CN206076226U - The WAT test structures of alignment skew in monitoring AR techniques - Google Patents
The WAT test structures of alignment skew in monitoring AR techniques Download PDFInfo
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- CN206076226U CN206076226U CN201621094197.0U CN201621094197U CN206076226U CN 206076226 U CN206076226 U CN 206076226U CN 201621094197 U CN201621094197 U CN 201621094197U CN 206076226 U CN206076226 U CN 206076226U
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Abstract
This utility model provides a kind of WAT test structures of alignment skew in monitoring AR techniques, the WAT test structures include multiple test chains, each described test chain includes multiple test cells and metal level, and each test cell includes the polysilicon layer of bottom and is arranged at the connection through hole of two end surfaces of the polysilicon layer；The metal level is located at the connection via top, and the test cell is sequentially connected in series by the metal level；Multiple test chains are joined end to end successively by the metal level, form the WAT test structures of chain type.This utility model can check alignment offset problem of the wafer in AR techniques, while the skew of X-direction or Y-direction can also be judged.
Description
Technical field
This utility model is related to semiconductor test technical field, more particularly to a kind of monitoring AR (action request)
WAT (Wafer Acceptance Test, the wafer acceptability test) test structure of alignment skew in technique.
Background technology
With the progress of technology, integrated circuit fabrication process requires increasingly to increase, and due to the IC manufacturing cycle it is long,
High cost, therefore, the manufacture efficiency and quality for improving manufacturing process is particularly important.Industry is led in ic manufacturing process
Often in each IC chip periphery manufacture WAT (Wafer Acceptance Test, wafer acceptability test) of wafer
Structure, then after finalization of the manufacture WAT structures are detected, to test to corresponding manufacturing process.If in wafer system
When all kinds of detections such as electrical detection are carried out to WAT structures after the completion of making, it is found that the WAT structures have short circuit, open circuit or electric leakage etc. to lose
Effect situation, then by WAT structures are carried out it is ineffectiveness analysis come analyze failure occur the reason for, adjusted to technique accordingly
Whole and improvement.
In semiconductor fabrication, AR (Action Request) technique to be referred to and remove oxidation in big active area (AA)
The process of thing, wherein AR techniques specifically include AR-PH (Action Request Photo) and AR-ET (Action Request
Etch), during AR-PH, alignment skew (OVL, Overlay) often occurs causes STI (shallow trench isolation) region quilt
Overetch or damage, the polysilicon surface uniformity in subsequent technique deposition are deteriorated, and have a strong impact on wafer quality.
Existing WAT test structures are difficult accurately to monitor the problem that sti region is damaged by overetch, cannot also sentence
The reason for disconnected WAT structural failures is that the skew in which direction of alignment is caused.
Thus, it is necessary to propose a kind of effective method to monitor that alignment offsets.
Utility model content
The shortcoming of prior art in view of the above, the purpose of this utility model be a kind of monitoring AR techniques are provided in cover
The WAT test structures of quasi- skew, for solve WAT test structures of the prior art be difficult to accurately to monitor sti region it is excessive
The problem of etching, the problem that cannot also judge alignment offset direction.
For achieving the above object, this utility model provides a kind of WAT test structures of alignment skew in monitoring AR techniques, institute
Stating WAT test structures includes multiple test chains, and each described test chain includes multiple test cells and metal level, each test
Unit includes the polysilicon layer of bottom and is arranged at the connection through hole of two end surfaces of the polysilicon layer；The metal level is located at institute
Connection via top is stated, the test cell is sequentially connected in series by the metal level；Multiple test chains pass through the metal
Layer is joined end to end successively, forms the WAT test structures of chain type.
In an embodiment of the present utility model, the WAT test structures include the first test structure and the second test
Structure, first test structure and second test structure include first end, the second end and multiple test chains, its
In, multiple test parallel longitudinal arrangements of chain in first test structure, and the test chain by the metal level according to
Secondary head and the tail connection；Multiple test horizontally-parallel arrangements of chain in second test structure, and the test chain is by described
Head and the tail connect metal level successively；Second end of first test structure is with the first end of second test structure by described
Metal level is connected.
In an embodiment of the present utility model, the WAT test structures also include the first testing weld pad, the second test
Pad and the 3rd testing weld pad, first testing weld pad are connected with the first end of first test structure, and described second
Testing weld pad is connected with the second end of second test structure, the 3rd testing weld pad and first test structure and
The junction of second test structure is connected.
In an embodiment of the present utility model, the number phase of the test cell that each described test chain includes
Deng.
In an embodiment of the present utility model, number of the test cell that each described test chain includes not phase
Deng.
In an embodiment of the present utility model, the polysilicon layer is located at shallow channel isolation area surface.
In an embodiment of the present utility model, in the connection through hole, tungsten is filled with.
As described above, the WAT test structures that alignment offsets in monitoring AR techniques of the present utility model, with following beneficial effect
Really：
(1) using the WAT test structures, the alignment skew in all of wafer AR-PH can be checked.
(2) problem of alignment skew is not only checked, while the skew of X-direction or Y-direction can also be judged.
(3) the WAT test structures are suitable to the demand of different alignment precisions.
(4) the WAT test structures can be used for needing all technical processs for monitoring alignment skew in AR.
Description of the drawings
Fig. 1 is the top view of the WAT test structures that this utility model monitors alignment skew in AR techniques.
Fig. 2 is the side view of WAT test structures under normal circumstances.
Fig. 3 is the side view of WAT test structures under abnormal conditions.
Component label instructions
1 test cell
11 polysilicon layers
12 connection through holes
13 metal levels
2 first test structures
3 second test structures
4 active areas
5 AR areas
6 shallow channel isolation areas
7 first survey pad
8 second survey pad
9 the 3rd survey pad
Specific embodiment
Embodiment of the present utility model is illustrated by particular specific embodiment below, those skilled in the art can be by this
Content disclosed by description understands other advantages of the present utility model and effect easily.
Refer to Fig. 1 to Fig. 3.It should be clear that structure, ratio, size depicted in this specification institute accompanying drawings etc., only to
Coordinate the content disclosed in description, so that those skilled in the art understands and reads, be not limited to this utility model
Enforceable qualificationss, therefore do not have technical essential meaning, the modification of any structure, the change of proportionate relationship or size
Adjustment, under the effect for not affecting this utility model can be generated and the purpose that can be reached, still all should fall in this utility model
In the range of disclosed technology contents are obtained and can be covered.Meanwhile, in this specification it is cited as " on ", D score, " left side ",
The term on " right side ", " centre " and " one " etc., is merely convenient to understanding for narration, and it is enforceable to be not used to restriction this utility model
Scope, being altered or modified for its relativeness are under without essence change technology contents, enforceable when this utility model is also considered as
Category.
Fig. 1 is referred to, this utility model provides a kind of WAT test structures of alignment skew in monitoring AR techniques, the WAT
Test structure includes multiple test chains, and each described test chain includes multiple test cells 1 and metal level 13, and each test is single
Unit 1 includes the polysilicon layer 11 of bottom and is arranged at the connection through hole 12 of 11 liang of end surfaces of the polysilicon layer；The metal level
13 are located at the top of the connection through hole 12, and the test cell 1 is sequentially connected in series by the metal level 13；Multiple test chains
Joined end to end by the metal level 13 successively, form the WAT test structures of chain type.
Fig. 1 Zhong AR areas 5 are the regions for needing photoetching, different according to the precision of making technology demand, freely can be adjusted
The distance of AR areas 5 and active area 4 in WAT test structures, namely：When higher alignment precision is needed, can be by 5 domain of AR areas
Area is extended to the border closer to (may not exceed) active area 4；Conversely, when alignment precision is less demanding, AR areas can make in 5 domain
Make from 4 frontier distance of active area more farther out.
Need to connect through hole 12 (contact) in transistor technology and through hole (via) is used as the extraction of device, connect
Through hole 12 and through hole are the coupling parts between different layers, and connection through hole 12 is between polysilicon or diffusion layer and metal, and leads to
Hole is between metal and metal.It should be noted that connection through hole 12 described here and through hole are not in broad sense
Through hole, but metal material has been inserted in connection through hole 12 and through hole, form electrically conductive plug structure.
So, polysilicon layer 11- connection through hole 12- metal levels 13 constitute the WAT structures of a chain type, the WAT tests
Structure is similar to " Serpentiss " shape of a dipping and heaving, equivalent to a wire, can carry out testing current by applied voltage.
As an example, the material of the metal level 13 is preferably tungsten, copper or aluminum.
As an example, the WAT test structures include the first test structure 2 and the second test structure 3, first test
Structure 2 and second test structure 3 include first end, the second end and multiple test chains, wherein, first test
Multiple test parallel longitudinal arrangements of chain in structure 2, and the test chain connected by the metal level 13 successively head and the tail；Institute
State the horizontally-parallel arrangement of the multiple test chains in the second test structure 3, and the test chain by the metal level 13 successively
Head and the tail connect；Second end of first test structure 2 passes through the metal level 13 with the first end of second test structure 3
It is connected.
First test structure 2 and second test structure 3 are suitable to parallel longitudinal arrangement and horizontally-parallel row
The wafer of cloth structure.
As an example, the WAT test structures also include the first testing weld pad 7, the second testing weld pad 8 and the 3rd test weldering
Disk 9, first testing weld pad 7 are connected with the first end of first test structure 2, second testing weld pad 8 and institute
The second end for stating the second test structure 3 is connected, the 3rd testing weld pad 9 and first test structure 2 and described second
The junction of test structure 3 is connected.
Show in Fig. 1 that the number of the test cell 1 that each described test chain includes is equal；But, as an example, often
The number of the test cell 1 that the individual test chain includes can also be unequal.
WAT test structures of the present utility model are made in the IC chip periphery of wafer and near active area 4, described
Wafer includes Semiconductor substrate (not shown), and the Semiconductor substrate includes active area 4 and the shallow trench between active area 4
Isolation area 6, the active area 4 at least two, the characteristic size of the active area 4 is identical or different.
As an example, the polysilicon layer 11 is located at 6 surface of the shallow channel isolation area, the bottom of the connection through hole 12
With the upper surface of the polysilicon layer 11/be connected, the top of the connection through hole 12 and the lower surface of the metal level 13
Contact/connection, and the metal level 13 is located at the top of the polysilicon layer 11 and/or active area 4, the WAT test structures
Tested to monitor the skew of the alignment in AR techniques with WAT.
As an example, tungsten is filled with the connection through hole 12, it is tungsten plug that industry is commonly referred to as the connection through hole 12.
The operation principle of the WAT test structures of alignment skew in this utility model monitoring AR techniques：
13 chain of polysilicon layer 11- connections through hole 12- metal levels is series connection, when measuring resistance value and being infinitely great, can be with
Judge that alignment precision there is a problem, namely alignment offset by.
If alignment skew little (alignment precision is high) in AR-PH techniques, shallow channel isolation area 6 is not etched and intact nothing
Damage, its surface smoothness is good, as shown in Fig. 2 11 surface uniformity of polysilicon layer then in subsequent technique deposition is good, then RC chains number
It is similar with the data value of the RC chains for being normally connected through hole 12 according to value.
If alignment offset variation is big (alignment precision is low) in AR-PH techniques, shallow channel isolation area 6 is by overetch
Damage, as shown in the position for drawing circle in Fig. 3, then 11 surface uniformity of polysilicon layer in subsequent technique deposition is deteriorated, and CT is not
Easily good contact being formed with 11 surface of polysilicon layer, ultimately resulting in the disconnection of RC chains, the resistance value for being embodied in test is infinitely great.
Meanwhile, the test structure can also teach that the alignment skew of AR-PH is horizontal or longitudinal direction shifts.
For example, for the test between the first test structure 2, namely the first testing weld pad 7 and the 3rd testing weld pad 9 is tied
Structure, only when AR processing procedures laterally shift, test structure is only possible to disconnect.In the same manner, for the second test structure 3,
Test structure i.e. between the 3rd testing weld pad 9 and the second testing weld pad 8, only when longitudinal direction shifts, test result
Can just be affected.So, if the test result exception of the first testing weld pad 7 and the second testing weld pad 8, by the 3rd test
Pad 9 can be used to judge that test structure is horizontal or longitudinal direction there occurs that alignment offsets.
In sum, the WAT test structures that alignment offsets in monitoring AR techniques of the present utility model, can check all crystalline substances
Alignment offset problem of the circle in AR-PH, while the skew of X-direction or Y-direction can also be judged；The WAT test knots
In structure, the distance in AR areas to active area both sides can be adjusted, and be suitable for the demand of different alignment precisions；The WAT test structures
Can be used for needing all technical processs for monitoring alignment skew in AR.
Above-described embodiment only illustrative principle of the present utility model and its effect are new not for this practicality is limited
Type.Any person skilled in the art all can be carried out to above-described embodiment under without prejudice to spirit and the scope of the present utility model
Modifications and changes.Therefore, such as those of ordinary skill in the art without departing from the essence disclosed in this utility model
All equivalent modifications completed under god and technological thought or change, should be covered by claim of the present utility model.
Claims (7)
1. the WAT test structures that alignment offsets in a kind of monitoring AR techniques, it is characterised in that the WAT test structures include many
Individual test chain, each described test chain include multiple test cells and metal level, and each test cell includes the polycrystalline of bottom
Silicon layer and the connection through hole for being arranged at two end surfaces of the polysilicon layer；The metal level is located at the connection via top, institute
State test cell to be sequentially connected in series by the metal level；Multiple test chains are joined end to end successively by the metal level, shape
Into the WAT test structures of chain type.
2. in monitoring AR techniques according to claim 1 alignment skew WAT test structures, it is characterised in that including the
One test structure and the second test structure, first test structure and second test structure include first end, second
End and multiple test chains, wherein, multiple test parallel longitudinal arrangements of chain in first test structure, and the survey
Examination chain is connected by the metal level successively head and the tail；Multiple test horizontally-parallel arrangements of chain in second test structure,
And the test chain is connected by the metal level successively head and the tail；Second end of first test structure and the described second test
The first end of structure is connected by the metal level.
3. the WAT test structures that alignment offsets in monitoring AR techniques according to claim 2, it is characterised in that also include
First testing weld pad, the second testing weld pad and the 3rd testing weld pad, first testing weld pad and first test structure
First end is connected, and second testing weld pad is connected with the second end of second test structure, the 3rd test weldering
Disk is connected with the junction of first test structure and second test structure.
4. the WAT test structures that alignment offsets in monitoring AR techniques according to claim 1, it is characterised in that each institute
The number for stating the test cell that test chain includes is equal.
5. the WAT test structures that alignment offsets in monitoring AR techniques according to claim 1, it is characterised in that each institute
The number for stating the test cell that test chain includes is unequal.
6. the WAT test structures that alignment offsets in monitoring AR techniques according to claim 1, it is characterised in that described many
Crystal silicon layer is located at shallow channel isolation area surface.
7. the WAT test structures that alignment offsets in monitoring AR techniques according to claim 1, it is characterised in that the company
Connect.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621094197.0U CN206076226U (en) | 2016-09-29 | 2016-09-29 | The WAT test structures of alignment skew in monitoring AR techniques |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621094197.0U CN206076226U (en) | 2016-09-29 | 2016-09-29 | The WAT test structures of alignment skew in monitoring AR techniques |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206076226U true CN206076226U (en) | 2017-04-05 |
Family
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621094197.0U Expired - Fee Related CN206076226U (en) | 2016-09-29 | 2016-09-29 | The WAT test structures of alignment skew in monitoring AR techniques |
Country Status (1)
| Country | Link |
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| CN (1) | CN206076226U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115881696A (en) * | 2023-01-31 | 2023-03-31 | 广州粤芯半导体技术有限公司 | Test structure and test method for detecting metal bottom internal cutting defects |
| US11935797B2 (en) | 2021-03-29 | 2024-03-19 | Changxin Memory Technologies, Inc. | Test method, adjustment method, test system, and storage medium for alignment error |
-
2016
- 2016-09-29 CN CN201621094197.0U patent/CN206076226U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11935797B2 (en) | 2021-03-29 | 2024-03-19 | Changxin Memory Technologies, Inc. | Test method, adjustment method, test system, and storage medium for alignment error |
| CN115881696A (en) * | 2023-01-31 | 2023-03-31 | 广州粤芯半导体技术有限公司 | Test structure and test method for detecting metal bottom internal cutting defects |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170405 Termination date: 20190929 |
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| CF01 | Termination of patent right due to non-payment of annual fee |