CN202772138U

CN202772138U - Improved silicon controlled structure

Info

Publication number: CN202772138U
Application number: CN 201220348436
Authority: CN
Inventors: 耿开远; 周建; 朱法扬
Original assignee: QIDONG JILAI ELECTRONIC CO Ltd
Current assignee: QIDONG JILAI ELECTRONIC CO Ltd
Priority date: 2012-07-18
Filing date: 2012-07-18
Publication date: 2013-03-06
Anticipated expiration: 2022-07-18

Abstract

The utility model discloses an improved silicon controlled structure, which comprises a mesa recess, a through ring, a long base region, a front short base region, a back short base region, a cathode region and a gate pole region. The improved silicon controlled structure is characterized in that: a cathode and gate pole slot is formed between the cathode region and the gate pole region; and the cathode and gate pole slot is filled with glass powder. The improved silicon controlled structure has the advantages of high pressure resistance, low electric leakage, no existence of transoid condition and surface burning appearance, and much higher reliability of the controlled silicon.

Description

A kind of improved SCR structure

Technical field

The utility model relates to a kind of improved SCR structure, belongs to the controllable silicon production field.

Background technology

But in the regulatory control production process, negative electrode and gate pole be all by protect oxide layer, adopts protect oxide layer, has following shortcoming: 1, oxide layer is vulnerable to the foreign ion impact and causes between negative electrode, gate pole electric leakage large, component failure; 2, surface concentration is lighter, and the surface easily forms transoid, makes easily component failure; 3, between negative electrode and the gate pole because work the time exists operating current and voltage, easily causing herein in the use procedure, PN junction burns component failure.Therefore, should provide a kind of new technical scheme to address the above problem.

The utility model content

The purpose of this utility model provides a kind of surface without the improved SCR structure of burning, reliability is high.

For achieving the above object, the technical solution adopted in the utility model is:

A kind of improved SCR structure, comprise mesa recess, break-through ring, growing base area, positive short base, the back side short base, cathodic region and gate pole district, described break-through be located on growing base area around, have groove between the negative electrode gate pole between described cathodic region and the gate pole district, be filled with glass dust in the groove between described negative electrode gate pole.

The utility model has the advantages that: between cathodic region and gate pole district, have a groove, and in groove, fill the high purity glass powder, the withstand voltage height of glass dust, it is low to leak electricity, and does not also have transoid condition and burnt surface phenomenon, has greatly improved the silicon controlled reliability.

Description of drawings

Below in conjunction with the drawings and specific embodiments the utility model is described in further detail.

Fig. 1 is the utility model structure vertical view.

Fig. 2 is the utility model structure cutaway view.

Wherein: 1, mesa recess, 2, the break-through ring, 3, growing base area, 4, positive short base, 5, short base, the back side, 6, the cathodic region, 7, the gate pole district, 8, groove between the negative electrode gate pole, 9, glass dust.

Embodiment

As illustrated in fig. 1 and 2, a kind of improved SCR structure of the utility model, comprise mesa recess 1, break-through ring 2, growing base area 3, positive short base 4, short 5 cathodic regions 6, base, the back side and gate pole district 7, break-through ring 2 be located at growing base area 3 around, have groove 8 between the negative electrode gate pole between cathodic region 6 and the gate pole district 7, be filled with glass dust 9 between the negative electrode gate pole in the groove 8.

Claims

1. improved SCR structure, comprise mesa recess, break-through ring, growing base area, positive short base, the back side short base, cathodic region and gate pole district, described break-through be located on growing base area around, it is characterized in that: have groove between the negative electrode gate pole between described cathodic region and the gate pole district, be filled with glass dust in the groove between described negative electrode gate pole.