CN104681635A - Diode structure for reducing anode hole injection - Google Patents
Diode structure for reducing anode hole injection Download PDFInfo
- Publication number
- CN104681635A CN104681635A CN201510103019.3A CN201510103019A CN104681635A CN 104681635 A CN104681635 A CN 104681635A CN 201510103019 A CN201510103019 A CN 201510103019A CN 104681635 A CN104681635 A CN 104681635A
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- CN
- China
- Prior art keywords
- region
- conductive region
- diode structure
- semiconductor substrate
- hole injection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002347 injection Methods 0.000 title claims abstract description 9
- 239000007924 injection Substances 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims abstract description 24
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention relates to a diode structure, in particular to a diode structure for reducing the anode hole injection and belongs to the technical field of semiconductor diodes. According to the technical scheme provided by the invention, the diode structure for reducing the anode hole injection comprises a semiconductor substrate, wherein a P conducting region and an N conducting region for forming a PN junction are arranged in the semiconductor substrate; an N+region of which the doping concentration is larger than that of the N conducting region is arranged between the P conducting region and the N conducting region. According to the diode structure, as the N+region is arranged between the P conducting region and the N conducting region, and the doping concentration of the N+region is larger than that of the N conducting region, in combination with the N+region and a hole in the P conducting region, the hole injection quantity in the N conducting region is reduced, so that the dynamic loss of a diode can be effectively reduced; the diode structure is compact, safe and reliable.
Description
Technical field
The present invention relates to a kind of diode structure, especially a kind of diode structure reducing anode hole and inject, belongs to the technical field of semiconductor diode.
Background technology
As shown in Figure 1, for the structure of existing diode, comprise the P conductive region 2 for the formation of PN junction and N conductive region 3, P conductive region 2 is connected with N conductive region 3, P conductive region 2 arranges anode metal 1, N conductive region 3 arranges cathodic metal 4, anode metal 1 and P conductive region 2 ohmic contact, cathodic metal 4 and N conductive region 3 ohmic contact.Operationally, apply voltage by anode metal 1 and cathodic metal 4, to form the PN junction of forward conduction, but there is the larger shortcoming of dynamic loss in existing diode structure.At present, in order to reduce the dynamic loss of diode, can reduce the wastage by the concentration of reduction P conductive region 2 or by importing life control (heavy metal or electric wire radiation), but the concentration reducing P conductive region 2 can cause contact resistance to become greatly, and then cause loss to increase; And when being reduced the wastage by importing life control, easily cause electric leakage significantly to increase.Therefore, the dynamic loss how lowering diode is a current difficult problem.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, provide a kind of diode structure reducing anode hole and inject, its compact conformation, injecting the dynamic loss that effectively can reduce diode by reducing anode hole, safe and reliable.
According to technical scheme provided by the invention, the diode structure that described reduction anode hole injects, comprises semiconductor substrate, comprises the P conductive region for the formation of PN junction and N conductive region in described semiconductor substrate; The N+ region that doping content is greater than N conductive region is provided with between described P conductive region and N conductive region.
Described semiconductor substrate comprises silicon substrate, arranges the anode metal be used for P conductive region ohmic contact in the front of semiconductor substrate, arranges the cathodic metal be used for N conductive region ohmic contact at the back side of semiconductor substrate.
The doping content in described N+ region is 1E15cm-3 ~ 1E17cm-3.
Advantage of the present invention: by arranging N+ region between P conductive region and N conductive region, the doping content in N+ region is greater than the doping content of N conductive region, by the combination in hole in N+ region and P conductive region, reduce the hole injection fluence entered in N conductive region, thus effectively can reduce the dynamic loss of diode, compact conformation, safe and reliable.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of existing diode.
Fig. 2 is structural representation of the present invention.
Fig. 3 is the quiescent dissipation of diode of the present invention and the change schematic diagram of dynamic loss.
Description of reference numerals: 1-anode metal, 2-P conductive region, 3-N conductive region, 4-cathodic metal and 5-N+ region.
Embodiment
Below in conjunction with concrete drawings and Examples, the invention will be further described.
As shown in Figure 2: in order to inject the dynamic loss that effectively can reduce diode by reducing anode hole, the present invention includes semiconductor substrate, in described semiconductor substrate, comprising the P conductive region 2 for the formation of PN junction and N conductive region 3; The N+ region 5 that doping content is greater than N conductive region 3 is provided with between described P conductive region 2 and N conductive region 3.
Described semiconductor substrate comprises silicon substrate, arranges the anode metal 1 be used for P conductive region 2 ohmic contact in the front of semiconductor substrate, arranges the cathodic metal 4 be used for N conductive region 3 ohmic contact at the back side of semiconductor substrate.
Particularly, the material of semiconductor substrate can be silicon, and the upper surface of P conductive region 2 forms the front of semiconductor substrate, and the lower surface of N conductive region 3 forms the back side of semiconductor substrate.The doping content in N+ region 5 is greater than the concentration of N conductive region 3, the concentration range that the doping content of N conductive region 3 and the doping content of P conductive region 2 all can adopt the art conventional, known by the art personnel, repeats no more herein.In the specific implementation, can by carrying out the injection of N conductive type impurity ion in the front of semiconductor substrate or the back side, to form N+ region 5 in semiconductor substrate.
In the embodiment of the present invention, the doping content in described N+ region 5 is 1E15cm-3 ~ 1E17cm-3, the anode of diode is formed after anode metal 1 and P conductive region 2 ohmic contact, after the hole of P conductive region 2 is injected, by the N+ region 5 between P conductive region 2 and N conductive region 3, thus can when not reducing P conductive region 2 doping content, the hole effectively reducing anode is injected, and lowers dynamic loss.In addition, N+ region 5 is within the scope of above-mentioned doping content, and doping content is higher, higher from the Percentage bound in anode injected holes and N+ region 5, and the anode hole injection rate entered in N conductive region 3 also can be fewer, thus reduces dynamic loss.As shown in Figure 3, for the doping content of N+ region 5 below P conductive region 2 different time, the quiescent dissipation of diode and the change of dynamic loss.
Claims (3)
1. reduce the diode structure that anode hole injects, comprise semiconductor substrate, in described semiconductor substrate, comprise the P conductive region (2) for the formation of PN junction and N conductive region (3); It is characterized in that: between described P conductive region (2) and N conductive region (3), be provided with the N+ region (5) that doping content is greater than N conductive region (3).
2. the diode structure of reduction anode hole injection according to claim 1, it is characterized in that: described semiconductor substrate comprises silicon substrate, the anode metal (1) be used for P conductive region (2) ohmic contact is set in the front of semiconductor substrate, the cathodic metal (4) be used for N conductive region (3) ohmic contact is set at the back side of semiconductor substrate.
3. the diode structure of reduction anode hole injection according to claim 1, is characterized in that: the doping content of described N+ region (5) is 1E15cm-3 ~ 1E17cm-3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510103019.3A CN104681635A (en) | 2015-03-09 | 2015-03-09 | Diode structure for reducing anode hole injection |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510103019.3A CN104681635A (en) | 2015-03-09 | 2015-03-09 | Diode structure for reducing anode hole injection |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104681635A true CN104681635A (en) | 2015-06-03 |
Family
ID=53316448
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510103019.3A Pending CN104681635A (en) | 2015-03-09 | 2015-03-09 | Diode structure for reducing anode hole injection |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104681635A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08316499A (en) * | 1995-05-23 | 1996-11-29 | Toyo Electric Mfg Co Ltd | High-speed diode |
| CN102194894A (en) * | 2011-05-06 | 2011-09-21 | 杭州杭鑫电子工业有限公司 | Electrical-surge-resistance low-voltage-protection silicon diode and manufacturing method thereof |
| CN103311278A (en) * | 2012-03-11 | 2013-09-18 | 深圳市立德电控科技有限公司 | Fast recovery diode and method for manufacturing fast recovery diode |
| CN204481031U (en) * | 2015-03-09 | 2015-07-15 | 江苏中科君芯科技有限公司 | Reduce the diode structure that anode hole injects |
-
2015
- 2015-03-09 CN CN201510103019.3A patent/CN104681635A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08316499A (en) * | 1995-05-23 | 1996-11-29 | Toyo Electric Mfg Co Ltd | High-speed diode |
| CN102194894A (en) * | 2011-05-06 | 2011-09-21 | 杭州杭鑫电子工业有限公司 | Electrical-surge-resistance low-voltage-protection silicon diode and manufacturing method thereof |
| CN103311278A (en) * | 2012-03-11 | 2013-09-18 | 深圳市立德电控科技有限公司 | Fast recovery diode and method for manufacturing fast recovery diode |
| CN204481031U (en) * | 2015-03-09 | 2015-07-15 | 江苏中科君芯科技有限公司 | Reduce the diode structure that anode hole injects |
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| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150603 |
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| RJ01 | Rejection of invention patent application after publication |