CN107946433A - A kind of white light LEDs - Google Patents
A kind of white light LEDs Download PDFInfo
- Publication number
- CN107946433A CN107946433A CN201711101524.XA CN201711101524A CN107946433A CN 107946433 A CN107946433 A CN 107946433A CN 201711101524 A CN201711101524 A CN 201711101524A CN 107946433 A CN107946433 A CN 107946433A
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- quantum dot
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- white light
- light leds
- dot film
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- 239000002096 quantum dot Substances 0.000 claims abstract description 83
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical group [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 4
- 239000000463 material Substances 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract description 5
- 238000005265 energy consumption Methods 0.000 abstract description 3
- 238000009826 distribution Methods 0.000 description 9
- 230000006872 improvement Effects 0.000 description 9
- 230000004907 flux Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 238000005286 illumination Methods 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000011258 core-shell material Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000007493 shaping process Methods 0.000 description 3
- 230000005142 aphototropism Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000003760 hair shine Effects 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229910015808 BaTe Inorganic materials 0.000 description 1
- 229910004813 CaTe Inorganic materials 0.000 description 1
- -1 CdSe Chemical class 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910017680 MgTe Inorganic materials 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- 229910004411 SrTe Inorganic materials 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 230000009102 absorption Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 210000004556 brain Anatomy 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 208000012839 conversion disease Diseases 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
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- 229920002223 polystyrene Polymers 0.000 description 1
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- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The present invention provides a kind of white light LEDs, the white light LEDs include base, the blue chip being arranged on the base, cover on the first lens on the blue chip, the second lens on the base and at least two layers of quantum dot film between first lens and second lens, wherein, the quantum dot film includes red quantum dot film and green quantum dot film.The white light LEDs of the present invention increase the light emitting angle of LED component, improve quantum dot influence of lifetime because heated；White light LED color temperature uniformity is improved, improves color saturation, realizes the wide display effect of colour gamut；The quantity of the quanta point material used in white light LEDs can be effectively reduced, is effectively improved energy consumption, realizes straight-down negative quantum dot LED component to ultra-thin development；It is effectively improved quantum dot and shows cost.
Description
Technical field
The invention belongs to technical field of LED illumination, a kind of particularly white light LEDs for display backlight.
Background technology
LED (light emitting diode) is that one kind is based on semiconductor light emitting made of P-N junction electroluminescent principle
Device, has the advantages that light efficiency is high, service life is long, pollution-free, small, it has also become green lighting technique of future generation.With
Breakthrough using nitride as the third generation semiconductor material technology of representative, the semiconductor based on high power high brightness led
Lighting Industry is rapidly growing in the whole world, just as semi-conductor photoelectronic industry new growth engines, and in traditional lighting field
A revolution is triggered.LED gradually substitutes conventional light source, applied to every field, including back light unit, street lamp, car light etc..
The commercialization white light LEDs of mainstream currently on the market, be using coat on blue-light LED chip it is yellow, green, red a kind of or
A variety of fluorescent powders are realized.Existing fluorescent powder paint-on technique includes dotting glue method, shape-preserving coating method, away from cladding process, dispensing
Method is simple, of low cost thus be used widely due to its technique.Fluorescent powder conversion hysteria white light LEDs have technique simply into
Ripe, the features such as cost is relatively low, be the major product in current illumination market, but fluorescent conversion type white light LEDs still suffer from
The problem of many and challenge.
Quanta point material is the semiconductor crystal of nanoscale, has the spies such as Wavelength tunable, quantum yield height, excitation purity height
Point, has become important nano luminescent material, is hopeful to change the limitation of conventional fluorescent powder material selection, improves existing white light
The luminescent properties of LED.In recent years, nano-luminescent material receives significant attention, and gets the nod and answer in display lighting area
With.Utilization of the quantum dot in display backlight illumination at present, mainly using two ways, one kind is to be placed in quantum dot solution
In container, quantum dot is then illuminated into white light using side entering type LED light bar, in this way, quantum dot usage amount is very
Greatly, but quantum dot price is high, substantially increases manufacture cost, is unfavorable for marketing.Another way is to be prepared into
Quantum dot film.However, being primarily present, color saturation is low, the colour temperature uniformity is not high, luminous efficiency is low, fluorescent powder fever is serious
The problems such as, it is difficult to display backlight lighting area.
In order to solve the problems, such as the cost of quantum dot backlight and excitation purity, and the development of quantum dot back lighting is promoted,
It is necessary to provide a kind of new white light LEDs.
The content of the invention
In order to increase the light emitting angle of LED light, the color temperature uniformity of white light is improved, and solves quantum dot back lighting
The problem of cost and color saturation, realize downward back optical illumination ultrathin, described the present invention provides a kind of white light LEDs
White light LEDs include base, the blue chip being arranged on the base, cover on the first lens on the blue chip, installation
The second lens on the base and at least two layers of quantum dot film between first lens and second lens,
Wherein, the quantum dot film includes red quantum dot film and green quantum dot film.
As an improvement first lens are lens of ball crown type, and first lens include hemispherical
The inner surface and the outer surface.
As an improvement second lens are free-form surface lens, and second lens are including hemispheric
The outer surface of inner surface and free form surface.
As an improvement the inner surface and the outer surface of first lens and second lens is centrosymmetric,
And symmetry axis overlaps.
As an improvement second lens are arranged on the top of first lens, and first lens and
There are gap, the gap it is about 0.5-1mm between second lens.
As an improvement the red quantum dot film includes red quantum dot, the red quantum dot is CdSe@CdS
Colloidal Quantum Dots.
As an improvement the size of the red quantum dot is in the range of 10nm-20nm, the red quantum dot
Launch wavelength is less than 40nm in 600-640nm and halfwidth.
As an improvement the green quantum dot film includes green quantum dot, the green quantum dot is CdZnSeS
ZnS Colloidal Quantum Dots.
As an improvement the size of the green quantum dot is in the range of 10nm-20nm, the green quantum dot
Launch wavelength 520-540nm and halfwidth is less than 30nm.
As an improvement the light emitting angle of the white light LEDs is in the range of 140-150 °.
The beneficial effects of the invention are as follows：
The white light LEDs of the present invention increase the light emitting angle of LED component, improve quantum dot because heated and lifetime
Influence；White light LED color temperature uniformity is improved, improves color saturation, realizes the wide display effect of colour gamut；Can be effective
Reduce the quantity of quanta point material used in white light LEDs, be effectively improved energy consumption, realize straight-down negative quantum dot LED component to
Ultra-thin development；It is effectively improved quantum dot and shows cost.
Brief description of the drawings
Fig. 1 is the diagrammatic cross-section of the white light LEDs of the present invention.
Fig. 2 is the schematic diagram of the first lens of the present invention.
Fig. 3 is the schematic diagram of the second lens of the present invention.
Fig. 4 is blue chip distribution curve flux and passes through the distribution curve flux after two lens.
Fig. 5 is the spectrogram of the white light LEDs of the present invention.
Fig. 6 is the white light LEDs angle colour temperature figure of the present invention.
Fig. 7 is the chromaticity coordinates of white light LEDs and the schematic diagram of colour triangle of the present invention.
Embodiment
The embodiment of the present invention is described in further detail below in conjunction with Fig. 1 to Fig. 7.
Embodiment 1
As shown in Figure 1 to Figure 3, a kind of backlight module for straight-down negative LED of present invention offer can simultaneously improve color and satisfy
With the white light LEDs of degree, which includes base 7, the blue chip 5 being arranged on base, positioned at the two sides edge of base
Point stent 6, cover on the first lens 1 on blue chip 5, the second lens 2 on base 7 and in the first lens 1
And the second quantum dot film between lens 2.
Specifically, white light LEDs include the first lens 1, are arranged on the second lens 2 of the top of the first lens 1, wherein, the
One lens 1 are lens of ball crown type, and the first lens 1 have hemispheric the inner surface and the outer surface；Second lens 2 are freely bent
Face lens, the second lens 2 have the outer surface of hemispheric inner surface and free form surface, if the bottom surface of the second lens 2 is equipped with
Recessed bag is done, recessed bag is located at the peripheral part of bottom, and recess is for pyramid-shaped or other shapes and with optically focused and guide-lighting effect；The
The inner surface and the outer surface of one lens and the second lens is centrosymmetric, and symmetry axis overlaps；First lens 1 and second
There is the gap of about 0.5-1mm between lens 2, which is mixed light space, in the gap applied in two coats quantum dot film, tool
Body includes green quantum dot film 3 and red quantum dot film 4；Include the air gap between quantum dot film and blue chip 5；Lens
Material is, for example, polymethyl methacrylate (PMMA) or polystyrene (PC) etc., and light transmittance is high, compared to devices such as reflectors
Part light absorbs are small, light efficiency higher.The light emitting angle of the white light LEDs of said structure is in the range of 140-150 °.Due to green
Quantum dot can only absorb blue light without absorbing feux rouges, thus, it is possible to reduce because of situations such as color temperature shift caused by reabsorption.
Since, there are distance, institute produces quantum dot because blue chip 5 generates heat so as to reducing between quantum dot film and blue chip 5
Influence.In the present embodiment, red quantum dot is CdSe CdS (core shell) Colloidal Quantum Dots, and green quantum dot is
CdZnSeS@ZnS (core@shells) Colloidal Quantum Dots, but not limited to this, quantum dot can also be the semiconductor of II-VI elements composition
Compound such as CdSe, CdTe, MgS, MgSe, MgTe, CaS, CaSe, CaTe, SrS, SrSe, SrTe, BaS, BaSe, BaTe,
One or more combinations of ZnS, ZnSe, ZnTe and CdS or or iii-v element composition semiconducting compound such as
One or more combinations of GaN, GaP, GaAs, InN, InP and InAs, or the semiconductor transformation being made of II-VI group element
Several mixing in the semiconducting compound of compound and iii-v element composition.
A curves in Fig. 4 are the distribution curve flux of the blue chip of the present invention, which is lambertian.Pass through one
After secondary lens and secondary lens, shaping is carried out to the distribution curve flux of blue chip 5, the b in the distribution curve flux such as Fig. 4 after shaping is bent
It is side light-emitting mode shown in line, light emitting angle is 140 °, and the distribution curve flux after shaping can be formed in close luminous flat
The hot spot of uniform-illumination, it is thus possible to reduce the thickness of down straight aphototropism mode set.
Specifically, 5 launch wavelength of blue chip is less than the blue light of 25nm in 440nm to 460nm and halfwidth FWHM.Green
And the size of red quantum dot, between 10nm-20nm, the launch wavelength 520-540nm and halfwidth FWHM of green quantum dot are small
In 30nm, the launch wavelength of red quantum dot is less than 40m in 600-640nm and halfwidth FWHM.The blue light that blue chip 5 is launched
Fall in the absorption band of quantum dot, quantum dot film inspires green light or feux rouges after absorbing blue light, then and through quantum dot film
Blue light carry out being mixed to form quantum spot white light in mixed light space, the NTSC color gamut for realizing white light LEDs is at least 110%,
Colour temperature greatly improves color temperature uniformity between 5000-6000, so as to fulfill the display effect that color saturation is high, colour gamut is wide
Fruit, the spectrum of quantum spot white light LED are as shown in Figure 5.Because the luminosity of quantum dot also has much relations, temperature with its temperature
It is likely to result in ligand when rising to come off and cause the increase of quantum dot surface defect, therefore, it may occur that phenomena such as photobleaching.Adopt
With the method remotely coated, on the one hand quantum dot can be made to have a certain distance relative to blue chip 5, will not be because of blue light core
5 operation of piece generates heat and causes the change of quantum dot property；On the other hand, quantum dot can also be increased by the second lens
Heat dissipation, soon can distribute heat when heated.In addition, the size of quantum dot is smaller, its size is much smaller than visible ray
Wavelength, because without causing scattering, its light-emitting mode shines for isotropism, can be considered that what an isotropism shone shines
Face.In the present embodiment, the light that quantum dot film is sent can be reflected back by the light of some after lens due to being totally reflected
In mirror, the wide majority of this part can be reflected by the tapered recess of the second lens and pass through lens outgoing.Using this second
Lens can make distribution curve flux of the light that quantum dot is sent in space match with blue chip 5 by the distribution curve flux after lens,
Distribution of the colour temperature in space also can be very uniformly specific as shown in Figure 6.
In addition, the spectrum by calculating blue chip, green quantum dot film 3 and red quantum dot film 4, in the CIE colour spaces
Middle calculating chromaticity coordinates and colour triangle are as shown in Figure 7.The halfwidth FWHM of quantum dot is relatively narrow, similar to monochromatic light, by mixed
Color saturation higher after light, colour temperature is relatively low, therefore the white light LEDs of the present invention are more suitable for display field.
Compared with prior art, white light LEDs of the invention increase the light emitting angle of LED component, improve quantum dot because
It is heated and the influence of lifetime；White light LED color temperature uniformity is improved, improves color saturation, it is wide to realize colour gamut
Display effect；The quantity of the quanta point material used in white light LEDs can be effectively reduced, is effectively improved energy consumption, under realizing directly
Formula quantum dot LED component is to ultra-thin development；It is effectively improved quantum dot and shows cost.
The white light LEDs of the present invention are used for down straight aphototropism mode set, which provides the white-light illuminating back of the body for display device
Light, wherein display device are, for example, liquid crystal display device, Electronic Paper, mobile phone, tablet computer, television set, display, notebook electricity
Any product or component with display function such as brain, Digital Frame, navigator.
Above embodiment and embodiment are that the specific of white light LEDs proposed by the present invention is supported, it is impossible to are limited with this
Determine protection scope of the present invention, every according to technological thought proposed by the present invention, that is done on the basis of the technical program is any
Equivalent variations or equivalent change, still fall within the scope of technical solution of the present invention protection.
Claims (10)
- A kind of 1. white light LEDs, it is characterised in that the white light LEDs include base, be arranged on the base blue chip, Cover on the first lens on the blue chip, the second lens on the base and in first lens and institute At least two layers of quantum dot film between the second lens is stated, wherein, the quantum dot film includes red quantum dot film and green quantum Point film.
- 2. white light LEDs according to claim 1, it is characterised in that first lens are lens of ball crown type, and First lens include hemispheric the inner surface and the outer surface.
- 3. white light LEDs according to claim 1, it is characterised in that second lens are free-form surface lens, and institute Stating the second lens includes the outer surface of hemispheric inner surface and free form surface.
- 4. white light LEDs according to claim 1, it is characterised in that the interior table of first lens and second lens Face and outer surface are centrosymmetric, and symmetry axis overlaps.
- 5. white light LEDs according to claim 1, it is characterised in that second lens are arranged on first lens Top, and be about 0.5-1mm there are gap, the gap between first lens and second lens.
- 6. white light LEDs according to claim 1, it is characterised in that the red quantum dot film includes red quantum dot, institute It is CdSe@CdS Colloidal Quantum Dots to state red quantum dot.
- 7. white light LEDs according to claim 6, it is characterised in that the size of the red quantum dot is 10nm-20nm's In the range of, the launch wavelength of the red quantum dot is less than 40nm in 600-640nm and halfwidth.
- 8. white light LEDs according to claim 1, it is characterised in that the green quantum dot film includes green quantum dot, institute It is CdZnSeS ZnS Colloidal Quantum Dots to state green quantum dot.
- 9. white light LEDs according to claim 8, it is characterised in that the size of the green quantum dot is 10nm-20nm's In the range of, the launch wavelength 520-540nm and halfwidth of the green quantum dot are less than 30nm.
- 10. white light LEDs according to claim 1, it is characterised in that the light emitting angle of the white light LEDs is at 140-150 ° In the range of.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711101524.XA CN107946433A (en) | 2017-11-09 | 2017-11-09 | A kind of white light LEDs |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711101524.XA CN107946433A (en) | 2017-11-09 | 2017-11-09 | A kind of white light LEDs |
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| Publication Number | Publication Date |
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| CN107946433A true CN107946433A (en) | 2018-04-20 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110319368A (en) * | 2019-08-19 | 2019-10-11 | Tcl华瑞照明科技（惠州）有限公司 | LED light bar and backlight module |
| CN110501842A (en) * | 2018-05-18 | 2019-11-26 | 深圳Tcl新技术有限公司 | A kind of backlight module and display device |
| CN112083520A (en) * | 2020-09-26 | 2020-12-15 | 南通惟怡新材料科技有限公司 | Quantum dot lens, backlight module, display device and quantum dot lens manufacturing method |
| CN114777078A (en) * | 2022-04-19 | 2022-07-22 | 东莞雷笛克光学有限公司 | LED quantum dot lens |
| CN116841083A (en) * | 2023-07-06 | 2023-10-03 | 南通惟怡新材料科技有限公司 | High-color-gamut quantum dot lens and backlight module manufacturing method |
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| CN203784738U (en) * | 2013-09-30 | 2014-08-20 | 易美芯光（北京）科技有限公司 | Optical device capable of achieving high color gamut backlight |
| CN105856763A (en) * | 2016-02-25 | 2016-08-17 | 北京北达聚邦科技有限公司 | Quantum dot fluorescent film with double-monocolor-layer structure and manufacturing method thereof |
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| CN103542326A (en) * | 2013-09-30 | 2014-01-29 | 易美芯光（北京）科技有限公司 | Optical device capable of realizing high-color-gamut backlight |
| CN203784738U (en) * | 2013-09-30 | 2014-08-20 | 易美芯光（北京）科技有限公司 | Optical device capable of achieving high color gamut backlight |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110501842A (en) * | 2018-05-18 | 2019-11-26 | 深圳Tcl新技术有限公司 | A kind of backlight module and display device |
| CN110319368A (en) * | 2019-08-19 | 2019-10-11 | Tcl华瑞照明科技（惠州）有限公司 | LED light bar and backlight module |
| CN112083520A (en) * | 2020-09-26 | 2020-12-15 | 南通惟怡新材料科技有限公司 | Quantum dot lens, backlight module, display device and quantum dot lens manufacturing method |
| WO2022062938A1 (en) * | 2020-09-26 | 2022-03-31 | 南通惟怡新材料科技有限公司 | Quantum dot lens, backlight module, display device, and quantum dot lens manufacturing method |
| US11822098B2 (en) | 2020-09-26 | 2023-11-21 | Nantong Veeyee New Material Technology Co., Ltd | Quantum dot lens, backlight module, display device and manufacturing method of quantum dot lens |
| CN114777078A (en) * | 2022-04-19 | 2022-07-22 | 东莞雷笛克光学有限公司 | LED quantum dot lens |
| CN114777078B (en) * | 2022-04-19 | 2024-07-12 | 东莞雷笛克光学有限公司 | LED quantum dot lens |
| CN116841083A (en) * | 2023-07-06 | 2023-10-03 | 南通惟怡新材料科技有限公司 | High-color-gamut quantum dot lens and backlight module manufacturing method |
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Application publication date: 20180420 |