CN204481031U - Reduce the diode structure that anode hole injects - Google Patents
Reduce the diode structure that anode hole injects Download PDFInfo
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- CN204481031U CN204481031U CN201520132938.9U CN201520132938U CN204481031U CN 204481031 U CN204481031 U CN 204481031U CN 201520132938 U CN201520132938 U CN 201520132938U CN 204481031 U CN204481031 U CN 204481031U
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Abstract
The utility model relates to a kind of diode structure, and especially a kind of diode structure reducing anode hole and inject, belongs to the technical field of semiconductor diode.According to the technical scheme that the utility model provides, the diode structure that described reduction anode hole injects, comprises semiconductor substrate, comprises the P conductive region for the formation of PN junction and N conductive region in described semiconductor substrate; The N+ region that doping content is greater than N conductive region is provided with between described P conductive region and N conductive region.The utility model by arranging N+ region between P conductive region and N conductive region, the doping content in N+ region is greater than the doping content of N conductive region, by the combination in hole in N+ region and P conductive region, reduce the hole injection fluence entered in N conductive region, thus effectively can reduce the dynamic loss of diode, compact conformation, safe and reliable.
Description
Technical field
The utility model relates to a kind of diode structure, and especially a kind of diode structure reducing anode hole and inject, belongs to the technical field of semiconductor diode.
Background technology
As shown in Figure 1, for the structure of existing diode, comprise the P conductive region 2 for the formation of PN junction and N conductive region 3, P conductive region 2 is connected with N conductive region 3, P conductive region 2 arranges anode metal 1, N conductive region 3 arranges cathodic metal 4, anode metal 1 and P conductive region 2 ohmic contact, cathodic metal 4 and N conductive region 3 ohmic contact.Operationally, apply voltage by anode metal 1 and cathodic metal 4, to form the PN junction of forward conduction, but there is the larger shortcoming of dynamic loss in existing diode structure.At present, in order to reduce the dynamic loss of diode, can reduce the wastage by the concentration of reduction P conductive region 2 or by importing life control (heavy metal or electric wire radiation), but the concentration reducing P conductive region 2 can cause contact resistance to become greatly, and then cause loss to increase; And when being reduced the wastage by importing life control, easily cause electric leakage significantly to increase.Therefore, the dynamic loss how lowering diode is a current difficult problem.
Summary of the invention
The purpose of this utility model overcomes the deficiencies in the prior art, provides a kind of diode structure reducing anode hole and inject, its compact conformation, injects the dynamic loss that effectively can reduce diode by reducing anode hole, safe and reliable.
According to the technical scheme that the utility model provides, the diode structure that described reduction anode hole injects, comprises semiconductor substrate, comprises the P conductive region for the formation of PN junction and N conductive region in described semiconductor substrate; The N+ region that doping content is greater than N conductive region is provided with between described P conductive region and N conductive region.
Described semiconductor substrate comprises silicon substrate, arranges the anode metal be used for P conductive region ohmic contact in the front of semiconductor substrate, arranges the cathodic metal be used for N conductive region ohmic contact at the back side of semiconductor substrate.
The doping content in described N+ region is 1E15cm-3 ~ 1E17cm-3.
Advantage of the present utility model: by arranging N+ region between P conductive region and N conductive region, the doping content in N+ region is greater than the doping content of N conductive region, by the combination in hole in N+ region and P conductive region, reduce the hole injection fluence entered in N conductive region, thus effectively can reduce the dynamic loss of diode, compact conformation, safe and reliable.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of existing diode.
Fig. 2 is structural representation of the present utility model.
Fig. 3 is the quiescent dissipation of the utility model diode and the change schematic diagram of dynamic loss.
Description of reference numerals: 1-anode metal, 2-P conductive region, 3-N conductive region, 4-cathodic metal and 5-N+ region.
Embodiment
Below in conjunction with concrete drawings and Examples, the utility model is described in further detail.
As shown in Figure 2: in order to inject the dynamic loss that effectively can reduce diode by reducing anode hole, the utility model comprises semiconductor substrate, comprises the P conductive region 2 for the formation of PN junction and N conductive region 3 in described semiconductor substrate; The N+ region 5 that doping content is greater than N conductive region 3 is provided with between described P conductive region 2 and N conductive region 3.
Described semiconductor substrate comprises silicon substrate, arranges the anode metal 1 be used for P conductive region 2 ohmic contact in the front of semiconductor substrate, arranges the cathodic metal 4 be used for N conductive region 3 ohmic contact at the back side of semiconductor substrate.
Particularly, the material of semiconductor substrate can be silicon, and the upper surface of P conductive region 2 forms the front of semiconductor substrate, and the lower surface of N conductive region 3 forms the back side of semiconductor substrate.The doping content in N+ region 5 is greater than the concentration of N conductive region 3, the concentration range that the doping content of N conductive region 3 and the doping content of P conductive region 2 all can adopt the art conventional, known by the art personnel, repeats no more herein.In the specific implementation, can by carrying out the injection of N conductive type impurity ion in the front of semiconductor substrate or the back side, to form N+ region 5 in semiconductor substrate.
In the utility model embodiment, the doping content in described N+ region 5 is 1E15cm-3 ~ 1E17cm-3, the anode of diode is formed after anode metal 1 and P conductive region 2 ohmic contact, after the hole of P conductive region 2 is injected, by the N+ region 5 between P conductive region 2 and N conductive region 3, thus can when not reducing P conductive region 2 doping content, the hole effectively reducing anode is injected, and lowers dynamic loss.In addition, N+ region 5 is within the scope of above-mentioned doping content, and doping content is higher, higher from the Percentage bound in anode injected holes and N+ region 5, and the anode hole injection rate entered in N conductive region 3 also can be fewer, thus reduces dynamic loss.As shown in Figure 3, for the doping content of N+ region 5 below P conductive region 2 different time, the quiescent dissipation of diode and the change of dynamic loss.
Claims (2)
1. reduce the diode structure that anode hole injects, comprise semiconductor substrate, in described semiconductor substrate, comprise the P conductive region (2) for the formation of PN junction and N conductive region (3); It is characterized in that: between described P conductive region (2) and N conductive region (3), be provided with the N+ region (5) that doping content is greater than N conductive region (3).
2. the diode structure of reduction anode hole injection according to claim 1, it is characterized in that: described semiconductor substrate comprises silicon substrate, the anode metal (1) be used for P conductive region (2) ohmic contact is set in the front of semiconductor substrate, the cathodic metal (4) be used for N conductive region (3) ohmic contact is set at the back side of semiconductor substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520132938.9U CN204481031U (en) | 2015-03-09 | 2015-03-09 | Reduce the diode structure that anode hole injects |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520132938.9U CN204481031U (en) | 2015-03-09 | 2015-03-09 | Reduce the diode structure that anode hole injects |
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| Publication Number | Publication Date |
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| CN204481031U true CN204481031U (en) | 2015-07-15 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201520132938.9U Active CN204481031U (en) | 2015-03-09 | 2015-03-09 | Reduce the diode structure that anode hole injects |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104681635A (en) * | 2015-03-09 | 2015-06-03 | 江苏中科君芯科技有限公司 | Diode structure for reducing anode hole injection |
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2015
- 2015-03-09 CN CN201520132938.9U patent/CN204481031U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104681635A (en) * | 2015-03-09 | 2015-06-03 | 江苏中科君芯科技有限公司 | Diode structure for reducing anode hole injection |
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