CN205265628U - High efficiency RF power amplifier circuit based on broad stopband power device - Google Patents

Abstract

The utility model discloses a high efficiency RF power amplifier circuit based on broad stopband power device, include: input impedance matching network, be used for with conjugate match is carried out to the input impedance and the source impedance of broad stopband power device, realizes incoming signal's maximum power, the broad stopband power device for the completion is enlargied radiofrequency signal input power's, output harmonic control network for adjust three harmonic impedance, to fundamental wave and third harmonic short circuit, open a way to second harmonic, output drain -source parasitic wparameter compensating network for parameter compensation to transistor output parasitic wparameter, output impedance matching network for realize the biggest transmission of power with the impedance of harmonious network.

Description

A kind of high-efficiency radio-frequency power amplifier circuit based on wide-bandgap power devices

Technical field

The utility model relates to the design field of power amplifier, relates in particular to a kind of based on wide-bandgap power devicesHigh-efficiency radio-frequency power amplifier circuit.

Background technology

As everyone knows, radio-frequency power amplifier is that radio-frequency module necessary in various wireless communication systems is also radio frequencyThe device of power consumption maximum in module. Be accompanied by the rapid growth of Modern wireless communication service, particularly in recent yearsCome, along with the Large scale construction operation of 3G and 4G mobile communications network, increasing equipment vendors and telecommunicationsOperator starts to pay close attention to reduction equipment investment and operation cost. Now at radio-frequency power amplifier research field, coreThe technology of the heart is that sending out of semiconductor power device opened on the one hand, is exactly Design of RF Power Amplifier skill on the other handThe development of art. Aspect radio-frequency power device, the third generation power device taking wide-bandgap power devices as representative drawsSent out the dramatic change of industrial circle, wide-bandgap power devices has high breakdown voltage, very high thermal conductivity, brightAobvious higher than the electron saturation velocities of other material and splendid capability of resistance to radiation, be applicable to very much making high temperature, high frequencyAnd high power device. So the exploitation of the power device applications technology based on semiconductor material with wide forbidden band is drawnQi Liao academia and engineers and technicians' extensive concern.

In Design of RF Power Amplifier technical field, main research direction is the linearisation of amplifier and efficientRate, therefore, power amplifier linearization technology digital pre-distortion technology of new generation has obtained great development. AndThe technical development that strengthens efficiency relatively lags behind, at present, and in the radio-frequency power amplifier effect of moving communicating fieldRate method for improving common are envelope-tracking and average power tracking, by be used for regulating drain electrode in conjunction with power detectionThe voltage of direct voltage source, thus the improvement to efficiency of RF power amplifier completed. But a lot of efficiency is carriedHigh technical scheme all needs to design extra control circuit, as power supply control chip circuit etc., from reducing circuitThe complexity of cost and simplified design circuit, these schemes all need to improve.

Utility model content

Utility model object: the problem and shortage existing for above-mentioned prior art, the purpose of this utility model isProvide a kind of high-efficiency radio-frequency power amplifier circuit based on wide-bandgap power devices, the ideal effect of this kind of circuitRate can reach more than 80%, and circuit is simple in structure, does not need extra control circuit, effectively fallsLow design production cost and the operation cost of circuit.

Technical scheme: the utility model discloses a kind of high efficiency radio-frequency power based on wide-bandgap power devices and putLarge device circuit, is characterized in that: comprising: sending-end impedance matching network, and for by described broad stopband power deviceThe input impedance of part and source impedance are carried out conjugate impedance match, realize the maximum power transfer of input signal; Broad stopband meritRate device, for completing the amplification to radiofrequency signal input power; Output harmonic wave control network, for regulatingThree harmonic impedances, to first-harmonic and triple-frequency harmonics short circuit, open a way to second harmonic; Output drain-source parasitic parameterCompensating network, for the parametric compensation to transistor output parasitic parameter; Output impedance matching network, forThe impedance of tuning network is realized to power maximum transmitted.

Wherein, the input access input signal of wide-bandgap power devices, this sending-end impedance matching network and wideThe input of forbidden band power device is connected; Output drain-source parasitic parameter compensating network and wide-bandgap power devicesOutput is connected; The input of output harmonic wave control network is connected with the output of wide-bandgap power devices; DefeatedThe input of output impedance matching network is connected with described output harmonic wave control network,

As further optimization of the present utility model, wide-bandgap power devices described in the utility model is prohibited for adoptingBandwidth is more than or equal to the power device of the semi-conducting material of 3.2eV, and this wide-bandgap power devices works in switchWhen state, the angle of flow is 50%, and wide-bandgap power devices of the present utility model can adopt SiC, GaN, goldThe semi-conducting materials such as hard rock.

As further optimization of the present utility model, sending-end impedance matching network described in the utility model, adoptsWith the parallel connection that is tuned in first-harmonic or/and the LC resonance circuit of series connection, wherein, the LC of serial or parallel connection vibration electricityThe quantity on road can be multiple.

As further optimization of the present utility model, output harmonic wave control network using described in the utility modelLC resonance circuit in parallel, adjusts the impedance of harmonic wave,

The impedance of Circuit tuning second harmonic is infinitely great, makes the secondary of radio-frequency power amplifier of the present utility modelHarmonic wave is open-circuit condition, and the impedance of Circuit tuning triple-frequency harmonics is zero, and radio-frequency power of the present utility model is amplifiedThe triple-frequency harmonics of device is short-circuit condition, and the LC resonance circuit in parallel of output harmonic wave control network is by radio-frequency powerAmplifier circuit is adjusted to second harmonic open circuit, and its corresponding harmonic component only has component of voltage, and output alsoConnection LC resonance circuit is adjusted to triple-frequency harmonics short circuit by RF power amplifier circuit, its corresponding harmonic componentOnly has current component.

As further optimization of the present utility model, output drain-source parasitic parameter compensation described in the utility modelNetwork using shunt capacitance structure, this shunt capacitance is equivalent to the output capacitance of device inside and is added on network outwardExternal electric capacity, because this output drain-source parasitic parameter compensating network is in parallel with wide-bandgap power devices, therefore work asWide-bandgap power devices, in the time of closure state, is zero by the electric current of shunt capacitance, works as wide-bandgap power devicesIn the time of off-state, be zero by the electric current of wide-bandgap power devices; Therefore, when wide-bandgap power devices closesWhile closing, wide-bandgap power devices both end voltage is zero, and electric current is by DC current with by wide-bandgap power devicesLoad current composition, in the time of wide-bandgap power devices, there is voltage in wide-bandgap power devices two ends, and electric current passes throughShunt capacitance.

As further optimization of the present utility model, output impedance matching networks described in the utility model adopts to be adjustedThe humorous parallel connection in first-harmonic or/and series connection LC resonance circuit, wherein, the LC oscillating circuit of serial or parallel connectionQuantity can be multiple.

Beneficial effect: the utility model compared with prior art, has the following advantages: wide taboo of the present utility modelBetween output voltage with power device and current waveform, there is not overlapping part, make wide-bandgap power devicesWithout any power attenuation, thereby reach the object that improves this kind of RF power amplifier circuit efficiency.

Brief description of the drawings

Fig. 1 is the circuit block diagram of the utility model high efficiency power amplifier;

Fig. 2 is the embodiment circuit theory diagrams of the utility model high efficiency power amplifier.

Fig. 3 is the utility model high efficiency power amplifier drain electrode output current and voltage oscillogram;

1--power device direct grid current voltage source, 2--input impedance matching network, 3--wide-bandgap power devices,4--wide-bandgap power devices drain electrode direct voltage source, 5--drain electrode radio-frequency choke, 6--output drain-source parasitismParametric compensation network shunt capacitance, 7-output harmonic wave control network, 8--output impedance matching networks, 9--are eventuallyEnd load impedance.

Detailed description of the invention

Below in conjunction with specific embodiment, the utility model is elaborated, but the utility model is described simultaneouslyProtection domain be not limited to the concrete scope of the present embodiment, based on the embodiment in the utility model, abilityTerritory those of ordinary skill, not making the every other embodiment obtaining under creative work prerequisite, all belongs toThe scope of the utility model protection.

As shown in Figure 1 and Figure 2, the high efficiency radio-frequency power based on wide-bandgap power devices of the present utility model is putLarge device circuit, specifically comprises: power device direct grid current voltage source 1, is connected on wide-bandgap power devices inputThe LC resonance input impedance matching network 2 in parallel of end, wide-bandgap power devices 3, wide-bandgap power devices drain electrodeDirect voltage source 4, drain electrode radio-frequency choke 5, output drain-source parasitic parameter compensating network shunt capacitance 6,Be connected on the output harmonic wave control network 7 of signal output part, the LC resonance in parallel that is connected in parallel on signal output part is defeatedGo out impedance matching network 8 and terminate load impedance 9.

As shown in Figure 2, wide-bandgap power devices drain electrode direct voltage source 1 is worked and is carried for wide-bandgap power devices 3Energizing quantity, radiofrequency signal is through being connected on the LC resonance in parallel input impedance of wide-bandgap power devices 3 inputsMatching network 2, carries out frequency-selecting by network, and fundamental signal is delivered to broad stopband merit to do high power transmission patternRate device 3, wide-bandgap power devices drain electrode direct voltage source 4 provides a biasing to wide-bandgap power devices 3Voltage is operated under switching mode wide-bandgap power devices 3, is equivalent to a switch element, wherein wide tabooBand power device drain electrode direct voltage source 4 provides one to wide-bandgap power devices 3 by drain electrode radio-frequency choke 5Individual bias voltage, drain electrode radio-frequency choke 5 has high reactance to input fundamental signal, protection drain electrode direct currentPotential source is not disturbed by radiofrequency signal.

Output drain-source parasitic parameter compensating network shunt capacitance 6 and wide-bandgap power devices 3, in broad stopband meritRate device 3, in the time of closure state, flows through the electric current of output drain-source parasitic parameter compensating network shunt capacitance 6Be zero, suppose that output current isIn formulaIt is initial phase. Broad stopband powerThe electric current of device 3 be the DC current of original state and sinusoidal output current and, fixed by expression formula belowJustice:

At wide-bandgap power devices 3, during in off-state, the electric current that flows through wide-bandgap power devices 3 is zero,The electric current that now flows through output drain-source parasitic parameter compensating network shunt capacitance 6 is DC current and sinusoidal defeatedGo out electric current and, the expression formula definition with below:

Now, the power tube switch ends voltage of wide-bandgap power devices 3 is compensated by output drain-source parasitic parameterThe charging of network shunt capacitance 6 determines, can be obtained by equation below:

Under wide-bandgap power devices 3 optimized switch conditions, the shape of its power tube switch ends steady state voltage waveformFormula is:

$V_{DS}\left(\mathrm{\ω}t\right)=\frac{I_{DQ}}{\mathrm{\ω}C}(\mathrm{\ω}t-\frac{3\mathrm{\π}}{2}-\frac{\mathrm{\π}}{2}cos\mathrm{\ω}t-\sin \mathrm{\ω}t)$

By analysis above, we can find out within switch turn-off time, wide-bandgap power devices 3 drain electrode electricityCorrugating is normalized to:

$\frac{V_{DS}\left(\mathrm{\ω}t\right)}{V_{DD}}=\mathrm{\π}(\mathrm{\ω}t-\frac{3\mathrm{\π}}{2}-\frac{\mathrm{\π}}{2}cos\mathrm{\ω}t-\sin \mathrm{\ω}t)$

In switch closing time, current waveform is normalized to:

$\frac{I_D\left(\mathrm{\ω}t\right)}{I_{DQ}}=\mathrm{\ω}t-\frac{3\mathrm{\π}}{2}-\frac{\mathrm{\π}}{2}cos\mathrm{\ω}t-\sin \mathrm{\ω}t$

The output harmonic wave control network 7 that is connected on signal output part is adjusted to two by RF power amplifier circuitSubharmonic open circuit, its corresponding harmonic component only has component of voltage, and this output harmonic wave control network 7 will be penetratedFrequently power amplifier circuit is adjusted to triple-frequency harmonics short circuit, and its corresponding harmonic component only has current component, parallel connectionLC resonance output impedance matching networks 8 in parallel at signal output part is believed the output of wide-bandgap power devices 3Number be delivered to terminate load impedance 9 with maximum power transfer pattern.

Fig. 3 has provided the oscillogram of wide-bandgap power devices 3 drain voltages and electric current, works as wide-bandgap power devices3 in the time of closure state, is zero by the electric current of shunt capacitance 6, and wide-bandgap power devices 3 both end voltage areZero, electric current forms by DC current with by the load current of wide-bandgap power devices 3; When broad stopband power devicePart 3, in the time of off-state, is zero by the electric current of wide-bandgap power devices 3, wide-bandgap power devices 3There is voltage in two ends, electric current is by shunt capacitance 6. Now, the output voltage of wide-bandgap power devices 3 and electricityBetween stream waveform, there is not overlapping part, make wide-bandgap power devices 3 without any power attenuation, therebyReach the object that improves this kind of RF power amplifier circuit efficiency.

Embodiment of the present utility model for example and describe for the purpose of and provide, and be not exhaustively orThe utility model is limited to disclosed form by person. Many modifications and variations are for those of ordinary skill in the artApparent. Selecting and describing embodiment is for better explanation principle of the present utility model and realityApplication, thus and make those of ordinary skill in the art can understand the utility model design to be suitable for special-purposeThe various embodiment with various amendments.

Claims (6)

1. the high-efficiency radio-frequency power amplifier circuit based on wide-bandgap power devices, is characterized in that: comprising:

Sending-end impedance matching network, for carrying out the input impedance of described wide-bandgap power devices and source impedanceConjugate impedance match, realizes the maximum power transfer of input signal;

Wide-bandgap power devices, for completing the amplification to radiofrequency signal input power;

Output harmonic wave control network, for regulating three harmonic impedances, to first-harmonic and triple-frequency harmonics short circuit, rightSecond harmonic open circuit;

Output drain-source parasitic parameter compensating network, for the parametric compensation to transistor output parasitic parameter;

Output impedance matching network, for realizing power maximum transmitted by the impedance of tuning network;

Described sending-end impedance matching network is connected with the input of wide-bandgap power devices; Described output drain-sourceParasitic parameter compensating network is connected with the output of wide-bandgap power devices; Described output harmonic wave control networkInput is connected with the output of wide-bandgap power devices; The input of described output impedance matching network with described inOutput harmonic wave control network is connected.

2. the high-efficiency radio-frequency power amplifier electricity based on wide-bandgap power devices according to claim 1Road, is characterized in that: described wide-bandgap power devices is to adopt energy gap to be more than or equal to the semiconductor of 3.2eVThe power device of material, when this wide-bandgap power devices works on off state, the angle of flow is 50%.

3. the high efficiency radio-frequency power based on wide-bandgap power devices according to claim 1 and 2 amplifiesDevice circuit, is characterized in that: described sending-end impedance matching network, adopt be tuned in first-harmonic parallel connection or/andThe LC resonance circuit of series connection.

4. the high efficiency radio-frequency power based on wide-bandgap power devices according to claim 1 and 2 amplifiesDevice circuit, is characterized in that: described output harmonic wave control network using LC resonance circuit in parallel.

5. the high efficiency radio-frequency power based on wide-bandgap power devices according to claim 1 and 2 amplifiesDevice circuit, is characterized in that: described output drain-source parasitic parameter compensating network adopts shunt capacitance structure.

6. the high-efficiency radio-frequency power amplifier electricity based on wide-bandgap power devices according to claim 1Road, is characterized in that: output impedance matching networks adopts the parallel connection that is tuned in first-harmonic or/and the LC resonance of series connectionCircuit.