CN205985071U - Light emitting module and have headlight of this light emitting module - Google Patents

Abstract

The utility model discloses a light emitting module contains: a base plate, an at least semiconductor component, a stratum lucidum and a light conversion layer, wherein, semiconductor component sets up on this base plate, and this semiconductor component includes a top surface and a first side, and this semiconductor component mainly jets out a first light that has a first wavelength by this top surface, the stratum lucidum includes second side, light conversion layer, this light conversion layer include third side, and this light conversion layer absorbs the part to have this first light of this first wavelength and jet out a second light that has a second wavelength, and this light conversion layer is located between this semiconductor component and this stratum lucidum, wherein in fact for totally one plane to the side of this first side, this second and to the side of this third. The headlight that contains above -mentioned light emitting module is still disclosed. The utility model provides the luminous degree of consistency of light emitting module and the definition in illumination area territory have been risen.

Description

Light emitting module and the head lamp with this light emitting module

Technical field

This utility model is related to a kind of light emitting module and a kind of head lamp, more particularly, to a kind of luminous mould comprising clear layer Block and the head lamp with this light emitting module.

Background technology

Light emitting diode (Light Emitting Diode, LED) is a kind of electroluminescent cell, is mainly sowed by phosphatization (Gap), the semi-conducting material such as phosphorus zinc arsenide (GaAsP) is made.Have that power consumption is low due to light emitting diode, component life length, The advantages of response time short (fast response time) and small volume, thus high-power light emitting diode is by widely Apply in the illuminator such as automobiless and scialyscope projecting lamp.

In general, for the contrast improving illuminator, can be in LED wafer/crystal grain in encapsulation procedure (CHIP/DIE) around, setting has the reflecting layer of low light transmission to lift light collimation.However, this reflecting layer easily make adjacent Two light emitting diodes between formed dark space (Dark Zone), and make illuminator Luminescence Uniformity not good, simultaneously Reduce the definition of illumination region.

Utility model content

For above-mentioned deficiency, the purpose of this utility model is to provide a kind of light emitting module and has this light emitting module Head lamp, contributes to eliminating dark space between two neighboring light emitting diode to lift Luminescence Uniformity.

This utility model be employed technical scheme comprise that by reaching above-mentioned purpose：

A kind of light emitting module is it is characterised in that comprise：

One substrate；

At least semiconductor element, is arranged on this substrate, and this semiconductor element includes a top surface and one first side Face, and this semiconductor element mainly projects one first light with a first wave length by this top surface；

One clear layer, includes a second side；And

One light conversion layer, this light conversion layer includes one the 3rd side, and this light conversion layer absorption part has this This first light of first wave length and project and have one second light of a second wave length, this light conversion layer is located at this quasiconductor Between element and this clear layer, wherein this first side, this second side and the 3rd side are essentially totally one plane.

As further improvement of the utility model, the quantity of this at least semiconductor element is multiple, those quasiconductors Element is arranged on this substrate and adjacent two-by-two.

As further improvement of the utility model, this light conversion layer has multiple gaps, those semiconductor elements Side defines position and the shape in those gaps.

As further improvement of the utility model, the thickness of this clear layer is more than 0.2 centimetre and is less than or equal to 3.0 lis Rice.

As further improvement of the utility model, the thickness of this clear layer is less than or equal to 1.0 centimetres.

As further improvement of the utility model, the refractive index of this clear layer is more than or equal to 1 and is less than or equal to 3.

As further improvement of the utility model, also comprise one first reflecting layer, be arranged on this substrate, this is first anti- Penetrate layer to be located at by this first side.

As further improvement of the utility model, also comprise one second reflecting layer, this second reflecting layer is arranged at those Between two adjacent the 4th sides of semiconductor element.

As further improvement of the utility model, also comprise one first reflecting layer and one second reflecting layer, wherein this One reflecting layer is arranged on this substrate and is located at by this first side, and this second reflecting layer is arranged at those semiconductor element phases Between two adjacent the 4th sides, this second reflecting layer directly engages this light conversion layer, and this first reflecting layer directly engages This clear layer.

As further improvement of the utility model, also comprise one first reflecting layer and one second reflecting layer, wherein this One reflecting layer is arranged on this substrate and is located at by this first side, and this second reflecting layer is arranged at those semiconductor element phases Between two adjacent the 4th sides, this first reflecting layer and this second reflecting layer all comprise a body and multiple smooth reflective particle, Those light reflective particles are distributed in this in vivo, and the material of this body is light transmissive material, and the material of those light reflective particles Selected from one of titanium oxide, silicon oxide, boron nitride and combinations thereof group being formed.

As further improvement of the utility model, this at least one light conversion layer court prolongs with respect to this coplanar direction Stretch and protrude from this top surface of this semiconductor element.

A kind of head lamp comprising above-mentioned light emitting module.

The semiconductor element of light emitting module disclosed in the utility model, light conversion layer and clear layer are sequentially stacked in base On plate.Top surface by semiconductor element projects light, and the light emitted by semiconductor element is converted into ripple by light conversion layer The different another light of length.Wherein, the side of the side of semiconductor element, the side of clear layer and light conversion layer is substantially For totally one plane.

The beneficial effects of the utility model are：Light conversion layer is between semiconductor element and clear layer, and partly leads The side of the side of volume elements part, the side of clear layer and light conversion layer is essentially totally one plane.Thereby, when light is changed When the light of layer outgoing enters clear layer, clear layer contributes to for this light carrying out mixed light (Mixed Light), and can eliminate phase Dark space between two adjacent semiconductor elements, and then lift the Luminescence Uniformity of light emitting module and the clear of illumination region Degree.Additionally, clear layer also contributes to lifting the light collimation of light emitting module so that light emitting module is in addition to eliminating dark space, Also have effect of good light collimation concurrently simultaneously.

Above-mentioned be utility model technical scheme general introduction, below in conjunction with accompanying drawing and specific embodiment, to this utility model It is described further.

Brief description

Fig. 1 is the schematic perspective view of the light emitting module of this utility model first embodiment；

Fig. 2 is the cut-away illustration along cutting line A-A cutting for the light emitting module in Fig. 1；

Fig. 3 is the cut-away illustration of the light emitting module of this utility model second embodiment；

Fig. 4 is the cut-away illustration of the head lamp of this utility model 3rd embodiment.

Wherein, reference：

1 light emitting module

2 head lamps

3 housings

4 lampshades

10 substrates

20 semiconductor elements

210th, 430,620 top surface

220th, 230,510,610 side

30th, 40 reflecting layer

310th, 410 body

320th, 420 smooth reflective particle

430 top surfaces

50 light conversion layer

520 attaching faces

60 clear layers

Specific embodiment

Hereinafter detailed features of the present utility model and advantage are described in embodiments in detail, its content is any enough to make Those skilled in the art understands that technology contents of the present utility model are simultaneously implemented according to this, and according in disclosed in this specification Appearance, claims and accompanying drawing, any those skilled in the art can be readily understood upon the related mesh of this utility model And advantage.Below example further describe viewpoint of the present utility model, but non-anyways to limit this practicality New category.It is noted that herein when referring to that X is more than or less than N, unless otherwise noted, otherwise the numerical value of X does not wrap Containing N itself.

Referring to Fig. 1 and Fig. 2.Fig. 1 is the schematic perspective view of the light emitting module of this utility model first embodiment.Figure 2 is the cut-away illustration along cutting line A-A cutting for the light emitting module in Fig. 1.

The light emitting module 1 of the present embodiment comprises a substrate 10,20, two reflecting layer of multiple semiconductor element 30 and 40, Light conversion layer 50 and a clear layer 60.The quantity of semiconductor element 20 is not limited with multiple.In other embodiments, half The quantity of conductor element 20 can be single.

The material of substrate 10 is such as but not limited to ceramic material, only by be used in radiating or cost needs different Property, substrate 10 also by silicon, aluminum or other provided crystal chip bearing metal, nonmetallic material formed.

Semiconductor element 20 is such as but not limited to connect through Flip Chip (also known as brilliant package method, Flip Chip) A LED lighting chip (LED DIE) in substrate 10.These semiconductor elements 20 are all arranged on substrate 10 and two biphase Adjacent.Each semiconductor element 20 has a top surface 210 and two sides (lateral side), and semiconductor element 20 is main Project a light by top surface 210.That is, top surface 210 has larger amount of light.

As shown in Fig. 2 reflecting layer 30 be formed at substrate 10 surface and around and be formed with a space for semiconductor element Part 20, reflecting layer 30, reflecting layer 40, light conversion layer 50 and clear layer 60 are placed in wherein.Specifically, reflecting layer 30 is wrapped Containing a body 310 and multiple smooth reflective particle 320, and light reflective particle 320 is distributed in body 310.The basis in reflecting layer 30 Body 310 is arranged on substrate 10 and around these semiconductor elements 20.And in the middle of above-mentioned many semiconductor elements 20, have part Semiconductor element 20 is adjoining with reflecting layer 30, and the side in faced by these semiconductor elements 20 and contact reflecting layer 30 is determined Justice is side 220.The body 310 in reflecting layer 30 is arranged at side 220.These sides of any two adjacent semiconductor elements 20 220 neither face each other.Wherein, reflecting layer 30, except avoiding the side of light emitting module 1 to produce light leak, also helps make semiconductor element The light that part 20 produces projects towards the direction of top surface 210.

Reflecting layer 40 is arranged between two sides of two neighboring semiconductor element 20.Specifically, as shown in Fig. 2 instead Penetrate layer 40 and comprise a body 410 and multiple smooth reflective particle 420, and light reflective particle 420 is distributed in body 410.Partly lead The side 230 of volume elements part 20 is in the face of the side 230 of other adjacent semiconductor elements 20.And opposed facing two sides 230 Between there is a gap, reflecting layer 40 is located in the gap between facing two sides 230, and the body in reflecting layer 40 410 can be covered with this gap.With the present embodiment for for example, in the present embodiment, semiconductor element 20 is rectangle, therefore each half is led Volume elements part 20 at most has in the face of four sides 230 of adjacent multiple semiconductor elements 20, and wantonly two adjacent semiconductor elements Then it is provided with reflecting layer 40 between 20.Reflecting layer 40 contributes to making further light that semiconductor element 20 produces as much as possible towards anti- The top surface 430 penetrating layer 40 projects, to lift the light collimation of light emitting module 1.

Above-mentioned reflecting layer 30 is such as but not limited to light transmissive material with the material of the body 310 and 410 in reflecting layer 40, and The material of light reflective particle 320 and 420 is such as but not limited to selected from titanium oxide (TiO2), silicon oxide (SiO2), boron nitride And combinations thereof (BN) one of group being formed, so, reflecting layer 30 and reflecting layer 40 be between translucent and opaque it Between.

The material of light conversion layer 50 is such as but not limited to fluorescent material (Fluorescent Material) or phosphorescence Material (Phosphorescent Material).Light conversion layer 50 is arranged at the top surface 210 of these semiconductor elements 20, and And a top surface 430 of light conversion layer 50 directly engages light conversion layer 50 faced by reflecting layer 40.In other words, light conversion layer 50 top surfaces 210 that all semiconductor elements 20 are completely covered and the top surface 430 in reflecting layer 40.Light conversion layer 50 is suitable to absorb Part is derived from the light of semiconductor element 20 and projects another light, and the wavelength of the light projecting from light conversion layer 50 Different with the wavelength of the light projecting from semiconductor element 20.Furthermore, it is understood that the aforementioned light projecting from semiconductor element 20 Obtain and be in the interval wave band of visible light with respect to one, precisely because being not limited, this wavelength also obtains with respect to such as infrared ray or purple The interval wave band of the non-visible light such as outside line.For example, the semiconductor element 20 in the present embodiment outgoing can have blue light wavelength Light, and this light projects light (the dotted line arrow in as Fig. 2 with gold-tinted and blue light wavelength after light conversion layer 50 Shown in head) and it is mixed into white light.In addition, in the present embodiment, light conversion layer 50 is attached at semiconductor element 20 and not complete Entirely coat semiconductor element 20, that is, light conversion layer 50 does not cover side 220 and the side 230 of semiconductor element 20, and can subtract Few veiling glare produces.

The material of clear layer 60 is such as but not limited to glass, sapphire crystal glass (Sapphire Crystal Glass), silica gel or light-permeable ceramic material.Clear layer 60 is arranged at light conversion layer 50, and light conversion layer 50 is between partly Between conductor element 20 and clear layer 60.Reflecting layer 30 can around and directly engage clear layer 60.It should be noted that Yu Benshi Apply in example, in the case of can allowing certain fabrication error, the side 220 of semiconductor element 20, light conversion layer 50 are in the face of anti- It is common for penetrating the one side 510 of layer 30 and the one side 610 substantially (substantially) in reflecting layer 30 faced by clear layer 60 One plane (coplanar).Specifically, side 220, side 510 and side 610 are totally one vertical plane (vertical coplanar).Wherein, when the illumination of the sent wide-angle of semiconductor element 20 is incident upon the side 610 of clear layer 60, due to side Face 610 is vertical plane with the border in reflecting layer 30, therefore can project the light of this wide-angle towards the top surface 620 of clear layer 60, And increased the positive light of light emitting module 1, that is, improve collimation when light emitting module 1 lights.In addition, transmitted light exists Traveling in clear layer 60, clear layer 60 will form clear zone, thereby, can eliminate dark between two neighboring semiconductor element 20 Area.

In one embodiment, when the refractive index of clear layer 60 is more than or equal to 1 and is less than or equal to the thickness of 3 and clear layer 60 When more than 0.2 centimetre (millimeters), its collimating effect is preferable.And weigh the effect of light efficiency and collimation, aforementioned transparent layer 60 thickness suggestion is less than or equal to 3.0 centimetres.That is, the thickness of clear layer 60 advises being more than 0.2 centimetre and to be less than or equal to 3.0 centimetre.And it is preferred that the thickness suggestion of clear layer 60 is in more than 0.2 and is less than or equal to 1.0 centimetres.Thereby, clear layer 60 refractive index and thickness are more suitable, and can be in the light collimation carrying out mixed light and being lifted light emitting module 1 simultaneously.

In another embodiment, when clear layer 60 refractive index is more than or equal to 1 and less than or equal to 3, can avoid being incident to The light collimation that the refraction angle of the light of clear layer 60 is excessive and affects light emitting module 1.In addition, when clear layer 60 thickness is more than When 0.2 centimetre, clear layer 60 is provided that the light path of sufficient length makes emergent light carry out mixed light, can avoid because light mixing effect not good And lead to the problem eliminating dark space effect on driving birds is not good to occur.Furthermore, unirefringence can be produced simultaneously due to when light enters clear layer 60 And another unirefringence can be produced again during self-induced transparency layer 60 outgoing, therefore when clear layer 60 thickness is less than or equal to 3.0 centimetres, can avoid Travel path before being incident to clear layer 60 for the light and the travel path after outgoing clear layer 60 produce excessive horizontal offset, And then prevent clear layer 60 from excessively reducing the light collimation of light emitting module 1.When clear layer 60 thickness is less than or equal to 1.0 centimetres, Elimination dark space effect and light collimation can preferably be balanced.Therefore, the thickness through appropriately configured clear layer 60 and refractive index, energy Make light emitting module 1 in addition to eliminating dark space, also have effect of good light collimation simultaneously concurrently.

In another embodiment, clear layer 60 can have an anti-reflection structure back to the top surface 620 of semiconductor element 20 (Anti-reflective Structure), and help avoid emergent light and produce light reflection when by top surface 620 and lead to Energy loss.For example, anti-reflection structure can be multiple in regularly arranged micron order size conoid pole, it can produce gradually Variable refractivity (Graded Index), makes light can reduce light because variations in refractive index is more gentle when by top surface 620 Reflex.Thereby, contribute to lifting the light extraction efficiency of light emitting module 1.

Furthermore, in the present embodiment, the thickness of semiconductor element 20 can be 0.030～0.250 centimetre or be relatively LED crystal particle that should be in power for 1W.The thickness of light conversion layer 50 can be 0.030～0.30 centimetre, and reflects The summation of layer 30 thickness and substrate 10 thickness can be 0.30～1.50 centimetre.Thereby, light emitting module 1 of the present utility model is suitable for Being applied to automobiless and scialyscope projecting lamp etc. needs the illuminator of high illumination.

In sum, light conversion layer 50 is between semiconductor element 20 and clear layer 60, and side 220, side 510 and side 610 be essentially totally one plane.Thereby, clear layer 60 contributes to the light that will project from light conversion layer 50 Carry out mixed light, and the dark space between adjacent two semiconductor element 20 can be eliminated, and then lift the luminous uniform of light emitting module 1 Degree and the definition of illumination region.Additionally, clear layer 60 also contributes to lifting the light collimation of light emitting module 1 so that lighting Module 1, in addition to eliminating dark space, also has effect of good light collimation concurrently simultaneously.

In the first embodiment, light conversion layer covers the top surface of all semiconductor elements and partly leads positioned at two neighboring The top surface in the reflecting layer between volume elements part, but this utility model is not limited thereto.Refer to Fig. 3, be according to this utility model The cut-away illustration of the light emitting module of second embodiment.Because the present embodiment is similar to first embodiment, thus following only just different Place illustrates.

In the present embodiment, light emitting module 1 comprises multiple light conversion layer 50.These light conversion layer 50 are respectively arranged at The top surface 210 of these semiconductor elements 20.Between adjacent light conversion layer 50, there are multiple gaps, and these semiconductor elements 20 side (Side Edge) defines position and the shape in these gaps.For example, when semiconductor element is for rectangle, The four side of each semiconductor element is mutually perpendicular to, and the shape of each light conversion layer 50 is similarly rectangle, and light conversion Multiple gaps between layer 50 are equally arranged with rectangular mode.Thereby, multiple light conversion layer 50 correspond to multiple semiconductor elements 20 set-up mode contributes to reducing the dispersion angle of emergent light, and lifts the light collimation of light emitting module 1.Furthermore, it is understood that The light that semiconductor element 20 sends just can be converted into the different emergent light of wavelength in the region being configured with light conversion layer 50 Project light emitting module 1.For example, when the wavelength of light that semiconductor element 20 sends is non-visible light wave band and light conversion When wavelength of light can be converted to visible light wave range by layer 50, the configuration of this kind of light conversion layer 50 contributes to making visible light wave range Emergent light major part is all located at required illumination region, and makes light emitting module 1 have good light collimation.

Additionally, as shown in figure 3, light conversion layer 50 extends to inner side and protrudes from the top surface 210 of semiconductor element 20.? That is, the area that light conversion layer 50 is attached at an attaching face 520 of top surface 210 can be more than the area of top surface 210.Thereby, Contribute to the light making light conversion layer 50 receive the outgoing of more semiconductor element 20, and the luminous strong of light emitting module 1 can be lifted Degree.

Light emitting module in the various embodiments described above is suitable to be applied to head lamp.Refer to Fig. 4, be according to this utility model the 3rd The cut-away illustration of the head lamp of embodiment.

In the present embodiment, head lamp 2 comprises mentioned light emitting module 1 in any of the above-described embodiment.Additionally, head lamp 2 is also A housing 3 and a lampshade 4 can be comprised further.Light emitting module 1 is arranged in a storage tank of housing 3.Lampshade 4 is arranged at shell Body 3, and contribute to protecting light emitting module 1 to avoid being damaged by aqueous vapor or oil gas.

In sum, in light emitting module disclosed in the utility model and head lamp, light conversion layer is between semiconductor element Between part and clear layer, and the side of the side of semiconductor element, the side of light conversion layer and clear layer is essentially Totally one plane.Thereby, when the light that light conversion layer is launched enters clear layer, clear layer contributes to being mixed this light Light, and the dark space between adjacent two semiconductor element can be eliminated, and then lift Luminescence Uniformity and the photograph of light emitting module The definition in area pellucida domain.In addition, clear layer also contributes to lifting the light collimation of light emitting module so that light emitting module is except disappearing In addition to dark space, also have effect of good light collimation concurrently simultaneously.

Additionally, the thickness of clear layer is more than 0.2 centimetre and is less than or equal to 3.0 centimetres, and the refractive index of clear layer is big In equal to 1 and less than or equal to 3.Thereby, the refractive index of clear layer and thickness are more suitable, and can be lifted in carrying out mixed light simultaneously The light collimation of light emitting module, makes light emitting module in addition to eliminating dark space, also has effect of good light collimation concurrently simultaneously.

The above, be only preferred embodiment of the present utility model, not technical scope of the present utility model is made Any restriction, therefore using the technical characteristic identical or approximate with this utility model above-described embodiment, obtained from other luminous moulds Block and its head lamp, all within protection domain of the present utility model.

Claims (12)

1. a kind of light emitting module is it is characterised in that comprise：

One substrate；

At least semiconductor element, is arranged on this substrate, and this semiconductor element includes a top surface and a first side, and This semiconductor element mainly projects one first light with a first wave length by this top surface；

One clear layer, includes a second side；And

One light conversion layer, this light conversion layer includes one the 3rd side, this light conversion layer absorption part have this first This first light of wavelength and project and have one second light of a second wave length, this light conversion layer is located at this semiconductor element And this clear layer between, wherein this first side, this second side and the 3rd side are essentially totally one plane.

2. light emitting module as claimed in claim 1, should it is characterised in that the quantity of this at least semiconductor element is multiple A little semiconductor elements are arranged on this substrate and adjacent two-by-two.

3. it is characterised in that this light conversion layer has multiple gaps, those partly lead light emitting module as claimed in claim 2 The side of volume elements part defines position and the shape in those gaps.

4. light emitting module as claimed in claim 1 is it is characterised in that the thickness of this clear layer is more than 0.2 centimetre and is less than Equal to 3.0 centimetres.

5. light emitting module as claimed in claim 1 is it is characterised in that the thickness of this clear layer is less than or equal to 1.0 centimetres.

6. light emitting module as claimed in claim 1 is it is characterised in that the refractive index of this clear layer is more than or equal to 1 and is less than Equal to 3.

7. light emitting module as claimed in claim 1, it is characterised in that also comprising one first reflecting layer, is arranged on this substrate, This first reflecting layer is located at by this first side.

8. it is characterised in that also comprising one second reflecting layer, this second reflecting layer sets light emitting module as claimed in claim 2 It is placed between two adjacent the 4th sides of those semiconductor elements.

9. light emitting module as claimed in claim 1 is it is characterised in that also comprise one first reflecting layer and one second reflecting layer, Wherein this first reflecting layer is arranged on this substrate and is located at by this first side, and this second reflecting layer is arranged at those and partly leads Between two adjacent the 4th sides of volume elements part, this second reflecting layer directly engages this light conversion layer, and this first reflecting layer Directly engage this clear layer.

10. light emitting module as claimed in claim 1 is it is characterised in that also comprise one first reflecting layer and one second reflecting layer, Wherein this first reflecting layer is arranged on this substrate and is located at by this first side, and this second reflecting layer is arranged at those and partly leads Between two adjacent the 4th sides of volume elements part, this first reflecting layer and this second reflecting layer all comprise a body and multiple light is anti- Radion, those light reflective particles are distributed in this in vivo, and the material of this body is light transmissive material.

11. light emitting modules as claimed in claim 1 are it is characterised in that this at least one light conversion layer is put down altogether towards with respect to this The direction in face extends and protrudes from this top surface of this semiconductor element.

A kind of 12. head lamps comprising the arbitrary described light emitting module of claim 1 to 11.