CN205428950U

CN205428950U - High pressure rectifier diode chip

Info

Publication number: CN205428950U
Application number: CN201620192024.6U
Authority: CN
Inventors: 那雪梅; 王成森; 张超; 姜瑞
Original assignee: JIANGSU JIEJIE MICROELECTRONICS CO Ltd
Current assignee: JIEJIE SEMICONDUCTOR Co.,Ltd.
Priority date: 2016-03-14
Filing date: 2016-03-14
Publication date: 2016-08-03
Anticipated expiration: 2026-03-14

Abstract

The utility model discloses a high pressure rectifier diode chip, is this chip at P be equipped with the passivation slot around the type anode region, the passivation slot extends to N type substrate, is the internal surface of passivation slot equipped with glass passive film, P is the front of type anode region equipped with siO2 membrane and positive pole metal electrode, positive pole metal electrode and P be equipped with P+ type anode region between the type anode region, leave the interval between P+ type anode region and the passivation slot. This chip is through setting up certain interval between P+ type anode region and passivation slot, is the barrier layer that makes PN junction termination all the time at P the type anode region ensures that surperficial electric field is unanimous with internal electric field strength to make the barrier layer have bigger extension space, the most emergences of reverse breakdown puncture in vivo, have effectively improved reverse breakdown voltage, this chip simple structure simultaneously, low in manufacturing cost has effectively improved the manufacturing efficiency and the quality of chip.

Description

A kind of kenotron chip

Technical field

The utility model belongs to rectifier diode chip technical field, is specifically related to a kind of kenotron chip.

Background technology

At present, the manufacture difficulty of the kenotron chip more than 2000V is relatively big, owing to high voltage requires that it has bigger space charge layer extending space and the surface field intensity than relatively low PN junction terminal.And the diffusion layer of dense boron has had a strong impact on the extension of space-charge region in the commutation diode technique of routine, puncture and preferentially occur on surface, so that the breakdown voltage ratio of diode is the most on the low side.As reached high breakdown reverse voltage, can only be realized by the degree of depth increasing the resistivity of substrate, the thickness of silicon chip and passivation groove, but the fragment rate of manufacturing cost and silicon chip also can increase therewith.

Utility model content

Technical problem to be solved in the utility model is to provide a kind of simple in construction, low cost of manufacture, and has the rectifier diode chip of high breakdown reverse voltage.

For solving above-mentioned technical problem, the technical solution adopted in the utility model is:

A kind of kenotron chip, including N-type substrate, the back side of N-type substrate is provided with N⁺Type cathodic region, N⁺The back side in type cathodic region is provided with cathodic metal electrode, and the front of N-type substrate is provided with P^-Type anode region, P^-Type anode region be formed around being passivated groove, passivation groove extends to N-type substrate, and the inner surface of passivation groove is provided with glassivation film, P^-The front of type anode region is provided with SiO₂Film and anode metal electrodes, anode metal electrodes and P^-Type is provided with P between anode region⁺Type anode region, P⁺Spacing is left between type anode region and passivation groove.

Further, described P⁺Spacing between type anode region and passivation groove is 20-50 μm.

Further, described P⁺The junction depth of type anode region is 5-50 μm.

Compared with prior art, the utility model has the advantages that: chip of the present utility model is by P⁺Between type anode region and passivation groove, certain spacing is set, makes the depletion layer of PN junction terminal all the time at P^-Type anode region, it is ensured that surface field is consistent with internal electric-field intensity, so that depletion layer has bigger extending space, reverse breakdown majority occurs to puncture in vivo, is effectively increased breakdown reverse voltage；This chip structure is simple simultaneously, and low cost of manufacture is effectively increased manufacture efficiency and the quality of chip.

Accompanying drawing explanation

With detailed description of the invention, the utility model is described in further detail below in conjunction with the accompanying drawings.

Fig. 1 is structural representation of the present utility model；

Fig. 2 is the expander graphs of the utility model PN junction reverse-biased time space charged region.

Wherein, 1, anode metal electrodes, 2, SiO₂Film, 3, P⁺Type anode region, 4, P^-Type anode region, 5, glassivation film, 6, N-type substrate, 7, N⁺Type cathodic region, 8, cathodic metal electrode, 9, passivation groove.

Detailed description of the invention:

As it is shown in figure 1, a kind of kenotron chip, including N-type substrate 6, the back side of N-type substrate 6 is provided with N⁺Type cathodic region 7, N⁺The back side in type cathodic region 7 is provided with cathodic metal electrode 8, and the front of N-type substrate 6 is provided with P^-Type anode region 4, P^-Type anode region 4 be formed around being passivated groove 9, passivation groove 9 extends to N-type substrate 6, and the inner surface of passivation groove 9 is provided with glassivation film 5, P^-The front of type anode region 4 is provided with SiO₂Film 2 and anode metal electrodes 1, anode metal electrodes 1 and P^-It is provided with P between type anode region 4⁺Type anode region 3, P⁺The spacing of 20-50 μm, P is left between type anode region 3 and passivation groove 9⁺The junction depth of type anode region 3 is 5-50 μm.

As in figure 2 it is shown, due to P⁺Type anode region 3 is positioned at P^-The central upper portion position of type anode region 4, and and passivation groove 9 between there is spacing, when the depletion layer (dotted portion in figure) of PN junction terminal is bent upwards on surface, owing to the top of PN junction terminal does not has P+ diffusion layer, this depletion layer is all the time at P^-In type anode region 4, it is ensured that surface field and the uniformity of internal electric-field intensity, and along with the increase of backward voltage, surface extends with internal PN depletion layer simultaneously, until PN junction punctures in vivo, thus is effectively increased the breakdown reverse voltage of chip.

Claims

1. a kenotron chip, including N-type substrate, the back side of described N-type substrate is provided with N⁺Type cathodic region, described N⁺The back side in type cathodic region is provided with cathodic metal electrode, and the front of described N-type substrate is provided with P^-Type anode region, it is characterised in that: described P^-Type anode region be formed around be passivated groove, described passivation groove extends to N-type substrate, and the inner surface of described passivation groove is provided with glassivation film, described P^-The front of type anode region is provided with SiO₂Film and anode metal electrodes, described anode metal electrodes and P^-Type is provided with P between anode region⁺Type anode region, described P⁺Spacing is left between type anode region and passivation groove.

A kind of kenotron chip the most according to claim 1, it is characterised in that: described P⁺Spacing between type anode region and passivation groove is 20-50 μm.

A kind of kenotron chip the most according to claim 1 and 2, it is characterised in that: described P⁺The junction depth of type anode region is 5-50 μm.