CN205985004U - TVS diode of can establishing ties - Google Patents
TVS diode of can establishing ties Download PDFInfo
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- CN205985004U CN205985004U CN201620910796.9U CN201620910796U CN205985004U CN 205985004 U CN205985004 U CN 205985004U CN 201620910796 U CN201620910796 U CN 201620910796U CN 205985004 U CN205985004 U CN 205985004U
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Abstract
The utility model discloses a TVS diode of can establishing ties, including packaging body and diode body, diode body arranges in inside the packaging body, the left side of packaging body inwards is equipped with the draw -in groove, the right side of packaging body outwards is equipped with the buckle with card slot well -matched, diode body includes the chip, the pin, metal contact and lead wire, the left and right sides at the chip upper surface is fixed to the metal contact, the lower surface of chip is equipped with the DAF membrane, the pin passes through the DAF membrane and fixes the left and right sides at the chip, the free end of pin runs through the packaging body and extends to the packaging body outside, the inside packing of packaging body has epoxy. The beneficial effects of the utility model are that: set up draw -in groove and buckle respectively, the diode series connection use of being convenient for through the left and right sides at the packaging body, when the chip is punctured, puncturing the P cake core earlier, avoiding directly puncturing the chip, maintaining voltage is stable, reaches the purpose of protection circuit, the pin increases the pier nose, and the anti stress ability of increase pin prevents that diode internal chip from pulling and going between and fracture, not hard up appears.
Description
Technical field
This utility model is related to diode technologies field, and more particularly to one kind can be connected TVS diode.
Background technology
The classification of diode has many kinds, and one of which is TVS diode (transient voltage suppressor diode), such two pole
Pipe, under the conditions of applied in reverse, can be changed to rapidly very low when institute's making alive changes within the specific limits by original high impedance
Conduction value, voltage clamp to predetermined voltage, thus effectively eliminate the harm to sensory system equipment, element.TVS can be used for
Anti-lightning strike, anti-overvoltage, anti-interference, absorption surge power etc., are a kind of preferable protection devices.In prior art, generally adopt
Produce TVS diode chip with the production technology that single knot is spread in paper source twice, its existing problem is：Using the life of single diffusion junctions
When producing TVS diode chip, during reverse breakdown, the surface breakdown voltage of table top is less than internal breakdown voltage, causes surface breakdown
Prior to puncturing in vivo, near table top, table top is made up of with glassy layer breakdown current integrated distribution silicon, and mutual stress is larger, makes
Become reverse breakdown electric leakage larger.Junction temperature is caused greatly to raise, the problems such as product reliability is deteriorated because electric leakage becomes.Using the diffusion of paper source
Junction depth uneven, cause punch through voltage and be not sufficiently stable, Surge handling capability is poor.And TVS diode can only used aloned, and make
Shorter with the life-span.Further, due to, when on welding diode to circuit board, needing wire kink, thus easily cause lead
Internal fracture, loosen so that product loses electrical connection properties and becomes waste product.Even and if employ pier nose structure, also by
Cause pier nose resistance to stress scarce capacity in pier nose thickness low LCL, lead to stress to be transmitted to the direct contact surface of lead and chip, make
Chip is become to pull.
Content of the invention
In order to solve the problems, such as above-mentioned prior art, the purpose of this utility model is to provide one kind can connect TVS
Diode, is respectively provided with draw-in groove and buckle by the left and right sides in packaging body, is easy to multiple Diode series and uses；Chip quilt
When puncturing, first puncture p-type chip, it is to avoid directly puncture chip, maintain stablizing of diode voltage, reach the mesh of protection circuit
's；The pin of chip increases pier nose, increases the resistance to stress ability of pin, prevents diode inside chip from pulling and occurs with lead
Rupture, loosen.
The technical solution adopted in the utility model is：One kind can be connected TVS diode, including packaging body and diode this
Body, described diode body is placed in package interior, and the left side of described packaging body is provided inwardly with draw-in groove, the right side of described packaging body
To being externally provided with the buckle matching with draw-in groove, described diode body includes chip, pin, hard contact and lead, described gold
Belong to the left and right sides that contact is fixed on chip upper surface, the lower surface of described chip is provided with DAF film, described pin passes through DAF film
It is fixed on the left and right sides of chip, the free end of described pin runs through packaging body and extends to outside packaging body, described encapsulation is internal
Portion is filled with epoxy resin.
It is preferred that, described chip includes the first metal layer, N+ diffusion junctions, p-type chip, P++ diffusion junctions and second
Metal level, described the first metal layer, N+ diffusion junctions, p-type chip and P++ diffusion junctions are fixed from top to bottom successively, described p-type chip
It is provided with P+ diffusion junctions, described P+ diffusion junctions are extended by p-type chip and run through N+ diffusion junctions.
It is preferred that, the outer surface of described p-type chip and N+ diffusion junctions is equipped with glass edge.
It is preferred that, the outer surface of described packaging body is provided with film layer, and the surface of described film layer is set to coarse table
Face.
It is preferred that, described pin is sequentially provided with the first pier nose and the second pier nose, and described first pier nose is connect with chip
Touch.
It is preferred that, described first pier nose is set to cone-shaped nib shape, and the thickness of described second pier nose is set to
0.15mm-1mm.
It is preferred that, described DAF film is set to high-temperature insulation film.
It is preferred that, the thickness of described DAF film is set to no more than 25 μm.
The beneficial effects of the utility model are：
1st, draw-in groove and buckle are respectively provided with by the left and right sides in packaging body, are easy to multiple Diode series and use,
Set up film layer, internal filling epoxy resin outside packaging body, improve the life-span of diode；
2nd, when diode by electric current excessive and breakdown when, puncture the p-type chip of chip internal first, it is to avoid directly hit
Punching piece, can maintain stablizing of diode voltage, reach the purpose of protection circuit；
3rd, diode chip for backlight unit reverse current is evenly distributed, it is to avoid because local current is excessive, causes hot-spot to lose efficacy, carries
High reliability, it is ensured that the reverse surge ability stability of diode and reliability while reducing reverse leakage current, extends
Life-span of diode；
4th, the pin of chip increases pier nose, due to the presence of pier nose and the thickening of size in welding, increases the anti-of pin
Stress ability, is prevented from the direct contact surface that stress is directly transferred to lead and chip, prevents diode inside chip from pulling
Fracture occurs, loosens with lead.
Brief description
Fig. 1 is structural representation of the present utility model.
Fig. 2 is the structural representation of the chip of this utility model diode body.
Wherein：
Packaging body -1 diode body -2 draw-in groove -3
Buckle -4 chip -5 pin -6
Hard contact -7 lead -8 DAF film -9
First pier nose -10 second pier nose -11 epoxy resin -12
Film layer -13 the first metal layer -51 N+ diffusion junctions -52
P-type chip -53 P+ diffusion junctions -54 P++ diffusion junctions -55
Second metal layer -56
Specific embodiment
With embodiment, the technical solution of the utility model is illustrated below in conjunction with the accompanying drawings.
Shown in seeing figures.1.and.2, one kind can be connected TVS diode, including packaging body 1 and diode body 2, described two
Pole pipe body 2 is placed in inside packaging body 1, and the left side of described packaging body 1 is provided inwardly with draw-in groove 3, and the right side of described packaging body 1 is outside
It is provided with the buckle 4 matching with draw-in groove 3, described diode body 2 includes chip 5, pin 6, hard contact 7 and lead 8, described
Hard contact 7 is fixed on the left and right sides of chip 5 upper surface, and the lower surface of described chip 5 is provided with DAF film 9, and described pin 6 leads to
Cross the left and right sides that DAF film 9 is fixed on chip 5, the free end of described pin 6 runs through packaging body 1 and extends to outside packaging body 1,
It is filled with epoxy resin 12 inside described packaging body 1.Draw-in groove 3 and buckle 4 are respectively provided with by the left and right sides in packaging body 1,
It is easy to multiple Diode series to use.Assume have multiple diodes to need to be used in series, the left side draw-in groove 3 of diode and left side phase
The mutual clamping of right side buckle 4 of adjacent diode is fixed, the right side buckle 4 of diode and the left side draw-in groove 3 of right side neighboring diode
Mutually clamping is fixed, thus realizing connecting, can realize multiple two using this draw-in groove 3 being mutually matched, buckle 4 structure simultaneously
Pole pipe is connected, and has greatly expanded the range of diode.And set up film layer 13, internal ring type filling outside packaging body 1
Oxygen tree fat 12, then enhance the stability of diode, improves the life-span of diode.
Described chip 5 includes the first metal layer 51, N+ diffusion junctions 52, p-type chip 53, P++ diffusion junctions 50 and the second metal
Layer 56, described the first metal layer 51, N+ diffusion junctions 52, p-type chip 53 and P++ diffusion junctions 55 are fixed from top to bottom successively, described P
Cake core 53 is provided with P+ diffusion junctions 54, and described P+ diffusion junctions 54 are extended by p-type chip 53 and run through N+ diffusion junctions 52.Work as diode
By electric current excessive and breakdown when, puncture the p-type chip 53 within chip 5 first, it is to avoid directly puncture chip 5, Ke Yiwei
Hold stablizing of diode voltage, reach the purpose of protection circuit；Diode chip for backlight unit 5 reverse current is evenly distributed, it is to avoid because of local
Electric current is excessive, cause hot-spot to lose efficacy, and improves reliability, it is ensured that diode while reducing reverse leakage current
Reverse surge ability stability and reliability, extend the life-span of diode.
The outer surface of described p-type chip 53 and N+ diffusion junctions 52 is equipped with glass edge.
The outer surface of described packaging body 1 is provided with film layer 13, and the surface of described film layer 13 is set to rough surface.
Described pin 6 is sequentially provided with the first pier nose 10 and the second pier nose 11, and described first pier nose 10 is contacted with chip 5.
Described first pier nose 10 is set to cone-shaped nib shape, and the thickness of described second pier nose 11 is set to 0.15mm-1mm.Draw
Foot 6 increases the first pier nose 10 and the second pier nose 11, due to the presence of the first pier nose 10 and adding of the second pier nose 11 size in welding
Thickness, increases the resistance to stress ability of pin 6, is prevented from the direct contact surface that stress is directly transferred to lead 8 and chip 5, prevents
Only diode inside chip 5 is pulled and fracture, loosen with lead 8.
Described DAF film 9 is set to high-temperature insulation film it is ensured that the heat-resisting quantity of diode.
The thickness of described DAF film 9 is set to no more than 25 μm, reduces overall package thickness.
Above-described embodiment is only that of the present utility model ultimate principle, principal character and advantage have been shown and described.The industry
Technical staff it should be appreciated that this utility model is not restricted to the described embodiments, described in above-described embodiment and description
Principle of the present utility model is simply described, on the premise of without departing from this utility model spirit and scope, this utility model also can
There are various changes and modifications, these changes and improvements both fall within the range of claimed this utility model.
Claims (8)
1. one kind can connect TVS diode it is characterised in that：Including packaging body (1) and diode body (2), described diode
Body (2) is placed in packaging body (1) inside, and the left side of described packaging body (1) is provided inwardly with draw-in groove (3), the right side of described packaging body (1)
Laterally it is externally provided with the buckle (4) matching with draw-in groove (3), described diode body (2) includes chip (5), pin (6), metal
Contact (7) and lead (8), described hard contact (7) is fixed on the left and right sides of chip (5) upper surface, under described chip (5)
Surface is provided with DAF film (9), and described pin (6) is fixed on the left and right sides of chip (5) by DAF film (9), described pin (6)
Free end runs through packaging body (1) and extends to packaging body (1) outside, is filled with epoxy resin (12) inside described packaging body (1).
2. one kind according to claim 1 can connect TVS diode it is characterised in that：Described chip (5) includes the first gold medal
Belong to layer (51), N+ diffusion junctions (52), p-type chip (53), P++ diffusion junctions (50) and second metal layer (56), described first metal
Layer (51), N+ diffusion junctions (52), p-type chip (53) and P++ diffusion junctions (55) are fixed from top to bottom successively, described p-type chip
(53) it is provided with P+ diffusion junctions (54), described P+ diffusion junctions (54) are extended by p-type chip (53) and run through N+ diffusion junctions (52).
3. one kind according to claim 2 can connect TVS diode it is characterised in that：Described p-type chip (53) and N+ expand
The outer surface of eliminating stagnation (52) is equipped with glass edge.
4. one kind according to claim 1 can connect TVS diode it is characterised in that：The outer surface of described packaging body (1)
It is provided with film layer (13), the surface of described film layer (13) is set to rough surface.
5. one kind according to claim 1 can connect TVS diode it is characterised in that：Described pin (6) is sequentially provided with
One pier nose (10) and the second pier nose (11), described first pier nose (10) is contacted with chip (5).
6. one kind according to claim 5 can connect TVS diode it is characterised in that：Described first pier nose (10) is set to
Cone-shaped nib shape, the thickness of described second pier nose (11) is set to 0.15mm-1mm.
7. one kind according to claim 1 can connect TVS diode it is characterised in that：Described DAF film (9) is set to resistance to height
Warm dielectric film.
8. one kind according to claim 1 can connect TVS diode it is characterised in that：The thickness of described DAF film (9) sets
For being not more than 25 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620910796.9U CN205985004U (en) | 2016-08-19 | 2016-08-19 | TVS diode of can establishing ties |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620910796.9U CN205985004U (en) | 2016-08-19 | 2016-08-19 | TVS diode of can establishing ties |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205985004U true CN205985004U (en) | 2017-02-22 |
Family
ID=58031946
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620910796.9U Active CN205985004U (en) | 2016-08-19 | 2016-08-19 | TVS diode of can establishing ties |
Country Status (1)
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| CN (1) | CN205985004U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115966525A (en) * | 2022-12-27 | 2023-04-14 | 江苏威森美微电子有限公司 | TVS diode packaging structure |
-
2016
- 2016-08-19 CN CN201620910796.9U patent/CN205985004U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115966525A (en) * | 2022-12-27 | 2023-04-14 | 江苏威森美微电子有限公司 | TVS diode packaging structure |
| CN115966525B (en) * | 2022-12-27 | 2023-12-08 | 江苏威森美微电子有限公司 | TVS diode packaging structure |
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| GR01 | Patent grant |