CN205944105U - Polycrystal silicon chip with filter ultraviolet ray and antireflection photo polymerization - Google Patents

Polycrystal silicon chip with filter ultraviolet ray and antireflection photo polymerization Download PDF

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Publication number
CN205944105U
CN205944105U CN201620952830.9U CN201620952830U CN205944105U CN 205944105 U CN205944105 U CN 205944105U CN 201620952830 U CN201620952830 U CN 201620952830U CN 205944105 U CN205944105 U CN 205944105U
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CN
China
Prior art keywords
layer
polysilicon chip
chip body
silicon chip
polycrystal silicon
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Expired - Fee Related
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CN201620952830.9U
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Chinese (zh)
Inventor
孙显强
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Wenzhou Sailafu Energy Co Ltd
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Wenzhou Sailafu Energy Co Ltd
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Priority to CN201620952830.9U priority Critical patent/CN205944105U/en
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Abstract

The utility model discloses a polycrystal silicon chip with filter ultraviolet ray and antireflection photo polymerization, the surface of polycrystal silicon chip body is provided with vice grid line and main grid line, the both ends of polycrystal silicon chip body all are provided with the electrode that converges, just the electrode that converges is converged respectively by vice grid line and main grid line and constitutes, the edgewise cladding of polycrystal silicon chip body has the butadiene rubber layer, polycrystal silicon chip body includes sculpture fine hair layer, the downside on sculpture fine hair layer is provided with anti -reflection coating, anti -reflection coating's lower surface is connected with P type polycrystalline silicon layer, P type polycrystalline silicon layer's downside is provided with N type polycrystalline silicon layer, ultraviolet thin layer is strained in N type polycrystalline silicon layer's lower surface laminating, and the device improves the light energy absorption efficiency, filters the ultraviolet linear light, increases the EVA who uses with the cooperation of polycrystal silicon chip and glues life, has lengthened the working life who comprises the battery piece the polycrystal silicon chip.

Description

A kind of polysilicon chip with filters ultra violet line and antireflection light action
Technical field
This utility model belongs to polysilicon chip technical field and in particular to one kind has filters ultra violet line and antireflection light is made Polysilicon chip.
Background technology
Energy shortage and environmental pollution are century two significant problems being faced of the mankind, become international community's economic development Bottleneck.Solar energy provides, as the regenerative resource of cleanliness without any pollution, the preferred embodiments solving this two problems.At present, such as What is developed photoelectric transformation efficiency height, life-span length, stable performance and solar cell with low cost and has caused the whole world Extensive concern.Therefore, the needs based on era development, solar cell has wide development space.Solar energy power generating Market is vigorously developed, and between past 10 years, solar cell market is increased rapidly with 40% ratio every year, wherein crystal Silicon solar cell occupies the market share of solar cell nearly 90%, and because polysilicon chip is made after cell piece, EVA glue is long-term Irradiated by ultraviolet and lead to aging yellowing, affect electricity conversion, lead to cell piece service life to decline, light-absorption layer is in extinction During have source reflection, greatly reduce light source utilization rate.
Utility model content
The purpose of this utility model is to provide a kind of polysilicon chip with filters ultra violet line and antireflection light action, with Solve the problems, such as to propose in above-mentioned background technology.
For achieving the above object, this utility model provides following technical scheme:One kind has filters ultra violet line and antireflection The polysilicon chip of light action, including polysilicon chip body, the surface of described polysilicon chip body is provided with secondary grid line and main gate line, The edgewise of described polysilicon chip body is coated with butadiene rubber layer, and described polysilicon chip body includes etching pile layer, described etching The downside of pile layer is provided with anti-reflective film, and the lower surface of described anti-reflective film is connected with p-type polysilicon layer, described p-type polysilicon The downside of layer is provided with N-type polycrystalline silicon layer, and the lower surface of described N-type polycrystalline silicon layer is fitted with filter ultraviolet thin layer.
Preferably, the two ends of described polysilicon chip body are provided with bus electrode, and described bus electrode is by secondary grid line Conflux respectively composition with main gate line.
Preferably, the corner of described polysilicon chip body is provided with chamfering, and chamfering and seamed edge angle at 45 °.
Preferably, described pair grid line and main gate line are arranged in a mutually vertical manner, and main gate line is at least provided with four, and equidistantly set Put.
Technique effect of the present utility model and advantage:This has filters ultra violet line and the polysilicon chip of antireflection light action, Butadiene rubber layer is had by the Surface coating in polysilicon chip body, and the corner of polysilicon chip body is provided with 45 ° of chamferings, prevent The breakage that only polysilicon chip is led to due to turning collision during transport, during light energy absorption conversion, partly light Source is passed through refraction and is scattered and disappeared, and reduces the absorbance to light, leads to light energy use efficiency low, anti-by the downside setting in etching pile layer Reflectance coating, it is ensured that during illumination, reducing source reflection, improves the absorption efficiency of light source, is conducive to improving photoelectric conversion, leads to The ultraviolet being irradiated into is carried out refraction and filters by filters ultra violet line thin layer, prevent ultraviolet long-time irradiate lead to The EVA glue aging yellowing that polysilicon chip body is sealing adhesive, affects polysilicon chip electricity conversion, affects service life, should Device improves light energy absorption efficiency, filters ultra violet linear light, increases the EVA glue service life using cooperatively with polysilicon chip, extends It is made up of the working life of cell piece polysilicon chip.
Brief description
Fig. 1 is polysilicon chip main structure diagram of the present utility model;
Fig. 2 is polysilicon chip cross section structure diagram of the present utility model.
In figure:1 polysilicon chip body, 2 butadiene rubber layers, 3 secondary grid lines, 4 main gate line, 5 etching pile layer, 6 anti-reflective films, 7 Light-absorption layer, 8 p-type polysilicon layers, 9 N-type polycrystalline silicon layers, 10 filter ultraviolet thin layers.
Specific embodiment
Below in conjunction with the accompanying drawing in this utility model embodiment, the technical scheme in this utility model embodiment is carried out Clearly and completely description is it is clear that described embodiment is only a part of embodiment of this utility model rather than whole Embodiment.Based on the embodiment in this utility model, those of ordinary skill in the art are not under the premise of making creative work The every other embodiment being obtained, broadly falls into the scope of this utility model protection.
This utility model provides a kind of polysilicon with filters ultra violet line and antireflection light action as shown in Figure 1-2 Piece, including polysilicon chip body 1, the surface of described polysilicon chip body 1 is provided with secondary grid line 3 and main gate line 4, described polysilicon The edgewise of piece body 1 is coated with butadiene rubber layer 2, and described polysilicon chip body 1 includes etching pile layer 5, described etching pile layer 5 Downside is provided with anti-reflective film 6, and the lower surface of described anti-reflective film 6 is connected with p-type polysilicon layer 8, described p-type polysilicon layer 8 Downside be provided with N-type polycrystalline silicon layer 9, the lower surface of described N-type polycrystalline silicon layer 9 is fitted with filter ultraviolet thin layer 10.
Further, the two ends of described polysilicon chip body 1 are provided with bus electrode, and described bus electrode is by secondary grid Line 3 and main gate line 4 are confluxed composition respectively, and the electronics being easy to for luminous energy to change into electric energy is transmitted by bus electrode.
Further, the corner of described polysilicon chip body 1 is provided with chamfering, and chamfering and seamed edge angle at 45 °, passes through Polysilicon chip body 1 chamfering of butadiene rubber layer 2 cladding, greatly reduces what polysilicon chip collision during transport led to Fraction defective.
Further, described pair grid line 3 and main gate line 4 are arranged in a mutually vertical manner, and main gate line 4 is at least provided with four, and It is placed equidistant, secondary grid line 3 and main gate line 4, as gate-shaped electrode, play the effect of conduction of confluxing.
Operation principle:The surface of polysilicon chip body 1 is provided with secondary grid line 3 and main gate line 4, is arranged in a mutually vertical manner, and secondary Grid line 3 and main gate line 4, as gate-shaped electrode, play the effect of conduction of confluxing, and the edgewise of polysilicon chip body 1 is coated with along fourth rubber Glue-line 2, and the corner of polysilicon chip body 1 is provided with 45 ° of chamferings, it is to avoid the rupture leading to because of turning collision, affect product Quality, the downside of etching pile layer 5 is provided with anti-reflective film 6, reduces luminous energy refraction by anti-reflective film 6 and scatters and disappears, improves luminous energy profit With rate, the lower surface of N-type polycrystalline silicon layer 9 is fitted with filters ultraviolet thin layer 10, and reducing ultraviolet pair is made with polysilicon chip cooperation The irradiation of EVA glue, reduces the aging of EVA glue, improves the service life of the cell piece being made up of polysilicon chip.
Finally it should be noted that:The foregoing is only preferred embodiment of the present utility model, be not limited to this Utility model, although being described in detail to this utility model with reference to the foregoing embodiments, for those skilled in the art For, it still can be modified to the technical scheme described in foregoing embodiments, or to wherein some technical characteristics Carry out equivalent, all within spirit of the present utility model and principle, any modification, equivalent substitution and improvement made etc., all Should be included within protection domain of the present utility model.

Claims (4)

1. a kind of polysilicon chip with filters ultra violet line and antireflection light action, including polysilicon chip body(1), its feature exists In:Described polysilicon chip body(1)Surface be provided with secondary grid line(3)And main gate line(4), described polysilicon chip body(1)'s Edgewise is coated with butadiene rubber layer(2), described polysilicon chip body(1)Including etching pile layer(5), described etching pile layer(5)'s Downside is provided with anti-reflective film(6), described anti-reflective film(6)Lower surface be connected with p-type polysilicon layer(8), described p-type polycrystalline Silicon layer(8)Downside be provided with N-type polycrystalline silicon layer(9), described N-type polycrystalline silicon layer(9)Lower surface be fitted with filter ultraviolet thin Film layer(10).
2. a kind of polysilicon chip with filters ultra violet line and antireflection light action according to claim 1, its feature exists In:Described polysilicon chip body(1)Two ends be provided with bus electrode, and described bus electrode is by secondary grid line(3)And main grid Line(4)Conflux composition respectively.
3. a kind of polysilicon chip with filters ultra violet line and antireflection light action according to claim 1, its feature exists In:Described polysilicon chip body(1)Corner be provided with chamfering, and chamfering and seamed edge angle at 45 °.
4. a kind of polysilicon chip with filters ultra violet line and antireflection light action according to claim 1, its feature exists In:Described pair grid line(3)And main gate line(4)It is arranged in a mutually vertical manner, and main gate line(4)At least provided with four, and it is placed equidistant.
CN201620952830.9U 2016-08-25 2016-08-25 Polycrystal silicon chip with filter ultraviolet ray and antireflection photo polymerization Expired - Fee Related CN205944105U (en)

Priority Applications (1)

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CN201620952830.9U CN205944105U (en) 2016-08-25 2016-08-25 Polycrystal silicon chip with filter ultraviolet ray and antireflection photo polymerization

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CN201620952830.9U CN205944105U (en) 2016-08-25 2016-08-25 Polycrystal silicon chip with filter ultraviolet ray and antireflection photo polymerization

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107195727A (en) * 2017-05-03 2017-09-22 北京捷宸阳光科技发展有限公司 The manufacture method of half-cell piece

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107195727A (en) * 2017-05-03 2017-09-22 北京捷宸阳光科技发展有限公司 The manufacture method of half-cell piece

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CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20170208

Termination date: 20200825