CN105161546B - high voltage Schottky diode device - Google Patents
high voltage Schottky diode device Download PDFInfo
- Publication number
- CN105161546B CN105161546B CN201510626613.0A CN201510626613A CN105161546B CN 105161546 B CN105161546 B CN 105161546B CN 201510626613 A CN201510626613 A CN 201510626613A CN 105161546 B CN105161546 B CN 105161546B
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- Prior art keywords
- type
- well
- deep trap
- heavily doped
- type deep
- Prior art date
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- 230000005516 deep trap Effects 0.000 claims abstract description 38
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 4
- 239000001301 oxygen Substances 0.000 claims abstract description 4
- 230000002093 peripheral effect Effects 0.000 claims abstract description 4
- 238000002955 isolation Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
Abstract
The invention discloses a kind of high voltage Schottky diode device, comprising：One N-type deep trap；In the periphery of N-type deep trap, in top plan view, there is the high pressure p-well of an annular around surrounding n-type deep trap, and do not contact with N-type deep trap；Also there is heavily doped P-type area in high pressure p-well；The p-well for having annular in N-type deep trap and the N traps positioned at ring-shaped P trap peripheral annular, are isolated between p-well and N traps with field oxygen；In p-well there is heavily doped P-type area, there is heavily doped N-type area in N traps, have contact hole to be formed in heavily doped P-type area and heavily doped N-type area and draw；The high pressure p-well of the N-type deep trap and its periphery is located on a p type buried layer.N type buried layer is become p type buried layer by the present invention, using double RESUFE principles, improves the voltage endurance capability of Schottky diode.
Description
Technical field
The present invention relates to field of manufacturing semiconductor devices, particularly relate to a kind of high voltage Schottky diode device.
Background technology
Schottky diode (Schottky Barrier Diode, be abbreviated as SBD) is to utilize metal and semiconductor contact
What the metal-semiconductor junction principle of formation made.Therefore, SBD is also referred to as metal-semiconductor (contact) diode or surface potential
Diode is built, it is a kind of hot carrier diode.
Schottky diode, as anode, using N-type semiconductor B as cathode, utilizes two using noble metal (gold, silver, aluminium, platinum etc.) A
The potential barrier formed on person's contact surface manufactured metal-semiconductor device with rectification characteristic.Because in N-type semiconductor there is
A large amount of electronics, only minimal amount of free electron in noble metal, so electronics is just from highly concentrated B into the low A of concentration
Diffusion.Obviously, there is no hole in metal A, diffusion motion of the hole from A to B is also just not present.As electronics is constantly spread from B
To A, B surface electron concentration continuously decreases, and surface electroneutrality is destroyed, and then just forms potential barrier, and direction of an electric field is B → A.But
Under the electric field action, the electronics in A can also generate the drift motion from A → B, so as to slacken due to diffusion motion and shape
Into electric field.Behind the space-charge region for setting up one fixed width, electronics drift motion caused by electric field and concentration difference cause
Electrons spread movement reach opposite balance, just form Schottky barrier.
In traditional BCD techniques, the structure of Schottky diode is general as shown in Figure 1, deep for N-type on its n type buried layer
Trap, there is the p-well of annular and the N traps of annular, N Jing Zhongyou heavily doped N-types area in N-type deep trap, and surface forms schottky junction, draws shape
Into the anode of Schottky diode, N-type deep trap draws the cathode to form Schottky diode.The structure Schottky diode is hit
Wearing voltage BV is provided by the PN junction between the p-well in N-type deep trap and N-type deep trap, therefore, when desired Schottky diode is hit
When wearing voltage more than this PN junction voltage, which can not just realize.
Invention content
The technical problems to be solved by the invention are to provide a kind of high voltage Schottky diode device, have higher breakdown
Voltage.
To solve the above problems, a kind of high voltage Schottky diode device of the present invention, structure include：
One N-type deep trap；
In the periphery of N-type deep trap, in top plan view, there is the high pressure p-well of an annular around surrounding n-type deep trap, and deep with N-type
Trap does not contact；
Also there is heavily doped P-type area in high pressure p-well；
In N-type deep trap, have annular p-well and the N traps positioned at ring-shaped P trap peripheral annular, between p-well and N traps with
Field oxygen isolation；
In p-well there is heavily doped P-type area, there is in N traps heavily doped N-type area, in heavily doped P-type area and heavily doped N-type area
There is contact hole to be formed to draw；
The high pressure p-well of the N-type deep trap and its periphery is located on a p type buried layer.
The p type buried layer extends toward outside, and the projection of high pressure p-well and N-type deep trap is all located within the scope of p type buried layer.
High voltage Schottky diode of the present invention by the way that the n type buried layer under former N-type deep trap is become p type buried layer, is adopted
With double RESUFE principles, the voltage endurance capability of Schottky diode is improved, and the manufacturing process of the structure and original BCD techniques are simultaneous
Hold, do not increase manufacture cost.
Description of the drawings
Fig. 1 is the structure diagram of conventional high-pressure Schottky diode；
Fig. 2 is the structure diagram of high voltage Schottky diode of the present invention.
Reference sign
1 is p type buried layer, and 2 be high pressure p-well, and 3 be N-type deep trap, and 4 be heavily doped P-type area, and 5 be isolated area, and 6 be heavy doping N
Type area, 7 be N traps, and 8 be p-well, and 9 be n type buried layer.
Specific embodiment
High voltage Schottky diode device of the present invention, structure as shown in Fig. 2, comprising：
One N-type deep trap；
In the periphery of N-type deep trap, in top plan view, there is the high pressure p-well of an annular around surrounding n-type deep trap, and deep with N-type
Trap does not contact；
Also there is heavily doped P-type area in high pressure p-well；
In N-type deep trap, have annular p-well and the N traps positioned at ring-shaped P trap peripheral annular, between p-well and N traps with
Field oxygen isolation；
In p-well there is heavily doped P-type area, there is in N traps heavily doped N-type area, in heavily doped P-type area and heavily doped N-type area
There is contact hole to be formed to draw；
The high pressure p-well of the N-type deep trap and its periphery is located on a p type buried layer, and the p type buried layer prolongs toward outside
It stretches, the projection of high pressure p-well and N-type deep trap is all located within the scope of p type buried layer.
N type buried layer below N-type deep trap as shown in Figure 1 is replaced with p type buried layer by above structure, using double rSEURF originals
Reason improves the breakdown voltage of device.After tested, under equal process conditions, if the breakdown voltage of structure shown in Fig. 1 is 39
It lies prostrate, then structure breakdown voltage of the invention can reach 56 volts.The principle that this structure can improve breakdown voltage is：If N-type is buried
The vertical and horizontal that layer, only high pressure p-well and N-type deep trap are formed exhaust；After n type buried layer is changed into p type buried layer, p type buried layer
Longitudinal direction can be formed with N-type deep trap to exhaust, the depletion layer of such words N-type deep trap is just by p type buried layer and high pressure p-well collective effect shape
Into increasing the depletion layer area (depletion layer area is bigger, pressure resistance higher) of N-type deep trap, and then improve breakdown voltage.
Above-mentioned high voltage Schottky diode may be used the following process based on BCD techniques and be implemented：
1st step forms p type buried layer, and forming method is ion implanting, and thermal annealing activates；2nd step forms p-type extension；
3rd step, ion implanting and propulsion form N-type deep trap；
4th step, forms high pressure p-well, and method is ion implanting and propulsion；
5th step, active area are formed；
6th step, is respectively adopted ion implanting and thermal annealing activates to form N traps and p-well；
7th step forms gate oxide；
8th step, depositing polysilicon simultaneously return quarter, form polysilicon gate；
9th step according to practical devices demand, carries out LDD techniques, is directly carried out in next step if device is injected without LDD；
10th step forms side wall；
11st step, ion implanting and thermal annealing activate to form heavily doped N-type area and heavily doped P-type area；
12nd step forms polycrystalline silicon；
13rd step makes metal connecting line, completes rear end process.
Above-mentioned technique and existing BCD process compatibles, do not influence cost and compatibility.
It these are only the preferred embodiment of the present invention, be not intended to limit the present invention.Those skilled in the art is come
It says, the invention may be variously modified and varied.All within the spirits and principles of the present invention, it is any modification for being made, equivalent
Replace, improve etc., it should all be included in the protection scope of the present invention.
Claims (2)
1. a kind of high voltage Schottky diode device, structure include：
One N-type deep trap；
In the periphery of N-type deep trap, in top plan view, there is the high pressure p-well of an annular around surrounding n-type deep trap, and with N-type deep trap not
Contact；
Also there is heavily doped P-type area in high pressure p-well；
The p-well that there is annular in N-type deep trap and the N traps positioned at ring-shaped P trap peripheral annular, with field oxygen between p-well and N traps
Isolation；
In p-well there is heavily doped P-type area, in N traps there is heavily doped N-type area, connect in heavily doped P-type area and heavily doped N-type area
Contact hole, which is formed, draws；
It is characterized in that：
The high pressure p-well of the N-type deep trap and its periphery is located on a p type buried layer, and the p type buried layer extends toward outside, high
The projection of pressure p-well and N-type deep trap is all located within the scope of p type buried layer.
2. high voltage Schottky diode device as described in claim 1, it is characterised in that：It is buried with p-type the N-type deep trap bottom
Layer contact.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510626613.0A CN105161546B (en) | 2015-09-28 | 2015-09-28 | high voltage Schottky diode device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510626613.0A CN105161546B (en) | 2015-09-28 | 2015-09-28 | high voltage Schottky diode device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105161546A CN105161546A (en) | 2015-12-16 |
| CN105161546B true CN105161546B (en) | 2018-06-19 |
Family
ID=54802359
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510626613.0A Active CN105161546B (en) | 2015-09-28 | 2015-09-28 | high voltage Schottky diode device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105161546B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105576014B (en) * | 2015-12-22 | 2018-10-26 | 上海华虹宏力半导体制造有限公司 | Schottky diode and its manufacturing method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101546785A (en) * | 2008-03-24 | 2009-09-30 | 台湾积体电路制造股份有限公司 | Integrated circuit structure |
| CN102694033A (en) * | 2011-01-20 | 2012-09-26 | 上海华虹Nec电子有限公司 | Schottky diode device and manufacturing method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8324705B2 (en) * | 2008-05-27 | 2012-12-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Schottky diodes having low-voltage and high-concentration rings |
-
2015
- 2015-09-28 CN CN201510626613.0A patent/CN105161546B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101546785A (en) * | 2008-03-24 | 2009-09-30 | 台湾积体电路制造股份有限公司 | Integrated circuit structure |
| CN102694033A (en) * | 2011-01-20 | 2012-09-26 | 上海华虹Nec电子有限公司 | Schottky diode device and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105161546A (en) | 2015-12-16 |
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