CN206260190U - A kind of vacuum sealed radiating structure - Google Patents
A kind of vacuum sealed radiating structure Download PDFInfo
- Publication number
- CN206260190U CN206260190U CN201621138714.XU CN201621138714U CN206260190U CN 206260190 U CN206260190 U CN 206260190U CN 201621138714 U CN201621138714 U CN 201621138714U CN 206260190 U CN206260190 U CN 206260190U
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- electronic system
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- seal
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- 239000000758 substrate Substances 0.000 claims abstract description 44
- 238000001816 cooling Methods 0.000 claims abstract description 36
- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 13
- 230000008569 process Effects 0.000 claims abstract description 12
- 230000017525 heat dissipation Effects 0.000 claims abstract description 6
- 238000005452 bending Methods 0.000 claims abstract description 3
- 238000007789 sealing Methods 0.000 claims description 29
- 239000002826 coolant Substances 0.000 claims description 12
- 238000005086 pumping Methods 0.000 claims description 7
- 238000005728 strengthening Methods 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000007787 solid Substances 0.000 claims description 3
- 230000035772 mutation Effects 0.000 claims description 2
- 230000002787 reinforcement Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 27
- 238000005516 engineering process Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- -1 tin silk Chemical compound 0.000 description 1
- 239000002918 waste heat Substances 0.000 description 1
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201621138714.XU CN206260190U (en) | 2016-10-19 | 2016-10-19 | A kind of vacuum sealed radiating structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201621138714.XU CN206260190U (en) | 2016-10-19 | 2016-10-19 | A kind of vacuum sealed radiating structure |
Publications (1)
Publication Number | Publication Date |
---|---|
CN206260190U true CN206260190U (en) | 2017-06-16 |
Family
ID=59023239
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201621138714.XU Active CN206260190U (en) | 2016-10-19 | 2016-10-19 | A kind of vacuum sealed radiating structure |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN206260190U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109496108A (en) * | 2018-11-23 | 2019-03-19 | 李洪刚 | A kind of phase-change heat sink manufacture craft |
-
2016
- 2016-10-19 CN CN201621138714.XU patent/CN206260190U/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109496108A (en) * | 2018-11-23 | 2019-03-19 | 李洪刚 | A kind of phase-change heat sink manufacture craft |
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Legal Events
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GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200820 Address after: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee after: Institute of Microelectronics of the Chinese Academy of Sciences Address before: 100190, No. 19 West Fourth Ring Road, Beijing, Haidian District Patentee before: Aerospace Information Research Institute,Chinese Academy of Sciences Effective date of registration: 20200820 Address after: 100190, No. 19 West Fourth Ring Road, Beijing, Haidian District Patentee after: Aerospace Information Research Institute,Chinese Academy of Sciences Address before: 9 Dengzhuang South Road, Haidian District, Beijing 100094 Patentee before: Academy of Opto-Electronics, Chinese Academy of Sciences |