CN106787808A - A kind of intelligent sine voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification - Google Patents
A kind of intelligent sine voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification Download PDFInfo
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- CN106787808A CN106787808A CN201710022417.1A CN201710022417A CN106787808A CN 106787808 A CN106787808 A CN 106787808A CN 201710022417 A CN201710022417 A CN 201710022417A CN 106787808 A CN106787808 A CN 106787808A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/42—Circuits or arrangements for compensating for or adjusting power factor in converters or inverters
- H02M1/4208—Arrangements for improving power factor of AC input
- H02M1/4225—Arrangements for improving power factor of AC input using a non-isolated boost converter
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M5/00—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases
- H02M5/40—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc
- H02M5/42—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters
- H02M5/44—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters using discharge tubes or semiconductor devices to convert the intermediate dc into ac
- H02M5/453—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters using discharge tubes or semiconductor devices to convert the intermediate dc into ac using devices of a triode or transistor type requiring continuous application of a control signal
- H02M5/458—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters using discharge tubes or semiconductor devices to convert the intermediate dc into ac using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M5/4585—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters using discharge tubes or semiconductor devices to convert the intermediate dc into ac using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only having a rectifier with controlled elements
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0067—Converter structures employing plural converter units, other than for parallel operation of the units on a single load
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
The invention discloses a kind of intelligent sine voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification, its include AC input cell, PFC boost unit, inversion reversed phase unit and：Metal-oxide-semiconductor full-bridge rectification unit, includes the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor and the first electric capacity, and the first metal-oxide-semiconductor and the 4th metal-oxide-semiconductor are simultaneously turned on, and the second metal-oxide-semiconductor and the 3rd metal-oxide-semiconductor are simultaneously turned on；CLC filter units, including filter inductance, the first filter capacitor and the second filter capacitor, the front end of the filter inductance is connected to the output end of PFC boost unit, the rear end of filter inductance as CLC filter units output end, first filter capacitor is connected between the front end of filter inductance and ground, and the second filter capacitor is connected between the rear end of filter inductance and ground.The present invention can improve conversion efficiency, realize fan-free cooling requirements, and reduce noise.
Description
Technical field
The present invention relates to voltage conversion circuit, more particularly to a kind of intelligent sine wave electricity based on metal-oxide-semiconductor full-bridge rectification
Voltage conversion circuit.
Background technology
In the prior art, AC turns AC intelligent boost-buck conversion equipments and is otherwise known as travelling socket, and voltage conversion circuit is should
Use AC turn AC intelligent boost-buck conversion equipments be otherwise known as travelling socket Key Circuit, can AC/AC conversion in realize
It is depressured the function of simultaneously burning voltage and frequency.Just in meaningful formula equipment, rectification part is used mostly diode or rectification to current AC/AC
Bridge makees rectifier cell, and when AC voltages reach 90V, commutation diode or the heating of bridge heap are serious, therefore, set in portable AC-AC
Need to increase fan cooling in standby, but this mode will bring noise problem, while the PF values of input are low.In practical application,
Due to the high speed switching that there is switching tube during voltage conversion so that the outlet side of circuit can have certain high-frequency impulse letter
Number, and then the quality of output voltage is influenceed, thus be difficult to meet conversion requirements.
The content of the invention
The technical problem to be solved in the present invention is, in view of the shortcomings of the prior art, there is provided one kind can improve voltage conversion
The PF values of device, can filter high-frequency crosstalk, reduce noise, reduce product cost, reduce small product size it is whole based on metal-oxide-semiconductor full-bridge
The intelligent sine voltage change-over circuit of stream.
In order to solve the above technical problems, the present invention is adopted the following technical scheme that.
A kind of intelligent sine voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification, it is included：One exchange input is single
Unit, for incoming transport electricity；One metal-oxide-semiconductor full-bridge rectification unit, includes the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor,
Four metal-oxide-semiconductors and the first electric capacity, the drain electrode of first metal-oxide-semiconductor and the source electrode of the 3rd metal-oxide-semiconductor are all connected to AC input cell
First output end, the drain electrode of second metal-oxide-semiconductor and the source electrode of the 4th metal-oxide-semiconductor are all connected to the second output of AC input cell
End, as the output of metal-oxide-semiconductor full-bridge rectification unit after the source electrode interconnection of the source electrode and the second metal-oxide-semiconductor of first metal-oxide-semiconductor
Rectify pole, as metal-oxide-semiconductor full-bridge rectification unit after the drain electrode of the 3rd metal-oxide-semiconductor and the drain electrode interconnection of the 4th metal-oxide-semiconductor
Negative pole of output end, the grid of the grid of first metal-oxide-semiconductor, the grid of the second metal-oxide-semiconductor, the grid of the 3rd metal-oxide-semiconductor and the 4th metal-oxide-semiconductor
Pole is respectively used to access pwm pulse signal, to make first metal-oxide-semiconductor and the 4th metal-oxide-semiconductor simultaneously turn on, second metal-oxide-semiconductor
Simultaneously turned on the 3rd metal-oxide-semiconductor, first electric capacity is parallel to the output end of metal-oxide-semiconductor full-bridge rectification unit；One PFC boost list
Unit, is connected to the output end of metal-oxide-semiconductor full-bridge rectification unit, and the PFC boost unit is used for the defeated of metal-oxide-semiconductor full-bridge rectification unit
Going out voltage carries out boost conversion；One CLC filter units, include filter inductance, the first filter capacitor and the second filter capacitor, institute
The front end for stating filter inductance is connected to the output end of PFC boost unit, and the rear end of the filter inductance is used as CLC filter units
Output end, first filter capacitor is connected between the front end of filter inductance and ground, and second filter capacitor is connected to filter
Between the rear end and ground of ripple inductance；One inversion reversed phase unit, is connected to the output end of CLC filter units, the inversion paraphase list
It is alternating current that unit is used for the output voltage paraphase of CLC filter units.
Preferably, the PFC boost unit includes boost inductance, first switch pipe, the first commutation diode and electrolysis
Electric capacity, the front end of the boost inductance is connected to the output end of input block, and the rear end of the boost inductance is connected to first and opens
The drain electrode of pipe, the source ground of the first switch pipe are closed, the grid of the first switch pipe is used to access PWM controls letter all the way
Number, the anode of drain electrode first commutation diode of connection of the first switch pipe, the negative electrode conduct of first commutation diode
The output end of PFC boost unit, and first commutation diode negative electrode connect electrochemical capacitor positive pole, the negative pole of electrochemical capacitor
Ground connection.
Preferably, it is connected with pull down resistor between the grid and source electrode of the first switch pipe.
Preferably, a control unit, the grid of first metal-oxide-semiconductor, the grid of the second metal-oxide-semiconductor, the 3rd MOS are also included
The grid of the grid of pipe, the grid of the 4th metal-oxide-semiconductor and first switch pipe is electrically connected with control unit, by the control
Unit and control the on off operating mode of the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, the 4th metal-oxide-semiconductor and first switch pipe.
Preferably, first output end and the second output end of the AC input cell are connected by current-limiting resistance respectively
In control unit, to make control unit obtain the phase of alternating current voltage.
Preferably, the AC input cell includes socket, the first insurance, lightning protection resistance, common mode inhibition inductance and peace
Rule electric capacity, first insurance is serially connected with the zero line of socket or live wire, and the front end of the common mode inhibition inductance is parallel to socket,
The lightning protection resistance is parallel to the front end of common mode inhibition inductance, and the safety electric capacity is parallel to the rear end of common mode inhibition inductance, and
The rear end of the common mode inhibition inductance as AC input cell output end.
Preferably, a D/C voltage sampling unit is also included, the D/C voltage sampling unit includes for being sequentially connected in series
Two sampling resistors and the 3rd sampling resistor, the front end of second sampling resistor are connected to the output end of CLC filter units, described
The rear end of the 3rd sampling resistor is connected to control unit, makes control single by second sampling resistor and the 3rd sampling resistor
The electric signal of unit collection CLC filter unit outputs.
Preferably, the inversion reversed phase unit includes being opened by second switch pipe, the 3rd switching tube, the 4th switching tube and the 5th
Close the inverter bridge of pipe composition, the grid of the second switch pipe, the grid of the 3rd switching tube, the grid and the 5th of the 4th switching tube
The grid of switching tube is connected to control unit, and the 4th switching tube, the 5th switching tube, are controlled by described control unit
Six switching tubes and the 7th switching tube on or off, to make the inversion reversed phase unit output AC voltage.
Preferably, the output end of the inversion reversed phase unit is in series with the second insurance.
Preferably, described control unit includes single-chip microcomputer and its peripheral circuit.
In intelligent sine voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification disclosed by the invention, exchange is input into
Unit connects AC power so that alternating current transmission to metal-oxide-semiconductor full-bridge rectification unit, in metal-oxide-semiconductor full-bridge rectification unit, works as L
During for sinusoidal half cycle, the second metal-oxide-semiconductor and the 3rd metal-oxide-semiconductor is made to turn on, electric current is by fiery L lines, the second metal-oxide-semiconductor, the first electric capacity, the 3rd
Metal-oxide-semiconductor forms loop, and when N lines are sinusoidal half cycle, the first metal-oxide-semiconductor and the 4th metal-oxide-semiconductor are turned on, electric current by N lines, the first metal-oxide-semiconductor,
First electric capacity, the 4th metal-oxide-semiconductor form loop；By said process so that form DC voltage on the first electric capacity, first electric capacity
It is, in order to filter the ripple after rectification, and then to obtain smooth direct current and transmit to PFC boost unit to carry out boost conversion, most
By the output voltage paraphase of PFC boost unit it is afterwards alternating current for using using inversion reversed phase unit.Above-mentioned voltage conversion electricity
Lu Zhong, because the conducting internal resistance of metal-oxide-semiconductor is little, so consumption power of the electric current on metal-oxide-semiconductor is with regard to the effect after very little, therefore rectification
Rate can be very high, and can effectively improve the PF values of voltage conversion device, while without fan cooling, and then reduce noise, reduce and produce
Product cost, and reduce small product size.Additionally, in the presence of CLC filter units, high-frequency impulse can will be contained in circuit
High fdrequency component in envelope half-wave level is filtered, and is left behind low frequency component and is transmitted to inversion reversed phase unit so that inversion paraphase list
Unit is converted to the sinusoidal ac of more high-quality, and then greatly improves the quality of output voltage.
Brief description of the drawings
Fig. 1 is the circuit theory diagrams of sine voltage change-over circuit.
Fig. 2 is the circuit block diagram of control unit.
Specific embodiment
The present invention is described in more detail with reference to the accompanying drawings and examples.
The invention discloses a kind of intelligent sine voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification, with reference to Fig. 1 and
Shown in Fig. 2, it is included：
One AC input cell 10, for incoming transport electricity；
One metal-oxide-semiconductor full-bridge rectification unit 20, includes the first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2, the 3rd metal-oxide-semiconductor Q3, the 4th
The drain electrode of metal-oxide-semiconductor Q4 and the first electric capacity C1, the first metal-oxide-semiconductor Q1 is all connected to exchange input with the source electrode of the 3rd metal-oxide-semiconductor Q3
First output end of unit 10, the drain electrode of the second metal-oxide-semiconductor Q2 and the source electrode of the 4th metal-oxide-semiconductor Q4 are all connected to exchange input list
Second output end of unit 10, as metal-oxide-semiconductor after the source electrode interconnection of the source electrode and the second metal-oxide-semiconductor Q2 of the first metal-oxide-semiconductor Q1
After the output head anode of full-bridge rectification unit 20, the drain electrode of the 3rd metal-oxide-semiconductor Q3 and the drain electrode of the 4th metal-oxide-semiconductor Q4 are connected with each other
As the negative pole of output end of metal-oxide-semiconductor full-bridge rectification unit 20, the grid of the first metal-oxide-semiconductor Q1, the grid of the second metal-oxide-semiconductor Q2,
The grid of the 3rd metal-oxide-semiconductor Q3 and the grid of the 4th metal-oxide-semiconductor Q4 are respectively used to access pwm pulse signal, to make first metal-oxide-semiconductor
Q1 and the 4th metal-oxide-semiconductor Q4 are simultaneously turned on, and the second metal-oxide-semiconductor Q2 and the 3rd metal-oxide-semiconductor Q3 are simultaneously turned on, and the first electric capacity C1 is simultaneously
It is coupled to the output end of metal-oxide-semiconductor full-bridge rectification unit 20；
One PFC boost unit 30, is connected to the output end of metal-oxide-semiconductor full-bridge rectification unit 20, and the PFC boost unit 30 is used
Boost conversion is carried out in the output voltage to metal-oxide-semiconductor full-bridge rectification unit 20；
One CLC filter units 40, include filter inductance L3, the first filter capacitor C2 and the second filter capacitor C3, described
The front end of filter inductance L3 is connected to the output end of PFC boost unit 30, and the rear end of the filter inductance L3 filters list as CLC
The output end of unit 40, the first filter capacitor C2 is connected between the front end of filter inductance L3 and ground, second filtered electrical
Hold C3 to be connected between the rear end of filter inductance L3 and ground；
One inversion reversed phase unit 60, is connected to the output end of CLC filter units 40, and the inversion reversed phase unit 60 is used for will
The output voltage paraphase of CLC filter units 40 is alternating current.
In above-mentioned intelligent sine voltage change-over circuit, AC input cell 10 is connected into AC power so that exchange
Metal-oxide-semiconductor full-bridge rectification unit 20 is transported in fax, in metal-oxide-semiconductor full-bridge rectification unit 20, when L is sinusoidal half cycle, makes the 2nd MOS
Pipe Q2 and the 3rd metal-oxide-semiconductor Q3 is turned on, and electric current forms loop by fiery L lines, the second metal-oxide-semiconductor Q2, the first electric capacity C1, the 3rd metal-oxide-semiconductor Q3,
When N lines are sinusoidal half cycle, the first metal-oxide-semiconductor Q1 and the 4th metal-oxide-semiconductor Q4 is turned on, and electric current is by N lines, the first metal-oxide-semiconductor Q1, the first electric capacity
C1, the 4th metal-oxide-semiconductor Q4 form loop；By said process so that form DC voltage on the first electric capacity C1, first electric capacity C1
It is, in order to filter the ripple after rectification, and then to obtain smooth direct current and transmit to PFC boost unit 30 to carry out boost conversion,
By the output sinusoidal half-wave voltage paraphase of PFC boost unit 30 it is finally sinusoidal ac for making using inversion reversed phase unit 60
With.In above-mentioned voltage conversion circuit, metal-oxide-semiconductor is employed as rectifying device, because the conducting internal resistance of metal-oxide-semiconductor is little, so electric
The consumption power flowed on metal-oxide-semiconductor can be very high with regard to the efficiency after very little, therefore rectification, and can effectively improve voltage conversion device
PF values, while without fan cooling, and then reduce noise, reduce product cost, and reduce small product size.Filtered in CLC single
In the presence of unit 40, the high fdrequency component in the envelope half-wave level containing high-frequency impulse in circuit can be filtered, left behind low
Frequency component is transmitted to inversion reversed phase unit 60 so that inversion reversed phase unit 60 is converted to the sinusoidal ac of more high-quality, and then
Greatly improve the quality of output voltage.
To cause that the first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2, the 3rd metal-oxide-semiconductor Q3, the 4th metal-oxide-semiconductor Q4 are responded rapidly to, the present invention
Four resistance (R1, R2, R3, R4) are employed, respectively as four pull down resistors of rectification metal-oxide-semiconductor preventing from misleading.
On boosting part, the PFC boost unit 30 includes boost inductance L2, first switch pipe Q5, the first rectification
The front end of diode D1 and electrochemical capacitor C2, the boost inductance L2 is connected to the output end of input block 10, described liter of piezoelectricity
The rear end for feeling L2 is connected to the drain electrode of first switch pipe Q5, the source ground of the first switch pipe Q5, the first switch pipe
The grid of Q5 is used to access pwm control signal all the way, the first commutation diode D1's of drain electrode connection of the first switch pipe Q5
Anode, the negative electrode of the first commutation diode D1 as PFC boost unit 30 output end, and first commutation diode D1
Negative electrode connection electrochemical capacitor C2 positive pole, the negative pole ground connection of electrochemical capacitor C2.
Further, it is connected with pull down resistor R5 between the grid and source electrode of the first switch pipe Q5.
In above-mentioned PFC boost unit 30, if input line voltage is less than 230V, control unit output high-frequency controling signal
, to the GATE of first switch pipe Q5, the half-wave alternating voltage after four full-bridge rectifications of metal-oxide-semiconductor composition is by first switch pipe for PWM5
Q5 is boosted in PFC boost mode, and specific boosting principle is：When first switch pipe Q5 is turned on, the electricity on the first electric capacity C1
Flow through boost inductance L2, first switch pipe Q5 to GND and form loop, boost inductance L2 storage energy；When first switch pipe Q5 is closed
When disconnected, the induced electromotive force more much higher than input voltage can be formed on boost inductance, induced electromotive force is through the rectification of continued flow tube first
Diode D1 is carried out forming unidirectional pulsating volage after rectification and is given high-frequency filter circuit filtering again.And first switch pipe Q5 is root
The input line voltage adopted according to alternating current sampling circuit for modulation fundamental wave controls the change in duty cycle of PWM1, through the first rectification
Level after diode D1 rectifications is the but envelope half-wave level containing high-frequency impulse by sinusoidal variations.When input line voltage etc.
Single-chip microcomputer U1 closes high frequency modulated circuit when 230V voltages, and first switch pipe Q5 does not work；MOS full-bridge rectifications are filtered
Voltage after ripple is directly exported through L2, the first commutation diode D1.
In order to realize closed-loop control, the present embodiment also includes a control unit 70, the grid of the first metal-oxide-semiconductor Q1,
The grid of the second metal-oxide-semiconductor Q2, the grid difference of the grid, the grid of the 4th metal-oxide-semiconductor Q4 and first switch pipe Q5 of the 3rd metal-oxide-semiconductor Q3
Control unit 70 is electrically connected at, the first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2, the 3rd MOS are controlled by described control unit 70
The on off operating mode of pipe Q3, the 4th metal-oxide-semiconductor Q4 and first switch pipe Q5.Further, described control unit 70 includes single-chip microcomputer U1
And its peripheral circuit.
Further, on the sampling to AC signal, the first output end of the AC input cell 10 and second defeated
Go out end and be connected to control unit 70 by current-limiting resistance respectively, to make control unit 70 obtain the phase of alternating current voltage.Tool
Body refers to that control unit passes through the width of sampling resistor (R10, R11, R12, R14, R17, R18, R19, R20) Sample AC voltage
Value and phase, and then control the first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2, the 3rd metal-oxide-semiconductor Q3, the conduction phase of the 4th metal-oxide-semiconductor Q4 with
Time.
In the present embodiment, the AC input cell 10 includes socket, the first insurance F2, lightning protection resistance RV1, common mode suppression
Inductance L1 processed and safety electric capacity CX1, described first insures F2 is serially connected with the zero line of socket or live wire, the common mode inhibition inductance
The front end of L1 is parallel to socket, and the lightning protection resistance RV1 is parallel to the front end of common mode inhibition inductance L1, the safety electric capacity CX1
Be parallel to the rear end of common mode inhibition inductance L1, and the common mode inhibition inductance L1 rear end as AC input cell 10 output
End.
Used as a kind of preferred embodiment, the present embodiment also includes a D/C voltage sampling unit 40, and the D/C voltage sampling is single
Unit 40 includes the second sampling resistor R13 and the 3rd sampling resistor R15 being sequentially connected in series, before the second sampling resistor R13
End is connected to the output end of CLC filter units 40, and the rear end of the 3rd sampling resistor R15 is connected to control unit 70, by
The second sampling resistor R13 and the 3rd sampling resistor R15 and make control unit 70 gather the telecommunications of the output of CLC filter units 40
Number.Above-mentioned voltage sample part is made up of R13, R15, and the voltage for that will adopt gives control unit, and then determines that inversion is fallen
The phase and ON time of facies unit.
On Converting Unit, the inversion reversed phase unit 60 includes being opened by second switch pipe Q6, the 3rd switching tube Q7, the 4th
Close the inverter bridge of pipe Q8 and the 5th switching tube Q9 compositions, the grid of the second switch pipe Q6, the grid of the 3rd switching tube Q7, the
The grid of four switching tube Q8 and the grid of the 5th switching tube Q9 are connected to control unit 70, by described control unit 70
The 4th switching tube Q1, the 5th switching tube Q2, the 6th switching tube Q3 and the 7th switching tube Q4 on or off are controlled, it is described inverse to make
Become the output AC voltage of reversed phase unit 60.Further, the output end of the inversion reversed phase unit 60 is in series with the second insurance F1.
Above-mentioned inversion reversed phase unit 50 is by second switch pipe Q6, the 3rd switching tube Q7, the switches of the 4th switching tube Q8 and the 5th
Pipe Q9 constitute, after filtering after DC voltage by second switch pipe Q6, load, the 5th switching tube Q9 is formed loop to load confession
Electricity, forms first half period power frequency level；Second half period power frequency level is opened by the 4th switching tube Q8, load, the 3rd
Close pipe Q7 and form loop, a complete power frequency amendment alternating current wave pressure is so formed in load.Control unit is exported
Pwm signal send out PWM6, PWM7L, PWM8, PWM9L respectively after drive circuit to second switch pipe Q6, the 3rd switching tube
The GATE poles of Q7, the 4th switching tube Q8 and the 5th switching tube Q9.Phase in inversion phase inverter is with frequency according to control chip
The pattern of inner setting is operated.
Intelligent sine voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification disclosed by the invention, with high efficiency, height
The features such as PF values, while without fan, it uses the cold true mode of nature, can eliminate noise.The present invention is in input full voltage range
It is interior to automatically adjust output voltage, and fixed output frequency, and output voltage is with sinewave output, to alternating current
Automatic shaping function is pressed with, the present invention contains voltage and current sampling circuit in addition, can anti-surge voltage and electric current.
The above is preferred embodiments of the present invention, is not intended to limit the invention, all in technology model of the invention
Interior done modification, equivalent or improvement etc. are enclosed, be should be included in the range of of the invention protection.
Claims (10)
1. a kind of intelligent sine voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification, it is characterised in that include：
One AC input cell (10), for incoming transport electricity；
One metal-oxide-semiconductor full-bridge rectification unit (20), include the first metal-oxide-semiconductor (Q1), the second metal-oxide-semiconductor (Q2), the 3rd metal-oxide-semiconductor (Q3),
4th metal-oxide-semiconductor (Q4) and the first electric capacity (C1), the drain electrode of first metal-oxide-semiconductor (Q1) and the source electrode of the 3rd metal-oxide-semiconductor (Q3) connect
It is connected to the first output end of AC input cell (10), the drain electrode of second metal-oxide-semiconductor (Q2) and the source electrode of the 4th metal-oxide-semiconductor (Q4)
It is all connected to the second output end of AC input cell (10), the source electrode of first metal-oxide-semiconductor (Q1) and the second metal-oxide-semiconductor (Q2)
Source electrode be connected with each other after as metal-oxide-semiconductor full-bridge rectification unit (20) output head anode, the drain electrode of the 3rd metal-oxide-semiconductor (Q3) and
As the negative pole of output end of metal-oxide-semiconductor full-bridge rectification unit (20), described first after the drain electrode interconnection of the 4th metal-oxide-semiconductor (Q4)
The grid of the grid of metal-oxide-semiconductor (Q1), the grid of the second metal-oxide-semiconductor (Q2), the grid of the 3rd metal-oxide-semiconductor (Q3) and the 4th metal-oxide-semiconductor (Q4)
It is respectively used to access pwm pulse signal, to make first metal-oxide-semiconductor (Q1) and the 4th metal-oxide-semiconductor (Q4) simultaneously turn on, described second
Metal-oxide-semiconductor (Q2) and the 3rd metal-oxide-semiconductor (Q3) are simultaneously turned on, and first electric capacity (C1) is parallel to metal-oxide-semiconductor full-bridge rectification unit (20)
Output end；
One PFC boost unit (30), is connected to the output end of metal-oxide-semiconductor full-bridge rectification unit (20), the PFC boost unit (30)
Boost conversion is carried out for the output voltage to metal-oxide-semiconductor full-bridge rectification unit (20)；
One CLC filter units (40), include filter inductance (L3), the first filter capacitor (C2) and the second filter capacitor (C3),
The front end of the filter inductance (L3) is connected to the output end of PFC boost unit (30), and the rear end of the filter inductance (L3) is made
It is the output end of CLC filter units (40), first filter capacitor (C2) is connected to the front end and ground of filter inductance (L3)
Between, second filter capacitor (C3) is connected between the rear end of filter inductance (L3) and ground；
One inversion reversed phase unit (60), is connected to the output end of CLC filter units (40), and the inversion reversed phase unit (60) is used for
It is alternating current by the output voltage paraphase of CLC filter units (40).
2. the intelligent sine voltage change-over circuit of metal-oxide-semiconductor full-bridge rectification is based on as claimed in claim 1, and its feature exists
In, the PFC boost unit (30) include boost inductance (L2), first switch pipe (Q5), the first commutation diode (D1) and
Electrochemical capacitor (C2), the front end of the boost inductance (L2) is connected to the output end of input block (10), the boost inductance
(L2) rear end is connected to the drain electrode of first switch pipe (Q5), the source ground of the first switch pipe (Q5), and described first opens
Closing the grid of pipe (Q5) is used to access pwm control signal all the way, and the drain electrode of the first switch pipe (Q5) connects the first rectification two
The anode of pole pipe (D1), the negative electrode of first commutation diode (D1) as PFC boost unit (30) output end, and this
The positive pole of negative electrode connection electrochemical capacitor (C2) of one commutation diode (D1), the negative pole ground connection of electrochemical capacitor (C2).
3. the intelligent sine voltage change-over circuit of metal-oxide-semiconductor full-bridge rectification is based on as claimed in claim 2, and its feature exists
In being connected with pull down resistor (R5) between the grid and source electrode of the first switch pipe (Q5).
4. the intelligent sine voltage change-over circuit of metal-oxide-semiconductor full-bridge rectification is based on as claimed in claim 3, and its feature exists
In also including a control unit (70), the grid of first metal-oxide-semiconductor (Q1), the grid of the second metal-oxide-semiconductor (Q2), the 3rd MOS
Grid, the grid of the 4th metal-oxide-semiconductor (Q4) and the grid of first switch pipe (Q5) for managing (Q3) are electrically connected with control unit
(70) the first metal-oxide-semiconductor (Q1), the second metal-oxide-semiconductor (Q2), the 3rd metal-oxide-semiconductor (Q3), the 4th, are controlled by described control unit (70)
The on off operating mode of metal-oxide-semiconductor (Q4) and first switch pipe (Q5).
5. the intelligent sine voltage change-over circuit of metal-oxide-semiconductor full-bridge rectification is based on as claimed in claim 4, and its feature exists
In first output end and the second output end of the AC input cell (10) are connected to control list by current-limiting resistance respectively
First (70), to make control unit (70) obtain the phase of alternating current voltage.
6. the intelligent sine voltage change-over circuit of metal-oxide-semiconductor full-bridge rectification is based on as claimed in claim 1, and its feature exists
In the AC input cell (10) includes socket, the first insurance (F2), lightning protection resistance (RV1), common mode inhibition inductance (L1)
With safety electric capacity (CX1), described first insures (F2) is serially connected with the zero line of socket or live wire, the common mode inhibition inductance (L1)
Front end be parallel to socket, the lightning protection resistance (RV1) is parallel to the front end of common mode inhibition inductance (L1), the safety electric capacity
(CX1) rear end of common mode inhibition inductance (L1) is parallel to, and the rear end of the common mode inhibition inductance (L1) is single as exchange input
The output end of first (10).
7. the intelligent sine voltage change-over circuit of metal-oxide-semiconductor full-bridge rectification is based on as claimed in claim 4, and its feature exists
In, a D/C voltage sampling unit (40) is also included, the D/C voltage sampling unit (40) includes second for being sequentially connected in series and adopts
Sample resistance (R13) and the 3rd sampling resistor (R15), the front end of second sampling resistor (R13) are connected to CLC filter units
(40) output end, the rear end of the 3rd sampling resistor (R15) is connected to control unit (70), by the described second sampling electricity
Hinder (R13) and the 3rd sampling resistor (R15) and make control unit (70) gather the electric signal of CLC filter units (40) outputs.
8. the intelligent sine voltage change-over circuit of metal-oxide-semiconductor full-bridge rectification is based on as claimed in claim 4, and its feature exists
In the inversion reversed phase unit (60) is including by second switch pipe (Q6), the 3rd switching tube (Q7), the 4th switching tube (Q8) and
The inverter bridge of five switching tubes (Q9) composition, the grid of the second switch pipe (Q6), the grid of the 3rd switching tube (Q7), the 4th open
The grid of the grid and the 5th switching tube (Q9) that close pipe (Q8) is connected to control unit (70), by described control unit
(70) control the 4th switching tube (Q1), the 5th switching tube (Q2), the 6th switching tube (Q3) and the 7th switching tube (Q4) turn on or
Cut-off, to make inversion reversed phase unit (60) output AC voltage.
9. the intelligent sine voltage change-over circuit of metal-oxide-semiconductor full-bridge rectification is based on as claimed in claim 8, and its feature exists
In the output end of the inversion reversed phase unit (60) is in series with the second insurance (F1).
10. the intelligent sine voltage change-over circuit of metal-oxide-semiconductor full-bridge rectification is based on as claimed in claim 4, and its feature exists
In described control unit (70) includes single-chip microcomputer (U1) and its peripheral circuit.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710022417.1A CN106787808A (en) | 2017-01-12 | 2017-01-12 | A kind of intelligent sine voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification |
| PCT/CN2017/081782 WO2018129833A1 (en) | 2017-01-12 | 2017-04-25 | Smart sine-wave voltage conversion circuit based on mos tube full-bridge rectification |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710022417.1A CN106787808A (en) | 2017-01-12 | 2017-01-12 | A kind of intelligent sine voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification |
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| Publication Number | Publication Date |
|---|---|
| CN106787808A true CN106787808A (en) | 2017-05-31 |
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|---|---|---|---|
| CN201710022417.1A Pending CN106787808A (en) | 2017-01-12 | 2017-01-12 | A kind of intelligent sine voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification |
Country Status (2)
| Country | Link |
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| CN (1) | CN106787808A (en) |
| WO (1) | WO2018129833A1 (en) |
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| CN116131618B (en) * | 2022-12-13 | 2024-04-19 | 深圳麦格米特电气股份有限公司 | Aging test device, method and system |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040012343A1 (en) * | 2002-07-19 | 2004-01-22 | Nostwick Allan Albert | Lighting control system with variable arc control including start-up circuit for providing a bias voltage supply |
| CN1564440A (en) * | 2004-03-27 | 2005-01-12 | 赵晶 | Low temp rising high precision boosting regulated supply |
| CN106301030A (en) * | 2015-06-24 | 2017-01-04 | 三星电机株式会社 | Synchronous Rectifier And Control Circuit Thereof |
| CN206379887U (en) * | 2017-01-12 | 2017-08-04 | 广东百事泰电子商务股份有限公司 | A kind of intelligent sine voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5233509A (en) * | 1992-04-03 | 1993-08-03 | International Business Machines Corporation | Switch-mode AC-to-DC converter |
| CN203104332U (en) * | 2013-01-10 | 2013-07-31 | 浙江中碳科技有限公司 | Universal AC adapter for AC and DC |
| CN105186892B (en) * | 2014-05-27 | 2018-06-08 | 晶宝智电科技有限公司 | Numerical digit AC/DC power supply changeover devices |
| CN205490173U (en) * | 2016-02-22 | 2016-08-17 | 北京工业大学 | Ocean electromagnetic surveying emitter |
-
2017
- 2017-01-12 CN CN201710022417.1A patent/CN106787808A/en active Pending
- 2017-04-25 WO PCT/CN2017/081782 patent/WO2018129833A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040012343A1 (en) * | 2002-07-19 | 2004-01-22 | Nostwick Allan Albert | Lighting control system with variable arc control including start-up circuit for providing a bias voltage supply |
| CN1564440A (en) * | 2004-03-27 | 2005-01-12 | 赵晶 | Low temp rising high precision boosting regulated supply |
| CN106301030A (en) * | 2015-06-24 | 2017-01-04 | 三星电机株式会社 | Synchronous Rectifier And Control Circuit Thereof |
| CN206379887U (en) * | 2017-01-12 | 2017-08-04 | 广东百事泰电子商务股份有限公司 | A kind of intelligent sine voltage change-over circuit based on metal-oxide-semiconductor full-bridge rectification |
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| WO2018129833A1 (en) | 2018-07-19 |
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