CN205265628U - High efficiency RF power amplifier circuit based on broad stopband power device - Google Patents

Abstract

The utility model discloses a high-efficiency radio frequency power amplifier circuit based on a wide bandgap power device, comprising: an input end impedance matching network, which is used for conjugate matching the input impedance and source impedance of the wide bandgap power device, Realize the maximum power transmission of the input signal; the wide bandgap power device is used to complete the amplification of the input power of the radio frequency signal; the harmonic control network at the output end is used to adjust the impedance of the three harmonics, short-circuit the fundamental wave and the third harmonic, An open circuit for the second harmonic; a drain-source parasitic parameter compensation network at the output end, used for parameter compensation of the parasitic parameters output by the transistor; an impedance matching network at the output end, used for maximizing power transmission through the impedance of the tuning network.

Description

A High Efficiency RF Power Amplifier Circuit Based on Wide Bandgap Power Device

technical field

The utility model relates to the design field of power amplifiers, in particular to a high-efficiency radio frequency power amplifier circuit based on wide bandgap power devices.

Background technique

As we all know, radio frequency power amplifier is a necessary radio frequency module in various wireless communication systems, and it is also the device with the largest power consumption in the radio frequency module. With the rapid growth of modern wireless communication services, especially in recent years, with the large-scale construction and operation of 3G and 4G mobile communication networks, more and more equipment manufacturers and telecom operators have begun to focus on reducing equipment investment and operating costs. Today, in the field of RF power amplifier research, the core technology is the development of semiconductor power devices on the one hand, and the development of RF power amplifier design technology on the other hand. In terms of RF power devices, the third-generation power devices represented by wide-bandgap power devices have triggered tremendous changes in the industry. Wide-bandgap power devices have high breakdown voltage and high thermal conductivity, which are significantly higher than The electron saturation rate and excellent radiation resistance of other materials are very suitable for making high temperature, high frequency and high power devices. Therefore, the development of power device application technology based on wide bandgap semiconductor materials has attracted extensive attention from academics and engineers.

In the field of RF power amplifier design technology, the main research direction is the linearization and high efficiency of the amplifier. Therefore, the new generation of power amplifier linearization technology and digital pre-distortion technology have been greatly developed. However, the development of technology to enhance efficiency is relatively lagging behind. At present, the common methods for improving the efficiency of RF power amplifiers in the field of mobile communications include envelope tracking and average power tracking, which are used to adjust the voltage of the drain DC voltage source by combining power detection, so that Complete improvements to the efficiency of RF power amplifiers. However, many technical solutions for improving efficiency require the design of additional control circuits, such as power supply control chip circuits, etc. These solutions need to be improved in terms of reducing circuit costs and simplifying the complexity of designing circuits.

Utility model content

Purpose of the utility model: for the problems and deficiencies in the above-mentioned prior art, the purpose of the utility model is to provide a high-efficiency radio frequency power amplifier circuit based on a wide bandgap power device, the ideal efficiency of this circuit can reach more than 80%, Moreover, the structure of the circuit is simple, no additional control circuit is needed, and the design and production cost and operation cost of the circuit are effectively reduced.

Technical solution: The utility model discloses a high-efficiency radio frequency power amplifier circuit based on a wide-bandgap power device, which is characterized in that it includes: an input impedance matching network for connecting the input impedance of the wide-bandgap power device to The source impedance is conjugate matched to realize the maximum power transmission of the input signal; the wide bandgap power device is used to amplify the input power of the radio frequency signal; the harmonic control network at the output end is used to adjust the three harmonic impedances, and the base Wave and third harmonic short circuit, open circuit for second harmonic; output drain-source parasitic parameter compensation network, used for parameter compensation of transistor output parasitic parameters; output impedance matching network, used to maximize the impedance of the tuning network transmission.

Among them, the input terminal of the wide bandgap power device is connected to the input signal, and the impedance matching network of the input terminal is connected to the input terminal of the wide bandgap power device; the drain-source parasitic parameter compensation network of the output terminal is connected to the output terminal of the wide bandgap power device ; The input end of the output end harmonic control network is connected to the output end of the wide bandgap power device; the input end of the output end impedance matching network is connected to the output end harmonic control network,

As a further optimization of the utility model, the wide bandgap power device described in the utility model is a power device using a semiconductor material with a bandgap width greater than or equal to 3.2eV. When the wide bandgap power device works in the switch state, the conduction angle is 50%, and the wide bandgap power device of the present invention can use semiconductor materials such as SiC, GaN, and diamond.

As a further optimization of the utility model, the input impedance matching network described in the utility model adopts a parallel or/and series LC resonant circuit tuned to the fundamental wave, wherein the number of series or parallel LC resonant circuits can be many indivual.

As a further optimization of the utility model, the output harmonic control network described in the utility model adopts a parallel LC resonant circuit to adjust the impedance of the harmonic,

The second harmonic impedance of the adjustment circuit is infinite, so that the second harmonic of the radio frequency power amplifier of the present invention is an open circuit state, and the third harmonic impedance of the adjustment circuit is zero, so that the third harmonic of the radio frequency power amplifier of the present invention is a short circuit state, the parallel LC resonance circuit of the output harmonic control network adjusts the RF power amplifier circuit to the second harmonic open circuit, and its corresponding harmonic component is only the voltage component, and the output parallel LC resonance circuit adjusts the RF power amplifier circuit to the third harmonic Harmonic short circuit, its corresponding harmonic component is only the current component.

As a further optimization of the utility model, the output terminal drain-source parasitic parameter compensation network described in the utility model adopts a parallel capacitance structure, and the parallel capacitance is equivalent to the output capacitance inside the device and the external capacitance added to the network, because the output The terminal-drain-source parasitic parameter compensation network is connected in parallel with the wide-bandgap power device, so when the wide-bandgap power device is in the closed state, the current passing through the parallel capacitor is zero; The current with the power device is zero; therefore, when the wide-bandgap power device is closed, the voltage across the wide-bandgap power device is zero, and the current consists of DC current and the load current through the wide-bandgap power device. When the wide-bandgap power device When a power device is used, there is a voltage across the wide bandgap power device, and the current passes through the shunt capacitor.

As a further optimization of the utility model, the output impedance matching network described in the utility model adopts parallel or/and series LC resonant circuits tuned to the fundamental wave, wherein the number of series or parallel LC resonant circuits can be multiple.

Beneficial effects: Compared with the prior art, the utility model has the following advantages: there is no overlapping part between the output voltage and the current waveform of the wide bandgap power device of the utility model, so that the wide bandgap power device does not have any power Loss, so as to achieve the purpose of improving the efficiency of the RF power amplifier circuit.

Description of drawings

Fig. 1 is the circuit block diagram of the utility model high-efficiency power amplifier;

Fig. 2 is a schematic circuit diagram of an embodiment of the utility model high-efficiency power amplifier.

Fig. 3 is a utility model high-efficiency power amplifier drain output current and voltage waveform diagram;

1--Gate DC voltage source of power device, 2--Input impedance matching network, 3-Wide bandgap power device, 4-Wide bandgap power device drain DC voltage source, 5-Drain RF choke Circle, 6--output drain-source parasitic parameter compensation network parallel capacitance, 7-output harmonic control network, 8-output impedance matching network, 9-terminal load impedance.

detailed description

Below in conjunction with specific embodiment, the utility model is described in detail, but at the same time illustrate that the scope of protection of the utility model is not limited to the specific scope of the present embodiment, based on the embodiment in the utility model, those of ordinary skill in the art have not made All other embodiments obtained under the premise of creative labor belong to the scope of protection of the utility model.

As shown in Figure 1 and Figure 2, the high-efficiency radio frequency power amplifier circuit based on the wide bandgap power device of the present invention specifically includes: a power device grid DC voltage source 1, a parallel LC connected in series at the input end of the wide bandgap power device Resonant input impedance matching network 2, wide bandgap power device 3, wide bandgap power device drain DC voltage source 4, drain RF choke coil 5, drain-source parasitic parameter compensation network parallel capacitor 6 at the output end, connected in series to the signal output The output harmonic control network 7 at the terminal, the parallel LC resonant output impedance matching network 8 and the terminal load impedance 9 connected in parallel at the signal output terminal.

As shown in Figure 2, the drain DC voltage source 1 of the wide bandgap power device provides energy for the operation of the wide bandgap power device 3, and the radio frequency signal passes through the parallel LC resonant input impedance matching network 2 connected in series at the input end of the wide bandgap power device 3, The frequency is selected by the network, and the fundamental wave signal is transmitted to the wide bandgap power device 3 in a high-power transmission mode, and the wide bandgap power device drain DC voltage source 4 provides a bias voltage to the wide bandgap power device 3 so that the wide bandgap power device The bandgap power device 3 works in switch mode, which is equivalent to a switch element, wherein the drain DC voltage source 4 of the wide bandgap power device provides a bias voltage to the wide bandgap power device 3 through the drain RF choke coil 5 , the drain radio frequency choke coil 5 has high reactance to the fundamental wave signal at the input end, and protects the drain DC voltage source from radio frequency signal interference.

The parallel capacitor 6 of the drain-source parasitic parameter compensation network at the output terminal and the wide bandgap power device 3, when the wide bandgap power device 3 is in the closed state, the current flowing through the parallel capacitor 6 of the drain-source parasitic parameter compensation network at the output terminal is zero, assuming The output current is in the formula is the initial phase. The current of the wide bandgap power device 3 is the sum of the DC current in the initial state and the sinusoidal output current, defined by the following expression:

When the wide bandgap power device 3 is in the off state, the current flowing through the wide bandgap power device 3 is zero, and the current flowing through the parallel capacitor 6 of the drain-source parasitic parameter compensation network at the output terminal is a direct current and a sinusoidal output current The sum of is defined by the following expression:

At this time, the voltage across the power tube switch of the wide bandgap power device 3 is determined by the charging of the parallel capacitor 6 of the drain-source parasitic parameter compensation network at the output end, which can be obtained by the following equation:

Under the optimal switching conditions of the wide bandgap power device 3, the form of the steady-state voltage waveform at both ends of the power tube switch is:

${\mathrm{<span\; class="notranslate">\; V</span>}}_{\mathrm{<span\; class="notranslate">\; D.</span>}\mathrm{<span\; class="notranslate">\; S</span>}}<span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; \&omega;</span>}\mathrm{<span\; class="notranslate">\; t</span>}<span\; class="notranslate">\; )</span><span\; class="notranslate">\; =</span>\frac{{\mathrm{<span\; class="notranslate">\; I</span>}}_{\mathrm{<span\; class="notranslate">\; D.</span>}\mathrm{<span\; class="notranslate">\; Q</span>}}}{\mathrm{<span\; class="notranslate">\; \&omega;</span>}\mathrm{<span\; class="notranslate">\; C</span>}}<span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; \&omega;</span>}\mathrm{<span\; class="notranslate">\; t</span>}<span\; class="notranslate">\; -</span>\frac{\mathrm{<span\; class="notranslate">\; 3</span>}\mathrm{<span\; class="notranslate">\; \&pi;</span>}}{\mathrm{<span\; class="notranslate">\; 2</span>}}<span\; class="notranslate">\; -</span>\frac{\mathrm{<span\; class="notranslate">\; \&pi;</span>}}{\mathrm{<span\; class="notranslate">\; 2</span>}}\mathrm{<span\; class="notranslate">\; c</span>}\mathrm{<span\; class="notranslate">\; o</span>}\mathrm{<span\; class="notranslate">\; the\; s</span>}\mathrm{<span\; class="notranslate">\; \&omega;</span>}\mathrm{<span\; class="notranslate">\; t</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; sin</span>}\mathrm{<span\; class="notranslate">\; \&omega;</span>}\mathrm{<span\; class="notranslate">\; t</span>}<span\; class="notranslate">\; )</span>$

From the above analysis, we can see that during the switch off time, the drain voltage waveform of the wide bandgap power device 3 is normalized as:

$\frac{{\mathrm{<span\; class="notranslate">\; V</span>}}_{\mathrm{<span\; class="notranslate">\; D.</span>}\mathrm{<span\; class="notranslate">\; S</span>}}<span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; \&omega;</span>}\mathrm{<span\; class="notranslate">\; t</span>}<span\; class="notranslate">\; )</span>}{{\mathrm{<span\; class="notranslate">\; V</span>}}_{\mathrm{<span\; class="notranslate">\; D.</span>}\mathrm{<span\; class="notranslate">\; D.</span>}}}<span\; class="notranslate">\; =</span>\mathrm{<span\; class="notranslate">\; \&pi;</span>}<span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; \&omega;</span>}\mathrm{<span\; class="notranslate">\; t</span>}<span\; class="notranslate">\; -</span>\frac{\mathrm{<span\; class="notranslate">\; 3</span>}\mathrm{<span\; class="notranslate">\; \&pi;</span>}}{\mathrm{<span\; class="notranslate">\; 2</span>}}<span\; class="notranslate">\; -</span>\frac{\mathrm{<span\; class="notranslate">\; \&pi;</span>}}{\mathrm{<span\; class="notranslate">\; 2</span>}}\mathrm{<span\; class="notranslate">\; c</span>}\mathrm{<span\; class="notranslate">\; o</span>}\mathrm{<span\; class="notranslate">\; the\; s</span>}\mathrm{<span\; class="notranslate">\; \&omega;</span>}\mathrm{<span\; class="notranslate">\; t</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; sin</span>}\mathrm{<span\; class="notranslate">\; \&omega;</span>}\mathrm{<span\; class="notranslate">\; t</span>}<span\; class="notranslate">\; )</span>$

During the switch closing time, the current waveform is normalized to:

$\frac{{\mathrm{<span\; class="notranslate">\; I</span>}}_{\mathrm{<span\; class="notranslate">\; D.</span>}}<span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; \&omega;</span>}\mathrm{<span\; class="notranslate">\; t</span>}<span\; class="notranslate">\; )</span>}{{\mathrm{<span\; class="notranslate">\; I</span>}}_{\mathrm{<span\; class="notranslate">\; D.</span>}\mathrm{<span\; class="notranslate">\; Q</span>}}}<span\; class="notranslate">\; =</span>\mathrm{<span\; class="notranslate">\; \&omega;</span>}\mathrm{<span\; class="notranslate">\; t</span>}<span\; class="notranslate">\; -</span>\frac{\mathrm{<span\; class="notranslate">\; 3</span>}\mathrm{<span\; class="notranslate">\; \&pi;</span>}}{\mathrm{<span\; class="notranslate">\; 2</span>}}<span\; class="notranslate">\; -</span>\frac{\mathrm{<span\; class="notranslate">\; \&pi;</span>}}{\mathrm{<span\; class="notranslate">\; 2</span>}}\mathrm{<span\; class="notranslate">\; c</span>}\mathrm{<span\; class="notranslate">\; o</span>}\mathrm{<span\; class="notranslate">\; the\; s</span>}\mathrm{<span\; class="notranslate">\; \&omega;</span>}\mathrm{<span\; class="notranslate">\; t</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; sin</span>}\mathrm{<span\; class="notranslate">\; \&omega;</span>}\mathrm{<span\; class="notranslate">\; t</span>}$

The output harmonic control network 7 connected in series at the signal output end adjusts the radio frequency power amplifier circuit to the second harmonic open circuit, and its corresponding harmonic component is only the voltage component, and the output harmonic control network 7 adjusts the radio frequency power amplifier circuit to the third harmonic Harmonic short-circuit, the corresponding harmonic components are only current components, and the parallel LC resonant output impedance matching network 8 connected in parallel at the signal output terminal transmits the output signal of the wide bandgap power device 3 to the terminal load impedance 9 in the maximum power transmission mode.

Figure 3 shows the waveform diagram of the drain voltage and current of the wide bandgap power device 3. When the wide bandgap power device 3 is in the closed state, the current passing through the parallel capacitor 6 is zero, and the voltage across the wide bandgap power device 3 is is zero, the current is composed of DC current and the load current passing through the wide bandgap power device 3; There is a voltage across 3, and the current flows through the shunt capacitor 6. At this time, there is no overlapping part between the output voltage and the current waveform of the wide bandgap power device 3 , so that the wide bandgap power device 3 does not have any power loss, thereby achieving the purpose of improving the efficiency of the radio frequency power amplifier circuit.

The embodiments of the invention have been presented for purposes of illustration and description, but are not intended to be exhaustive or to limit the invention to the forms disclosed. Many modifications and changes will be apparent to those of ordinary skill in the art. The embodiment was chosen and described in order to better illustrate the principle and practical application of the invention, and to enable those of ordinary skill in the art to understand the invention and design various embodiments with various modifications suitable for particular purposes.

Claims (6)

1. the high-efficiency radio-frequency power amplifier circuit based on wide-bandgap power devices, is characterized in that: comprising:

Sending-end impedance matching network, for carrying out the input impedance of described wide-bandgap power devices and source impedanceConjugate impedance match, realizes the maximum power transfer of input signal;

Wide-bandgap power devices, for completing the amplification to radiofrequency signal input power;

Output harmonic wave control network, for regulating three harmonic impedances, to first-harmonic and triple-frequency harmonics short circuit, rightSecond harmonic open circuit;

Output drain-source parasitic parameter compensating network, for the parametric compensation to transistor output parasitic parameter;

Output impedance matching network, for realizing power maximum transmitted by the impedance of tuning network;

Described sending-end impedance matching network is connected with the input of wide-bandgap power devices; Described output drain-sourceParasitic parameter compensating network is connected with the output of wide-bandgap power devices; Described output harmonic wave control networkInput is connected with the output of wide-bandgap power devices; The input of described output impedance matching network with described inOutput harmonic wave control network is connected.

2. the high-efficiency radio-frequency power amplifier electricity based on wide-bandgap power devices according to claim 1Road, is characterized in that: described wide-bandgap power devices is to adopt energy gap to be more than or equal to the semiconductor of 3.2eVThe power device of material, when this wide-bandgap power devices works on off state, the angle of flow is 50%.

3. the high efficiency radio-frequency power based on wide-bandgap power devices according to claim 1 and 2 amplifiesDevice circuit, is characterized in that: described sending-end impedance matching network, adopt be tuned in first-harmonic parallel connection or/andThe LC resonance circuit of series connection.

4. the high efficiency radio-frequency power based on wide-bandgap power devices according to claim 1 and 2 amplifiesDevice circuit, is characterized in that: described output harmonic wave control network using LC resonance circuit in parallel.

5. the high efficiency radio-frequency power based on wide-bandgap power devices according to claim 1 and 2 amplifiesDevice circuit, is characterized in that: described output drain-source parasitic parameter compensating network adopts shunt capacitance structure.

6. the high-efficiency radio-frequency power amplifier electricity based on wide-bandgap power devices according to claim 1Road, is characterized in that: output impedance matching networks adopts the parallel connection that is tuned in first-harmonic or/and the LC resonance of series connectionCircuit.