CN205752157U - Three electrical level power module that a kind of polar stack is drawn - Google Patents
Three electrical level power module that a kind of polar stack is drawn Download PDFInfo
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- CN205752157U CN205752157U CN201620387947.7U CN201620387947U CN205752157U CN 205752157 U CN205752157 U CN 205752157U CN 201620387947 U CN201620387947 U CN 201620387947U CN 205752157 U CN205752157 U CN 205752157U
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Abstract
The utility model discloses three electrical level power module that a kind of polar stack is drawn, including the multiple insulated substrates being in line, wherein left side half is lower half-bridge insulated substrate, and the right half is upper half-bridge insulated substrate；The upper right side of rightmost lower half-bridge insulated substrate is provided with negative electrode lead division, the bending to the left of negative electrode lead division also connects lower half-bridge insulated substrate by negative electrode main part, being provided with lower half-bridge target lead division on the right side of negative electrode lead division, lower half-bridge target lead division bending to the right also connects lower half-bridge insulated substrate by lower half-bridge target main part；The upper right side of leftmost upper half-bridge insulated substrate is provided with anelectrode lead division, the bending to the left of anelectrode lead division also connects upper half-bridge insulated substrate by anelectrode main part, being provided with half-bridge target lead division on the right side of anelectrode lead division, upper half-bridge target lead division bending to the right also connects upper half-bridge insulated substrate by upper half-bridge target main part.
Description
Technical field
This utility model relates to field of power electronics, particularly relates to three electrical level power module that a kind of polar stack is drawn.
Background technology
Power model is the power switch module that power electronic devices such as metal-oxide semiconductor (MOS) (power MOS pipe), insulated-gate type field effect transistor (IGBT), fast recovery diode (FRD) are packaged into by certain function combinations, and it is mainly used in power conversion under the various occasions such as electric automobile, photovoltaic generation, wind-power electricity generation, industry frequency conversion.
Power model of the prior art often stray inductance is relatively big, and power model loss is bigger.
Utility model content
Utility model purpose: the purpose of this utility model is to provide three electrical level power module that the polar stack of a kind of stray inductance that can reduce power model is drawn.
Technical scheme: for reaching this purpose, this utility model by the following technical solutions:
Three electrical level power module that polar stack described in the utility model is drawn, including the multiple insulated substrates being in line, wherein the insulated substrate of left side half quantity is lower half-bridge insulated substrate, and the insulated substrate of the right half quantity is upper half-bridge insulated substrate；The upper right side of rightmost lower half-bridge insulated substrate is provided with negative electrode lead division, the bending to the left of negative electrode lead division also connects lower half-bridge insulated substrate by negative electrode main part, being provided with lower half-bridge target lead division on the right side of negative electrode lead division, lower half-bridge target lead division bending to the right also connects lower half-bridge insulated substrate by lower half-bridge target main part；The upper right side of leftmost upper half-bridge insulated substrate is provided with anelectrode lead division, the bending to the left of anelectrode lead division also connects upper half-bridge insulated substrate by anelectrode main part, being provided with half-bridge target lead division on the right side of anelectrode lead division, upper half-bridge target lead division bending to the right also connects upper half-bridge insulated substrate by upper half-bridge target main part.
Further, described upper half-bridge target main part includes on first half-bridge target main part on half-bridge target main part and second, and anelectrode main part includes the first anelectrode main part and the second anelectrode main part；Negative electrode lead division extends negative electrode main part to the left, and negative electrode main part connects lower half-bridge insulated substrate；Lower half-bridge target lead division each extends over out half-bridge target main part on lower half-bridge target main part and first to left and right, lower half-bridge target main part connects lower half-bridge insulated substrate, on first, half-bridge target main part connects upper half-bridge insulated substrate and upper half-bridge target lead division, upper half-bridge target lead division extends the most to the right half-bridge target main part on second, and on second, half-bridge target main part connects upper half-bridge insulated substrate；Anelectrode lead division each extends over out the first anelectrode main part and the second anelectrode main part, the first anelectrode main part and the second anelectrode main part to left and right and connects upper half-bridge insulated substrate.
Further, described lower half-bridge insulated substrate is provided with negative electrode junction point and lower half-bridge target junction point, negative electrode junction point is arranged in column with lower half-bridge target junction point, upper half-bridge insulated substrate is provided with anelectrode junction point and upper half-bridge target junction point, and anelectrode junction point is arranged in column with upper half-bridge target junction point.
Further, described lower half-bridge insulated substrate is arranged over negative electrode large arm, and negative electrode forearm is drawn on the left of negative electrode large arm and/or right side, and negative electrode forearm connects negative electrode junction point, and negative electrode large arm connects negative electrode main part.
Further, described lower half-bridge insulated substrate is arranged over lower half-bridge target large arm, lower half-bridge target forearm is drawn on the left of lower half-bridge target large arm and/or right side, lower half-bridge target forearm connects lower half-bridge target junction point, and lower half-bridge target large arm connects lower half-bridge target main part.
Further, described upper half-bridge insulated substrate is arranged over anelectrode large arm, and anelectrode forearm is drawn on the left of anelectrode large arm and/or right side, and anelectrode forearm connects anelectrode junction point, and anelectrode large arm connects the first anelectrode main part or the second anelectrode main part.
Further, described upper half-bridge insulated substrate is arranged over half-bridge target large arm, upper half-bridge target forearm is drawn on the left of upper half-bridge target large arm and/or right side, upper half-bridge target forearm connects upper half-bridge target junction point, half-bridge target main part on half-bridge target main part and second in upper half-bridge target large arm connection first.
Further, described lower half-bridge insulated substrate is provided with lower half-bridge cells and lower half-bridge afterflow unit, the emitter stage of lower half-bridge cells or source electrode connect negative electrode junction point, during the conducting of lower half-bridge cells, electric current is circulated by lower half-bridge cells, when lower half-bridge cells turns off, electric current is circulated by lower half-bridge afterflow unit；Upper half-bridge insulated substrate is provided with half-bridge cells and upper half-bridge afterflow unit, the colelctor electrode of upper half-bridge cells or drain electrode connect anelectrode junction point, and during the conducting of upper half-bridge cells, electric current is circulated by upper half-bridge cells, when upper half-bridge cells turns off, electric current is circulated by upper half-bridge afterflow unit.
Further, one piece of lower half-bridge gate pole insulated substrate of all lower half-bridge units shareds, for connecting the gate pole of all lower half-bridge cells；The lower half-bridge afterflow gate insulation substrate of all lower half-bridge afterflow units shareds one piece, for connecting the gate pole of all lower half-bridge afterflow unit；On each lower half-bridge insulated substrate, distance between lower half-bridge target junction point and lower half-bridge afterflow gate insulation substrate is less than the distance between negative electrode junction point and lower half-bridge afterflow gate insulation substrate, and the distance between negative electrode junction point and lower half-bridge gate pole insulated substrate is less than the distance between lower half-bridge target junction point and lower half-bridge gate pole insulated substrate.
Further, all upper half-bridge units shareds one piece upper half-bridge gate pole insulated substrate, for connecting the gate pole of all upper half-bridge cells；The upper half-bridge afterflow gate insulation substrate of all upper half-bridge afterflow units shareds one piece, for connecting the gate pole of all upper half-bridge afterflow unit；On each upper half-bridge insulated substrate, distance between upper half-bridge target junction point and upper half-bridge afterflow gate insulation substrate is less than the distance between anelectrode junction point and upper half-bridge afterflow gate insulation substrate, and the distance between anelectrode junction point and upper half-bridge gate pole insulated substrate is less than the distance between upper half-bridge target junction point and upper half-bridge gate pole insulated substrate.
Beneficial effect: power model of the present utility model, by optimizing anelectrode, negative electrode, upper half-bridge target and the structure and layout of lower half-bridge target, can effectively reduce the stray inductance of power model, reduce power model loss, it is also possible to meet the requirement of power model more high workload frequency.
Accompanying drawing explanation
Fig. 1 is the axonometric chart of power model of the present utility model；
Fig. 2 is the top view of power model of the present utility model.
Detailed description of the invention
Below in conjunction with the accompanying drawings, the technical solution of the utility model is further elaborated.
The utility model discloses three electrical level power module that a kind of polar stack is drawn, as shown in Figure 1, including six insulated substrates being arranged in a line, wherein three, left side insulated substrate is lower half-bridge insulated substrate, it is respectively 1, second time half-bridge insulated substrate 2 of first time half-bridge insulated substrate and the 3rd time half-bridge insulated substrate 3, three insulated substrates in the right are upper half-bridge insulated substrate, half-bridge insulated substrate 6 on half-bridge insulated substrate 5 and the 3rd on half-bridge insulated substrate 4, second on respectively first.
As shown in Figure 2, first time half-bridge insulated substrate 1, second time half-bridge insulated substrate 2, 3rd time half-bridge insulated substrate 3, half-bridge insulated substrate 4 on first, the the first negative electrode junction point 15 arranged in column and first time half-bridge target junction point 16 it is respectively equipped with on half-bridge insulated substrate 5 and the 3rd in the right half area of half-bridge insulated substrate 6 on second, second negative electrode junction point 25 and second time half-bridge target junction point 26, 3rd negative electrode junction point 35 and the 3rd time half-bridge target junction point 36, half-bridge target junction point 46 on first anelectrode junction point 45 and first, half-bridge target junction point 56 on second anelectrode junction point 55 and second, and the 3rd half-bridge target junction point 66 on anelectrode junction point 65 and the 3rd.
In addition, second time half-bridge insulated substrate 2 is arranged over the first parallel large arm and the second large arm, draws the first forearm on the left of the first large arm, and the first forearm connects the first negative electrode junction point 15, drawing the second forearm on the left of second large arm, the second forearm connects first time half-bridge target junction point 16；3rd time half-bridge insulated substrate 3 is arranged over parallel the third-largest arm and the fourth-largest arm, the 3rd forearm is respectively drawn on the left of the third-largest arm and right side, 3rd forearm in left side connects the second negative electrode junction point 25,3rd forearm on right side connects the 3rd negative electrode junction point 35, the 4th forearm is respectively drawn on the left of the fourth-largest arm and right side, 4th forearm in left side connects second time half-bridge target junction point 26, and the 4th forearm on right side connects the 3rd time half-bridge target junction point 36.Wherein, first large arm and the third-largest arm are referred to as negative electrode large arm, first forearm and the 3rd forearm are referred to as negative electrode forearm, and the second large arm and the fourth-largest arm are referred to as lower half-bridge target large arm, and the second forearm and the 4th forearm are referred to as lower half-bridge target forearm.On second, half-bridge insulated substrate 5 is arranged over parallel the fifth-largest arm and the sixth-largest arm, the 5th forearm is respectively drawn on the left of the fifth-largest arm and right side, 5th forearm in left side connects the first anelectrode junction point 45,5th forearm on right side connects the second anelectrode junction point 55, the 6th forearm is respectively drawn on the left of the sixth-largest arm and right side, 6th forearm in left side connects half-bridge target junction point 46 on first, and the 6th forearm on right side connects half-bridge target junction point 56 on second；On 3rd, half-bridge insulated substrate 6 is arranged over parallel the seventh-largest arm and the eighth-largest arm, the 7th forearm is drawn on the right side of the seventh-largest arm, 7th forearm connects the 3rd anelectrode junction point 65, draws the 8th forearm on the right side of the eighth-largest arm, and the 8th forearm connects half-bridge target junction point 66 on the 3rd.Wherein, the fifth-largest arm and the seventh-largest arm are referred to as anelectrode large arm, 5th forearm and the 7th forearm are referred to as anelectrode forearm, the sixth-largest arm and the eighth-largest arm and are referred to as half-bridge target large arm, and the 6th forearm and the 8th forearm are referred to as half-bridge target forearm.
The upper right side of the 3rd time half-bridge insulated substrate 3 is provided with negative electrode lead division 7, negative electrode lead division 7 bending to the left also connects the first large arm and the third-largest arm by negative electrode main part 71, being provided with lower half-bridge target lead division 8 on the right side of negative electrode lead division 7, the bending to the right of lower half-bridge target lead division 8 also connects the second large arm and the fourth-largest arm by lower half-bridge target main part 81.On first, the upper right side of half-bridge insulated substrate 4 is provided with anelectrode lead division 9, anelectrode lead division 9 bending to the left also each extends over out the first anelectrode main part 91 and the second anelectrode main part 92 to left and right, first anelectrode main part 91 connects the fifth-largest arm, and the second anelectrode main part 92 connects the seventh-largest arm.Half-bridge target lead division 10 it is provided with on the right side of anelectrode lead division 9, the bending to the right of upper half-bridge target lead division 10 also each extends over out on first half-bridge target main part 83 on half-bridge target main part 82 and second to left and right, on first, half-bridge target main part 82 connects the sixth-largest arm, and on second, half-bridge target main part 83 connects the eighth-largest arm.As can be seen here, all electrode body portions constitute the shape of " a few word ", as shown in Figure 1.
In addition, lower half-bridge insulated substrate is provided with lower half-bridge cells and lower half-bridge afterflow unit, the emitter stage of lower half-bridge cells or source electrode connect negative electrode junction point, during the conducting of lower half-bridge cells, electric current is circulated by lower half-bridge cells, when lower half-bridge cells turns off, electric current is circulated by lower half-bridge afterflow unit；Upper half-bridge insulated substrate is provided with half-bridge cells and upper half-bridge afterflow unit, the colelctor electrode of upper half-bridge cells or drain electrode connect anelectrode junction point, and during the conducting of upper half-bridge cells, electric current is circulated by upper half-bridge cells, when upper half-bridge cells turns off, electric current is circulated by upper half-bridge afterflow unit.Fig. 2 marked the lower half-bridge cells on first time half-bridge insulated substrate 1 and lower half-bridge afterflow unit, namely first time half-bridge cells 17 and first time half-bridge afterflow unit 18；The upper half-bridge cells also marked on first on half-bridge insulated substrate 4 and upper half-bridge afterflow unit, namely half-bridge afterflow unit 48 on half-bridge cells 47 and first on first.
As in figure 2 it is shown, one piece of lower half-bridge gate pole insulated substrate 213 of all lower half-bridge units shareds, for connecting the gate pole of all lower half-bridge cells；The lower half-bridge afterflow gate insulation substrate 321 of all lower half-bridge afterflow units shareds one piece, for connecting the gate pole of all lower half-bridge afterflow unit；On each lower half-bridge insulated substrate, distance between lower half-bridge target junction point and lower half-bridge afterflow gate insulation substrate 321 is less than the distance between negative electrode junction point and lower half-bridge afterflow gate insulation substrate 321, and the distance between negative electrode junction point and lower half-bridge gate pole insulated substrate 213 is less than the distance between lower half-bridge target junction point and lower half-bridge gate pole insulated substrate.As it is shown in figure 1, all upper half-bridge units shareds one piece upper half-bridge gate pole insulated substrate 546, for connecting the gate pole of all upper half-bridge cells；The upper half-bridge afterflow gate insulation substrate 654 of all upper half-bridge afterflow units shareds one piece, for connecting the gate pole of all upper half-bridge afterflow unit；On each upper half-bridge insulated substrate, distance between upper half-bridge target junction point and upper half-bridge afterflow gate insulation substrate 654 is less than the distance between anelectrode junction point and upper half-bridge afterflow gate insulation substrate 654, and the distance between anelectrode junction point and upper half-bridge gate pole insulated substrate 546 is less than the distance between upper half-bridge target junction point and upper half-bridge gate pole insulated substrate 546.
Claims (10)
1. three electrical level power module that a polar stack is drawn, it is characterised in that: include the multiple insulation being in line
Substrate, wherein the insulated substrate of left side half quantity is lower half-bridge insulated substrate, and the insulated substrate of the right half quantity is upper
Half-bridge insulated substrate；The upper right side of rightmost lower half-bridge insulated substrate is provided with negative electrode lead division (7), and negative electrode is drawn
Portion (7) bending to the left also connects lower half-bridge insulated substrate, negative electrode lead division (7) by negative electrode main part (71)
Right side is provided with lower half-bridge target lead division (8), lower half-bridge target lead division (8) bending to the right under passing through
Half-bridge target main part (81) connects lower half-bridge insulated substrate；The upper right side of leftmost upper half-bridge insulated substrate sets
Having anelectrode lead division (9), anelectrode lead division (9) bending to the left is the most exhausted by the upper half-bridge of anelectrode main part connection
Edge substrate, anelectrode lead division (9) right side is provided with half-bridge target lead division (10), and upper half-bridge target draws
Go out portion (10) bending to the right and connect upper half-bridge insulated substrate by upper half-bridge target main part.
Three electrical level power module that polar stack the most according to claim 1 is drawn, it is characterised in that: on described
Half-bridge target main part includes on first half-bridge target main body on half-bridge target main part (82) and second
Portion (83), anelectrode main part includes the first anelectrode main part (91) and the second anelectrode main part (92)；Negative electricity
Pole lead division (7) extends negative electrode main part (71) to the left, and negative electrode main part (71) connects lower half-bridge insulation base
Plate；Lower half-bridge target lead division (8) each extend over out to left and right lower half-bridge target main part (81) and
Half-bridge target main part (82) on first, lower half-bridge target main part (81) connects lower half-bridge insulated substrate,
Half-bridge insulated substrate and upper half-bridge target lead division (10) in half-bridge target main part (82) connection on first,
Upper half-bridge target lead division (10) extends the most to the right half-bridge target main part (83) on second, on second
Half-bridge insulated substrate in half-bridge target main part (83) connection；Anelectrode lead division (9) prolongs the most respectively
Stretch out the first anelectrode main part (91) and the second anelectrode main part (92), the first anelectrode main part (91) and
Half-bridge insulated substrate in second anelectrode main part (92) connection.
Three electrical level power module that polar stack the most according to claim 1 is drawn, it is characterised in that: under described
Half-bridge insulated substrate is provided with in negative electrode junction point and lower half-bridge target junction point, negative electrode junction point and lower half-bridge
Between electrode connection points arrange in column, upper half-bridge insulated substrate is provided with anelectrode junction point and upper half-bridge target junction point,
Anelectrode junction point is arranged in column with upper half-bridge target junction point.
Three electrical level power module that polar stack the most according to claim 3 is drawn, it is characterised in that: under described
Half-bridge insulated substrate is arranged over negative electrode large arm, and negative electrode forearm, negative electrode are drawn on the left of negative electrode large arm and/or right side
Forearm connects negative electrode junction point, and negative electrode large arm connects negative electrode main part.
Three electrical level power module that polar stack the most according to claim 3 is drawn, it is characterised in that: under described
Half-bridge insulated substrate is arranged over lower half-bridge target large arm, under on the left of lower half-bridge target large arm and/or right side is drawn
Half-bridge target forearm, lower half-bridge target forearm connects lower half-bridge target junction point, lower half-bridge target
Large arm connects lower half-bridge target main part (81).
Three electrical level power module that polar stack the most according to claim 3 is drawn, it is characterised in that: on described
Half-bridge insulated substrate is arranged over anelectrode large arm, and anelectrode forearm, anelectrode are drawn on the left of anelectrode large arm and/or right side
Forearm connects anelectrode junction point, and anelectrode large arm connects the first anelectrode main part (91) or the second anelectrode main part
(92)。
Three electrical level power module that polar stack the most according to claim 3 is drawn, it is characterised in that: on described
Half-bridge insulated substrate is arranged over half-bridge target large arm, in the extraction of on the left of upper half-bridge target large arm and/or right side
Half-bridge target forearm, upper half-bridge target forearm connects upper half-bridge target junction point, upper half-bridge target
Half-bridge target main part (83) on half-bridge target main part (82) and second in large arm connection first.
Three electrical level power module that polar stack the most according to claim 1 is drawn, it is characterised in that: under described
Half-bridge insulated substrate is provided with lower half-bridge cells and lower half-bridge afterflow unit, the emitter stage of lower half-bridge cells or source electrode and connects negative
Electrode connection points, during the conducting of lower half-bridge cells, electric current is circulated by lower half-bridge cells, when lower half-bridge cells turns off,
Electric current is circulated by lower half-bridge afterflow unit；Upper half-bridge insulated substrate is provided with half-bridge cells and upper half-bridge afterflow list
Unit, the colelctor electrode of upper half-bridge cells or drain electrode connection anelectrode junction point, during the conducting of upper half-bridge cells, electric current passes through upper half
Bridge unit circulates, and when upper half-bridge cells turns off, electric current is circulated by upper half-bridge afterflow unit.
Three electrical level power module that polar stack the most according to claim 8 is drawn, it is characterised in that: under all
Half-bridge cells shares one piece of lower half-bridge gate pole insulated substrate (213), for connecting the gate pole of all lower half-bridge cells；All
Lower half-bridge afterflow gate insulation substrate (321) of lower half-bridge afterflow units shared one piece, is used for connecting all lower half-bridge afterflow lists
The gate pole of unit；On each lower half-bridge insulated substrate, lower half-bridge target junction point and lower half-bridge afterflow gate insulation substrate
(321) distance between is less than the distance between negative electrode junction point and lower half-bridge afterflow gate insulation substrate (321),
Distance between negative electrode junction point and lower half-bridge gate pole insulated substrate (213) less than lower half-bridge target junction point with
Distance between the insulated substrate of lower half-bridge gate pole.
Three electrical level power module that polar stack the most according to claim 8 is drawn, it is characterised in that: on all
Half-bridge cells shares one piece of upper half-bridge gate pole insulated substrate (546), for connecting the gate pole of all upper half-bridge cells；All
Upper half-bridge afterflow gate insulation substrate (654) of upper half-bridge afterflow units shared one piece, is used for connecting all upper half-bridge afterflow lists
The gate pole of unit；On each upper half-bridge insulated substrate, upper half-bridge target junction point and upper half-bridge afterflow gate insulation substrate
(654) distance between is less than the distance between anelectrode junction point and upper half-bridge afterflow gate insulation substrate (654),
Distance between anelectrode junction point and upper half-bridge gate pole insulated substrate (546) less than upper half-bridge target junction point with
Distance between upper half-bridge gate pole insulated substrate (546).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620387947.7U CN205752157U (en) | 2016-05-03 | 2016-05-03 | Three electrical level power module that a kind of polar stack is drawn |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620387947.7U CN205752157U (en) | 2016-05-03 | 2016-05-03 | Three electrical level power module that a kind of polar stack is drawn |
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| Publication Number | Publication Date |
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| CN205752157U true CN205752157U (en) | 2016-11-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620387947.7U Withdrawn - After Issue CN205752157U (en) | 2016-05-03 | 2016-05-03 | Three electrical level power module that a kind of polar stack is drawn |
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| CN (1) | CN205752157U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105810658A (en) * | 2016-05-03 | 2016-07-27 | 扬州国扬电子有限公司 | Three-level power module led out from electrode stack |
-
2016
- 2016-05-03 CN CN201620387947.7U patent/CN205752157U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105810658A (en) * | 2016-05-03 | 2016-07-27 | 扬州国扬电子有限公司 | Three-level power module led out from electrode stack |
| CN105810658B (en) * | 2016-05-03 | 2018-07-20 | 扬州国扬电子有限公司 | A kind of three electrical level power modules that polar stack is drawn |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20161130 Effective date of abandoning: 20180720 |