical lens and
Objective table is located in vertical line.
In such scheme, the wavelength for the laser that laser is projected is 266nm, 308nm or 355nm.
Compared with prior art, the utility model realizes annealing process using laser heating sample surfaces, with following spy
Point：
1st, process time is short, efficiency high；
2nd, processing atmosphere can be carried out under atmospheric environment, save annealing process cost；
3rd, process is easily controllable, can be according to the specifically used requirement of vanadium oxide film, flexible design annealing
Scheme；
4th, annealing process will not damage bottom reading circuit.
Brief description of the drawings
Fig. 1 is the principle schematic of infrared detector membrane laser annealing system.
Label in figure：1st, laser；2nd, beam-expanding collimation mirror；3rd, diaphragm；4th, high reflective mirror；5th, shaping mirror；6th, plano-convex cylindrical lens；
7th, vacuum chamber；8th, objective table；9th, displacement platform.
Embodiment
To make the purpose of this utility model, technical scheme, advantage more clear, herein below combination concrete operations are real
Example, to the further details of explanation of the utility model.
A kind of infrared detector membrane laser annealing system, as shown in figure 1, including laser 1, beam-expanding collimation mirror 2, diaphragm
3rd, high reflective mirror 4, shaping mirror 5, plano-convex cylindrical lens 6, vacuum chamber 7, objective table 8 and displacement platform 9.
Infrared detector is placed on the surface of objective table 8.Infrared detector and objective table 8 can be placed on atmospheric environment
In, vacuum chamber 7 need not be now set；It can also be arranged in vacuum chamber 7, now need to set up vacuum chamber 7.In this reality
With in new preferred embodiment, infrared detector and objective table 8 are each provided in vacuum chamber 7.Vacuum chamber 7 is laser annealing atmosphere
Argon gas, helium or air etc. can be passed through by enclosing in control device, device.
Displacement platform 9 can both be located in vacuum chamber 7, now, and only infrared detector and objective table 8 are arranged on displacement and put down
On platform 9；Displacement platform 9 can be located at outside vacuum chamber 7 again, and now, infrared detector, objective table 8 and vacuum chamber 7 are respectively provided with
On displacement platform 9.
Displacement platform 9 is XYZ three-shaft displacement platforms 9.Objective table 8 and its infrared detector is controlled to exist by displacement platform 9
The motion of XY direction of principal axis, can realize that laser annealing mode is controlled.According to laser facula length, set a's in X-direction big
It is small, the Duplication of laser annealing can be adjusted, while the total length b moved on the total length c and Y-axis that are moved in X-axis can root
Reasonable set is carried out according to the actual size of annealing specimen, it is possible thereby to freely set annealing way.Control to carry by displacement platform 9
Thing platform 8 and its infrared detector can adjust the focal position of laser annealing in the motion of Z-direction.
Laser 1, beam-expanding collimation mirror 2 and diaphragm 3 are located along the same line, shaping mirror 5, plano-convex cylindrical lens 6 and objective table 8
It is located along the same line, above-mentioned two straight lines are in a certain angle.In the utility model preferred embodiment, laser 1, standard is expanded
Straight mirror 2 and diaphragm 3 are located on horizontal linear, and shaping mirror 5, plano-convex cylindrical lens 6 and objective table 8 are located in vertical line, now high
The angle of anti-mirror 4 and incident light is 45 °, and the angle with emergent light is also 45 °.The laser beam that laser 1 is produced is sequentially passed through
High reflective mirror 4 is incided after beam-expanding collimation mirror 2 and diaphragm 3, laser beam changes direction after the reflection of high reflective mirror 4, and passes through successively
Cross the film surface of the infrared detector incided after shaping mirror 5 and plano-convex cylindrical lens 6 on objective table 8.
Optical maser wavelength produced by laser 1 is 266nm, 308nm or 355nm, and laser pulse width is 1ns~200ns, laser
Power output is 50~10000mW, and laser scan rate is 10mm/s~1000mm/s, and laser repetition rate is 1~200KHz.
The course of work of the present utility model is as follows：
Light path system is built, the laser beam level of laser 1 is projected, and first passes through the axle center of beam-expanding collimation mirror 2, then pass through
The center of diaphragm 3, then incides high reflective mirror 4 with 45° angle.Laser beam is changed into vertical after high reflective mirror 4 from horizontal direction
Direction is projected, and passes sequentially through the center of shaping mirror 5 and plano-convex cylindrical lens 6, is finally radiated at the infrared detector on objective table 8
The film surface of sample.
Light path is built finish after, sample is placed on objective table 8, the power of laser is adjusted to minimum, controls XYZ displacements
The motion of platform 9, finds the proper laser irradiation position of sample in the horizontal direction.Laser power is adjusted to suitable size, control
The motion of XYZ displacement platforms 9 processed, sample is found in the optimal laser irradiation position of vertical direction according to actual effect of drawing a design
Put, that is, focal position, while carrying out light path calibration according to the microscope photograph drawn a design, then drawn a design again, observation is aobvious
Micro mirror is drawn a design vestige, calibrates light path, until light path calibration is completed.
When light path calibration is completed, change laser power, vanadium oxide film is carried out using different laser powers
Draw a design, test sample electrology characteristic, according to electrology characteristic data, optimizes laser parameter.Using the laser parameter after optimization to sample
Product are made annealing treatment, and carry out an electrology characteristic test after the completion of processing again, and record data, annealing is completed.
Vanadium oxide film is made annealing treatment using laser, improves thin film crystallization characteristic, film room temperature resistance is reduced, carries
The temperature-coefficient of electrical resistance of high film, improves the compatibility of vanadium oxide film and standard semi-conductor processes.
Annealing process is realized using laser heating sample surfaces, its major advantage includes：1. local heat characteristic.Laser
Heat penetration is determined by the penetration depth of laser in the material, selects suitable wavelength heat penetration control can be into surface number
Nanometer is between a few micrometers.2. heating and cooling are fast, annealing time is short.Pulse laser can realize the heating and cooling of thousands of degrees Celsius of arteries and veins second
Speed.Meanwhile, annealing time can be determined by the pulsewidth of laser 1, if the pulsewidth of laser 1 is nanosecond order, mean to move back
The fiery time is also in nanosecond order.3. annealing temperature is controllable.In principle, during laser annealing the surface temperature of print by energy density
Determine, its calculation formula is：Energy density=laser power/(frequency * facula areas), unit is J/cm2.It is laser annealing
One of mostly important parameter in technique, determines the energy that sample surfaces are applied in individual pulse, and then decide heat
Distribution and Temperature Distribution, and decide process results.Therefore, by controlling power to realize the controllable of annealing temperature.④
Technological flexibility is good.Shape and Energy distribution by optical element and system call interception output facula are to directly affect heat expansion
The key of scattered, Temperature Distribution and stress characteristics, which increase the flexibility of technique.
Claims (6)
1. infrared detector membrane laser annealing system, it is characterised in that：Including laser (1), beam-expanding collimation mirror (2), diaphragm
(3), high reflective mirror (4), shaping mirror (5), plano-convex cylindrical lens (6), objective table (8) and displacement platform (9)；
Infrared detector is placed on the surface of objective table (8), and objective table (8) is arranged on displacement platform (9)；
Laser (1), beam-expanding collimation mirror (2) and diaphragm (3) are located along the same line, shaping mirror (5), plano-convex cylindrical lens (6) and
Objective table (8) is located along the same line；
The laser beam that laser (1) is produced incides high reflective mirror (4) after sequentially passing through beam-expanding collimation mirror (2) and diaphragm (3), swashs
Light light beam changes direction after the reflection of high reflective mirror (4), and incides after sequentially passing through shaping mirror (5) and plano-convex cylindrical lens (6)
The film surface of infrared detector on objective table (8).
2. infrared detector membrane laser annealing system according to claim 1, it is characterised in that：Still further comprise vacuum
Chamber (7), objective table (8) is placed in the vacuum chamber (7).
3. infrared detector membrane laser annealing system according to claim 2, it is characterised in that：Lead in vacuum chamber (7)
Enter argon gas, helium or air.
4. infrared detector membrane laser annealing system according to claim 1, it is characterised in that：Displacement platform (9) is XYZ
Three-shaft displacement platform (9).
5. infrared detector membrane laser annealing system according to claim 1, it is characterised in that：Laser (1), expand standard
Straight mirror (2) and diaphragm (3) are located on horizontal linear, and shaping mirror (5), plano-convex cylindrical lens (6) and objective table (8) are located at vertical line
On.
6. infrared detector membrane laser annealing system according to claim 1, it is characterised in that：What laser (1) was projected
The wavelength of laser is 266nm, 308nm or 355nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720132443.5U CN206422052U (en) | 2017-02-14 | 2017-02-14 | Infrared detector membrane laser annealing system |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201720132443.5U CN206422052U (en) | 2017-02-14 | 2017-02-14 | Infrared detector membrane laser annealing system |
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| CN206422052U true CN206422052U (en) | 2017-08-18 |
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| CN201720132443.5U Expired - Fee Related CN206422052U (en) | 2017-02-14 | 2017-02-14 | Infrared detector membrane laser annealing system |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110744208A (en) * | 2018-07-23 | 2020-02-04 | 杭州纤纳光电科技有限公司 | Production line laser marking device and using method thereof |
| US11322366B1 (en) * | 2021-01-26 | 2022-05-03 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Ultrafast laser annealing of thin films |
| CN115602751A (en) * | 2022-10-25 | 2023-01-13 | 江苏华兴激光科技有限公司（Cn） | Laser annealing device for infrared avalanche detection chip and detection method thereof |
-
2017
- 2017-02-14 CN CN201720132443.5U patent/CN206422052U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110744208A (en) * | 2018-07-23 | 2020-02-04 | 杭州纤纳光电科技有限公司 | Production line laser marking device and using method thereof |
| US11322366B1 (en) * | 2021-01-26 | 2022-05-03 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Ultrafast laser annealing of thin films |
| US11631593B2 (en) | 2021-01-26 | 2023-04-18 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Ultrafast laser annealing of thin films |
| CN115602751A (en) * | 2022-10-25 | 2023-01-13 | 江苏华兴激光科技有限公司（Cn） | Laser annealing device for infrared avalanche detection chip and detection method thereof |
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