CN109950307A - Gallium nitride radio-frequency devices, parameter determination method and radio-frequency devices production method - Google Patents
Gallium nitride radio-frequency devices, parameter determination method and radio-frequency devices production method Download PDFInfo
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- CN109950307A CN109950307A CN201910245680.6A CN201910245680A CN109950307A CN 109950307 A CN109950307 A CN 109950307A CN 201910245680 A CN201910245680 A CN 201910245680A CN 109950307 A CN109950307 A CN 109950307A
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Abstract
Gallium nitride radio-frequency devices, parameter determination method and radio-frequency devices production method provided by the present application, are related to microelectronics technology.Wherein, gallium nitride radio-frequency devices include shell structure, gallium nitride transistor and impedance matching circuit.Impedance matching circuit includes conducting wire and at least two capacitors, and the impedance of the impedance matching circuit meets following preset condition: the real part of the impedance of fundamental frequency of the real part and gallium nitride transistor of the impedance of fundamental frequency of impedance matching circuit is all positive number, and the difference of two real parts is less than the first preset value, one in the imaginary part of the impedance of fundamental frequency of the imaginary part and gallium nitride transistor of the impedance of fundamental frequency of impedance matching circuit be positive number, another be negative, and the sum of two imaginary parts, less than the second preset value, the second harmonic impedance of impedance matching circuit is less than third preset value.By above-mentioned setting, the lower problem of the effective output of gallium nitride radio-frequency devices in the prior art can be improved.
Description
Technical field
This application involves microelectronics technologies, in particular to a kind of gallium nitride radio-frequency devices, parameter determination method
With radio-frequency devices production method.
Background technique
In a communications system, radio-frequency devices play an important role.Therefore, the performance of radio-frequency devices will have a direct impact on
The performance of entire communication system.For example, on the one hand output power that the harmonic component of radio-frequency devices will lead to the device reduces, separately
On the one hand other communication systems can be interfered.Wherein, gallium nitride radio-frequency devices are because of cutoff frequency with higher, thus
With complicated harmonic component.
Therefore, the harmonic component of gallium nitride radio-frequency devices how is effectively reduced to improve the effective output of device,
It is a technical problem to be solved urgently.
Summary of the invention
In view of this, the application's is designed to provide a kind of gallium nitride radio-frequency devices, parameter determination method and RF device
Part production method, the lower problem of effective output to improve gallium nitride radio-frequency devices in the prior art.
To achieve the above object, the embodiment of the present application adopts the following technical scheme that
A kind of gallium nitride radio-frequency devices, comprising:
Shell structure；
It is packaged in the gallium nitride transistor of the shell structure；
It is packaged in the impedance matching circuit of the shell structure, which includes conducting wire and at least two electricity
Hold, wherein one end of each capacitor is sequentially connected by conducting wire, the other end is grounded respectively, and each capacitor be sequentially connected after positioned at head end
Capacitor connect with the input pin for being set to the shell structure by conducting wire, the capacitor positioned at end pass through conducting wire with it is described
The grid of gallium nitride transistor connects；
Wherein, the impedance of the impedance matching circuit meets following preset condition: the fundamental wave resistance of the impedance matching circuit
The real part of the impedance of fundamental frequency of anti-real part and the gallium nitride transistor is all positive number, and the difference of two real parts is default less than first
One in the imaginary part of the impedance of fundamental frequency of value, the imaginary part of the impedance of fundamental frequency of the impedance matching circuit and the gallium nitride transistor
For positive number, another be negative, and the sum of two imaginary parts, less than the second preset value, the second harmonic of the impedance matching circuit hinders
It is anti-to be less than third preset value.
In the embodiment of the present application preferably selects, in above-mentioned gallium nitride radio-frequency devices, the inductance value base of the conducting wire
It is determined in the impedance of the impedance matching circuit, and the inductance that the sagitta parameter of the conducting wire and distance parameter are determined based on the conducting wire
Value determines.
In the embodiment of the present application preferably selects, in above-mentioned gallium nitride radio-frequency devices, the conducting wire is bonding gold wire.
In the embodiment of the present application preferably selects, in above-mentioned gallium nitride radio-frequency devices, the capacitor of each capacitor
The impedance being worth based on impedance matching circuit determines, and the dielectric constant of each capacitor and polar plate area are determined based on the capacitor
Capacitance determine.
In the embodiment of the present application preferably selects, in above-mentioned gallium nitride radio-frequency devices, each capacitor is single layer
Metal capacitance.
In the embodiment of the present application preferably selects, in above-mentioned gallium nitride radio-frequency devices, the capacitor is two, this two
Wherein one end of a capacitor is connected by the first conducting wire, one of capacitor connect by the second conducting wire with the input pin,
Another capacitor is connect by privates with the grid of the gallium nitride transistor.
The embodiment of the present application also provides a kind of parameter determination methods, for determining in gallium nitride radio-frequency devices to be produced
The impedance value of impedance matching circuit, the gallium nitride radio-frequency devices further include gallium nitride transistor to be packaged and the shell for encapsulation
Body structure, the parameter determination method include:
Obtain the impedance value of the gallium nitride transistor；
Impedance value based on preset condition and the gallium nitride transistor obtains the impedance value of the impedance matching circuit；
Wherein, the impedance matching circuit includes conducting wire and at least two capacitors, and wherein one end of each capacitor passes through conducting wire
Be sequentially connected, the other end is grounded respectively, and each capacitor be sequentially connected after be located at the capacitor of head end by conducting wire and be set to described
The input pin connection of shell structure, the capacitor positioned at end are connect by conducting wire with the grid of the gallium nitride transistor；
The preset condition includes: the real part and the gallium nitride transistor of the impedance of fundamental frequency of the impedance matching circuit
The real part of impedance of fundamental frequency is all positive number, and the difference of two real parts, less than the first preset value, the fundamental wave of the impedance matching circuit hinders
One in the imaginary part of the impedance of fundamental frequency of anti-imaginary part and the gallium nitride transistor be positive number, another be negative, and two
The sum of imaginary part is less than third preset value less than the second preset value, the second harmonic impedance of the impedance matching circuit.
In the embodiment of the present application preferably selects, determined in method in above-mentioned parameter, further includes:
Obtain the encapsulation parameter for encapsulating the shell structure of the gallium nitride radio-frequency devices；
Based on the encapsulation parameter and the impedance matching circuit impedance value determine the conducting wire sagitta parameter and away from
From parameter.
In the embodiment of the present application preferably selects, determined in method in above-mentioned parameter, further includes:
Obtain the encapsulation parameter for encapsulating the shell structure of the gallium nitride radio-frequency devices；
The dielectric constant of each capacitor is determined based on the impedance value of the encapsulation parameter and the impedance matching circuit
And polar plate area.
On the basis of the above, the embodiment of the present application also provides a kind of radio-frequency devices production methods, include nitrogen for making
Change the gallium nitride radio-frequency devices of gallium transistor and impedance matching circuit, the radio-frequency devices production method includes:
The parameter obtained based on above-mentioned parameter determination method makes corresponding impedance matching circuit；
The gallium nitride transistor and the impedance matching circuit are packaged in shell structure, obtain the gallium nitride radio frequency
Device.
Gallium nitride radio-frequency devices, parameter determination method and radio-frequency devices production method provided by the present application are wrapped by setting
The impedance matching circuit of at least two capacitors is included, and the impedance of impedance matching circuit is configured, so that the impedance matching is electric
The impedance of fundamental frequency of the impedance of fundamental frequency on road and gallium nitride transistor is close to conjugate impedance match, and the second harmonic impedance of impedance matching circuit
Close to zero, so that the harmonic component of gallium nitride radio-frequency devices power output is reduced by the radio frequency amplitude of oscillation voltage for reducing harmonic wave,
Improve the lower problem of effective (fundamental wave) output power of gallium nitride radio-frequency devices in the prior art in turn, greatly improves electricity
The utilization rate of energy.
To enable the above objects, features, and advantages of the application to be clearer and more comprehensible, preferred embodiment is cited below particularly, and cooperate
Appended attached drawing, is described in detail below.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of gallium nitride radio frequency provided by the embodiments of the present application.
Fig. 2 is the waveform tested the radio-frequency performance parameter of gallium nitride radio-frequency devices provided by the embodiments of the present application
Figure.
Fig. 3 is the schematic diagram of the parameter of conducting wire provided by the embodiments of the present application.
Fig. 4 is another schematic diagram of the parameter of conducting wire provided by the embodiments of the present application.
Fig. 5 is the flow diagram of radio-frequency devices production method provided by the embodiments of the present application.
Fig. 6 is the flow diagram of parameter determination method provided by the embodiments of the present application.
Fig. 7 is the circuit diagram of fundamental wave artificial circuit provided by the embodiments of the present application.
Fig. 8 is the circuit diagram of harmonic wave artificial circuit provided by the embodiments of the present application.
Fig. 9 is the flow diagram for other steps that parameter determination method provided by the embodiments of the present application includes.
Figure 10 is the flow diagram for other steps that parameter determination method provided by the embodiments of the present application includes.
Icon: 100- gallium nitride radio-frequency devices；110- shell structure；111- input pin；113- output pin；130- nitrogen
Change gallium transistor；150- impedance matching circuit；C1- first capacitor；The second capacitor of C2-；The first conducting wire of L1-；The second conducting wire of L2-；
L3- privates；210- net divides port circuit；230- encapsulates parasitic circuit；250- impedance matching equivalent circuit；270- gallium nitride
Transistor equivalent circuit；290- load equivalent circuit.
Specific embodiment
To keep the purposes, technical schemes and advantages of the embodiment of the present application clearer, below in conjunction with the embodiment of the present application
In attached drawing, the technical scheme in the embodiment of the application is clearly and completely described, it is clear that described embodiment only
It is a part of the embodiment of the application, instead of all the embodiments.The application being usually described and illustrated herein in the accompanying drawings
The component of embodiment can be arranged and be designed with a variety of different configurations.
Therefore, the detailed description of the embodiments herein provided in the accompanying drawings is not intended to limit below claimed
Scope of the present application, but be merely representative of the selected embodiment of the application.Based on the embodiment in the application, this field is common
Technical staff's every other embodiment obtained without creative efforts belongs to the model of the application protection
It encloses.
It should also be noted that similar label and letter indicate similar terms in following attached drawing, therefore, once a certain Xiang Yi
It is defined in a attached drawing, does not then need that it is further defined and explained in subsequent attached drawing.In the description of the present application
In, term " first ", " second ", " third " etc. are only used for distinguishing description, and should not be understood as only or imply relative importance.
In the description of the present application unless specifically defined or limited otherwise, term " setting ", " connected ", " connection " are answered
It is interpreted broadly, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can be mechanical connect
It connects, is also possible to be electrically connected；It can be directly connected, can also can be in two elements indirectly connected through an intermediary
The connection in portion.For the ordinary skill in the art, the tool of above-mentioned term in this application can be understood with concrete condition
Body meaning.
As shown in Figure 1, the embodiment of the present application provides a kind of gallium nitride radio-frequency devices 100, the gallium nitride radio-frequency devices 100
It may include shell structure 110, gallium nitride transistor 130 and impedance matching circuit 150.Wherein, the gallium nitride transistor 130
With the impedance matching circuit 150 connection post package in the shell structure 110, to form the gallium nitride radio-frequency devices 100.
In detail, input pin 111 and output pin 113 can be set in the shell structure 110, the gallium nitride is brilliant
Body pipe 130 has grid, drain electrode and source electrode, and the impedance matching circuit 150 may include conducting wire and at least two capacitors.Each institute
The wherein one end for stating capacitor is sequentially connected by conducting wire, the other end is grounded respectively, and each capacitor be sequentially connected after be located at head
The capacitor at end C1 as shown in Figure 1) it connect by conducting wire with the input pin 111 for being set to the shell structure 110, be located at end
The capacitor (C2 as shown in Figure 1) at end is connect by conducting wire with the grid of the gallium nitride transistor 130.
Wherein, effective (fundamental wave) output power and the reduction gallium nitride to guarantee the gallium nitride radio-frequency devices 100
The harmonic component of radio-frequency devices 100 can configure the impedance of the impedance matching circuit 150, for example, can make described
The impedance of fundamental frequency of the impedance of fundamental frequency of impedance matching circuit 150 and the gallium nitride transistor 130 meets the relationship of conjugate impedance match, and
Make the second harmonic impedance zero of the impedance matching circuit 150.
In view of certain application demand, can also make the impedance matching circuit 150 impedance of fundamental frequency and the nitridation
The impedance of fundamental frequency of gallium transistor 130 close to conjugate impedance match relationship, for example, the relationship may is that the impedance matching circuit
The real part of the impedance of fundamental frequency of the real part of 150 impedance of fundamental frequency and the gallium nitride transistor 130 is all positive number, and two real parts it
Difference is less than the first preset value, the base of the imaginary part of the impedance of fundamental frequency of the impedance matching circuit 150 and the gallium nitride transistor 130
One in the imaginary part of wave impedance be positive number, another be negative, and the sum of two imaginary parts are less than the second preset value.
Also, the second harmonic impedance of the impedance matching circuit 150 is also possible to close to zero, for example, the impedance
Second harmonic impedance with circuit 150 can be less than third preset value.
Wherein, the specific size of first preset value, second preset value and the third preset value is unrestricted,
It can be selected according to practical application request.For example, can be according to required precision and manufacturing cost in specific application
Equal requirements are determined.That is, in the higher application of required precision, first preset value, second preset value
It can be smaller with the third preset value.
In detail, in the example that one kind can substitute, first preset value can be 3, and second preset value can
Think 3, the third preset value can be 1.
By above-mentioned setting, it can be effectively reduced the harmonic component of the gallium nitride radio-frequency devices 100, improve device
Effective output.For example, in a specific example, with grid width be 32mm, grid length for 0.45um nitridation
Gallium transistor 130 carries out work in applying frequency for 1800-2200MHz and is tested, the available gallium nitride RF device
The radio-frequency performance parameter of part 100 can be as shown in Fig. 2 and following table:
Wherein, peak power output when P1dB refers to gain compression 1dB, P3dB refer to maximum when gain compression 3dB
Output power (is also saturation power).
By being analyzed upper table and data shown in Fig. 2 it is recognised that in the inelastic region that output power is P3dB
Domain, second harmonic can be suppressed to -30dBc (generally there was only -15dBc in existing device), also, in entire frequency band (1800-
Efficiency 2200MHz) can achieve 63% or more.
It should be noted that the drain electrode of the gallium nitride transistor 130 can draw with the output in the shell structure 110
Foot 113 connects.Also, other pins can also be set in the shell structure 110, for example, can be set for it is described
The pin of the source electrode connection of gallium nitride transistor 130.
Further, in the present embodiment, the impedance of the impedance matching circuit 150 may include the induction reactance of the conducting wire
With the capacitive reactance of at least two capacitor.That is, the inductance value of the conducting wire and the capacitance of each capacitor can be based on
The impedance of the impedance matching circuit 150 determines.
In detail, after the inductance value for determining the conducting wire, the relevant parameter of the conducting wire can be configured.Example
Such as, the inductance value of conducting wire as needed is different, can be set with different sagitta parameters (h1 as shown in Figure 3) and/or not
The conducting wire of same distance parameter (L1 as shown in Figure 3).
It should be noted that the sagitta parameter and distance parameter of the conducting wire also need to combine institute when the conducting wire is arranged
The encapsulation parameter of shell structure 110 is stated, for example, the volume of the shell structure 110.That is, in the shell structure 110
When volume is larger, sagitta parameter and distance parameter can be relatively large (as shown in Figure 3)；In the volume of the shell structure 110
When smaller, sagitta parameter and distance parameter can be relatively small (as shown in figure 4, L2 is less than L1, h2 is less than h1).
Similarly, after determining the capacitance of each capacitor, the relevant parameter of each capacitor can be configured.
For example, the capacitance of capacitor as needed is different, the capacitor with differing dielectric constant and/or polar plate area can be set.
It should be noted that the polar plate area of each capacitor is also required in conjunction with the shell when the capacitor is arranged
The encapsulation parameter of structure 110, for example, the volume of the shell structure 110.That is, the shell structure 110 volume compared with
When big, polar plate area can be relatively large；In the small volume of the shell structure 110, polar plate area can be relatively small.
Wherein, the polar plate area refers to the positive area of two electrodes of capacitor.The dielectric constant of the capacitor can be with
It is determined by specific manufacturing process, for example, the dielectric constant of the capacitor of formation can be 6.7 when using silicon technology；It is adopting
When with GaAs technology, the dielectric constant of the capacitor of formation can be 9.7.
Optionally, the concrete type of the conducting wire and the capacitor is unrestricted, can be carried out according to practical application request
Selection.It in the present embodiment, is the electric property for guaranteeing the impedance matching circuit 150, the conducting wire can be bonding gold wire,
Each capacitor can be single-layer metal capacitor.
Optionally, the particular number of the capacitor is unrestricted, can be selected according to practical application request.For example,
If only needing to inhibit second harmonic, two capacitors can be set；If also needing to inhibit triple-frequency harmonics, Ke Yishe
Set three capacitors.That is, the quantity of the capacitor can be determined based on the harmonic order number for needing to inhibit.
In the present embodiment, comprehensively consider the effect of the gallium nitride radio-frequency devices 100 whole volume and each order harmonics
Size, the impedance matching capacitances may include two capacitors and three conducting wires, and two capacitors are respectively first capacitor C1 and
Two capacitor C2, three conducting wires are respectively the first conducting wire L1, the second conducting wire L2 and privates L3.
In detail, wherein one end of two capacitors (first capacitor C1 and the second capacitor C2 as shown in Figure 1) passes through institute
State the first conducting wire L1 connection, the other end is grounded respectively, also, one of capacitor (first capacitor C1 as shown in Figure 1) passes through
The second conducting wire L2 is connect with the input pin 111, another capacitor (the second capacitor C2 as shown in Figure 1) is by described
Privates L3 is connect with the grid of the gallium nitride transistor 130.
In conjunction with Fig. 5, the embodiment of the present application also provides a kind of radio-frequency devices production method, can be used for making above-mentioned nitridation
Gallium radio-frequency devices 100.Wherein, the gallium nitride radio-frequency devices 100 may include shell structure 110,130 and of gallium nitride transistor
Impedance matching circuit 150, the radio-frequency devices production method may include step S110 and step S130, the following institute of particular content
It states.
Step S110, based on the corresponding impedance matching circuit 150 of parameter production obtained by executing parameter determination method.
In the present embodiment, the electricity of the impedance matching circuit 150 can be predefined by the parameter determination method
Gas parameter for example, may include, but is not limited to impedance value, based on inductance value and capacitance that the impedance value determines, and is based on
Sagitta parameter and distance parameter that the inductance value determines, the dielectric constant and polar plate area etc. determined based on the capacitance.
The gallium nitride transistor 130 and the impedance matching circuit 150 are packaged in shell structure 110 by step S130,
Obtain the gallium nitride radio-frequency devices 100.
In the present embodiment, after making by step S110 and to form the impedance matching circuit 150, step can be passed through
The gallium nitride transistor 130 that the impedance matching circuit 150 and pre-production are formed is packaged in the shell structure by rapid S130
110, thus obtain include the shell structure 110, gallium nitride transistor 130 and impedance matching circuit 150 gallium nitride radio frequency
Device 100.
Wherein, since the electric parameter of the impedance matching circuit 150 is determined by the parameter determination method, institute
The impedance for stating impedance matching circuit 150 meets following preset condition: the real part of the impedance of fundamental frequency of the impedance matching circuit 150 with
The real part of the impedance of fundamental frequency of the gallium nitride transistor 130 is all positive number, and the difference of two real parts is less than the first preset value, described
One in the imaginary part of the impedance of fundamental frequency of the imaginary part of the impedance of fundamental frequency of impedance matching circuit 150 and the gallium nitride transistor 130
For positive number, another be negative, and the sum of two imaginary parts are less than the second preset value, the impedance matching circuit 150 it is secondary humorous
Wave impedance is less than third preset value.Thus, the harmonic component of the power output of the gallium nitride radio-frequency devices 100 is smaller, can
It is effectively reduced the influence to other communication equipments, and effectively (fundamental wave) output power with higher.
In conjunction with Fig. 6, the embodiment of the present application also provides a kind of parameter determination method.Wherein, which can answer
For above-mentioned radio-frequency devices production method, to obtain the impedance matching circuit 150 of gallium nitride radio-frequency devices 100 to be produced
Electric parameter.In detail, the parameter determination method may include step S210 and step S230, and particular content is as described below.
Step S210 obtains the impedance value of the gallium nitride transistor 130.
In the present embodiment, the gallium nitride transistor 130 that gallium nitride radio-frequency devices 100 to be produced need can first be obtained
Impedance value, which may include equivalent capacitance value and equivalent resistance.For example, in the gallium nitride transistor 130
When the length of grid is 0.45um, width is 32mm, the equivalent capacitance value of the gallium nitride transistor 130 can be 72pF, equivalent
Resistance value can be 0.8 Ω.
Step S230, the impedance value based on preset condition and the gallium nitride transistor 130 obtain the impedance matching electricity
The impedance value on road 150.
It in the present embodiment, can be with base after obtaining the impedance value of the gallium nitride transistor 130 by step S210
The impedance value of the impedance matching circuit 150 is obtained in the impedance value and the preset condition.
Wherein, the preset condition may include: the real part and the nitrogen of the impedance of fundamental frequency of the impedance matching circuit 150
The real part for changing the impedance of fundamental frequency of gallium transistor 130 is all positive number, and the difference of two real parts is less than the first preset value, the impedance
One in the imaginary part of the impedance of fundamental frequency of the imaginary part of impedance of fundamental frequency with circuit 150 and the gallium nitride transistor 130 be positive number,
Another is negative, and the sum of two imaginary parts, less than the second preset value, the second harmonic impedance of the impedance matching circuit 150 is small
In third preset value.
Also, it is unrestricted by the concrete mode that step S230 obtains the impedance value of the impedance matching circuit 150, it can
To be selected according to practical application request.For example, can be by constructing corresponding artificial circuit, and pass through and emulated to obtain
Meet the impedance value of the preset condition.
In detail, in conjunction with Fig. 7, the embodiment of the present application provides a kind of fundamental wave artificial circuit, which can be with
Divide port circuit 210, encapsulation parasitic circuit 230, impedance matching equivalent circuit 250 and gallium nitride transistor equivalent circuit including net
270。
Wherein, when being emulated, port circuit 210 can be divided to input a fundamental signal by the net, and successively lead to
It crosses after the encapsulation parasitic circuit 230 and the impedance matching equivalent circuit 250, it is equivalent to be transmitted to the gallium nitride transistor
Circuit 270.
Further, in conjunction with Fig. 8, the embodiment of the present application also provides a kind of harmonic wave artificial circuit, the harmonic wave artificial circuits
It may include load equivalent circuit 290 (for avoiding the side ports hanging), encapsulation parasitic circuit 230, the equivalent electricity of impedance matching
Road 250 and net divide port circuit 210.
Wherein, when being emulated, the harmonic signal of generation can be inputted from the load equivalent circuit 290, then, according to
It is secondary by the encapsulation parasitic circuit 230 and the impedance matching equivalent circuit 250 after, divide port circuit 210 from the net
Output.
It should be noted that the net divides port circuit 210, the encapsulation when carrying out above-mentioned fundamental wave or harmonic wave emulates
The design parameter of parasitic circuit 230, the gallium nitride transistor equivalent circuit 270 and the load equivalent circuit 290 is determining, so
It afterwards, can be by adjusting the parameter of the impedance matching equivalent circuit 250, so that dividing port circuit 210 to detect by the net
The fundamental wave and second harmonic meet demand arrived.
For example, can be in specific example in one kind, the net divides the impedance value of port circuit 210 that can be 50 Ω, institute
State encapsulation parasitic circuit 230 two inductance inductance value can all be 40pH, capacitor capacitance can be 33pF, the nitrogen
The resistance value for changing the resistance of gallium transistor equivalent circuit 270 can be able to be 72pF for the capacitance of 0.8 Ω, capacitor, described negative
The resistance value for carrying the resistance of equivalent circuit 290 (can be determined) for 50 Ω based on the characteristic impedance of radio frequency system.
After constructing above-mentioned fundamental wave artificial circuit and harmonic wave artificial circuit, the fundamental wave artificial circuit and harmonic wave can be based on
Artificial circuit is emulated respectively.For example, when carrying out harmonic wave emulation by the radiofrequency signal of 3.6-4.4GHz, it is available not
Same harmonic impedance, shown in table specific as follows:
Also, by carrying out corresponding harmonic wave emulation to gallium nitride radio-frequency devices 100 in the prior art, it is available such as
Harmonic impedance shown in following table:
| Freq(GHz) | Zin(Ω) |
| 3.600 | 0.123+j4.026 |
| 3.700 | 0.120+j4.248 |
| 3.800 | 0.117+j4.467 |
| 3.900 | 0.114+j4.683 |
| 4.000 | 0.112+j4.897 |
| 4.100 | 0.110+j5.109 |
| 4.200 | 0.109+j5.320 |
| 4.300 | 0.108+j5.528 |
| 4.400 | 0.107+j5.735 |
By being compared and analyzed to the harmonic impedance in above-mentioned two table, it is recognised that gallium nitride provided by the present application is penetrated
The corresponding harmonic impedance of frequency device 100 harmonic impedance corresponding with existing gallium nitride radio-frequency devices 100 is not in a quantity
Grade, hence it is evident that be less than the corresponding harmonic impedance of existing gallium nitride radio-frequency devices 100.That is, passing through ginseng provided by the present application
Number determines that method can have lower harmonic component when carrying out power output with the gallium nitride radio-frequency devices 100 made, thus,
Has higher effective output.
Further, after obtaining the impedance value of the impedance matching circuit 150 by step S230, for convenient for effective
Ground carries out the production of impedance matching circuit 150, can also inductance value (inductance value of conducting wire) to the impedance matching circuit 150 and
Capacitance (capacitance of capacitor) is determined, and based on determining inductance value and capacitance to the design parameter of conducting wire and capacitor
It is determined.Therefore, in conjunction with Fig. 9, the parameter determination method can also include step S240 and step S250, described in determination
The sagitta parameter and distance parameter of conducting wire.
Step S240 obtains the encapsulation parameter for encapsulating the shell structure 110 of the gallium nitride radio-frequency devices 100.
In the present embodiment, specific application environment for the gallium nitride radio-frequency devices 100 that can first make as needed etc. because
Element determines the volume of the gallium nitride radio-frequency devices 100, then, the encapsulation parameter of the shell structure 110 is determined according to the volume
(such as volume).
Step S250 determines the conducting wire based on the impedance value of the encapsulation parameter and the impedance matching circuit 150
Sagitta parameter and distance parameter.
In the present embodiment, after obtaining the encapsulation parameter of the shell structure 110 by step S240, can be based on should
The impedance value of encapsulation parameter and the impedance matching circuit 150 determines the sagitta parameter and distance parameter of the conducting wire.
For example, after the numerical value of sagitta parameter reaches the maximum value of encapsulation, it can be by increasing distance parameter to improve
The inductance value of conducting wire, to improve the induction reactance of the impedance matching circuit 150；In other words, reach envelope in the numerical value of distance parameter
It, can be by increasing sagitta parameter to improve the inductance value of conducting wire, to improve the impedance matching electricity after the maximum value of dress
The induction reactance on road 150.
Similarly, in conjunction with Figure 10, the parameter determination method can also include step S240 and step S260, each to determine
The dielectric constant and polar plate area of the capacitor.
Step S240 obtains the encapsulation parameter for encapsulating the shell structure 110 of the gallium nitride radio-frequency devices 100.
Step S260 determines each electricity based on the impedance value of the encapsulation parameter and the impedance matching circuit 150
The dielectric constant and polar plate area of appearance.
In the present embodiment, after obtaining the encapsulation parameter of the shell structure 110 by step S240, can be based on should
The impedance value of encapsulation parameter and the impedance matching circuit 150 determines the dielectric constant and polar plate area of the capacitor.
For example, can pass through after the numerical value of dielectric constant reaches the maximum value for the technique for making capacitor and increase pole plate
Area is to improve the capacitance of capacitor, to improve the capacitive reactance of the impedance matching circuit 150；In other words, in polar plate area
It, can be by increasing dielectric constant to improve the capacitance of capacitor, thus described in improving after numerical value reaches the maximum value of encapsulation
The capacitive reactance of impedance matching circuit 150.
In conclusion gallium nitride radio-frequency devices 100 provided by the present application, parameter determination method and radio-frequency devices production side
Method by the way that the impedance matching circuit 150 including at least two capacitors is arranged, and matches the impedance of impedance matching circuit 150
It sets, so that the impedance of fundamental frequency of the impedance of fundamental frequency of the impedance matching circuit 150 and gallium nitride transistor 130 is close to conjugate impedance match, and
The second harmonic impedance of impedance matching circuit 150 is close to zero, thus by the radio frequency amplitude of oscillation voltage for reducing harmonic wave to reduce nitridation
The harmonic component of 100 power output of gallium radio-frequency devices, and then improve effective (base of gallium nitride radio-frequency devices 100 in the prior art
Wave) the lower problem of output power, greatly improve the utilization rate of electric energy.
The foregoing is merely preferred embodiment of the present application, are not intended to limit this application, for the skill of this field
For art personnel, various changes and changes are possible in this application.Within the spirit and principles of this application, made any to repair
Change, equivalent replacement, improvement etc., should be included within the scope of protection of this application.
Claims (10)
1. a kind of gallium nitride radio-frequency devices characterized by comprising
Shell structure；
It is packaged in the gallium nitride transistor of the shell structure；
It is packaged in the impedance matching circuit of the shell structure, which includes conducting wire and at least two capacitors, respectively
Wherein one end of capacitor is sequentially connected by conducting wire, the other end is grounded respectively, and each capacitor be sequentially connected after be located at head end electricity
Appearance is connect by conducting wire with the input pin for being set to the shell structure, the capacitor positioned at end passes through conducting wire and the nitridation
The grid of gallium transistor connects；
Wherein, the impedance of the impedance matching circuit meets following preset condition: the impedance of fundamental frequency of the impedance matching circuit
The real part of the impedance of fundamental frequency of real part and the gallium nitride transistor is all positive number, and the difference of two real parts is less than the first preset value,
The imaginary part of the impedance of fundamental frequency of the impedance matching circuit is with one in the imaginary part of the impedance of fundamental frequency of the gallium nitride transistor
Positive number, another be negative, and the sum of two imaginary parts are less than the second preset value, the second harmonic impedance of the impedance matching circuit
Less than third preset value.
2. gallium nitride radio-frequency devices according to claim 1, which is characterized in that the inductance value of the conducting wire is based on the resistance
The impedance of anti-match circuit determines, and the sagitta parameter of the conducting wire and distance parameter are determined based on the inductance value that the conducting wire determines.
3. gallium nitride radio-frequency devices according to claim 2, which is characterized in that the conducting wire is bonding gold wire.
4. gallium nitride radio-frequency devices according to claim 1, which is characterized in that the capacitance of each capacitor is based on resistance
The impedance of anti-match circuit determines, and the capacitance that the dielectric constant of each capacitor and polar plate area are determined based on the capacitor
It determines.
5. gallium nitride radio-frequency devices according to claim 4, which is characterized in that each capacitor is single-layer metal electricity
Hold.
6. gallium nitride radio-frequency devices described in -5 any one according to claim 1, which is characterized in that the capacitor is two,
Wherein one end of two capacitors is connected by the first conducting wire, and one of capacitor is connected by the second conducting wire and the input pin
It connects, another capacitor is connect by privates with the grid of the gallium nitride transistor.
7. a kind of parameter determination method, which is characterized in that for determining gallium nitride radio-frequency devices middle impedance matching electricity to be produced
The impedance value on road, the gallium nitride radio-frequency devices further include gallium nitride transistor to be packaged and the shell structure for encapsulation, institute
Stating parameter determination method includes:
Obtain the impedance value of the gallium nitride transistor；
Impedance value based on preset condition and the gallium nitride transistor obtains the impedance value of the impedance matching circuit；
Wherein, the impedance matching circuit includes conducting wire and at least two capacitors, and wherein one end of each capacitor passes through conducting wire successively
Connection, the other end are grounded respectively, and each capacitor be sequentially connected after be located at the capacitor of head end by conducting wire and being set to the shell
The input pin connection of structure, the capacitor positioned at end are connect by conducting wire with the grid of the gallium nitride transistor；
The preset condition includes: the real part of the impedance of fundamental frequency of the impedance matching circuit and the fundamental wave of the gallium nitride transistor
The real part of impedance is all positive number, and the difference of two real parts is less than the first preset value, the impedance of fundamental frequency of the impedance matching circuit
One in the imaginary part of the impedance of fundamental frequency of imaginary part and the gallium nitride transistor be positive number, another be negative, and two imaginary parts
The sum of less than the second preset value, the second harmonic impedance of the impedance matching circuit is less than third preset value.
8. parameter determination method according to claim 7, which is characterized in that further include:
Obtain the encapsulation parameter for encapsulating the shell structure of the gallium nitride radio-frequency devices；
The sagitta parameter of the conducting wire is determined and apart from ginseng based on the impedance value of the encapsulation parameter and the impedance matching circuit
Number.
9. parameter determination method according to claim 7, which is characterized in that further include:
Obtain the encapsulation parameter for encapsulating the shell structure of the gallium nitride radio-frequency devices；
Dielectric constant and the pole of each capacitor are determined based on the impedance value of the encapsulation parameter and the impedance matching circuit
Plate suqare.
10. a kind of radio-frequency devices production method is penetrated for making the gallium nitride including gallium nitride transistor and impedance matching circuit
Frequency device, which is characterized in that the radio-frequency devices production method includes:
The parameter obtained based on parameter determination method described in claim 7-9 any one makes corresponding impedance matching electricity
Road；
The gallium nitride transistor and the impedance matching circuit are packaged in shell structure, obtain the gallium nitride RF device
Part.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112671345A (en) * | 2020-12-16 | 2021-04-16 | 宁波铼微半导体有限公司 | Signal processing module, gallium nitride frequency tripling circuit and circuit design method |
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