CN204464290U - Improve the diode structure recovering tolerance - Google Patents
Improve the diode structure recovering tolerance Download PDFInfo
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- CN204464290U CN204464290U CN201520133815.7U CN201520133815U CN204464290U CN 204464290 U CN204464290 U CN 204464290U CN 201520133815 U CN201520133815 U CN 201520133815U CN 204464290 U CN204464290 U CN 204464290U
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Abstract
The utility model relates to a kind of diode structure, and especially a kind of diode structure improving recovery tolerance, belongs to the technical field of semiconductor diode.According to the technical scheme that the utility model provides, described improvement recovers the diode structure of tolerance, comprises semiconductor substrate, comprises the P conductive region for the formation of PN junction and N conductive region in described semiconductor substrate; N conductive region and the cathodic metal ohmic contact being positioned at semiconductor-based back; Some P+ regions are provided with, described P+ region and cathodic metal ohmic contact in N conductive region.The utility model arranges P+ region in N conductive region, when there being multiple P+ region, adjacent P+ region is spaced apart, and the thickness of horizontal range between P+ region and semiconductor substrate is suitable, thus effectively improve recovery tolerance under not increasing anode hole concentration, and can dynamic loss be suppressed to greatest extent to increase, safe and reliable.
Description
Technical field
The utility model relates to a kind of diode structure, and especially a kind of diode structure improving recovery tolerance, belongs to the technical field of semiconductor diode.
Background technology
As shown in Figure 1, for the structure of existing diode, comprise the P conductive region 2 for the formation of PN junction and N conductive region 3, P conductive region 2 is connected with N conductive region 3, P conductive region 2 arranges anode metal 1, N conductive region 3 arranges cathodic metal 4, anode metal 1 and P conductive region 2 ohmic contact, cathodic metal 4 and N conductive region 3 ohmic contact.Operationally, apply voltage by anode metal 1 and cathodic metal 4, to form the PN junction of forward conduction, but there is the larger shortcoming of dynamic loss in existing diode structure.At present, improved recovery (recovery) tolerance of diode by the hole concentration increasing anode, but the dynamic loss of diode can be increased after increasing anode hole concentration.
Summary of the invention
The purpose of this utility model overcomes the deficiencies in the prior art, there is provided a kind of and improve the diode structure recovering tolerance, its compact conformation, do not increasing effective improvement recovery tolerance under anode hole concentration, and can dynamic loss be suppressed to greatest extent to increase, safe and reliable.
According to the technical scheme that the utility model provides, described improvement recovers the diode structure of tolerance, comprises semiconductor substrate, comprises the P conductive region for the formation of PN junction and N conductive region in described semiconductor substrate; N conductive region and the cathodic metal ohmic contact being positioned at semiconductor-based back; Some P+ regions are provided with, described P+ region and cathodic metal ohmic contact in N conductive region.
Described semiconductor substrate comprises silicon substrate, arranges the anode metal be used for P conductive region ohmic contact in the front of semiconductor substrate.
Distance in N conductive region between adjacent P+ region is consistent with the thickness of semiconductor substrate, and the extension degree of depth of P+ region in N conductive region is less than 2 μm, and the width in P+ region is 0.5 μm ~ 120 μm.
Advantage of the present utility model: P+ region is set in N conductive region, when there being multiple P+ region, adjacent P+ region is spaced apart, and the thickness of horizontal range between P+ region and semiconductor substrate is suitable, thus effectively improve recovery tolerance under not increasing anode hole concentration, and can dynamic loss be suppressed to greatest extent to increase, safe and reliable.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of existing diode.
Fig. 2 is structural representation of the present utility model.
Fig. 3 is the change schematic diagram of the recovery tolerance of the utility model diode.
Description of reference numerals: 1-anode metal, 2-P conductive region, 3-N conductive region, 4-cathodic metal and 5-P+ region.
Embodiment
Below in conjunction with concrete drawings and Examples, the utility model is described in further detail.
As shown in Figure 2: in order to not increase effective improvement recovery tolerance under anode hole concentration, and can dynamic loss be suppressed to greatest extent to increase, the utility model comprises semiconductor substrate, comprises the P conductive region 2 for the formation of PN junction and N conductive region 3 in described semiconductor substrate; N conductive region 3 and cathodic metal 4 ohmic contact being positioned at semiconductor-based back; Some P+ regions 5 are provided with, described P+ region 5 and cathodic metal 4 ohmic contact in N conductive region 3.
Described semiconductor substrate comprises silicon substrate, arranges the anode metal 1 be used for P conductive region 2 ohmic contact in the front of semiconductor substrate.
Particularly, the material of semiconductor substrate can be silicon, and can be also other conventional materials, the upper surface of P conductive region 2 forms the front of semiconductor substrate, and the lower surface of N conductive region 3 forms the back side of semiconductor substrate.The concentration range that the doping content of N conductive region 3 and the doping content of P conductive region 2 all can adopt the art conventional, known by the art personnel, repeats no more herein.In the specific implementation, can by carrying out the injection of P conductive type impurity ion at the back side of semiconductor substrate, to form some P+ regions 5 in semiconductor substrate.
In the utility model embodiment, after P+ region 5 is set in N conductive region 3, can avoid excessive due to the very few dv/dt of causing in hole and the tolerance that causes declines by injected hole at Restoration stage.In addition, can not injected hole in the early stage of Restoration stage, effectively can suppress the increase of Irp, namely reach and prevent tolerance from declining, farthest can suppress again the increase of dynamic loss.
In the specific implementation, the distance in N conductive region 3 between adjacent P+ region 5 is consistent with the thickness of semiconductor substrate, and the extension degree of depth of P+ region 5 in N conductive region 2 is less than 2 μm, and the width in P+ region 5 is 0.5 μm ~ 120 μm.Namely the P+ region 5 running through described N conductive region 3 can not be formed in N conductive region 3, when there being multiple P+ region 5, adjacent P+ region 5 is in spaced apart, and the thickness of horizontal range between adjacent P+ region 5 and semiconductor substrate is suitable, the doping content in P+ region 5 is corresponding with the recovery tolerance forming diode, specifically can select as required, repeat no more herein.As shown in Figure 3, the concentration showing P+ region 5 is different, and the change schematic diagram of the recovery tolerance of diode, effectively can improve the recovery tolerance of diode.
Claims (3)
1. improve the diode structure recovering tolerance, comprise semiconductor substrate, in described semiconductor substrate, comprise the P conductive region (2) for the formation of PN junction and N conductive region (3); N conductive region (3) and cathodic metal (4) ohmic contact being positioned at semiconductor-based back; It is characterized in that: in N conductive region (3), be provided with some P+ regions (5), described P+ region (5) and cathodic metal (4) ohmic contact.
2. the diode structure improving recovery tolerance according to claim 1, is characterized in that: described semiconductor substrate comprises silicon substrate, arranges the anode metal (1) be used for P conductive region (2) ohmic contact in the front of semiconductor substrate.
3. the diode structure improving recovery tolerance according to claim 1, it is characterized in that: the distance in N conductive region (3) between adjacent P+ region (5) is consistent with the thickness of semiconductor substrate, the extension degree of depth of P+ region (5) in N conductive region (2) is less than 2 μm, and the width of P+ region (5) is 0.5 μm ~ 120 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520133815.7U CN204464290U (en) | 2015-03-09 | 2015-03-09 | Improve the diode structure recovering tolerance |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520133815.7U CN204464290U (en) | 2015-03-09 | 2015-03-09 | Improve the diode structure recovering tolerance |
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| CN204464290U true CN204464290U (en) | 2015-07-08 |
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| CN201520133815.7U Active CN204464290U (en) | 2015-03-09 | 2015-03-09 | Improve the diode structure recovering tolerance |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104659081A (en) * | 2015-03-09 | 2015-05-27 | 江苏中科君芯科技有限公司 | Diode structure for improving and recovering tolerant dosage |
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2015
- 2015-03-09 CN CN201520133815.7U patent/CN204464290U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104659081A (en) * | 2015-03-09 | 2015-05-27 | 江苏中科君芯科技有限公司 | Diode structure for improving and recovering tolerant dosage |
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