CN103187410A - Encapsulation structure of RGB (Red, Green and Blue) three-color LED (Light-Emitting Diode) - Google Patents
Encapsulation structure of RGB (Red, Green and Blue) three-color LED (Light-Emitting Diode) Download PDFInfo
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- CN103187410A CN103187410A CN2013100924819A CN201310092481A CN103187410A CN 103187410 A CN103187410 A CN 103187410A CN 2013100924819 A CN2013100924819 A CN 2013100924819A CN 201310092481 A CN201310092481 A CN 201310092481A CN 103187410 A CN103187410 A CN 103187410A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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Abstract
The invention discloses an encapsulation structure of an RGB (Red, Green and Blue) three-color LED (Light-Emitting Diode). The encapsulation structure disclosed by the invention comprises a heat sink aluminum substrate, an RGB three-color LED chip and a silicone lens, wherein the heat sink aluminum substrate is provided with a reflecting tank and an electrode plate; the RGB three-color LED chip is fixed on a bottom plane of the reflecting tank via solid crystal glue; a positive electrode and a negative electrode of the LED chip are connected to the electrode plate on the heat sink aluminum substrate via a gold wire; the silicone lens is covered above the reflecting tank and the RGB three-color LED chip; and a light outgoing side of the RGB three-color LED chip is inclined to the tank shape direction of the reflecting tank, so that the RGB three-color LED chip is integrally encapsulated. The LED encapsulated by the encapsulation structure disclosed by the invention has the advantages of being capable of randomly adjusting color temperature according to the requirements, emitting light by a large angle on a directing plane, being high in optical coupling efficiency and high in uniformity of light intensity distribution.
Description
Technical field
The present invention relates to a kind of LED encapsulating structure technology, be specifically related to a kind of encapsulating structure of RGB three-color LED.
Background technology
It is little that LED has a volume, low-voltage direct, and environmental protection, the life-span is long, and the color rendering advantages of higher has wide wide application prospect at lighting field.In recent years, LED solid state lamp illumination correlation technique has obtained fast development, planar lamp particularly, because light-emitting area is big, light is soft, does not have dazzling dazzle, is replacing incandescent lamp in the application of room lighting rapidly.Flat lamp needs the side led module as light source, and light is sent by LED, is coupled into the light guide plate of flat lamp, thereby is realized large-area plate lighting by diffuse reflection equably then.Face plate illumination does not injure eyes, belongs to healthy illumination, is room lighting important development direction therefore.
At present, the LED module of flat lamp side incident generally is to adopt single blue-light LED chip, is coated with in the above with certain thickness yellow fluorescent powder, the gold-tinted that sends from fluorescent material adds the blue light that transmits and gets needed white light that colour temperature depends on the ratio of gold-tinted and blue light.Obviously, in case LED packaged after, colour temperature just has been fixed up, and again can't change, the situation of this color temperature constant is the same with ordinary incandescent lamp.And panel is under large-size, because the led light source outgoing beam is circular symmetry, the luminescent panel that needs coupling to enter is the flat board of a two dimension, even strengthen the density of side LED, the uniformity of luminance of large-sized panel and luminosity still are difficult to satisfactory.
Clearly, no matter be that panel and light distribution problem are afterwards advanced in colour temperature problem or optical coupling, be the encapsulation problem of LED after all.Traditional power-type LED encapsulating structure as shown in Figure 1.It comprises heat sink aluminium base 1, crystal-bonding adhesive 2, fluorescent material 3, chip 4, spun gold 5, lens 6, electrode 7.Heat sink aluminium base 1 usefulness channeling mode is made bowl-shape reflector; coating crystal-bonding adhesive 2 at LED luminescence chip 4 is attached in the bowl-shape reflector; chip is burn-on behind the spun gold 5; smear fluorescent material in the above; making can the outgoing white light; be that encapsulating becomes lens 6 at last, the effect of the light emission rate of the existing raising of lens LED has the effect of the inner chip of protection again.
The LED encapsulating products of this class, colour temperature is constant, can not adjust in the course of work; Emergent ray is positive symmetrical wide-angle outgoing, and for the light fixture that needs light guide plate, coupling efficiency is low, obtains forward center light intensity height easily, and along with angle deviating and distance increase, light intensity will reduce rapidly then.Light distribution is inhomogeneous to be one of difficult point of this type light fixture of development, also directly has influence on popularization and the application of large-sized panel light fixture.
Summary of the invention
This purpose is to overcome the shortcoming and deficiency that exists in the existing LED encapsulation technology, and a kind of encapsulating structure of RGB three-color LED is provided, and this encapsulating structure is packaged into one to RGB three-color LED chip.
Purpose of the present invention is achieved through the following technical solutions: a kind of encapsulating structure of RGB three-color LED comprises heat sink aluminium base, RGB three-color LED chip and silica-gel lens; Described heat sink aluminium base is provided with reflection groove and electrode slice, and described RGB three-color LED chip is fixed on by crystal-bonding adhesive on the baseplane of reflection groove, and the positive and negative electrode of led chip is connected with electrode slice on the heat sink aluminium base by gold thread; Described silica-gel lens is overlying on reflection groove and RGB three-color LED chip top; The bright dipping of described RGB three-color LED chip is laterally inclined in the flute profile direction of reflection groove.
Preferably, described reflection groove has along two of the flute profile direction parabola shaped medial surfaces, and described RGB three-color LED chip is located on this parabola shaped focus.
Preferably, described RGB three-color LED chip, the bottom surface diagonal of each led chip is positioned on the halfline of reflection groove baseplane.
Preferably, the angle between the flute profile direction of the bright dipping side of described RGB three-color LED chip and reflection groove is 45 degree.
Preferably, described RGB three-color LED chip, each led chip is equidistantly arranged along the flute profile direction of reflection groove.
Preferably, described RGB three-color LED chip, independent control between each led chip.
RGB three-color LED chip is packaged into one makes the light intensity of RGB three looks can control respectively in a LED lamp pearl, and redgreenblue light intensity ratio can arbitrarily be adjusted on a large scale, that is to say that the colour temperature of LED lamp pearl can arbitrarily be adjusted as required.
Compared with prior art, the present invention has the following advantages and beneficial effect:
(1) the present invention obtains white light by adopting RGB three-color LED chip to be packaged in one, does not use fluorescent material, overcomes fluorescent material and uses wavelength shift for a long time, problems such as luminous efficiency reduction.The RGB three coloured light lines that led chip sends do not have this link of Wavelength conversion, directly mix obtaining white light, and light energy does not have extra loss, be fully utilized, and steady in a long-term.
(2) LED brightness colour temperature of the present invention can interiorly on a large scale as required arbitrarily be adjusted.
(3) package dimension of the present invention utilizes fluorescence method to realize that the package dimension of white light emission is identical with singulated dies, and inside of the present invention is packaged with three tube cores, and therefore LED brightness of the present invention is higher than the brightness of existing singulated dies common phosphors LED far away.
(4) the present invention to having added control structure, is conducive to light guide plate light intensity equally distributed planar light to being unfavorable for the light perpendicular to the wide-angle direction of plate face of the even light distribution of light guide plate, changing into to the light of LED emission.
Description of drawings
Fig. 1 is the White-light LED package structure schematic diagram of band fluorescent material in the prior art.
Fig. 2 puts the vertical view of signal for led chip of the present invention in the reflection groove base plane.
Fig. 3 puts the profile of signal for led chip of the present invention at the parabola shaped reflecting curved surface of side direction.
The perspective view that Fig. 4 puts with miter angle for led chip of the present invention.
Fig. 5 is the transverse cross-sectional view of LED encapsulating structure of the present invention.
Fig. 6 is the longitudinal sectional drawing of LED encapsulating structure of the present invention.
Embodiment
The present invention is described in further detail below in conjunction with embodiment and accompanying drawing, but embodiments of the present invention are not limited thereto.
As shown in Figure 2, be the structure of a kind of RGB three-color LED of present embodiment chip encapsulation one, the vertical view of led chip disposing way.Wherein, the 8th, the base plane of heat sink aluminium base reflection groove, the 11st, red LED chip, the 10th, green light LED chip, the 9th, blue-light LED chip, i.e. RGB three-color LED chip.
Chip can select for use heat radiation to require the chip of less relatively undersized backlight, can be 10 * 23mil(mil as size), the diagonal of chip overlaps in the rectangular plane halfline of putting, 2 nearest between chip distances are more than or equal to 11mil, make the light beam of the long side surface emission that chip is smooth not be subjected near stopping of chip; Have irregular surface texture as the fruit chip long side surface, have the more emergent ray of wide-angle, also because be that wide-angle incides another chip surface and produces high reflection, energy will lose plunders the surface and mistake rarely.
Put chip according to top scheme, and fixing the chip oven dry with crystal-bonding adhesive.For the light of front table emission, because chip has generally all adopted the ITO mask, technical finesses such as surface particlesization, the angular dimension of outgoing beam is basic identical, can reach 120 degree.Three LEDs inter-chip pitch are very little, and the open angle of light beam is basic identical again, so three coloured light lines of upper surface outgoing mix very fully, are coupled to after the light guide plate further mixing and disperse illumination again, and the effect of the synthetic white of RGB three color contaminations is good.
As shown in Figure 3, be fixed on horizontal section on the base plane of heat sink aluminium base reflection groove for led chip.Wherein, 12 is heat sink aluminium base, 13 is led chip, the 14th, be the parabola of focus with led chip center on this drawing in side sectional elevation, with doing the led chip side-emitted is come out perpendicular to the light of LED lamp pearl long side face, the light that namely is parallel to this cross section direction is reflected into direction straight up, and reflective surface has carried out polishing makes more effective control height reflect.
Being lower than 0 degree or greater than the light of following half light cone of 180 degree, will being come on the reflective bottom land plane reflection for chip sides emission; Light for the top, baseplane that is parallel to LED lamp pearl long side face will not impose any restrictions, and light will be with lens curved surface vertical or the silica gel encapsulation that near normal is passed through, and energy is farthest launched.
Fig. 4 is the structural representation that led chip of the present invention is put the miter angle solid.Wherein, 15 for being used as heat sink and reflective heat sink aluminium base, and 16 is the led chip that tilts to put, and 17 are the high reflecting surface through polishing.Wherein the reflecting surface structure height is about 0.5mm, and following heat sink aluminium flake thickness is 0.3mm.Whole aluminum structure length is about 3mm, and width is about 1.4mm, highly is about 0.8mm,
Fig. 5 is the transverse cross-sectional view of LED encapsulating structure of the present invention, wherein, the 18th, heat sink aluminium base, the 19th, led chip, the 20th, the parabolic type reflecting surface of side, the 21st, spun gold, the 22nd, electrode, the 23rd, the silica gel of embedding LED.
With fixing glue fixed L ED chip on the reflection groove baseplane, the electrode spun gold of burn-oning, and be connected to electrode slice on the heat sink aluminium base.Embedding silica gel in reflection groove, protection chip and internal structure, the light emission rate of raising LED.
Fig. 6 is LED longitudinal profile structural representation of the present invention, wherein, the 24th, heat sink aluminium base, the 25th, electrode, the 26th, silica-gel lens.
RGB three looks are just mixed in lamp bead seal assembling structure fully, outgoing again behind the transmission curved surface directly over the mixing light process or the reflecting curved surface of side.For chip upper surface, led chip has generally all adopted the ITO mask, technical finesses such as surface particlesization, and outgoing beam big or small basic identical can reach 120 degree.Three LEDs inter-chip pitch are very little, and the open angle of light beam is basic identical again, so three coloured light lines of upper surface outgoing mix very fully; For the side of chip, beam size also is 120 degree approximately.Because sides of chip and the heat sink reflection groove of aluminium flake have an inclination angle, the light beam of emission can be divided into vertical component and plane, component for reflection groove, and the vertical component of light reflects the parabola shaped reflecting curved surface of the groove side that is reflected and becomes straight up; The plane, component of light does not change original shooting angle after the reflection.For the light beam of side emission, below the plane, partly restraint light, just be lower than 0 degree or greater than 180 degree have 60 degree subtended angles approximately partly restraint the light vertebra, light will be reflected up by the baseplane.Therefore, the emission of lamp pearl is 0-180 degree RGB three looks mixed uniformly directrix plane light.
Above-mentioned for the specific implementation process of RGB three-color LED encapsulating structure of the present invention, but embodiments of the present invention are not subjected to the restriction of described enforcement, put order as led chip, it can be green glow, blue light, red light chips that left-to-right chip is arranged, and also can be three color chips other orders arbitrarily; Die size also can be other sizes; Electrode connects the position and also can adjust on the short side direction of LED.
Other any do not deviate from change, the modification done under spiritual essence of the present invention and the principle, substitutes, combination, simplify, and all should be the substitute mode of equivalence, is included within protection scope of the present invention.
Claims (6)
1. the encapsulating structure of a RGB three-color LED is characterized in that, comprises heat sink aluminium base, RGB three-color LED chip and silica-gel lens; Described heat sink aluminium base is provided with reflection groove and electrode slice, and described RGB three-color LED chip is fixed on by crystal-bonding adhesive on the baseplane of reflection groove, and the positive and negative electrode of led chip is connected with electrode slice on the heat sink aluminium base by gold thread; Described silica-gel lens is overlying on reflection groove and RGB three-color LED chip top; The bright dipping of described RGB three-color LED chip is laterally inclined in the flute profile direction of reflection groove.
2. the encapsulating structure of RGB three-color LED according to claim 1 is characterized in that, described reflection groove has along two of the flute profile direction parabola shaped medial surfaces, and described RGB three-color LED chip is located on this parabola shaped focus.
3. the encapsulating structure of RGB three-color LED according to claim 1 is characterized in that, described RGB three-color LED chip, and the bottom surface diagonal of each led chip is positioned on the halfline of reflection groove baseplane.
4. the encapsulating structure of RGB three-color LED according to claim 1 is characterized in that, the angle between the bright dipping side of described RGB three-color LED chip and the flute profile direction of reflection groove is 45 degree.
5. the encapsulating structure of RGB three-color LED according to claim 1 is characterized in that, described RGB three-color LED chip, and each led chip is equidistantly arranged along the flute profile direction of reflection groove.
6. the encapsulating structure of RGB three-color LED according to claim 1 is characterized in that, described RGB three-color LED chip, independent control between each led chip.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013100924819A CN103187410A (en) | 2013-03-21 | 2013-03-21 | Encapsulation structure of RGB (Red, Green and Blue) three-color LED (Light-Emitting Diode) |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013100924819A CN103187410A (en) | 2013-03-21 | 2013-03-21 | Encapsulation structure of RGB (Red, Green and Blue) three-color LED (Light-Emitting Diode) |
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| CN103187410A true CN103187410A (en) | 2013-07-03 |
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| CN2013100924819A Pending CN103187410A (en) | 2013-03-21 | 2013-03-21 | Encapsulation structure of RGB (Red, Green and Blue) three-color LED (Light-Emitting Diode) |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104534337A (en) * | 2015-01-09 | 2015-04-22 | 华南理工大学 | LED panel lamp based on RGB chips and manufacturing method thereof |
| CN107833964A (en) * | 2017-11-21 | 2018-03-23 | 苏州市悠文电子有限公司 | A kind of yellowish-white multicolored light-emitting component of RGB |
| WO2018132962A1 (en) * | 2017-01-18 | 2018-07-26 | Cree Huizhou Solid State Lighting Company Ltd. | Multiple led light source lens design in an integrated package |
| US11094852B2 (en) | 2017-08-25 | 2021-08-17 | Cree Huizhou Solid State Lighting Company Limited | Multiple LED light source lens design in an integrated package |
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| US20060239006A1 (en) * | 2004-04-23 | 2006-10-26 | Chaves Julio C | Optical manifold for light-emitting diodes |
| CN201053637Y (en) * | 2007-06-26 | 2008-04-30 | 宁波升谱光电半导体有限公司 | RGB white light LED device for illumination |
| CN201689914U (en) * | 2010-06-04 | 2010-12-29 | 北京吉乐电子集团有限公司 | Light emitting diode (LED) with surface mount plastic leaded chip carrier (PLCC) structure |
| CN201741714U (en) * | 2010-01-07 | 2011-02-09 | 光宝科技股份有限公司 | Chip encapsulating structure |
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2013
- 2013-03-21 CN CN2013100924819A patent/CN103187410A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060239006A1 (en) * | 2004-04-23 | 2006-10-26 | Chaves Julio C | Optical manifold for light-emitting diodes |
| CN201053637Y (en) * | 2007-06-26 | 2008-04-30 | 宁波升谱光电半导体有限公司 | RGB white light LED device for illumination |
| CN201741714U (en) * | 2010-01-07 | 2011-02-09 | 光宝科技股份有限公司 | Chip encapsulating structure |
| CN201689914U (en) * | 2010-06-04 | 2010-12-29 | 北京吉乐电子集团有限公司 | Light emitting diode (LED) with surface mount plastic leaded chip carrier (PLCC) structure |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104534337A (en) * | 2015-01-09 | 2015-04-22 | 华南理工大学 | LED panel lamp based on RGB chips and manufacturing method thereof |
| WO2018132962A1 (en) * | 2017-01-18 | 2018-07-26 | Cree Huizhou Solid State Lighting Company Ltd. | Multiple led light source lens design in an integrated package |
| US11094852B2 (en) | 2017-08-25 | 2021-08-17 | Cree Huizhou Solid State Lighting Company Limited | Multiple LED light source lens design in an integrated package |
| CN107833964A (en) * | 2017-11-21 | 2018-03-23 | 苏州市悠文电子有限公司 | A kind of yellowish-white multicolored light-emitting component of RGB |
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Application publication date: 20130703 |