CN206282852U - A kind of test structure - Google Patents
A kind of test structure Download PDFInfo
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- CN206282852U CN206282852U CN201621424683.4U CN201621424683U CN206282852U CN 206282852 U CN206282852 U CN 206282852U CN 201621424683 U CN201621424683 U CN 201621424683U CN 206282852 U CN206282852 U CN 206282852U
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Abstract
The utility model provides a kind of test structure, at least including active area, polysilicon layer, contact plunger and four test chains；Test chain includes the test cell of multiple series connection, test cell includes upper metal level, lower metal layer and the upper metal plug between metal level and lower metal layer of connection, the two ends of upper metal level are connected with the rear end of previous test cell lower metal layer and the front end of latter test cell lower metal layer respectively by metal plug, form chain structure；Two the lower metal layer of test chain is connected by contact plunger from the active area of different doping types respectively；One the lower metal layer of test chain is connected by contact plunger with polysilicon layer；And four head ends of test chain connect a testing weld pad respectively, tail end connects a testing weld pad jointly.This test structure can monitor the generation of the current effect in back segment interconnection process, detect the weak spot for existing；Save product yield analysis time；Have a wide range of application, be suitable to the technique of various technology nodes.
Description
Technical field
The utility model is related to technical field of manufacturing semiconductors, more particularly to a kind of test structure, for BEOL techniques
The monitoring of middle current effect.
Background technology
With developing rapidly for semiconductor technology, the characteristic size of semiconductor is less and less, semiconductor chip it is integrated close
Also more and more higher, but the new technology problem for producing are spent also therewith corresponding.
As shown in figure 1, in BEOL (Back End Of Line, back segment interconnection) manufacturing process, by fault pre-alarming point
Analysis (PFA, Predictive Failure Analysis) finds that metal level 1 ' occurs excalation, additionally, being connected to two gold medals
Metal plug 2 ' between category layer 1 ' also occurs that missing or the resistance value between metal plug 2 ' and metal level 1 ' are very big,
And in manufacturing process, it is impossible to above mentioned problem is detected by Defect Scanning or wafer acceptance test (WAT).Wherein, Fig. 2
It is metal level 1 ' in STEM (scanning transmission electron microscope) picture and the normal connection figure of metal plug 2 '.
Reason of searching to the bottom is that current effect causes the missing of metal, the weak spot be connected to by polysilicon and active area it
Between on the bulky capacitor that is formed, weak spot will charge (electric discharge imperfect) on a large scale after the etching, and the metal level that result in top exists
Current effect during fast-etching is clean.
Utility model content
The shortcoming of prior art in view of the above, the purpose of this utility model is to provide a kind of test structure, is used for
Solve the problems, such as BEOL process currents effect detection in the prior art.
To achieve the above object, the utility model provides a kind of test structure, for the electric current effect in back segment interconnection process
Should monitor, at least including active area, polysilicon layer, contact plunger and four test chains；The test chain includes multiple series connection
Test cell, the test cell at least includes upper metal level, lower metal layer and the connection upper metal level and the lower gold
Metal plug between category layer, wherein, the front end of the upper metal level is single with the previous test by the metal plug
The rear end of the lower metal layer of unit is connected, and the rear end of the upper metal level is by the metal plug and the latter test cell
Lower metal layer front end be connected, formed chain structure；In four test chains, there are two lower metals of the test chain
Layer is connected by the contact plunger from the active area of different doping types respectively；The lower metal layer for having a test chain leads to
The contact plunger is crossed to be connected with the polysilicon layer；And the head end of four test chains connects a testing weld pad, four respectively
The tail end that chain is tested described in bar connects a testing weld pad jointly.
In an implementation method of the present utility model, the size and number phase of the metal plug in four test chains
Together, size and number, the size and number all same of lower metal layer of the upper metal level in four test chains.
In an implementation method of the present utility model, the active area is that n-type doping or p-type are adulterated.
In an implementation method of the present utility model, also some dummy metal layers including being filled according to design rule.
In an implementation method of the present utility model, the front end of the upper metal level is inserted by one or two described metal
Plug is connected with the rear end of the lower metal layer of the previous test cell, and the rear end of the upper metal level passes through one or two institute
Metal plug is stated to be connected with the front end of the latter lower metal layer of the test cell.
In an implementation method of the present utility model, the test cell includes alternately laminated multiple described upper metal level
With multiple lower metal layers.
In an implementation method of the present utility model, the characteristic size of described test structure is not less than 40um × 100um.
In an implementation method of the present utility model, also including for isolate the polysilicon layer and the lower metal layer with
And isolate the interlayer dielectric layer of the lower metal layer and the upper metal level.
In an implementation method of the present utility model, the back segment interconnection process node include 65nm, 55nm, 40nm and
Any one in 28nm.
As described above, test structure of the present utility model, has the advantages that：
If the 1, there is current effect in back segment interconnection process, quickly and easily can be distinguished by WAT test results can
The basic reason of energy；
2nd, according to the combined test between different test chains, the weak spot of presence can be detected；
3rd, the analysis time of product yield is saved, detected that metal plug defect was asked before client inquires into test program
Topic；
4th, scope is widely applied, is suitable to the manufacturing process of all technology nodes.
Brief description of the drawings
Fig. 1 is metal level and the improper connection figure of metal plug in STEM pictures.
Fig. 2 is metal level and the normal connection figure of metal plug in STEM pictures.
Fig. 3 is the first test structure schematic diagram being made up of test chain in the utility model test structure.
Fig. 4 is the second test structure schematic diagram being made up of test chain in the utility model test structure.
Fig. 5 is the 3rd test structure schematic diagram being made up of test chain in the utility model test structure.
Fig. 6 is the 4th test structure schematic diagram being made up of test chain in the utility model test structure.
Fig. 7 is the overall structure diagram of the utility model test structure.
Component label instructions
1 ' metal level
2 ' metal plugs
1 active area
2 polysilicon layers
3 contact plungers
41 test cells
Metal level on 411
412 lower metal layers
413 metal plugs
5 testing weld pads
6 first test structures
7 second test structures
8 the 3rd test structures
9 the 4th test structures
Specific embodiment
Implementation method of the present utility model is illustrated by particular specific embodiment below, those skilled in the art can be by this
Content disclosed by specification understands other advantages of the present utility model and effect easily.
Refer to Fig. 3 to Fig. 7.It should be clear that structure, ratio, size depicted in this specification institute accompanying drawings etc., is only used to
Coordinate the content disclosed in specification, so that those skilled in the art understands and reads, be not limited to the utility model
Enforceable qualifications, therefore do not have technical essential meaning, the modification of any structure, the change of proportionate relationship or size
Adjustment, in the effect for not influenceing the utility model can be generated and under the purpose to be reached, all should still fall in the utility model
In the range of disclosed technology contents can be covered.Meanwhile, in this specification it is cited as " on ", D score, "left", "right",
The term of " centre " and " one " etc., is merely convenient to understanding for narration, and is not used to limit the enforceable scope of the utility model,
Its relativeness is altered or modified, under without essence change technology contents, when being also considered as the enforceable category of the utility model.
Fig. 3-Fig. 7 is referred to, the utility model provides a kind of test structure, for the current effect in back segment interconnection process
Monitoring, at least including active area 1, polysilicon layer 2, contact plunger 3 and four test chains；The test chain includes multiple series connection
Test cell 41, the test cell 41 at least includes upper metal level 411, lower metal layer 412 and connects the upper metal level
Metal plug 413 between 411 and the lower metal layer 412, wherein, the front end of the upper metal level 411 passes through the metal
Connector 413 is connected with the rear end of the lower metal layer 412 of the previous test cell 41, and the rear end of the upper metal level 411 leads to
Cross the metal plug 413 to be connected with the front end of the latter lower metal layer 412 of the test cell 41, form chain structure；
In four test chains, the lower metal layer 412 for having two test chains is mixed by the contact plunger 3 and difference respectively
The active area 1 of miscellany type is connected；The lower metal layer 412 for having a test chain passes through the contact plunger 3 and the polycrystalline
Silicon layer 2 is connected；And the head end of four test chains connects a testing weld pad 5 respectively, the tail end of four test chains is common
Connect a testing weld pad 5.
It should be noted that test structure of the present utility model can be divided into according to four test chains from the above
Four sub- test structures, describe for convenience, in one example, the test structure can be divided into the first test structure 6, second
Test structure 7, the 3rd test structure 8 and the 4th test structure 9, as shown in figures 3 to 6 respectively described first test structure, institute
State the schematic diagram of the second test structure, the 3rd test structure and the 4th test structure.
As shown in figure 3, first test structure is the test chain (not shown), the test chain includes multiple string
The test cell 41 of connection, the test cell 41 at least includes upper metal level 411, lower metal layer 412 and connects the upper gold
Metal plug 413 between category layer 411 and the lower metal layer 412, wherein, the front end of the upper metal level 411 is by described
Metal plug 413 is connected with the rear end of the lower metal layer 412 of the previous test cell 41, after the upper metal level 411
End is connected by the metal plug 413 with the front end of the latter lower metal layer 412 of the test cell 41, forms chain type knot
Structure.First test structure 6 is the test chain structure of standard, is not made any changes.
Fig. 4 show the second test structure schematic diagram being made up of test chain, and chain is tested in second test structure 7
Lower metal layer 412 is connected by the contact plunger 3 with active area 1, and the doping type of the active area 1 is n-type doping or p-type
Doping.
Fig. 5 show the 3rd test structure schematic diagram being made up of test chain, and chain is tested in the 3rd test structure 8
Lower metal layer 412 is connected by the contact plunger 3 with active area 1, and the doping type of the active area 1 is n-type doping or p-type
Doping.
It should be noted that although second test structure 7 and the 3rd test structure 8 are identical in structure,
It is the two doping type different, if that is, the active area 1 in second test structure 7 is n-type doping, described the
Active area 1 in three test structures 8 is p-type doping, if the active area 1 in second test structure 7 is p-type adulterated,
Active area 1 in 3rd test structure 8 is n-type doping.
Fig. 6 show the 4th test structure schematic diagram being made up of test chain, and chain is tested in the 4th test structure 9
Lower metal layer 412 is connected by the contact plunger 3 with the polysilicon layer 2, it should be noted that the polysilicon layer 2 with
The active area 1 tests the electricity big equivalent to that chain is connected in constituting a capacitance structure, namely the 4th test structure 9
Container.
The tail end of four test chains connects a testing weld pad 5 jointly.
First test structure 6, second test structure 7, the 3rd test structure 8 and the 4th test knot
One end of respective test chain connects a testing weld pad 5 respectively in structure 9, and the tail end of four test chains connects one jointly
Testing weld pad 5, constitutes the overall structure of the utility model test structure, specific as shown in Figure 7.
As an example, the size and number of the metal plug 413 in four test chains are identical, four test chains
In upper metal level 411 size and number, the size and number all same of lower metal layer 412.
Due to requiring the flatness of raising chip in some design rules, the reliability of yield rate is thus improved, so
System is some the dummy metal layers graphic structures for controlling critical dimension uniformity to fill automatically.
As an example, the front end of the upper metal level 411 passes through one or two described metal plug 413 and previous institute
The rear end for stating the lower metal layer 412 of test cell 41 is connected, and the rear end of the upper metal level 411 passes through one or two described gold
Category connector 413 is connected with the front end of the latter lower metal layer 412 of the test cell 41.Although a metal plug
413 can connect two metal levels, but two metal plugs 413 can more have safety guarantee, even if one of them described metal
Connector 413 is lacked or disconnected, and also can guarantee that the reliability of connection, and test structure of the present utility model can not only test single gold
Belong to the problem that the problem of connector 413 can also test multiple metal plugs 413.
As an example, under the test cell 41 includes that alternately laminated multiple described upper metal level 411 and multiple are described
Metal level 412.Namely illustrate that the test cell 41 can include not only two metal layers, and can be N layers, wherein N is big
In the natural number equal to 2, test structure of the present utility model can be tested in more metal layers between any two metal layers
Weak spot.
As an example, the characteristic size of described test structure is not less than 40um × 100um.
As an example, the test structure also include for isolate the polysilicon layer 2 and the lower metal layer 412 and
Isolate the interlayer dielectric layer (not shown) of the lower metal layer 412 and the upper metal level 411.
As an example, the back segment interconnection process node includes any one in 65nm, 55nm, 40nm and 28nm.Namely
Illustrate that the test structure has a wide range of application, be suitable to the manufacturing process of all technology nodes.
Test structure of the present utility model by test respectively first test structure 6, second test structure 7,
Resistance in 3rd test structure and the 4th test structure 9 judges whether current effect, if that is, actual
Resistance then judges that the metal interconnecting layer to be detected meets technological requirement in the range of the standard resistance, otherwise judges
The metal interconnecting layer to be detected does not meet technological requirement.Meanwhile, according to first test structure 6, second test
Any combination test of structure 7, the 3rd test structure 8 and the 4th test structure 9 is (weak to judge specific defect
Point) position.
In sum, test structure of the present utility model can monitor the generation of the current effect in back segment interconnection process,
And tested according to multiple combination, the weak spot of presence can be detected；The analysis time of product yield is saved, efficiency is improved；It is suitable
In the manufacturing process of all technology nodes, have wide range of applications.
Above-described embodiment only illustrative principle of the present utility model and its effect are new not for this practicality is limited
Type.Any person skilled in the art can all be carried out under without prejudice to spirit and scope of the present utility model to above-described embodiment
Modifications and changes.Therefore, such as those of ordinary skill in the art without departing from the essence disclosed in the utility model
All equivalent modifications completed under god and technological thought or change, should be covered by claim of the present utility model.
Claims (9)
1. a kind of test structure, monitors, it is characterised in that at least including active for the current effect in back segment interconnection process
Area, polysilicon layer, contact plunger and four test chains；
The test chain includes the test cells of multiple series connection, the test cell at least include upper metal level, lower metal layer with
And the metal plug between the connection upper metal level and the lower metal layer, wherein, the front end of the upper metal level passes through institute
State metal plug to be connected with the rear end of the lower metal layer of the previous test cell, the rear end of the upper metal level is by described
Metal plug is connected with the front end of the latter lower metal layer of the test cell, forms chain structure；
In four test chains, the lower metal layer for having two test chains is mixed by the contact plunger and difference respectively
The active area connection of miscellany type；The lower metal layer for having a test chain is connected by the contact plunger with the polysilicon layer
Connect；And the head end of four test chains connects a testing weld pad respectively, four tail ends of the test chain jointly survey by connection one
Test weld disk.
2. test structure according to claim 1, it is characterised in that the sizes of the metal plug in four test chains
It is identical with quantity, size and number, the size and number all same of lower metal layer of the upper metal level in four test chains.
3. test structure according to claim 1, it is characterised in that the active area is that n-type doping or p-type are adulterated.
4. test structure according to claim 1, it is characterised in that some virtual also including what is filled according to design rule
Metal level.
5. test structure according to claim 1, it is characterised in that the front end of the upper metal level passes through one or two
The metal plug is connected with the rear end of the lower metal layer of the previous test cell, and the rear end of the upper metal level passes through one
Individual or two metal plugs are connected with the front end of the latter lower metal layer of the test cell.
6. test structure according to claim 1, it is characterised in that the test cell includes alternately laminated multiple institutes
State metal level and multiple lower metal layers.
7. test structure according to claim 1, it is characterised in that the characteristic size of described test structure is not less than
40um×100um。
8. the test structure according to claim any one of 1-7, it is characterised in that also including for isolating the polysilicon
Layer is with the lower metal layer and isolates the interlayer dielectric layer of the lower metal layer and the upper metal level.
9. the test structure according to claim any one of 1-7, it is characterised in that the back segment interconnection process node includes
Any one in 65nm, 55nm, 40nm and 28nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621424683.4U CN206282852U (en) | 2016-12-22 | 2016-12-22 | A kind of test structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621424683.4U CN206282852U (en) | 2016-12-22 | 2016-12-22 | A kind of test structure |
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| Publication Number | Publication Date |
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| CN206282852U true CN206282852U (en) | 2017-06-27 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113130341A (en) * | 2021-03-15 | 2021-07-16 | 上海华力集成电路制造有限公司 | WAT test layout, test structure and forming method thereof |
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2016
- 2016-12-22 CN CN201621424683.4U patent/CN206282852U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113130341A (en) * | 2021-03-15 | 2021-07-16 | 上海华力集成电路制造有限公司 | WAT test layout, test structure and forming method thereof |
| CN113130341B (en) * | 2021-03-15 | 2024-01-19 | 上海华力集成电路制造有限公司 | WAT test layout, test structure and forming method thereof |
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