CN205979193U - Light emitting module and have headlight of this light emitting module - Google Patents

Abstract

The utility model discloses a light emitting module contains: a base plate, a plurality of semiconductor component, a light conversion layer and a first stratum lucidum, wherein, a plurality of semiconductor component set up on this base plate, and these a little semiconductor component have a first top surface and at least one first side respectively, and this semiconductor component mainly sees through this first top surface and jets out the light that has a first wavelength, this light conversion layer is suitable for the absorption part to have the light of this first wavelength and jet out the light that has a second wavelength, this first stratum lucidum does not have the light reflex particle, and this first stratum lucidum sets up on this base plate, and this first stratum lucidum is covered with the clearance in between two adjacent these first sides of two wantonly these adjacent a little semiconductor component. A headlight that contains above -mentioned light emitting module is still disclosed. The utility model discloses the dark space between two adjacent emitting diode helps eliminating to promote the luminous degree of consistency.

Description

Light emitting module and the head lamp with this light emitting module

Technical field

The utility model is related to a kind of light emitting module and head lamp, more particularly, to a kind of light emitting module comprising hyaline layer with And there is the head lamp of this light emitting module.

Background technology

Light emitting diode (Light Emitting Diode, LED) is a kind of electroluminescent cell, is mainly sowed by phosphatization (Gap), the semi-conducting material such as phosphorus zinc arsenide (GaAsP) is made.Have that power consumption is low due to light emitting diode, component life length, The advantages of reaction time short (fast response time) and small volume, thus high-power light emitting diode is by widely Apply in the lighting device such as auto bulb and projector's projection lamp.

In general, for the contrast improving lighting device, can be in LED wafer/crystal grain in encapsulation procedure (CHIP/DIE) around, setting has the reflecting layer of low light transmission to lift light collimation.However, this reflecting layer easily make adjacent Two light emitting diodes between formed dark space (Dark Zone), and make lighting device Luminescence Uniformity not good, simultaneously Reduce the definition of illumination region (or lighting object).

Utility model content

For above-mentioned deficiency, the purpose of this utility model is to provide a kind of light emitting module and has this light emitting module Head lamp, contributes to eliminating the dark space between two neighboring light emitting diode, to lift Luminescence Uniformity.

The utility model be employed technical scheme comprise that by reaching above-mentioned purpose：

A kind of light emitting module is it is characterised in that comprise：

One substrate；

Multiple semiconductor elements, are arranged on this substrate, and those semiconductor elements are respectively provided with one first top surface and at least One first side, this semiconductor element mainly projects the light with a first wave length through this first top surface；

One light conversion layer, be suitable to absorption part have this first wave length light and project there is a second wave length Light；And

One first hyaline layer, does not have light reflective particle, and this first hyaline layer is arranged on this substrate, and this is first transparent Layer is covered with the gap between this first side two neighboring of any two those adjacent semiconductor elements.

As further improvement of the utility model, also comprise a reflecting layer, wherein this reflecting layer is arranged on this substrate, And this reflecting layer is located in those semiconductor elements mutually near a non-conterminous second side.

As further improvement of the utility model, this reflecting layer around those semiconductor elements, this first hyaline layer and This light conversion layer.

As further improvement of the utility model, also comprise one second hyaline layer, wherein this second hyaline layer is arranged at On this substrate, and this second hyaline layer is covered with the gap between this reflecting layer and this semiconductor element adjacent.

As further improvement of the utility model, this first hyaline layer and this second hyaline layer all directly engage this light Conversion layer.

As further improvement of the utility model, those first top surfaces of those semiconductor elements, this first hyaline layer One second top surface and this second hyaline layer one the 3rd top surface totally one horizontal plane.

A kind of head lamp comprising above-mentioned light emitting module.

The beneficial effects of the utility model are：Hyaline layer is arranged on substrate, and hyaline layer be covered with adjacent in any two Gap between the two neighboring side of these semiconductor elements.It is that the reflecting layer of low light transmission is set different from Conventional luminescent module It is placed between adjacent two semiconductor element, the hyaline layer of high-transmittance is arranged simultaneously by light emitting module disclosed in the utility model It is covered with the gap between two neighboring semiconductor element.Thereby, when light is incident to hyaline layer, hyaline layer will be formed clear zone with And eliminate dark space between two neighboring semiconductor element, and then lift the Luminescence Uniformity of light emitting module and illumination region Definition.

Above-mentioned be utility model technical scheme general introduction, below in conjunction with accompanying drawing and specific embodiment, to the utility model It is described further.

Brief description

Fig. 1 is the schematic perspective view of the light emitting module of the utility model first embodiment.

Fig. 2 is the cut-away illustration along cutting line A-A cutting for the light emitting module in Fig. 1.

Fig. 3 is the cut-away illustration of the light emitting module of the utility model second embodiment.

Fig. 4 is the cut-away illustration of the light emitting module of the utility model 3rd embodiment.

Fig. 5 is the cut-away illustration of the light emitting module of the utility model fourth embodiment.

Fig. 6 is the cut-away illustration of the light emitting module of the utility model the 5th embodiment.

Fig. 7 is the cut-away illustration of the head lamp of the utility model sixth embodiment.

Wherein, reference：

1 light emitting module

2 head lamps

3 housings

4 lampshades

10 substrates

20 semiconductor elements

210th, 410,610 top surface

220th, 230,510,820 side

30 reflecting layer

310 bodies

320 smooth reflective particles

40th, 60,70,80 hyaline layer

50 light conversion layer

810 outer surfaces

Specific embodiment

Hereinafter detailed features of the present utility model and advantage are described in embodiments in detail, its content is any enough to make Those skilled in the art understands that technology contents of the present utility model are simultaneously implemented according to this, and according in disclosed in this specification Appearance, claims and accompanying drawing, any those skilled in the art can be readily understood upon the related mesh of the utility model And advantage.Below example further describe viewpoint of the present utility model, but non-anyways to limit this practicality New category.

Referring to Fig. 1 and Fig. 2.Fig. 1 is the schematic perspective view of the light emitting module of the utility model first embodiment.Figure 2 is the cut-away illustration along cutting line A-A cutting for the light emitting module in Fig. 1.

In the present embodiment, a light emitting module 1 comprises a substrate 10, multiple semiconductor element 20, a reflecting layer 30, Hyaline layer 40 and a light conversion layer 50.The quantity of semiconductor element 20 is not limited with multiple.In other embodiments, half The quantity of conductor element 20 can be single.

The material of substrate 10 is such as but not limited to ceramic material, only by be used in radiating or cost needs different Property, substrate 10 also by silicon, aluminium or other provided crystal chip bearing metal, nonmetallic material formed.

Semiconductor element 20 is such as but not limited to connect through Flip Chip (also known as brilliant package method, Flip Chip) A LED lighting chip (LED DIE) in substrate 10.These semiconductor elements 20 are all arranged on substrate 10.Each half is led Volume elements part 20 has a top surface 210 and multiple side.Top surface 210 back to substrate 10, and semiconductor element 20 main by Top surface 210 projects a light.That is, top surface 210 has larger amount of light.

Reflecting layer 30 be formed at substrate 10 surface and be surrounded with a space for semiconductor element 20, hyaline layer 40 and Light conversion layer 50 is placed in wherein.Specifically, reflecting layer 30 comprises a body 310 and multiple smooth reflective particle 320, and Light reflective particle 320 is distributed in body 310.The body 310 in reflecting layer 30 is arranged on substrate 10 and partly leads around these Volume elements part 20.And in the middle of above-mentioned many semiconductor elements 20, have part semiconductor element 20 adjoining with reflecting layer 30, and partly lead The side in faced by volume elements part 20 and contact reflecting layer 30 is defined as side 220.Any two adjacent semiconductor elements 20 this A little sides 220 neither face each other.Thereby, the light being produced by semiconductor element 20 is reflected towards light conversion layer 50 in reflecting layer 30 Top surface project to the outside of light emitting module 1, also can avoid light emitting module 1 side produce light leakage phenomena.Above-mentioned body 310 Material is such as but not limited to light transmissive material, and the material of light reflective particle 320 is such as but not limited to selected from titanium oxide (TiO2), one of silica (SiO2), boron nitride (BN) and combinations thereof group being formed.So, reflecting layer 30 is between partly Between transparent and opaque.In the present embodiment, the body 310 in reflecting layer 30 directly engages these sides 220, but this practicality is new Type is not limited thereto.In other embodiments, reflecting layer 30 can keep a distance with these sides 220.

The material of hyaline layer 40 is such as but not limited to silica gel, and has the simple advantage of processing procedure, only presses product design not With substrate 10 can also be glass material.Hyaline layer 40 is arranged on substrate 10, and hyaline layer 40 be covered with adjacent in any two Gap between the two neighboring side of these semiconductor elements 20.Specifically, each semiconductor element 20 is in the face of adjacent its The side system of his semiconductor element 20 is defined as side 230.Between opposed facing two sides 230, there is a gap, and Hyaline layer 40 is covered with during the period gap.That is, tight exists between hyaline layer 40 and these semiconductor elements 20.With this enforcement For for example, semiconductor element 20 is rectangle to example, therefore each semiconductor element 20 at most has and multiple partly leads in the face of adjacent Four sides 230 of volume elements part 20.Reflecting layer 30 is around semiconductor element 20 and hyaline layer 40.Wherein, the side of semiconductor element 20 Light emitted by face 230 can directly navigate on adjacent hyaline layer 40 and form clear zone, or some are by light conversion layer 50 institute The light of refraction also will navigate on hyaline layer 40 and form clear zone, above dark between two neighboring semiconductor element 20 by eliminating Area.Above-mentioned hyaline layer 40 does not have light reflective particle, and the transmittancy of hyaline layer 40 is much larger than reflecting layer 30.Namely Say, the light transmittance (Transmittance) of hyaline layer 40 is apparently higher than reflecting layer 30.Further, the light of hyaline layer 40 Penetrance can be more than or equal to 70%.More preferably, can suitably be made from specific materials hyaline layer 40 light transmittance be more than etc. In 90%.Again more preferably, the light transmittance that suitably can make hyaline layer 40 from specific materials is more than or equal to 96%.The opposing party Face, the light transmittance in reflecting layer 30 can be less than or equal to 35%.More preferably, reflecting layer 30 can suitably be made from specific materials Light transmittance is less than or equal to 20%.Again more preferably, the light transmittance that suitably can be made reflecting layer 30 from specific materials is less than etc. In 8%.

The material of light conversion layer 50 is such as but not limited to fluorescent material (Fluorescent Material) or phosphorescence Material (Phosphorescent Material).Light conversion layer 50 directly engages the top surface 210 of these semiconductor elements 20, And hyaline layer 40 directly engages light conversion layer 50 towards a top surface 410 of light conversion layer 50.In other words, light conversion Layer 50 is completely covered the top surface 210 of all semiconductor elements 20 and the top surface 410 of hyaline layer 40, and semiconductor element 20 He Hyaline layer 40 is all between light conversion layer 50 and substrate 10.Reflecting layer 30 is around light conversion layer 50.Light conversion layer 50 It is suitable to absorb and be partly derived from the light of semiconductor element 20 and project another light, and the light projecting from light conversion layer 50 The wavelength of the wavelength of line and the light projecting from semiconductor element 20 is different.Furthermore, it is understood that aforementioned penetrate from semiconductor element 20 The light going out obtains and is in the interval wave band of visible light with respect to one, precisely because being not limited, this wavelength also obtains with respect to such as infrared The interval wave band of the non-visible light such as line or ultraviolet.For example, the semiconductor element 20 in the present embodiment can have in outgoing The light of blue light wavelength, and this light projects after light conversion layer 50 and has the light of gold-tinted and blue light wavelength and mix Become white light.In addition, in the present embodiment, light conversion layer 50 is attached at semiconductor element 20 and not exclusively coats semiconductor Element 20, that is, light conversion layer 50 do not cover side 220 and the side 230 of semiconductor element 20, and can reduce veiling glare produce.

Additionally, as shown in Fig. 2 these semiconductor elements 20 and hyaline layer 40 have the top surface of totally one horizontal plane.In detail For, in the case of can allowing certain fabrication error, the top surface 210 of each semiconductor element 20 and the top surface of hyaline layer 40 410 can be same level face.Thereby, can preferably configure the light angle from top surface 210 outgoing and determine light be incident in transparent The angle of layer 40, to strengthen the brightness of hyaline layer 40, and then further eliminates between adjacent two semiconductor element 20 Dark space.

Furthermore, in the present embodiment, the thickness of semiconductor element 20 can be 0.030～0.250 centimetre, or is relatively LED crystal particle that should be in power for 1W.The thickness of light conversion layer 50 can be 0.030～0.30 centimetre.Thereby, send out Optical module 1 is relatively suitably applied auto bulb and projector's projection lamp etc. needs the lighting device of high illumination.

In sum, hyaline layer 40 is arranged on substrate 10, and hyaline layer 40 is covered with and partly leads in any two adjacent these Gap between the two neighboring side 230 of volume elements part 20.It is by the reflecting layer setting of low light transmission different from Conventional luminescent module In between two adjacent semiconductor elements, the light emitting module 1 of the present embodiment the hyaline layer 40 of high-transmittance is arranged and be covered with Gap between two semiconductor elements 20.Thereby, the light emitted by side 230 of semiconductor element 20 can directly navigate on adjacent Hyaline layer 40 and form clear zone, or some light being reflected by light conversion layer 50 also will navigate on hyaline layer 40 and be formed bright Area, above will can eliminate the dark space between two neighboring semiconductor element 20, and then lifted light emitting module 1 Luminescence Uniformity and The definition of illumination region.

Refer to Fig. 3, be the cut-away illustration of the light emitting module according to the utility model second embodiment.Due to this enforcement Example is similar to first embodiment, therefore only illustrates with regard to deviation below.

In the present embodiment, light emitting module 1 further includes a hyaline layer 60.Hyaline layer 60 is such as but not limited to silica gel, base Plate 10 can be glass material.Hyaline layer 60 is arranged on substrate 10, and hyaline layer 60 is covered with reflecting layer 30 adjacent semiconductor The gap of element 20.Specifically, in the present embodiment, the side 220 of the semiconductor element 20 near reflecting layer 30 and reflection The body 310 of layer 30 keeps a distance, and hyaline layer 60 is covered with the gap between side 220 and body 310.Namely Say, between the body 310 in semiconductor element 20 and reflecting layer 30, all tight exists.Hyaline layer 40 and hyaline layer 60 can be one Body formed, and faced by hyaline layer 60, a top surface 610 of light conversion layer 50 can directly engage light conversion layer 50.From partly leading When the light of volume elements part 20 outgoing marches to hyaline layer 60, hyaline layer 60 will produce clear zone, lift sending out of light emitting module 1 further The light uniformity.

Additionally, these semiconductor elements 20, hyaline layer 40 and hyaline layer 60 have the top surface of totally one horizontal plane.Come in detail Say, in the case of can allowing certain fabrication error, the top surface 210 of each semiconductor element 20, the top surface 410 of hyaline layer 40 with And the top surface 610 of hyaline layer 60 can be same level face.Thereby, from the light angle of top surface 210 outgoing, from top surface 410 outgoing Light angle and all more suitable from the light angle of top surface 610 outgoing, and the clear zone effect of hyaline layer 40 can be strengthened, and then Eliminate the dark space between two adjacent semiconductor elements 20.

Refer to Fig. 4, be the cut-away illustration of the light emitting module according to the utility model 3rd embodiment.Due to this enforcement Example is similar to second embodiment, therefore only illustrates with regard to deviation below.

In the present embodiment, light emitting module 1 further includes a hyaline layer 70.Hyaline layer 70 is such as but not limited to silica gel, base Plate 10 can be glass material.Hyaline layer 70 is covered with these top surfaces 210 and light conversion layer 50 in these semiconductor elements 20 Between.In other words, hyaline layer 70 is between semiconductor element 20 and light conversion layer 50, and hyaline layer 70 and semiconductor Between element 20, tight exists.Hyaline layer 70 can be covered between the top surface 410 and light conversion layer 50 of hyaline layer 40 and Between the top surface 610 of hyaline layer 60 and light conversion layer 50.Hyaline layer 40, hyaline layer 60 can be that one becomes with hyaline layer 70 Type.Thereby, the light emitted by semiconductor element 20 can directly navigate on adjacent hyaline layer 60 and hyaline layer 70 and be formed bright Area, or some light being reflected by light conversion layer 50 also will navigate on this hyaline layer 70 and form clear zone, or by hyaline layer 70 light being reflected navigate on hyaline layer 60 and form clear zone, above dark between two neighboring semiconductor element 20 by eliminating Area, lifts the Luminescence Uniformity of light emitting module 1 further.

Refer to Fig. 5, be the cut-away illustration of the light emitting module according to the utility model fourth embodiment.Due to this enforcement Example is similar to 3rd embodiment, therefore only illustrates with regard to deviation below.

In the present embodiment, light emitting module 1 further includes a hyaline layer 80.The material of hyaline layer 80 is such as but not limited to glass Glass, sapphire crystal glass (Sapphire Crystal Glass), silica gel or light-permeable ceramic material.Hyaline layer 80 is arranged at Light conversion layer 50, and light conversion layer 50 is between the top surface 210 and hyaline layer 80 of semiconductor element 20.Reflecting layer 30 Can around and directly engage hyaline layer 80.Thereby, from the light of light conversion layer 50 outgoing march to hyaline layer 80 when, hyaline layer 80 Clear zone can be produced and eliminate the dark space between two neighboring semiconductor element 20.

Additionally, in the present embodiment, light conversion layer 50 and hyaline layer 80 have the side of totally one plane.Come in detail Say, in the case of can allowing certain fabrication error, the one side 510 in reflecting layer 30 and hyaline layer faced by light conversion layer 50 80 one side 820 in the face of reflecting layer 30 are totally one vertical plane (vertical coplanar).Thereby, through adjustment side 510 can suitably adjust the angle that light is incident to hyaline layer 80 with the thickness of side 820 collocation reflecting layer 30, and can strengthen clear zone effect Really.

In addition, hyaline layer 80 can have an anti-reflection structure (Anti- back to an outer surface 810 of semiconductor element 20 reflective Structure).For example, anti-reflection structure can be multiple in regularly arranged micron order size taper Post, it can produce graded index (Graded Index), so that light is understood because of variations in refractive index relatively when by outer surface 620 Reduce light reflex for easing up, and contribute to lifting the light extraction efficiency of light emitting module 1.

Refer to Fig. 6, be the cut-away illustration of the light emitting module according to the utility model the 5th embodiment.Due to this enforcement Example is similar to fourth embodiment, therefore only illustrates with regard to deviation below.

In the present embodiment, its at least one side of semiconductor element 20, light conversion layer 50 and hyaline layer 80 is totally one Plane.Specifically, in the case of can allowing certain fabrication error, the side 220 of semiconductor element 20, light conversion layer 50 In the face of the side 820 in the side 510 in reflecting layer 30 and reflecting layer 30 faced by hyaline layer 80 is totally one vertical plane (vertical plane).Thereby, the light from light conversion layer 50 outgoing will navigate on hyaline layer 80 and produce clear zone, and can eliminate adjacent two Dark space between semiconductor element 20.

Additionally, in the present embodiment, when the refractive index of hyaline layer 80 is more than or equal to 1 and is less than or equal to 3 and hyaline layer 80 Thickness when more than 0.2 centimetre (millimeters), its collimating effect is preferable.And weigh the effect of light efficiency and collimation, transparent The thickness suggestion of layer 80 is less than or equal to 3.0 centimetres.That is, the thickness of hyaline layer 80 advises being more than 0.2 centimetre and to be less than or equal to Between 3.0 centimetres.And it is preferred that between the thickness suggestion of hyaline layer 80 is in more than 0.2 and is less than or equal to 1.0 centimetres.Thereby, The refractive index of hyaline layer 80 and thickness are more suitable, and lift the light collimation of light emitting module 1 when forming clear zone.

Furthermore, it is understood that when hyaline layer 80 refractive index is more than or equal to 1 and during less than or equal to 3, can avoid being incident to transparent The light collimation that the refraction angle of the light of layer 80 is excessive and affects light emitting module 1.In addition, when hyaline layer 80 thickness is more than 0.2 li Meter Shi, hyaline layer 80 is provided that the light travel path of sufficient length, and lifts clear zone effect, avoiding clear zone effect on driving birds is not good and The problem eliminating dark space effect on driving birds is not good is led to occur.Furthermore, reflect and oneself because light can produce when entering hyaline layer 80 Refraction can be produced again during hyaline layer 80 outgoing, therefore when hyaline layer 80 thickness is less than or equal to 3.0 centimetres, light can be avoided to be incident to There is excessive horizontal offset in the travel path before hyaline layer 80 and the travel path after self-induced transparency layer 80 outgoing, enter each other And prevent hyaline layer 80 from excessively reducing the light collimation of light emitting module 1.When hyaline layer 80 thickness is less than or equal to 1.0 centimetres, energy Preferably balance eliminates dark space effect and light collimation.Therefore, the thickness through appropriately configured hyaline layer 80 and refractive index, can make Light emitting module 1, in addition to eliminating dark space, also has effect of good light collimation concurrently simultaneously.

Additionally, being assembled again by reflecting layer 30 by the larger outgoing luminous energy of the dispersion angle of hyaline layer 80, also help Light collimation in lifting light emitting module 1.

Light emitting module in the various embodiments described above is suitable to be applied to head lamp.Refer to Fig. 7, be according to the utility model the 6th The cut-away illustration of the head lamp of embodiment.

In the present embodiment, head lamp 2 comprises the light emitting module 1 mentioned by any of the above-described embodiment.Additionally, head lamp 2 also may be used To comprise a housing 3 and a lampshade 4 further.Light emitting module 1 is arranged in a storage tank of housing 3.Lampshade 4 is arranged at housing 3, and contribute to protecting light emitting module 1 to avoid being damaged by aqueous vapor or oil gas.

In sum, in light emitting module disclosed in the utility model, hyaline layer is arranged on substrate, and hyaline layer is covered with Gap between the two neighboring side of any two these adjacent semiconductor elements.It is will be low different from Conventional luminescent module The reflecting layer of luminosity is arranged between adjacent two semiconductor element, and light emitting module disclosed in the utility model is by high-transmittance Hyaline layer arrange and be covered with the gap between two neighboring semiconductor element.Thereby, when light is incident to hyaline layer, transparent Layer will form clear zone, and decapacitation eliminates outside the dark space between two neighboring semiconductor element, and then can lift the luminous of light emitting module The uniformity and the definition of illumination region.

Additionally, the top surface of each semiconductor element and hyaline layer can be same level face towards the top surface of light conversion layer.Mat This, contribute to strengthening the effect that hyaline layer produces clear zone, and can eliminate dark between adjacent two semiconductor element further Area.

Additionally, partly transparent layer contributes to lifting the light collimation of light emitting module so that light emitting module is dark except eliminating Outside area, also have effect of good light collimation concurrently simultaneously.

The above, be only preferred embodiment of the present utility model, not technical scope of the present utility model is made Any restriction, therefore using the technical characteristic identical or approximate with the utility model above-described embodiment, obtained from other luminous moulds Block and its head lamp, all within protection domain of the present utility model.

Claims (7)

1. a kind of light emitting module is it is characterised in that comprise：

One substrate；

Multiple semiconductor elements, are arranged on this substrate, and those semiconductor elements are respectively provided with one first top surface and at least 1 One side, this semiconductor element mainly projects the light with a first wave length through this first top surface；

One light conversion layer, is suitable to absorption part and has the light of this first wave length and project the light with a second wave length； And

One first hyaline layer, does not have light reflective particle, and this first hyaline layer is arranged on this substrate, and this first hyaline layer cloth Full gap between this first side two neighboring of any two those adjacent semiconductor elements.

2. it is characterised in that also comprising a reflecting layer, wherein this reflecting layer is arranged at light emitting module as claimed in claim 1 On this substrate, and this reflecting layer is located in those semiconductor elements mutually near a non-conterminous second side.

3. light emitting module as claimed in claim 2 it is characterised in that this reflecting layer around those semiconductor elements, this first Hyaline layer and this light conversion layer.

4. light emitting module as claimed in claim 2 is it is characterised in that also comprise one second hyaline layer, and wherein this is second transparent Layer is arranged on this substrate, and this second hyaline layer is covered with the gap between this reflecting layer and this semiconductor element adjacent.

5. light emitting module as claimed in claim 4 is it is characterised in that this first hyaline layer and this second hyaline layer all directly connect Close this light conversion layer.

6. light emitting module as claimed in claim 4 it is characterised in that those first top surfaces of those semiconductor elements, this One second top surface of one hyaline layer and one the 3rd top surface totally one horizontal plane of this second hyaline layer.

7. a kind of head lamp comprising the arbitrary described light emitting module of claim 1 to 6.