CN206620103U - A kind of high efficiency parallel connection type E is against F power-like amplifier match circuits - Google Patents
A kind of high efficiency parallel connection type E is against F power-like amplifier match circuits Download PDFInfo
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- CN206620103U CN206620103U CN201720389963.4U CN201720389963U CN206620103U CN 206620103 U CN206620103 U CN 206620103U CN 201720389963 U CN201720389963 U CN 201720389963U CN 206620103 U CN206620103 U CN 206620103U
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Abstract
A kind of high efficiency parallel connection type E is located between transistor output and load impedance against F power-like amplifier match circuits, parallel connection type E against F classes circuit, and parallel connection type E power-like amplifiers are by L, C in parallel and the L of series connection0、C0Composition, inverse F classes higher hamonic wave control circuit is by the L that connectsn、CnComposition, biased electrical routing power VbbTo the circuit and power supply V of transistor baseccCircuit to transistor collector is constituted, and power amplification structure is the power tube of common emitter, and the input of power tube is base stage, and output end is colelctor electrode；The match circuit is on the premise of boundary condition of the classics E power-like amplifiers when off state is switched to conducting state is met, introduce the higher hamonic wave control circuit of inverse F classes, so as to while effectively high efficiency power amplifier is realized, requirement of the transistor for breakdown voltage is reduced, the effect that E power-like amplifiers are utilized in wider scope has been reached；And other power amplifiers will be big compared to E classes for its power output capacity.
Description
Technical field
The utility model is related to radio communication power amplifier technology field, more particularly to a kind of high efficiency parallel connection type E is against F class power
Amplifier.
Background technology
At present, with the further development of GSM, power amplifier has been widely used in communication system,
The current communications field, as portable cellular terminal, the reduction of base station equidimension and the reduction of weight and forth generation move logical
The use of letter system, communication system is to efficiency power amplifier and linearity more and more higher.Therefore high efficiency power amplification
Device can turn into the crucial of future communications terminal and constitute part, and the design of high efficiency power amplifier will also turn into power amplifier research
The focus in field.In efficiency power amplifier, switching mode E power-like amplifiers are a wherein most basic classes.
E power-like amplifiers undergo conducting and cut-off state in turn because of transistor, by reducing transistor current and voltage
Overlapping degree reduces the consumption power of transistor in itself, so as to can reach 100% efficiency in theory.Classical E classes
Power amplifier is several by transistor, shunt capacitance, the series LC resonant circuit of fundamental wave, the residual induction of series connection and biasing circuit
Module composition.Physical circuit is as shown in Figure 1.Classical E power-like amplifiers are switched to conducting shape by meeting in off state
Boundary condition during state, i.e.,：ZVT and the conversion of no-voltage derivative so that transistor current is with voltage overlapping degree
Zero, to reach theoretical efficiency 100%.
The parallel type E power-like amplifiers proposed by Grebennikov, have followed the height of switch power-like amplifier
Efficiency feature.Its circuit structure is by transistor, parallel LC circuit, the series LC resonant circuit of fundamental wave and the several modules of biasing circuit
Constitute.Physical circuit is as shown in Figure 2.Its principle is consistent with classical E power-like amplifiers, equally to meet and be cut in off state
Change to boundary condition during conducting state.But compared to classical E power-like amplifiers, parallel connection type E power-like amplifiers for
The breakdown current of transistor requires lower, maximum carrier frequency is higher, thus parallel connection type E power-like amplifiers are designed to one
Individual popular research field.
For classical E power-like amplifiers, document [1] has carried out deriving and rational explanation to it, successfully by E classes
Power amplifier is brought into the visual field of people.And in recent years, the research of parallel connection type E power-like amplifiers also quietly starts to walk.Document
[2] basic structure of parallel connection type E power-like amplifiers is proposed.And to propose E power-like amplifiers in parallel new for document [3]
Topological structure, the research for E power-like amplifiers in parallel provides new approaches.Document [4] proposes E against F power-like amplifiers
Structure, provide theoretical foundation for the utility model.
【Bibliography】
[1] F. H. Raab, " Idealized Operation of the Class E Tuned Power
Amplifier, " IEEE Trans. Circuits and Systems, Vol. CAS-24, pp. 725-735, Dec.
1977。
[2] A. Grebennikov and H. Jaeger, " Class E with parallel circuit-A
New challenge for high-efficiency RF and microwave power amplifiers, " in
IEEEMTT-S Int. Microw. Symp. Dig., 2002, vol. 3, pp. 1627-1630.
[3] Jesus Cumana and Andrei Grebennikov, " An Extended Topology of
Parallel-CircuitClass-E Power Amplifier to Account for Larger Output
Capacitances " IEEE Transactionson Microwave Theory and Techniques, vol. 59,
No. 12, Dec. 2011.
[4] A. Grebennikov, " High-Efficiency Class E/F Lumped
andTransmission-Line Power Amplifiers” IEEE Transactionson Microwave Theory
And Techniques, vol. 59, no. 6, Dec. 2011.
The content of the invention
For problems of the prior art, the utility model combines parallel connection type E classes power amplifier and classical inverse F classes work(
The structure of rate amplifier, innovative proposes a kind of while having parallel connection type E power-like amplifiers and inverse F power-like amplifiers
The E of impedance conditions is meeting classics E power-like amplifiers when off state is switched to conducting state against F power amplifiers
On the premise of boundary condition, the higher hamonic wave control circuit of inverse F classes is introduced, so as to effectively realize high efficiency power amplifier
While, requirement of the transistor for breakdown voltage is reduced, the effect that E power-like amplifiers are utilized in wider scope has been reached
Really；And other power amplifiers will be big compared to E classes for its power output capacity.
A kind of high efficiency parallel connection type E is against F power-like amplifier match circuits, and its theory diagram is as shown in Figure 3.Transistor is defeated
Going out end includes：Parallel connection type E power-like amplifiers circuit, inverse F classes higher hamonic wave control circuit and transistor bias circult.It is described simultaneously
Connection type E is located between transistor output and load impedance against F classes circuit, and described parallel connection type E power-like amplifiers are by parallel connection
LC and series connection L0、C0Composition.Described inverse F classes higher hamonic wave control circuit is by the L that connectsn、CnComposition.Described biasing
Electric routing power VbbTo the circuit and power supply V of transistor baseccCircuit to transistor collector is constituted.The power amplification
Structure is the power tube of common emitter, and the input of the power tube is base stage, and output end is colelctor electrode.
Classical parallel connection type E is as shown in Figure 3 against F power amplifier circuits.Laod network is by shunt inductance L, shunt capacitance
C, the series connection L for nth harmonic resonancenCnThe series connection L of circuit, fundamental wave0C0Resonance circuit, load R are constituted.Here, transistor quilt
Regard a perfect switch switched under shut-off to conducting state as.Therefore, when switch is in open-circuit condition, transistor current collection
Pole tension waveform is determined by the of short duration response of laod network.
Here, for easy analysis, we have following several hypothesis：
The knee-point voltage of transistor is zero, and resistance during saturation is zero, and resistance during shut-off is infinity.And crystal
Pipe is considered as lossless and transient change switch.
Shunt capacitance C is linear.
The resonance circuit connected is under nth harmonic, and impedance is zero；Under other harmonic waves, impedance is infinity.
Whole circuit is lossless in addition to load.
Connect L0C0Resonance circuit is tuned under fundamental frequency, and its quality factor is sufficiently large.
The transistor switch condition of classical E power-like amplifiers can be write as：
Here voltage refers to the voltage of switch ends.
Flow through the electric current i of loadRWith the electric current i of nth harmonicnIt is sine wave, therefore can be written to：
Here, IRIt is the amplitude of electric current under fundamental frequency, InIt is the amplitude of electric current under nth harmonic,It is the first phase of electric current
Position.
When switch is opened in 0≤ω t≤π, the voltage v of switch ends and the electric current i for flowing through shunt capacitanceCAll etc.
In zero.Therefore, v (ω t)=Vdd – vL(ω t)=0, and iC(ωt) = ωC[dv(ωt)/d(ωt)] = 0.So stream
Load current i can be written to by crossing the electric current of switchR(ω t), nth harmonic electric current inElectric current i on (ω t) and inductanceL(ωt)
Sum, i.e.,：
For initial opening, i (0)=0.In ω t=0, DC feedback inductance L electric current i is flowed throughL(ω
T) it can be write as
Therefore：
For arbitrary n, its harmonic current InAmplitude can be written to：
Here：
Therefore, the electric current I of nth harmonicnWith the electric current I under fundamental frequencyRRatio can be written to:
When switch is off state in the π of π≤ω t≤2, the electric current i (ω t) for flowing through switch is equal to zero.And flow
Cross the electric current i of shunt capacitanceC(ω t) can be expressed as the electric current i on inductanceLElectric current i on (ω t), nth harmonic circuitn(ω
T) with the electric current i in loadR(ω t) sum, i.e.,：
According to primary condition v (π)=0 He.Above-mentioned equation can be expressed as second order
Nonlinear differential equation：
Its general solution form can be write as：
Here
Coefficient C1And C2It can be tried to achieve by ω t=π boundary condition.
Direct current supply voltage VddIt can be expressed as（13）Fourier expansion formula：
Because the drain voltage under fundamental frequency is added in load completely, therefore its reaction component is necessary for 0, i.e.,：
Therefore, for specific triple-frequency harmonics tuning circuit, i.e. n=3.Pass through（1）,（15）With（16）, we are solvable
The value of three unknown parameters therein：
In Fig. 4 (a)-(e), when ω t are in [π, 2 π], normalization of the ideal paralle type E against F3 type power amplifiers
Drain voltage, drain current, the electric current for flowing through electric capacity, the electric current and load current for flowing through 3 subharmonic are demonstrated out.From leakage
The waveform of pole tension and drain current can be seen that：When the transistor is switched, there is no any voltage on switch, and flow through switch
Electric current by DC current, triple harmonic current, load current is constituted.However, when transistor is off state, Suo You electricity
Stream flows to shunt capacitance.In this case, drain voltage and electric current will not produce it is overlapping, therefore preferably drain efficiency be
100%。
Flow through the electric current i under the fundamental frequency of switch1(ω t) can be made up of two quadrature components, iRAnd iX.Its is equivalent
Circuit is as shown in Figure 5.Their amplitude can be tried to achieve by Fourier expansion：
Therefore, the angle of the voltage of switch ends and electric current can be expressed as under fundamental frequency
On the other hand, phase angle can be expressed as the function of load elements, i.e.,：
Therefore, shunt inductance and shunt capacitance can be obtained：
Meanwhile, load R can also direct current supply voltage VddWith power output PoutShow：
In addition, the circuit parameter selection of series resonant circuit depends on the quality factor q of loadL, and his value gets over
It is big better.Therefore, circuit parameter can be obtained：
Peak drain voltage and drain current can pass through（5）、（13）、（14）、（17）-（19）Try to achieve：
Parallel connection type E is against F as can be seen from the above equation3Power amplifier crest voltage is compared to classical E power-like amplifiers
Crest voltage, have dropped 13.4%.
The performance indications of another power amplifier-power output capacity cp, Ke Yiyong（28）With（29）Show
Maximum operating frequency fmaxIt can pass through（25）Obtain, C here should be the output capacitance C of deviceout
His value is classical E power-like amplifiers fmax1.38 times.
Specific classics E classes power amplifier, parallel connection type E classes power amplifier, E are against F3Type power amplifier and parallel connection type E are against F3The comparison of class power amplifier
| High efficiency power amplifier type | V dd/V max | I max/I 0 | c p | K f |
| Classical E power-like amplifiers | 3.56 | 2.84 | 0.0981 | 0.0506 |
| E power-like amplifiers in parallel | 3.647 | 2.647 | 0.1036 | 0.0798 |
| E is against F3Power amplifier | 3.142 | 3.056 | 0.1041 | 0.0506 |
| Parallel connection type E is against F3 power amplifiers | 3.279 | 2.915 | 0.1046 | 0.0698 |
As shown above.
A kind of high efficiency parallel connection type E is improved against F power-like amplifiers match circuit to E power-like amplifiers in parallel,
Creative proposes a kind of new structure, efficient in maintained switch power-like amplifier by adding the circuit structure of inverse F classes
While rate advantage, the breakdown voltage of transistor is not only caused to require lower, and maximum carrier frequency is higher, effectively improves
The performance of circuit, to provide possibility using power amplifier in wider scope.
Brief description of the drawings
Fig. 1 is the circuit theory diagrams of classical E power-like amplifiers；
Fig. 2 is a kind of theory diagram of high efficiency parallel connection type E power-like amplifiers；
Fig. 3 is a kind of theory diagrams of high efficiency parallel connection type E against F power-like amplifiers；
Fig. 4（a）It is normalization drain voltage waveform figures of the ideal paralle type E against F3 type power amplifiers；
Fig. 4（b）It is ideal paralle type E against F3 type power amplifier drain current wavefonn figures；
Fig. 4（c）It is the current waveform figure that ideal paralle type E flows through electric capacity against F3 type power amplifiers；
Fig. 4（d）It is the current waveform figure that ideal paralle type E flows through 3 subharmonic against F3 type power amplifiers；
Fig. 4（e）It is ideal paralle type E against F3 type power amplifier load current waveform figures；
Fig. 5 is a kind of high efficiency parallel connection type E against equivalent circuit diagram under the conditions of the fundamental wave of F power-like amplifiers；
Fig. 6 be by microstrip line to parallel connection type E against F3 power amplifier embodiments circuit diagram；
Fig. 7（a）It is the circuit structure that laod network is seen into from drain electrode under triple-frequency harmonics；
Fig. 7（b）It is the circuit structure that laod network is seen into from drain electrode under second harmonic；
Fig. 7（c）It is the circuit structure that laod network is seen into from drain electrode under fundamental wave.
Embodiment
For clearer explanation the technical solution of the utility model, with reference to the accompanying drawings and examples to the utility model
It is described further.For those of ordinary skill in the art, on the premise of not paying creative work, can also basis
These accompanying drawings obtain other accompanying drawings.
Derived according to above-mentioned theory, we are flashed using microstrip line.Physical circuit figure is as indicated with 6.Transmission line TL1-TL4Group
Into harmonic controling circuit, transmission line TL5-TL6Constitute impedance of fundamental frequency match circuit.For easy analysis, it will be assumed that all
The characteristic impedance of transmission line is Z0。
Fig. 7（a）Represent under triple-frequency harmonics, the circuit structure that laod network is seen into from drain electrode.Due to open stub
TL2Impedance under triple-frequency harmonics is zero, and short-circuit condition is presented.So Znet(3 ω 0)=0, meets laod network triple-frequency harmonics
Condition.
Fig. 7（b）Represent under second harmonic, the circuit structure that laod network is seen into from drain electrode.Due to closed stub
TL2Impedance under second harmonic is zero, and short-circuit condition is presented.Meanwhile, transmission line TL1、TL2Resonance is constituted under second harmonic,
So that its general performance is open-circuit condition.So, equivalent circuit only has transmission line TL3.Therefore, transmission line TL3Under second harmonic
Impedance can be expressed as：
On the other hand, according to schematic diagram 3, under second harmonic, from the laod network seen that drains by LC parallel circuit groups
Into its impedance can be expressed as：
Therefore, simultaneous（24）、（25）、（2）, the impedance of laod network is equal under second harmonic：
Here,.Pass through simultaneous（1）With（3）, transmission line TL3Electrical length can be expressed as：
Here k takes appropriate value to causeTake minimum on the occasion of.
Fig. 7（c）Represent under fundamental wave, the circuit structure that laod network is seen into from drain electrode.Due to closed stub TL2
Impedance under fundamental wave is zero, and short-circuit condition is presented, therefore equivalent circuit is i.e. such as Fig. 7（c）It is shown.
First, according to schematic diagram 3, under the conditions of fundamental wave, from the laod network seen into that drains by RLC parallel circuit groups
Into.Therefore laod networkIt can be expressed as：
Here, simultaneous（24）、（25）With（5）, fundamental wave laod networkIt can be expressed as:
Therefore：
Secondly, from reference planes V1The admittance for the fundamental wave laod network seenTL can be passed through1、TL2WithObtain：
Here k is equal to：
Therefore, from reference planes V1The impedance for the fundamental wave laod network seenIt can be expressed as：
Since from reference planes V1The impedance for the fundamental wave laod network seenObtain, it is clear that from reference
Plane V2The impedance for the fundamental wave laod network seenCan be byAnd TL3Obtain：
Therefore, according to（11）From reference planes V2The impedance for the fundamental wave laod network seenIt can be expressed as：
And basis（10）With（12）, from reference planes V2The impedance for the fundamental wave laod network seenCan be with table
It is shown as：
Here, whenBy（4）After decision, R2And X2Value also can determine that.
Finally, no matter X2Value be just or negative, fundamental wave laod networkIt always can be by L-type transmission line
TL5And TL6Realize the impedance matching to 50 ohm.
In actual design, transistor selects model Cree CGH40010F 10 W GaN HEMT transistors.It is right
The concrete numerical value for the parasitic component that the transistor is provided by manufacturer is as follows：Parasitic capacitance C between transistor drain and source electrodeds
=1.2 pF, stray inductance Ld=0.55 nH, encapsulation parasitic capacitance Cp = 0.2 pF。
Claims (3)
1. a kind of high efficiency parallel connection type E is against F power-like amplifier match circuits, it is characterised in that：Transistor output includes：And
Connection type E power-like amplifiers circuit, inverse F classes higher hamonic wave control circuit and transistor bias circult；The parallel connection type E is against F classes
Circuit is located between transistor output and load impedance.
2. a kind of high efficiency parallel connection type E is against F power-like amplifier match circuits according to claim 1, it is characterised in that：Institute
The parallel connection type E power-like amplifiers stated are by L, C in parallel and the L of series connection0、C0Composition；Described inverse F classes higher hamonic wave control electricity
It route the L of series connectionn、CnComposition；Described biased electrical routing power VbbTo the circuit and power supply V of transistor baseccTo transistor
The circuit composition of colelctor electrode；The power amplification structure is the power tube of common emitter, and the input of the power tube is base stage, defeated
It is colelctor electrode to go out end.
3. a kind of high efficiency parallel connection type E is against F power-like amplifier match circuits according to claim 1, it is characterised in that：It is negative
Contained network network is by shunt inductance L, shunt capacitance C, the series connection L for nth harmonic resonancenAnd CnThe series connection L of circuit, fundamental wave0And C0It is humorous
Shake circuit, load R constitute；Transistor is seen as a perfect switch switched under shut-off to conducting state；When switch is in
During open-circuit condition, transistor collector voltage waveform is determined by the of short duration response of laod network.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108736845A (en) * | 2017-04-14 | 2018-11-02 | 天津大学（青岛）海洋工程研究院有限公司 | A kind of high efficiency parallel connection type E is against F power-like amplifier match circuits |
| CN113452249A (en) * | 2021-06-23 | 2021-09-28 | 天津大学 | Novel fully-integrated boost dc/dc converter based on heterogeneous integration |
| CN115589134A (en) * | 2022-10-08 | 2023-01-10 | 中南大学 | Cascading resonance driving structure of class-E inverter and design method |
-
2017
- 2017-04-14 CN CN201720389963.4U patent/CN206620103U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108736845A (en) * | 2017-04-14 | 2018-11-02 | 天津大学（青岛）海洋工程研究院有限公司 | A kind of high efficiency parallel connection type E is against F power-like amplifier match circuits |
| CN113452249A (en) * | 2021-06-23 | 2021-09-28 | 天津大学 | Novel fully-integrated boost dc/dc converter based on heterogeneous integration |
| CN115589134A (en) * | 2022-10-08 | 2023-01-10 | 中南大学 | Cascading resonance driving structure of class-E inverter and design method |
| CN115589134B (en) * | 2022-10-08 | 2023-05-23 | 中南大学 | E-type inverter cascade resonance driving structure and design method |
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