CN205856650U - GaSb crystal growth knot screen - Google Patents
GaSb crystal growth knot screen Download PDFInfo
- Publication number
- CN205856650U CN205856650U CN201620817387.4U CN201620817387U CN205856650U CN 205856650 U CN205856650 U CN 205856650U CN 201620817387 U CN201620817387 U CN 201620817387U CN 205856650 U CN205856650 U CN 205856650U
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- CN
- China
- Prior art keywords
- remove impurity
- crucible
- connector
- crystal
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
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- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
The utility model discloses a kind of GaSb crystal growth knot screen.This knot screen includes remove impurity connector and remove impurity crucible two parts, and the Cz single crystal furnace seed crystal device consisted of with by seed crystal bracing wire, seed rod and seed crystal remove impurity connector is connected；Remove impurity connector and remove impurity crucible are all set to cylinder, and the upper end of remove impurity connector is provided with the centre bore being connected with seed rod, and this centre bore internal diameter is more than seed rod bracing wire external diameter and less than seed rod external diameter, and remove impurity connector is hung on seed rod by this centre bore；The lower end of remove impurity connector is welded with the upper end of remove impurity crucible；Remove impurity crucible external diameter is less than growth crucible internal diameter 3 5mm, and remove impurity crucible bottom is set to netted, to go the removal of impurity, retains pure melt.Use the impurity during this device removable LEC method growth GaSb monocrystalline, eliminate the impurity impact on becoming crystalline substance, improve crystal forming rate and crystal mass.
Description
Technical field
This utility model relates to single crystal preparation technology, particularly relates to a kind of GaSb crystal growth knot screen.
Background technology
Use LEC(fluid-tight czochralski method) method carries out GsSb(gallium antimonide) crystal growth.LEC method growth crystal is divided into following several
The individual stage: molten crystalline substance, shouldering, receipts shoulder, isodiametric growth, ending.When heating up molten crystalline substance, often owing to causing GaSb to grow under hot conditions
Raw material and air reaction, predominantly raw material are oxidized, and the solid impurity formed swims on melt.In the shouldering stage, these
Impurity is bonded to seed crystal face, affects normal flow field and crystal normal growth so that single-crystal surface is mingled with impurity, concavo-convex not
Flat, cause crystal pulling failure.
Affect that crystalline substance when LEC method becomes brilliant principal element to comprise molten brilliant temperature, shouldering, receipts shoulder turns, pot turns, crystalline substance rises, pot rises
And rate of temperature fall.When shouldering, raw material melt more connects with seed crystal for the pure crystal forming rate that more can improve crystal, especially surface
Contact portion position free from admixture.Simultaneously brilliant turn and pot transfers the flow field that crystal growth created to and also should be ideal laminar flow.?
In existing LEC method single crystal growing furnace, unspecial reserved device or structure remove the impurity in melt.
Summary of the invention
The technical problem existed in view of prior art and present situation, the purpose of this utility model is at existing LEC single crystal growing furnace
On the basis of, in the case of single crystal growing furnace not being carried out large-scale change, increase a kind of device at seed rod position, thus reach to remove
The effect of impurity in melt.
This utility model is adopted the technical scheme that by reaching above-mentioned purpose: a kind of GaSb crystal growth remove impurity dress
Put, it is characterised in that: this knot screen includes remove impurity connector and remove impurity crucible two parts, and by remove impurity connector and by seed
The Cz single crystal furnace seed crystal device that crystalline style bracing wire, seed rod and seed crystal are constituted connects；Remove impurity connector and remove impurity crucible are all set to circle
Cylindricality, the upper end of remove impurity connector is provided with the centre bore being connected with seed rod, and this centre bore internal diameter is more than seed rod bracing wire external diameter
And less than seed rod external diameter, remove impurity connector is hung on seed rod by this centre bore；The lower end of remove impurity connector and remove impurity earthenware
The upper end welding of crucible；Remove impurity crucible external diameter is less than growth crucible internal diameter 3-5mm, and remove impurity crucible bottom is set to netted, to go remove impurity
Matter, retains pure melt.
This utility model mainly adds remove impurity connector and remove impurity crucible, and both can be connected together.Remove impurity connector
Upper end is poroid, and its internal diameter is more than seed rod bracing wire external diameter and less than seed rod external diameter so that it is can hang on seed rod not
Drop.Remove impurity crucible external diameter should be less than growth crucible internal diameter 3-5mm, and bottom is netted, goes the removal of impurity by these nets, retains pure
Clean melt.Whole height H(is as shown in Figure 2) should be higher than that remove impurity crucible decline completely after seed crystal drop to Fluid Contacting identity distance from,
The cancellation element impact on crystal pulling height.Additionally, the hook increased on remove impurity crucible outer wall can hang over heater or other is firm
Property non-friable growth crucible on, it is to avoid cause crucible to crush the pressure of growth crucible.
Overall knot screen uses high-purity quartz to make.When making, knot screen can be divided into for reduction cost and removing
Miscellaneous connector and remove impurity crucible two parts, after finishing respectively, then be welded as a whole.
The beneficial effects of the utility model are: use the impurity during this device removable LEC method growth GaSb monocrystalline,
Eliminate the impurity impact on becoming crystalline substance, improve crystal forming rate and crystal mass.
Accompanying drawing explanation
Fig. 1 is Cz single crystal furnace seed crystal device schematic diagram；
Fig. 2 is knot screen and seed crystal device connection diagram；
Fig. 3 is knot screen schematic diagram；
Fig. 4 is the top view that in Fig. 3, remove impurity crucible amplifies；
Fig. 5 is that material completes front knot screen and growth crucible relative position relation schematic diagram；
Fig. 6 is the position relationship schematic diagram that after material completes, knot screen drops in growth crucible.
Detailed description of the invention
Below in conjunction with drawings and Examples, the utility model is described in further detail.
Referring to figs. 1 through Fig. 6, first according to remove impurity crucible 6 internal diameter of GaSb crystal growth situation design, external diameter and whole
Height H.Install by the mode in Fig. 2.After material (GaSb) becomes melt completely, knot screen 4 is dropped to growth crucible 8
Bottom.This knot screen 4 overcomes the buoyancy produced when sinking to melt mainly by the gravity of device self, so for different
Raw material, can increase briquetting on crucible connector 5 according to concrete fusant density and increase its weight.Decline at remove impurity crucible 6
During melt flow through by the net bottom remove impurity crucible 6, and impurity is blocked in outside.When remove impurity crucible 6 is brought down completely to
Time bottom growth crucible 8, seed crystal 3, also not in contact with melt, can be continued to decline according to actual process by seed crystal 3, starts molten crystalline substance, puts
Shoulder, receipts shoulder, isodiametric growth.During crystal growth, seed crystal 3 position and the relative distance of growth crucible elongated, highly H
Appropriate design calculate (seed rod drop to make seed crystal just contact with molten surface time, H=h+ crystal height+growth crucible height
Degree+liquation height+remove impurity crucible base thickness degree+surplus, on seed rod, distance h with remove impurity part junction to molten surface is
300mm, institute's crystal pulling height is 30mm, growth crucible height 50mm, liquation height 40mm, and remove impurity crucible base thickness degree is 2mm, remaining
When amount is for 20mm, H=300+30+50+40+2+20=442mm) so that crystal is before growing completely, and seed rod 2 will not will remove
Miscellaneous crucible 6 is mentioned, and affects crystal growth.
After crystal growth completes, seed rod 2 is risen certain altitude and makes knot screen 4 depart from liquid level, protect growth crucible
8, knot screen 4 and surplus material.
Embodiment: this knot screen 4 includes remove impurity connector 5 and remove impurity crucible 6 two parts, and by remove impurity connector 5
The Cz single crystal furnace seed crystal device constituted with by seed rod bracing wire 1, seed rod 2 and seed crystal 3 is connected；Remove impurity connector 5 and remove impurity earthenware
Crucible 6 is all set to cylinder, and the upper end of remove impurity connector 5 is provided with the centre bore being connected with seed rod 2, and this centre bore internal diameter is more than seed
Crystalline style bracing wire 1 external diameter 1mm, and less than seed rod 2 external diameter, (if seed rod bracing wire external diameter is 1mm, seed rod 2 external diameter is 6mm, then
Centre bore internal diameter can be 2-3mm), remove impurity connector 5 is hung on seed rod 2 by this centre bore；The lower end of remove impurity connector 5 with
The upper end welding of remove impurity crucible 6；If remove impurity crucible 6 external diameter less than growth crucible 8 internal diameter 3-5mm(growth crucible 8 internal diameter is
60mm, then remove impurity crucible 6 external diameter is 55-57mm), it is set to netted bottom remove impurity crucible 6, to go the removal of impurity, retains pure melting
Body.
Remove impurity crucible 6 outer wall of this knot screen is provided with hook 7, by hook 7, remove impurity crucible 6 is hung over growth crucible
(can also hang on the heaters) on 8, it is to avoid cause growth crucible 8 to crush the pressure of growth crucible 8.
This knot screen 4 all uses quartz material to make.
Claims (3)
1. GaSb crystal growth knot screen, it is characterised in that: this knot screen (4) include remove impurity connector (5) and
Remove impurity crucible (6) two parts, and by remove impurity connector (5) and be made up of seed rod bracing wire (1), seed rod (2) and seed crystal (3)
Cz single crystal furnace seed crystal device connect；Remove impurity connector (5) and remove impurity crucible (6) are all set to cylinder, remove impurity connector (5)
Upper end is provided with the centre bore being connected with seed rod (2), and this centre bore internal diameter is more than seed rod bracing wire (1) external diameter and less than seed rod
(2) external diameter, remove impurity connector (5) is hung on seed rod (2) by this centre bore；The lower end of remove impurity connector (5) and remove impurity earthenware
The upper end welding of crucible (6)；Remove impurity crucible (6) external diameter is less than growth crucible (8) internal diameter 3-5mm, and remove impurity crucible (6) bottom is set to net
Shape, to go the removal of impurity, retains pure melt.
GaSb crystal the most according to claim 1 growth knot screen, it is characterised in that: described remove impurity crucible (6)
Outer wall is provided with hook (7), hangs in growth crucible (8) by hook (7) by remove impurity crucible (6), it is to avoid to growth crucible (8)
Pressure cause growth crucible (8) crush.
GaSb crystal the most according to claim 1 growth knot screen, it is characterised in that: described knot screen (4)
Quartz material is all used to make.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620817387.4U CN205856650U (en) | 2016-08-01 | 2016-08-01 | GaSb crystal growth knot screen |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620817387.4U CN205856650U (en) | 2016-08-01 | 2016-08-01 | GaSb crystal growth knot screen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205856650U true CN205856650U (en) | 2017-01-04 |
Family
ID=57654214
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620817387.4U Withdrawn - After Issue CN205856650U (en) | 2016-08-01 | 2016-08-01 | GaSb crystal growth knot screen |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205856650U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106435710A (en) * | 2016-08-01 | 2017-02-22 | 中国电子科技集团公司第四十六研究所 | Impurity removing device used during growing of GaSb crystals |
-
2016
- 2016-08-01 CN CN201620817387.4U patent/CN205856650U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106435710A (en) * | 2016-08-01 | 2017-02-22 | 中国电子科技集团公司第四十六研究所 | Impurity removing device used during growing of GaSb crystals |
| CN106435710B (en) * | 2016-08-01 | 2018-09-11 | 中国电子科技集团公司第四十六研究所 | A kind of GaSb crystal growth exclusion device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20170104 Effective date of abandoning: 20180911 |