CN206379887U - A kind of intelligent sine voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification - Google Patents

A kind of intelligent sine voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification Download PDF

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CN206379887U
CN206379887U CN201720037310.XU CN201720037310U CN206379887U CN 206379887 U CN206379887 U CN 206379887U CN 201720037310 U CN201720037310 U CN 201720037310U CN 206379887 U CN206379887 U CN 206379887U
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oxide
metal
semiconductor
unit
grid
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廖志刚
李金龙
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Guangdong best medical equipment Co., Ltd
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Guangdong Bestek ECommerce Co Ltd
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Abstract

The utility model discloses a kind of intelligent sine voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification, its include AC input cell, PFC boost unit, inversion reversed phase unit and:Metal-oxide-semiconductor full-bridge rectification unit, includes the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor and the first electric capacity, and the first metal-oxide-semiconductor and the 4th metal-oxide-semiconductor are simultaneously turned on, and the second metal-oxide-semiconductor and the 3rd metal-oxide-semiconductor are simultaneously turned on;CLC filter units, including filter inductance, the first filter capacitor and the second filter capacitor, the front end of the filter inductance is connected to the output end of PFC boost unit, the rear end of filter inductance as CLC filter units output end, first filter capacitor is connected between the front end of filter inductance and ground, and the second filter capacitor is connected between the rear end of filter inductance and ground.The utility model can improve conversion efficiency, realize fan-free cooling requirements, and reduction noise.

Description

A kind of intelligent sine voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification
Technical field
The utility model is related to voltage conversion circuit, more particularly to a kind of intelligent sine based on metal-oxide-semiconductor full-bridge rectification Wave voltage change-over circuit.
Background technology
In the prior art, AC turns AC intelligent boost-buck conversion equipments and is otherwise known as travelling socket, and voltage conversion circuit is should Use AC turn AC intelligent boost-buck conversion equipments be otherwise known as travelling socket Key Circuit, can AC/AC conversion in realize It is depressured the function of simultaneously burning voltage and frequency.Current AC/AC is just in meaningful formula equipment, and rectification part uses diode or rectification mostly Bridge makees rectifier cell, and when AC voltages reach 90V, commutation diode or the heating of bridge heap are serious, therefore, are set in portable AC-AC Need to increase fan cooling in standby, but this mode will bring noise problem, while the PF values of input are low.In practical application, Due to there is the switching of the high speed of switching tube during voltage conversion so that the outlet side of circuit can have certain high-frequency impulse letter Number, and then the quality of output voltage is influenceed, thus be difficult to meet conversion requirements.
Utility model content
The technical problems to be solved in the utility model is, can improve voltage there is provided one kind in view of the shortcomings of the prior art The PF values of conversion equipment, can filter out high-frequency crosstalk, reduce noise, reduction product cost, reduce small product size it is complete based on metal-oxide-semiconductor The intelligent sine voltage change-over circuit of bridge rectification.
In order to solve the above technical problems, the utility model is adopted the following technical scheme that.
A kind of intelligent sine voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification, it includes:One exchange input is single Member, for incoming transport electricity;One metal-oxide-semiconductor full-bridge rectification unit, includes the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, Four metal-oxide-semiconductors and the first electric capacity, the drain electrode of first metal-oxide-semiconductor and the source electrode of the 3rd metal-oxide-semiconductor are all connected to AC input cell First output end, the drain electrode of second metal-oxide-semiconductor and the source electrode of the 4th metal-oxide-semiconductor are all connected to the second output of AC input cell End, is used as the output of metal-oxide-semiconductor full-bridge rectification unit after the source electrode interconnection of the source electrode and the second metal-oxide-semiconductor of first metal-oxide-semiconductor Rectify pole, the drain electrode of the 3rd metal-oxide-semiconductor and the drain electrode of the 4th metal-oxide-semiconductor are used as metal-oxide-semiconductor full-bridge rectification unit after being connected with each other Negative pole of output end, the grid of first metal-oxide-semiconductor, the grid of the second metal-oxide-semiconductor, the grid of the grid of the 3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor Pole is respectively used to access pwm pulse signal, to make first metal-oxide-semiconductor and the 4th metal-oxide-semiconductor simultaneously turn on, second metal-oxide-semiconductor Simultaneously turned on the 3rd metal-oxide-semiconductor, first electric capacity is parallel to the output end of metal-oxide-semiconductor full-bridge rectification unit;One PFC boost list Member, is connected to the output end of metal-oxide-semiconductor full-bridge rectification unit, and the PFC boost unit is used for the defeated of metal-oxide-semiconductor full-bridge rectification unit Go out voltage and carry out boost conversion;One CLC filter units, include filter inductance, the first filter capacitor and the second filter capacitor, institute The front end for stating filter inductance is connected to the output end of PFC boost unit, and the rear end of the filter inductance is used as CLC filter units Output end, first filter capacitor is connected between the front end of filter inductance and ground, and second filter capacitor is connected to filter Between the rear end and ground of ripple inductance;One inversion reversed phase unit, is connected to the output end of CLC filter units, the inversion paraphase list It is alternating current that member, which is used for the output voltage paraphase of CLC filter units,.
Preferably, the PFC boost unit includes boost inductance, first switch pipe, the first commutation diode and electrolysis Electric capacity, the front end of the boost inductance is connected to the output end of input block, and the rear end of the boost inductance is connected to first and opened The drain electrode of pipe, the source ground of the first switch pipe are closed, the grid of the first switch pipe is used to access PWM controls letter all the way Number, the anode of drain electrode the first commutation diode of connection of the first switch pipe, the negative electrode conduct of first commutation diode The output end of PFC boost unit, and the positive pole of the negative electrode connection electrochemical capacitor of first commutation diode, the negative pole of electrochemical capacitor Ground connection.
Preferably, it is connected with pull down resistor between the grid and source electrode of the first switch pipe.
Preferably, a control unit, grid, the grid of the second metal-oxide-semiconductor, the 3rd MOS of first metal-oxide-semiconductor are also included The grid of the grid of pipe, the grid of the 4th metal-oxide-semiconductor and first switch pipe is electrically connected in control unit, by the control Unit and the on off operating mode for controlling the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor and first switch pipe.
Preferably, the first output end and the second output end of the AC input cell are connected by current-limiting resistance respectively In control unit, to make control unit obtain the phase of alternating current voltage.
Preferably, the AC input cell includes socket, the first insurance, lightning protection resistance, common mode inhibition inductance and peace Electric capacity is advised, first insurance is serially connected with the zero line of socket or live wire, and the front end of the common mode inhibition inductance is parallel to socket, The lightning protection resistance is parallel to the front end of common mode inhibition inductance, and the safety electric capacity is parallel to the rear end of common mode inhibition inductance, and The rear end of the common mode inhibition inductance as AC input cell output end.
Preferably, a D/C voltage sampling unit is also included, the D/C voltage sampling unit includes be sequentially connected in series Two sampling resistors and the 3rd sampling resistor, the front end of second sampling resistor are connected to the output end of CLC filter units, described The rear end of 3rd sampling resistor is connected to control unit, makes control single by second sampling resistor and the 3rd sampling resistor The electric signal of member collection CLC filter unit outputs.
Preferably, the inversion reversed phase unit includes being opened by second switch pipe, the 3rd switching tube, the 4th switching tube and the 5th Close the inverter bridge of pipe composition, grid, the grid of the 3rd switching tube, the grid and the 5th of the 4th switching tube of the second switch pipe The grid of switching tube is connected to control unit, and the 4th switching tube, the 5th switching tube, are controlled by described control unit Six switching tubes and the 7th switching tube on or off, to make the inversion reversed phase unit output AC voltage.
Preferably, the output end of the inversion reversed phase unit is in series with the second insurance.
Preferably, described control unit includes single-chip microcomputer and its peripheral circuit.
In intelligent sine voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification disclosed in the utility model, it will exchange Input block connects AC power so that alternating current transmission to metal-oxide-semiconductor full-bridge rectification unit, in metal-oxide-semiconductor full-bridge rectification unit, When L is sinusoidal half cycle, the second metal-oxide-semiconductor and the 3rd metal-oxide-semiconductor is made to turn on, electric current is by fiery L lines, the second metal-oxide-semiconductor, the first electric capacity, the Three metal-oxide-semiconductors formation loop, when N lines are sinusoidal half cycle, the first metal-oxide-semiconductor and the conducting of the 4th metal-oxide-semiconductor, electric current is by N lines, the first MOS Pipe, the first electric capacity, the 4th metal-oxide-semiconductor formation loop;Pass through said process so that form DC voltage on the first electric capacity, this first Electric capacity is, in order to filter out the ripple after rectification, and then to obtain smooth direct current and transmit carrying out boosting to PFC boost unit and turning Change, be finally alternating current for using by the output voltage paraphase of PFC boost unit using inversion reversed phase unit.Above-mentioned voltage turns Change in circuit, because the conducting internal resistance of metal-oxide-semiconductor is seldom, so after consumption power of the electric current on metal-oxide-semiconductor is with regard to very little, therefore rectification Efficiency can be very high, and can effectively improve the PF values of voltage conversion device, while without fan cooling, and then reduce noise, drop Low product cost, and reduce small product size.In addition, in the presence of CLC filter units, high frequency arteries and veins can will be contained in circuit High fdrequency component in the envelope half-wave level of punching is filtered out, and is left behind low frequency component and is transmitted to inversion reversed phase unit so that inversion is fallen Facies unit is converted to the sinusoidal ac of more high-quality, and then greatly improves the quality of output voltage.
Brief description of the drawings
Fig. 1 is the circuit theory diagrams of sine voltage change-over circuit.
Fig. 2 is the circuit block diagram of control unit.
Embodiment
The utility model is described in more detail with reference to the accompanying drawings and examples.
The utility model discloses a kind of intelligent sine voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification, with reference to Shown in Fig. 1 and Fig. 2, it includes:
One AC input cell 10, for incoming transport electricity;
One metal-oxide-semiconductor full-bridge rectification unit 20, includes the first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2, the 3rd metal-oxide-semiconductor Q3, the 4th Metal-oxide-semiconductor Q4 and the first electric capacity C1, the first metal-oxide-semiconductor Q1 drain electrode are all connected to exchange input with the 3rd metal-oxide-semiconductor Q3 source electrode First output end of unit 10, the drain electrode of the second metal-oxide-semiconductor Q2 and the 4th metal-oxide-semiconductor Q4 source electrode are all connected to exchange input list Second output end of member 10, the source electrode of the first metal-oxide-semiconductor Q1 and the second metal-oxide-semiconductor Q2 source electrode are used as metal-oxide-semiconductor after being connected with each other After the output head anode of full-bridge rectification unit 20, the drain electrode of the 3rd metal-oxide-semiconductor Q3 and the 4th metal-oxide-semiconductor Q4 drain electrode are connected with each other As the negative pole of output end of metal-oxide-semiconductor full-bridge rectification unit 20, the grid of the first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2 grid, 3rd metal-oxide-semiconductor Q3 grid and the 4th metal-oxide-semiconductor Q4 grid are respectively used to access pwm pulse signal, to make first metal-oxide-semiconductor Q1 and the 4th metal-oxide-semiconductor Q4 are simultaneously turned on, and the second metal-oxide-semiconductor Q2 and the 3rd metal-oxide-semiconductor Q3 are simultaneously turned on, and the first electric capacity C1 is simultaneously It is coupled to the output end of metal-oxide-semiconductor full-bridge rectification unit 20;
One PFC boost unit 30, is connected to the output end of metal-oxide-semiconductor full-bridge rectification unit 20, and the PFC boost unit 30 is used Boost conversion is carried out in the output voltage to metal-oxide-semiconductor full-bridge rectification unit 20;
One CLC filter units 40, include filter inductance L3, the first filter capacitor C2 and the second filter capacitor C3, described Filter inductance L3 front end is connected to the output end of PFC boost unit 30, and the rear end of the filter inductance L3 is single as CLC filtering The output end of member 40, the first filter capacitor C2 is connected between filter inductance L3 front end and ground, second filtered electrical Hold C3 to be connected between filter inductance L3 rear end and ground;
One inversion reversed phase unit 60, is connected to the output end of CLC filter units 40, the inversion reversed phase unit 60 is used for will The output voltage paraphase of CLC filter units 40 is alternating current.
In above-mentioned intelligent sine voltage change-over circuit, AC input cell 10 is connected into AC power so that exchange Metal-oxide-semiconductor full-bridge rectification unit 20 is transported in fax, in metal-oxide-semiconductor full-bridge rectification unit 20, when L is sinusoidal half cycle, makes the 2nd MOS Pipe Q2 and the 3rd metal-oxide-semiconductor Q3 conductings, electric current forms loop by fiery L lines, the second metal-oxide-semiconductor Q2, the first electric capacity C1, the 3rd metal-oxide-semiconductor Q3, When N lines are sinusoidal half cycle, the first metal-oxide-semiconductor Q1 and the 4th metal-oxide-semiconductor Q4 conductings, electric current is by N lines, the first metal-oxide-semiconductor Q1, the first electric capacity C1, the 4th metal-oxide-semiconductor Q4 formation loop;Pass through said process so that form DC voltage on the first electric capacity C1, first electric capacity C1 It is, in order to filter out the ripple after rectification, and then to obtain smooth direct current and transmit to PFC boost unit 30 to carry out boost conversion, It is finally sinusoidal ac for making by the output sinusoidal half-wave voltage paraphase of PFC boost unit 30 using inversion reversed phase unit 60 With.In above-mentioned voltage conversion circuit, metal-oxide-semiconductor is employed as rectifying device, because the conducting internal resistance of metal-oxide-semiconductor is seldom, so electric The consumption power flowed on metal-oxide-semiconductor can be very high with regard to the efficiency after very little, therefore rectification, and can effectively improve voltage conversion device PF values, at the same without fan cooling, and then noise, reduction product cost are reduced, and reduce small product size.Filtered in CLC single In the presence of member 40, the high fdrequency component in the envelope half-wave level containing high-frequency impulse in circuit can be filtered out, left behind low Frequency component is transmitted to inversion reversed phase unit 60 so that inversion reversed phase unit 60 is converted to the sinusoidal ac of more high-quality, and then Greatly improve the quality of output voltage.
To cause the first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2, the 3rd metal-oxide-semiconductor Q3, the 4th metal-oxide-semiconductor Q4 to respond rapidly to, this practicality It is new to employ four resistance (R1, R2, R3, R4), respectively as the pull down resistor of four rectification metal-oxide-semiconductors to prevent from misleading.
On boosting part, the PFC boost unit 30 includes boost inductance L2, first switch pipe Q5, the first rectification Diode D1 and electrochemical capacitor C2, the boost inductance L2 front end are connected to the output end of input block 10, the boosting electricity Sense L2 rear end is connected to first switch pipe Q5 drain electrode, the source ground of the first switch pipe Q5, the first switch pipe Q5 grid is used to access pwm control signal all the way, the first commutation diode D1's of drain electrode connection of the first switch pipe Q5 Anode, the negative electrode of the first commutation diode D1 is used as the output end of PFC boost unit 30, and first commutation diode D1 Negative electrode connection electrochemical capacitor C2 positive pole, electrochemical capacitor C2 negative pole ground connection.
Further, it is connected with pull down resistor R5 between the grid and source electrode of the first switch pipe Q5.
In above-mentioned PFC boost unit 30, if input line voltage is less than 230V, control unit output high-frequency controling signal Half-wave alternating voltage after GATE of the PWM5 to first switch pipe Q5, the full-bridge rectification of four metal-oxide-semiconductor compositions is by first switch pipe Q5 is boosted in PFC boost mode, and specific boosting principle is:When first switch pipe Q5 is turned on, the electricity on the first electric capacity C1 Flow through boost inductance L2, first switch pipe Q5 to GND formation loop, boost inductance L2 storage energy;When first switch pipe Q5 is closed When disconnected, the induced electromotive force more much higher than input voltage can be formed on boost inductance, induced electromotive force is through the rectification of continued flow tube first Unidirectional pulsating volage, which is formed, after diode D1 progress rectifications gives high-frequency filter circuit filtering again.And first switch pipe Q5 is root The input line voltage adopted according to alternating current sampling circuit for modulation fundamental wave controls PWM1 change in duty cycle, through the first rectification Level after diode D1 rectifications is the but envelope half-wave level containing high-frequency impulse by sinusoidal variations.When input line voltage etc. Single-chip microcomputer U1 closes high frequency modulated circuit when 230V voltages, and first switch pipe Q5 does not work;MOS full-bridge rectifications are filtered Voltage after ripple is directly exported through L2, the first commutation diode D1.
In order to realize closed-loop control, the present embodiment also includes a control unit 70, the grid of the first metal-oxide-semiconductor Q1, Second metal-oxide-semiconductor Q2 grid, the 3rd metal-oxide-semiconductor Q3 grid, the 4th metal-oxide-semiconductor Q4 grid and first switch pipe Q5 grid difference Control unit 70 is electrically connected at, the first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2, the 3rd MOS are controlled by described control unit 70 Pipe Q3, the 4th metal-oxide-semiconductor Q4 and first switch pipe Q5 on off operating mode.Further, described control unit 70 includes single-chip microcomputer U1 And its peripheral circuit.
Further, on the sampling to AC signal, the first output end of the AC input cell 10 and second defeated Go out end and be connected to control unit 70 by current-limiting resistance respectively, to make control unit 70 obtain the phase of alternating current voltage.Tool Body refers to, the width that control unit passes through sampling resistor (R10, R11, R12, R14, R17, R18, R19, R20) Sample AC voltage Value and phase, and then control the first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2, the 3rd metal-oxide-semiconductor Q3, the 4th metal-oxide-semiconductor Q4 conduction phase with Time.
In the present embodiment, the AC input cell 10 includes socket, the first insurance F2, lightning protection resistance RV1, common mode suppression Inductance L1 and safety electric capacity CX1 processed, the first insurance F2 is serially connected with the zero line of socket or live wire, the common mode inhibition inductance L1 front end is parallel to socket, and the lightning protection resistance RV1 is parallel to common mode inhibition inductance L1 front end, the safety electric capacity CX1 Be parallel to common mode inhibition inductance L1 rear end, and the common mode inhibition inductance L1 rear end as AC input cell 10 output End.
As a kind of preferred embodiment, the present embodiment also includes a D/C voltage sampling unit 40, and the D/C voltage sampling is single Member 40 includes before the second sampling resistor R13 and the 3rd sampling resistor R15 being sequentially connected in series, the second sampling resistor R13 End is connected to the output end of CLC filter units 40, and the rear end of the 3rd sampling resistor R15 is connected to control unit 70, by The second sampling resistor R13 and the 3rd sampling resistor R15 and make control unit 70 gather the telecommunications of the output of CLC filter units 40 Number.Above-mentioned voltage sample part is made up of R13, R15, for giving control unit by the voltage adopted, and then determines that inversion is fallen The phase and ON time of facies unit.
On Converting Unit, the inversion reversed phase unit 60 includes being opened by second switch pipe Q6, the 3rd switching tube Q7, the 4th Close the inverter bridge of pipe Q8 and the 5th switching tube Q9 compositions, the grid of the second switch pipe Q6, the 3rd switching tube Q7 grid, the Four switching tube Q8 grid and the 5th switching tube Q9 grid are connected to control unit 70, by described control unit 70 The 4th switching tube Q1, the 5th switching tube Q2, the 6th switching tube Q3 and the 7th switching tube Q4 on or off are controlled, it is described inverse to make Become the output AC voltage of reversed phase unit 60.Further, the output end of the inversion reversed phase unit 60 is in series with the second insurance F1.
Above-mentioned inversion reversed phase unit 50 is by second switch pipe Q6, the 3rd switching tube Q7, the switches of the 4th switching tube Q8 and the 5th Pipe Q9 constitute, after filtering after DC voltage by second switch pipe Q6, load, the 5th switching tube Q9 is formed loop to load confession Electricity, forms first half period power frequency level;Second half period power frequency level is opened by the 4th switching tube Q8, load, the 3rd Pipe Q7 formation loop is closed, a complete power frequency amendment alternating current wave pressure is so formed in load.Control unit is exported Pwm signal send out PWM6, PWM7L, PWM8, PWM9L respectively after drive circuit to second switch pipe Q6, the 3rd switching tube Q7, the 4th switching tube Q8 and the 5th switching tube Q9 GATE poles.Phase in inversion phase inverter is with frequency according to control chip The pattern of inner setting is operated.
Intelligent sine voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification disclosed in the utility model, with efficient The features such as rate, high PF values, while without fan, it uses the cold true mode of nature, can eliminate noise.The utility model is complete in input Can automatically adjust output voltage in voltage range, and fixed output frequency, and output voltage be with sinewave output, Automatic shaping function is pressed with to alternating current, the utility model contains voltage and current sampling circuit in addition, can anti-surge voltage with Electric current.
Simply the utility model preferred embodiment described above, is not limited to the utility model, all in this practicality Modification, equivalent substitution or improvement made in new technical scope etc., should be included in the model that the utility model is protected In enclosing.

Claims (10)

1. a kind of intelligent sine voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification, it is characterised in that include:
One AC input cell, for incoming transport electricity;
One metal-oxide-semiconductor full-bridge rectification unit, includes the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor and the first electricity Appearance, the drain electrode of first metal-oxide-semiconductor and the source electrode of the 3rd metal-oxide-semiconductor are all connected to the first output end of AC input cell, described The drain electrode of second metal-oxide-semiconductor and the source electrode of the 4th metal-oxide-semiconductor are all connected to the second output end of AC input cell, the first MOS The output head anode of metal-oxide-semiconductor full-bridge rectification unit, the described 3rd are used as after the source electrode interconnection of the source electrode of pipe and the second metal-oxide-semiconductor It is described as the negative pole of output end of metal-oxide-semiconductor full-bridge rectification unit after the drain electrode of metal-oxide-semiconductor and the drain electrode interconnection of the 4th metal-oxide-semiconductor The grid of first metal-oxide-semiconductor, the grid of the second metal-oxide-semiconductor, the grid of the grid of the 3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor are respectively used to access Pwm pulse signal, to make first metal-oxide-semiconductor and the 4th metal-oxide-semiconductor simultaneously turn on, second metal-oxide-semiconductor and the 3rd metal-oxide-semiconductor are simultaneously Conducting, first electric capacity is parallel to the output end of metal-oxide-semiconductor full-bridge rectification unit;
One PFC boost unit, is connected to the output end of metal-oxide-semiconductor full-bridge rectification unit, and the PFC boost unit is used for metal-oxide-semiconductor The output voltage of full-bridge rectification unit carries out boost conversion;
One CLC filter units, include before filter inductance, the first filter capacitor and the second filter capacitor, the filter inductance End is connected to the output end of PFC boost unit, the rear end of the filter inductance as CLC filter units output end, described the One filter capacitor is connected between the front end of filter inductance and ground, second filter capacitor be connected to the rear end of filter inductance with Between ground;
One inversion reversed phase unit, is connected to the output end of CLC filter units, and the inversion reversed phase unit is used to CLC filtering list The output voltage paraphase of member is alternating current.
2. the intelligent sine voltage change-over circuit as claimed in claim 1 based on metal-oxide-semiconductor full-bridge rectification, its feature exists In the PFC boost unit includes boost inductance, first switch pipe, the first commutation diode and electrochemical capacitor, the boosting The front end of inductance is connected to the output end of input block, and the rear end of the boost inductance is connected to the drain electrode of first switch pipe, institute The source ground of first switch pipe is stated, the grid of the first switch pipe is used to access pwm control signal all the way, and described first opens The anode of drain electrode the first commutation diode of connection of pipe is closed, the negative electrode of first commutation diode is used as PFC boost unit Output end, and the positive pole of the negative electrode connection electrochemical capacitor of first commutation diode, the negative pole ground connection of electrochemical capacitor.
3. the intelligent sine voltage change-over circuit as claimed in claim 2 based on metal-oxide-semiconductor full-bridge rectification, its feature exists In being connected with pull down resistor between the grid and source electrode of the first switch pipe.
4. the intelligent sine voltage change-over circuit as claimed in claim 3 based on metal-oxide-semiconductor full-bridge rectification, its feature exists In also including a control unit, the grid of first metal-oxide-semiconductor, the grid of the second metal-oxide-semiconductor, the grid of the 3rd metal-oxide-semiconductor, The grid of four metal-oxide-semiconductors and the grid of first switch pipe are electrically connected in control unit, are controlled by described control unit First metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, the on off operating mode of the 4th metal-oxide-semiconductor and first switch pipe.
5. the intelligent sine voltage change-over circuit as claimed in claim 4 based on metal-oxide-semiconductor full-bridge rectification, its feature exists In, the first output end and the second output end of the AC input cell are connected to control unit by current-limiting resistance respectively, To make control unit obtain the phase of alternating current voltage.
6. the intelligent sine voltage change-over circuit as claimed in claim 1 based on metal-oxide-semiconductor full-bridge rectification, its feature exists In the AC input cell includes socket, the first insurance, lightning protection resistance, common mode inhibition inductance and safety electric capacity, described One insurance is serially connected with the zero line of socket or live wire, and the front end of the common mode inhibition inductance is parallel to socket, the lightning protection resistance The front end of common mode inhibition inductance is parallel to, the safety electric capacity is parallel to the rear end of common mode inhibition inductance, and the common mode inhibition The rear end of inductance as AC input cell output end.
7. the intelligent sine voltage change-over circuit as claimed in claim 4 based on metal-oxide-semiconductor full-bridge rectification, its feature exists In, also include a D/C voltage sampling unit, the D/C voltage sampling unit include the second sampling resistor for being sequentially connected in series and 3rd sampling resistor, the front end of second sampling resistor is connected to the output end of CLC filter units, the 3rd sampling resistor Rear end be connected to control unit, made by second sampling resistor and the 3rd sampling resistor control unit gather CLC filter The electric signal of ripple unit output.
8. the intelligent sine voltage change-over circuit as claimed in claim 4 based on metal-oxide-semiconductor full-bridge rectification, its feature exists In, the inversion reversed phase unit include by second switch pipe, the 3rd switching tube, the 4th switching tube and the 5th switching tube constitute it is inverse Become bridge, the grid of the second switch pipe, the grid of the 3rd switching tube, the grid of the grid of the 4th switching tube and the 5th switching tube Control unit is connected to, the 4th switching tube, the 5th switching tube, the 6th switching tube and are controlled by described control unit Seven switching tube on or off, to make the inversion reversed phase unit output AC voltage.
9. the intelligent sine voltage change-over circuit as claimed in claim 8 based on metal-oxide-semiconductor full-bridge rectification, its feature exists In the output end of the inversion reversed phase unit is in series with the second insurance.
10. the intelligent sine voltage change-over circuit as claimed in claim 4 based on metal-oxide-semiconductor full-bridge rectification, its feature exists In described control unit includes single-chip microcomputer and its peripheral circuit.
CN201720037310.XU 2017-01-12 2017-01-12 A kind of intelligent sine voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification Active CN206379887U (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106787808A (en) * 2017-01-12 2017-05-31 广东百事泰电子商务股份有限公司 A kind of intelligent sine voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification
CN113114057A (en) * 2021-04-13 2021-07-13 深圳市倍轻松科技股份有限公司 Massage instrument control circuit and method and massage instrument

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106787808A (en) * 2017-01-12 2017-05-31 广东百事泰电子商务股份有限公司 A kind of intelligent sine voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification
WO2018129833A1 (en) * 2017-01-12 2018-07-19 广东百事泰电子商务股份有限公司 Smart sine-wave voltage conversion circuit based on mos tube full-bridge rectification
CN113114057A (en) * 2021-04-13 2021-07-13 深圳市倍轻松科技股份有限公司 Massage instrument control circuit and method and massage instrument

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