CN203826347U - WAT test structure for monitoring over-etching of metal layer - Google Patents
WAT test structure for monitoring over-etching of metal layer Download PDFInfo
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- CN203826347U CN203826347U CN201420200649.3U CN201420200649U CN203826347U CN 203826347 U CN203826347 U CN 203826347U CN 201420200649 U CN201420200649 U CN 201420200649U CN 203826347 U CN203826347 U CN 203826347U
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Abstract
The utility model provides a WAT test structure for monitoring over-etching of a metal layer. The structure comprises a plurality of sub test structures. Each sub test structure includes a bottom metal layer and metal through holes arranged at two ends of the bottom metal layer, and the sub test structure is connected with the metal through holes of next sub test structure through a top metal layer on the top of the metal through holes, so that a chain-type WAT test structure is formed. The metal through hole partially overlaps the bottom metal layer. According to the utility model, through the design that the metal through hole partially overlaps the bottom metal layer, if the bottom metal layer is deformed due to over-etching, the metal through holes can easily break from the bottom layer, and the whole WAT test structure is short-circuited and gets into a state of high resistance, thus the over-etching of the bottom metal layer is detected.
Description
Technical field
The utility model relates to semiconductor test technical field, particularly relates to a kind of WAT test structure of monitoring metal level over etching.
Background technology
Along with technological progress, integrated circuit fabrication process requires day by day to increase, and because the integrated circuit manufacturing cycle is long, cost is high, and therefore, the manufacture efficiency and the quality that improve manufacturing process are particularly important.
Industry, in ic manufacturing process, is conventionally manufactured WAT structure at each integrated circuit (IC) chip periphery of wafer, then after manufacture completes, WAT structure is detected, so that corresponding manufacturing process is tested.If while WAT structure being carried out to all kinds of detections such as electrical detection after wafer manufacture completes, find that this WAT structure has short circuit, opens circuit or the failure conditions such as electric leakage, by to WAT structure inefficacy property analysis analyze lost efficacy occur reason, so that technique is adjusted accordingly and to be improved.
In transistor technology, need contact hole (contact) and (via) as the use of drawing of device, contact hole and through hole are the coupling parts between different layers, contact hole is between polysilicon or diffusion layer and metal, and through hole is between metal and metal.
Traditional WAT test structure as shown in Figure 1, this test structure can be used for testing the contact resistance of metal throuth hole, this structure is, at bottom metal layer 1A two ends, a metal throuth hole 2A is set respectively, then be connected with next unit with top layer metallic layer 3A, mode with link is connected, and surveys afterwards the mode of electric current by applying voltage at the two ends of series connection, obtains the resistance of total, and then by calculating, obtain the contact resistance of single metal through hole 2A.If Fig. 2 is that normal single metal through hole 2A is produced on the upper schematic diagram of bottom metal layer 1A.Be that over etching occurs bottom metal layer 1A as shown in Figure 3, cause the top pattern of bottom metal layer to damage, like this, metal throuth hole not only can be deposited on underlying metal surface, also can be deposited on the side of bottom metal layer.Because bottom metal layer and metal throuth hole are not opened a way, while utilizing this structure to test, still also can record electric current.Situation in Fig. 3, can make chip especially graphical sensory device chip lost efficacy.
Therefore, provide a kind of WAT test structure of monitoring metal level over etching to be necessary.
Utility model content
The shortcoming of prior art in view of the above, the purpose of this utility model is to provide a kind of WAT test structure of monitoring metal level over etching, cannot monitor for solving prior art WAT test structure the problem that over etching appears in metal level top.
For achieving the above object and other relevant objects, the utility model provides a kind of WAT test structure of monitoring metal level over etching, it is characterized in that, described test structure comprises multiple sub-test structures; Every sub-test structure comprises bottom metal layer and is arranged at the metal throuth hole on described bottom metal layer two ends; Described sub-test structure is connected with the metal throuth hole in next sub-test structure by the top layer metallic layer at metal throuth hole top, thereby forms the WAT test structure of chain type; Wherein, described metal throuth hole and bottom metal layer partly overlap.
The structure of monitoring a kind of optimization of the WAT test structure of metal level over etching as the utility model, the lateral dimension of described metal throuth hole and underlying metal ply is determined according to the design rule of process node; In the time that process node is 0.16 μ m, the lateral dimension of overlapping region is set to 0.009 μ m; In the time that process node is 0.13 μ m, the lateral dimension of overlapping region is set to 0.005 μ m.
Monitor the structure of a kind of optimization of the WAT test structure of metal level over etching as the utility model, in adjacent sub-test structure, position is relative in a lateral direction for two metal throuth holes that connect with same top layer metallic layer.
The structure of monitoring a kind of optimization of the WAT test structure of metal level over etching as the utility model, in adjacent sub-test structure, two metal throuth holes that are connected with same top layer metallic layer stagger position in a lateral direction.
The structure of monitoring a kind of optimization of the WAT test structure of metal level over etching as the utility model, described WAT test structure is arranged at scribe line area.
Monitor the structure of a kind of optimization of the WAT test structure of metal level over etching as the utility model, in described sub-test structure, the metal throuth hole of bottom metal layer one end is arranged on underlying metal completely, and metal throuth hole and the bottom metal layer of the other end partly overlap.
The structure of monitoring a kind of optimization of the WAT test structure of metal level over etching as the utility model, described top-level metallic layer material is tungsten, copper or aluminium.
The structure of monitoring a kind of optimization of the WAT test structure of metal level over etching as the utility model, described underlying metal layer material is tungsten, copper or aluminium.
As mentioned above, the WAT test structure of monitoring metal level over etching of the present utility model, comprising: multiple sub-test structures; Every sub-test structure comprises bottom metal layer and is arranged at the metal throuth hole on described bottom metal layer two ends; Described sub-test structure is connected with the metal throuth hole in next sub-test structure by the top layer metallic layer at metal throuth hole top, thereby forms the WAT test structure of chain type; Wherein, described metal throuth hole and bottom metal layer partly overlap.The utility model is set to partly overlap by metal throuth hole and bottom metal layer, when bottom metal layer is during due to over etching generation alteration of form, metal throuth hole and bottom metal layer disconnect, make the short circuit of whole WAT test structure, present high-impedance state, thereby monitor out bottom metal layer generation over etching.
Brief description of the drawings
Fig. 1 is WAT test structure schematic diagram of the prior art.
Fig. 2 is WAT test structure profile of the prior art.
Fig. 3 is the profile of WAT test structure generation over etching of the prior art.
Fig. 4 is the schematic diagram of the WAT test structure of the monitoring metal level over etching of the utility model embodiment mono-.
Fig. 5 a be in Fig. 4 WAT test structure along the profile of AA ' direction.
The generation over etching profile of the WAT test structure of Fig. 5 b monitoring metal level of the present utility model over etching.
The schematic diagram of the WAT test structure of the monitoring metal level over etching of Fig. 6 the utility model embodiment bis-.
The schematic diagram of the WAT test structure of the monitoring metal level over etching of Fig. 7 the utility model embodiment tri-.
Element numbers explanation
100 test structures
101 sub-test structures
1,1A bottom metal layer
2,2A, 21,22 metal throuth holes
3 top layer metallic layers
Embodiment
By particular specific embodiment, execution mode of the present utility model is described below, person skilled in the art scholar can understand other advantages of the present utility model and effect easily by the disclosed content of this specification.
Refer to Fig. 4 to Fig. 7.Notice, appended graphic the illustrated structure of this specification, ratio, size etc., all contents in order to coordinate specification to disclose only, understand and read for person skilled in the art scholar, not in order to limit the enforceable qualifications of the utility model, therefore the not technical essential meaning of tool, the adjustment of the modification of any structure, the change of proportionate relationship or size, do not affecting under effect that the utility model can produce and the object that can reach, all should still drop on the technology contents that the utility model discloses and obtain in the scope that can contain.Simultaneously, in this specification, quote as " on ", the term of D score, " left side ", " right side ", " centre " and " " etc., also only for ease of understanding of narrating, but not in order to limit the enforceable scope of the utility model, the change of its relativeness or adjustment, changing under technology contents, when being also considered as the enforceable category of the utility model without essence.
Embodiment mono-
As shown in Figure 4, the utility model provides a kind of WAT test structure 100 of monitoring metal level over etching, described WAT test structure 100: comprise multiple sub-test structures 101.
Every sub-test structure all comprises bottom metal layer 1 and is arranged at the metal throuth hole 21,22 on described bottom metal layer 1 two ends.
It should be noted that, metal throuth hole 2 described here refers to the through hole of filling full electric conducting material, is not hollow hole.
Wherein, described metal throuth hole 2 is not to be deposited on completely on bottom metal layer 1, but partly overlap with bottom metal layer 1,, via metal layer 2 part are deposited on bottom metal layer 1, and a part is deposited on the dielectric between bottom metal layer 1, as shown in Figure 5 a, described dielectric does not draw in the drawings, can prevent intermetallic electric leakage.
Between described sub-test structure 101, connect by top layer metallic layer 3, particularly, described sub-test structure 101 is to be connected with the metal throuth hole 2 in next sub-test structure by the top layer metallic layer 3 at metal throuth hole 2 tops, as shown in Figure 4.Adjacent sub-test structure connects one to one and forms the WAT test structure of chain type.
Further, the overlapping lateral dimension (being lateral contact size) of described metal throuth hole 2 and bottom metal layer 1 is determined according to the design rule of process node, for example, if process node is 0.16 μ m, the lateral dimension of overlapping region is set to 0.009 μ m, in making in technique, once the variation that the top layer shape of bottom metal layer 1 occurs, become trapezoidal or triangle, contact size between bottom metal layer 1 and metal throuth hole 2 can be greater than 0.009 μ m, now just think and open circuit between bottom metal layer 1 and metal throuth hole 2, as shown in Figure 5 b, when in the time that test structure two ends port applies voltage, the electric current recording is zero, whole test structure presents high-impedance state.And for example, when technology node is 0.13 μ m, the lateral overlap region arranging between bottom metal layer 1 and metal throuth hole 2 is of a size of 0.005 μ m.
The material of described top layer metallic layer 3 is tungsten, copper or aluminium.In the present embodiment, the material of described top layer metallic layer 3 is aluminium.
The material of described bottom metal layer 1 is tungsten, copper or aluminium.In the present embodiment, the material of described bottom metal layer 1 is tungsten.
The size of bottom metal layer 1 and density are adjusted according to the metal level in tested actual chips.In the present embodiment, the size of bottom metal layer 1 is less, and density is lower, and in adjacent sub-test structure 101, position is relative in a lateral direction for two metal throuth holes 21,22 that connect with same top layer metallic layer 3.As shown in Figure 3, metal throuth hole 21 and metal throuth hole 22 are in a lateral direction in same straight line.
Also it should be noted that, described WAT test structure 100 is arranged at the scribe line area of chip.The size of whole WAT test structure can be adjusted according to the size of scribe line area.
Embodiment bis-
The present embodiment provides a kind of WAT test structure of monitoring metal level over etching, as shown in Figure 6, and described WAT test structure: comprise multiple sub-test structures 101.
Every sub-test structure 101 comprises bottom metal layer 1 and is arranged at the metal throuth hole 21,22 on described bottom metal layer 1 two ends; Described sub-test structure is connected with the metal throuth hole 2 in next sub-test structure by the top layer metallic layer 3 at metal throuth hole 2 tops, thereby forms the WAT test structure of chain type; Wherein, described metal throuth hole 2 partly overlaps with bottom metal layer 1.
The WAT test structure of monitoring metal level over etching and the difference of embodiment mono-that the present embodiment provides be, the size of the bottom metal layer 1 in the present embodiment is larger, and density is higher.For two adjacent sub-test structures 101, two metal throuth holes 21,22 that are connected with same top layer metallic layer 3 position setting is in a lateral direction staggered, as shown in Figure 6.
Embodiment tri-
The WAT test structure of monitoring metal level over etching and the difference of embodiment bis-that the present embodiment provides are, sub-test structure in the present embodiment, the metal throuth hole 23 of bottom metal layer 1 one end is arranged on bottom metal layer 1 completely, metal throuth hole 22 and the bottom metal layer 1 of the other end partly overlap, as shown in Figure 7.
Therefore, the present embodiment provides a kind of WAT test structure of monitoring metal level over etching, as shown in Figure 7, and described WAT test structure: comprise multiple sub-test structures 101.
Every sub-test structure 101 comprises bottom metal layer 1, is arranged on described bottom metal layer 1 one end and with partly overlapping the first metal throuth hole 22 of bottom metal layer 1 and is arranged at the second metal throuth hole 23 on described bottom metal layer 1 completely; Described sub-test structure is connected with the metal throuth hole 2 in next sub-test structure by the top layer metallic layer 3 at metal throuth hole 2 tops, thereby forms the WAT test structure of chain type.
In sum, the WAT test structure of monitoring metal level over etching of the present utility model, comprising: multiple sub-test structures; Every sub-test structure comprises bottom metal layer and is arranged at the metal throuth hole on described bottom metal layer two ends; Described sub-test structure is connected with the metal throuth hole in next sub-test structure by the top layer metallic layer at metal throuth hole top, thereby forms the WAT test structure of chain type; Wherein, described metal throuth hole and bottom metal layer partly overlap.The utility model is set to partly overlap by metal throuth hole and bottom metal layer, when bottom metal layer is during due to over etching generation alteration of form, metal throuth hole and bottom metal layer disconnect, make the short circuit of whole WAT test structure, present high-impedance state, thereby monitor out bottom metal layer generation over etching.
So the utility model has effectively overcome various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present utility model and effect thereof only, but not for limiting the utility model.Any person skilled in the art scholar all can, under spirit of the present utility model and category, modify or change above-described embodiment.Therefore, have in technical field under such as and conventionally know that the knowledgeable modifies or changes not departing from all equivalences that complete under spirit that the utility model discloses and technological thought, must be contained by claim of the present utility model.
Claims (8)
1. a WAT test structure of monitoring metal level over etching, is characterized in that, described test structure comprises multiple sub-test structures; Every sub-test structure comprises bottom metal layer and is arranged at the metal throuth hole on described bottom metal layer two ends; Described sub-test structure is connected with the metal throuth hole in next sub-test structure by the top layer metallic layer at metal throuth hole top, thereby forms the WAT test structure of chain type; Wherein, described metal throuth hole and bottom metal layer partly overlap.
2. monitoring metal level according to claim 1 is crossed the WAT test structure of carving metal erosion, it is characterized in that: the lateral dimension of described metal throuth hole and underlying metal ply is determined according to the design rule of process node; In the time that process node is 0.16 μ m, the lateral dimension of overlapping region is set to 0.009 μ m; In the time that process node is 0.13 μ m, the lateral dimension of overlapping region is set to 0.005 μ m.
3. the WAT test structure of monitoring metal level over etching according to claim 1, is characterized in that: in adjacent sub-test structure, position is relative in a lateral direction for two metal throuth holes that connect with same top layer metallic layer.
4. the WAT test structure of monitoring metal level over etching according to claim 1, is characterized in that: in adjacent sub-test structure, two metal throuth holes that are connected with same top layer metallic layer stagger position in a lateral direction.
5. the WAT test structure of monitoring metal level over etching according to claim 1, is characterized in that: described WAT test structure is arranged at scribe line area.
6. the WAT test structure of monitoring metal level over etching according to claim 1, it is characterized in that: in described sub-test structure, the metal throuth hole of bottom metal layer one end is arranged on bottom metal layer completely, and metal throuth hole and the bottom metal layer of the other end partly overlap.
7. the WAT test structure of monitoring metal level over etching according to claim 1, is characterized in that: the material of described top layer metallic layer is tungsten, copper or aluminium.
8. the WAT test structure of monitoring metal level over etching according to claim 1, is characterized in that: the material of described bottom metal layer is tungsten, copper or aluminium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420200649.3U CN203826347U (en) | 2014-04-23 | 2014-04-23 | WAT test structure for monitoring over-etching of metal layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420200649.3U CN203826347U (en) | 2014-04-23 | 2014-04-23 | WAT test structure for monitoring over-etching of metal layer |
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| CN203826347U true CN203826347U (en) | 2014-09-10 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201420200649.3U Expired - Fee Related CN203826347U (en) | 2014-04-23 | 2014-04-23 | WAT test structure for monitoring over-etching of metal layer |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108962877A (en) * | 2017-05-26 | 2018-12-07 | 中芯国际集成电路制造(上海)有限公司 | Test structure and recess etch detection method |
| CN115881696A (en) * | 2023-01-31 | 2023-03-31 | 广州粤芯半导体技术有限公司 | Test structure and test method for detecting metal bottom internal cutting defects |
-
2014
- 2014-04-23 CN CN201420200649.3U patent/CN203826347U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108962877A (en) * | 2017-05-26 | 2018-12-07 | 中芯国际集成电路制造(上海)有限公司 | Test structure and recess etch detection method |
| CN115881696A (en) * | 2023-01-31 | 2023-03-31 | 广州粤芯半导体技术有限公司 | Test structure and test method for detecting metal bottom internal cutting defects |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140910 Termination date: 20190423 |
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| CF01 | Termination of patent right due to non-payment of annual fee |