CN108736845A - A kind of high efficiency parallel connection type E is against F power-like amplifier match circuits - Google Patents
A kind of high efficiency parallel connection type E is against F power-like amplifier match circuits Download PDFInfo
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- CN108736845A CN108736845A CN201710243180.XA CN201710243180A CN108736845A CN 108736845 A CN108736845 A CN 108736845A CN 201710243180 A CN201710243180 A CN 201710243180A CN 108736845 A CN108736845 A CN 108736845A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
- H03F3/2176—Class E amplifiers
Abstract
A kind of high efficiency parallel connection type E is against F power-like amplifier match circuits, and parallel connection type E is against F class circuits between transistor output and load impedance, and parallel connection type E power-like amplifiers are by L, C in parallel and concatenated L0、C0Composition, inverse F class higher hamonic wave control circuits are by concatenated Ln、CnComposition, biased electrical routing power VbbTo the circuit and power supply V of transistor baseccCircuit to transistor collector forms, and power amplification structure is the power tube of common emitter, and the input terminal of power tube is base stage, and output end is collector；The match circuit is under the premise of meeting boundary condition of the classics E power-like amplifiers when off state is switched to conducting state, introduce the higher hamonic wave control circuit of inverse F classes, to while effectively realizing high efficiency power amplifier, requirement of the transistor for breakdown voltage is reduced, has achieved the effect that utilize E power-like amplifiers in wider scope；And other power amplifiers will be big compared to E classes for its power output capacity.
Description
Technical field
The present invention relates to wirelessly communicate power amplifier technology field more particularly to a kind of high efficiency parallel connection type E against F class power amplifications
Device.
Background technology
Currently, with the further development of mobile communication system, power amplifier has been widely used in communication system,
The current communications field leads to as portable cellular terminal, the reduction of base station equidimension and the reduction of weight and forth generation move
The use of letter system, communication system are higher and higher to efficiency power amplifier and linearity.Therefore high efficiency power amplification
Device can become the crucial composition part of future communications terminal, and the design of high efficiency power amplifier will also become power amplifier and study
The hot spot in field.In efficiency power amplifier, switching mode E power-like amplifiers are wherein most basic one kind.
E power-like amplifiers are because transistor undergoes conducting and cut-off state in turn, by reducing transistor current and voltage
The degree of overlapping reduces the consumption power of transistor itself, in theory reach 100% efficiency.Classical E classes
Power amplifier is several by transistor, shunt capacitance, the series LC resonant circuit of fundamental wave, concatenated residual induction and biasing circuit
Module composition.Physical circuit is as shown in Figure 1.Classical E power-like amplifiers are switched to conducting shape by meeting in off state
Boundary condition when state, i.e.,：Zero voltage switch and the conversion of no-voltage derivative so that transistor current is with voltage overlapping degree
Zero, to reach theoretical efficiency 100%.
The parallel type E power-like amplifiers proposed by Grebennikov have followed the height of switch power-like amplifier
Efficiency feature.Its circuit structure is by transistor, parallel LC circuit, the series LC resonant circuit of fundamental wave and the several modules of biasing circuit
It constitutes.Physical circuit is as shown in Figure 2.Its principle is consistent with classical E power-like amplifiers, equally to meet and be cut in off state
Change to boundary condition when conducting state.But compared to classical E power-like amplifiers, parallel connection type E power-like amplifiers for
The breakdown current of transistor requires lower, maximum carrier frequency higher, thus parallel connection type E power-like amplifiers are designed to one
The research field of a hot topic.
For classical E power-like amplifiers, document [1] has carried out it to derive and reasonably explain, successfully by E classes
Power amplifier is brought into the visual field of people.And in recent years, the research of parallel connection type E power-like amplifiers also quietly starts to walk.Document
[2] basic structure of parallel connection type E power-like amplifiers is proposed.And to propose E power-like amplifiers in parallel novel for document [3]
Topological structure, the research for parallel connection E power-like amplifiers provide new approaches.Document [4] proposes E against F power-like amplifiers
Structure, for the present invention provides theoretical foundations.
【Bibliography】
[1] F. H. Raab, " Idealized Operation of the Class E Tuned Power
Amplifier, " IEEE Trans. Circuits and Systems, Vol. CAS-24, pp. 725-735, Dec.
1977。
[2] A. Grebennikov and H. Jaeger, " Class E with parallel circuit-A
New challenge for high-efficiency RF and microwave power amplifiers, " in
IEEEMTT-S Int. Microw. Symp. Dig., 2002, vol. 3, pp. 1627-1630.
[3] Jesus Cumana and Andrei Grebennikov, " An Extended Topology of
Parallel-CircuitClass-E Power Amplifier to Account for Larger Output
Capacitances " IEEE Transactionson Microwave Theory and Techniques, vol. 59,
No. 2011 12, Dec..
[4] A. Grebennikov, " High-Efficiency Class E/F Lumped
andTransmission-Line Power Amplifiers” IEEE Transactionson Microwave Theory
And Techniques, vol. 59, no. 6, Dec. 2011.
Invention content
For problems of the prior art, present invention incorporates parallel connection type E classes power amplifiers and classical inverse F classes power to put
The structure of big device, innovative proposes a kind of while having parallel connection type E power-like amplifiers and inverse F power-like amplifier impedances
The E of condition is meeting boundary of the classics E power-like amplifiers when off state is switched to conducting state against F power amplifiers
Under the premise of condition, the higher hamonic wave control circuit of inverse F classes is introduced, to effectively realize the same of high efficiency power amplifier
When, requirement of the transistor for breakdown voltage is reduced, has achieved the effect that utilize E power-like amplifiers in wider scope；And
And other power amplifiers will be big compared to E classes for its power output capacity.
Against F power-like amplifier match circuits, functional block diagram is as shown in Figure 3 by a kind of high efficiency parallel connection type E.Transistor is defeated
Outlet includes：Parallel connection type E power-like amplifiers circuit, inverse F class higher hamonic wave control circuits and transistor bias circult.It is described simultaneously
Connection type E is against F class circuits between transistor output and load impedance, and the parallel connection type E power-like amplifiers are by parallel connection
LC and concatenated L0、C0Composition.The inverse F classes higher hamonic wave control circuit is by concatenated Ln、CnComposition.The biasing
Electric routing power VbbTo the circuit and power supply V of transistor baseccCircuit to transistor collector forms.The power amplification
Structure is the power tube of common emitter, and the input terminal of the power tube is base stage, and output end is collector.
Classical parallel connection type E is as shown in Figure 3 against F power amplifier circuits.Laod network is by shunt inductance L, shunt capacitance
C, for the series connection L of nth harmonic resonancenCnThe series connection L of circuit, fundamental wave0C0Resonance circuit, load R are constituted.Here, transistor quilt
Regard a perfect switch switched in the case where turning off to conducting state as.Therefore, when switch is in open-circuit condition, transistor current collection
Pole tension waveform is determined by the of short duration response of laod network.
Here, for easy analysis, we have following several hypothesis：
The knee-point voltage of transistor is zero, and resistance when saturation is zero, and resistance when shutdown is infinity.And transistor quilt
It is considered as lossless and transient change switch.
Shunt capacitance C is linear.
Concatenated resonance circuit is under nth harmonic, impedance zero；Under other harmonic waves, impedance is infinity.
Entire circuit is lossless other than load.
Connect L0C0Resonance circuit is tuned under fundamental frequency, and its quality factor is sufficiently large.
The transistor switch condition of classical E power-like amplifiers can be write as：
Here voltage refers to the voltage of switch ends.
Flow through the electric current i of loadRWith the electric current i of nth harmonicnIt is sine wave, therefore can be written to：
Here, IRIt is the amplitude of electric current under fundamental frequency, InIt is the amplitude of electric current under nth harmonic,It is the initial phase of electric current.
When switch is when 0≤ω t≤π are opened, the voltage v of switch ends and the electric current i for flowing through shunt capacitanceCAll etc.
In zero.Therefore, v (ω t)=Vdd – vL(ω t)=0, and iC(ωt) = ωC[dv(ωt)/d(ωt)] = 0.So stream
Load current i can be written to by crossing the electric current of switchR(ω t), nth harmonic electric current inElectric current i on (ω t) and inductanceL(ωt)
The sum of, i.e.,：
For initial open state, i (0)=0.In ω t=0, the electric current i of DC feedback inductance L is flowed throughL(ω t) can
To be write as
Therefore：
For arbitrary n, harmonic current InAmplitude can be written to：
Here：
Therefore, the electric current I of nth harmonicnWith the electric current I under fundamental frequencyRRatio can be written to:
When switch is when the π of π≤ω t≤2 are off state, the electric current i (ω t) for flowing through switch is equal to zero.And it flows through simultaneously
Join the electric current i of capacitanceC(ω t) can be expressed as the electric current i on inductanceLElectric current i on (ω t), nth harmonic circuitn(ωt)
With the electric current i in loadRThe sum of (ω t), i.e.,：
According to primary condition v (π)=0 He.Above-mentioned equation can be expressed as second order non-linear
The property differential equation：
Its general solution form can be write as：
Here
Coefficient C1And C2It can be acquired by the boundary condition of ω t=π.
Direct current supply voltage VddIt can be expressed as（13）Fourier expansion formula：
Since the drain voltage under fundamental frequency is added in load completely, reaction component is necessary for 0, i.e.,：
Therefore, for specific triple-frequency harmonics tuning circuit, i.e. n=3.Pass through（1）,（15）With（16）, we are solvable wherein
Three unknown parameters value：
In Fig. 4 (a)-(e), when ω t are in [π, 2 π], the normalization of ideal paralle type E against F3 type power amplifiers drains
Voltage, drain current, the electric current for flowing through capacitance, the electric current for flowing through 3 subharmonic and load current are demonstrated out.From drain electrode electricity
The waveform of pressure and drain current can be seen that：When the transistor is switched, no any voltage on switch, and flow through the electricity of switch
Stream is made of DC current, triple harmonic current, load current.However, when transistor is off state, all electric currents are equal
Flow to shunt capacitance.In this case, drain voltage and electric current not will produce overlapping, therefore ideal drain efficiency is 100%.
Flow through the electric current i under the fundamental frequency of switch1(ω t) can there are two quadrature components to form, iRAnd iX.Its is equivalent
Circuit is as shown in Figure 5.Their amplitude can be acquired by Fourier expansion：
Therefore, the angle of the voltage and electric current at fundamental frequency lower switch both ends can be expressed as
On the other hand, phase angle can be expressed as the function of load elements, i.e.,：
Therefore, shunt inductance and shunt capacitance can obtain：
Meanwhile load R can also direct current supply voltage VddWith output power PoutIt shows：
In addition, the circuit parameter selection of series resonant circuit depends on the quality factor q of loadL, and his value it is more big more
It is good.Therefore, circuit parameter can obtain：
Peak drain voltage and drain current can pass through（5）,（13）,（14）,（17）-（19）It acquires：
Parallel connection type E is against F as can be seen from the above equation3Peak value of the power amplifier crest voltage compared to classical E power-like amplifiers
Voltage has dropped 13.4%.
The performance indicator of another power amplifier-power output capacity cp, Ke Yiyong（28）With（29）It shows
Maximum operating frequency fmaxIt can pass through（25）It obtains, C here should be the output capacitance C of deviceout
His value is classical E power-like amplifiers fmax1.38 times.
Specific classics E classes power amplifier, parallel connection type E classes power amplifier, E are against F3Type power amplifier and parallel connection type E are against F3The comparison of class power amplifier
| High efficiency power amplifier type | V dd/V max | I max/I 0 | c p | K f |
| Classical E power-like amplifiers | 3.56 | 2.84 | 0.0981 | 0.0506 |
| E power-like amplifiers in parallel | 3.647 | 2.647 | 0.1036 | 0.0798 |
| E is against F3Power amplifier | 3.142 | 3.056 | 0.1041 | 0.0506 |
| Parallel connection type E is against F3 power amplifiers | 3.279 | 2.915 | 0.1046 | 0.0698 |
As shown above.
A kind of high efficiency parallel connection type E is improved E power-like amplifiers in parallel against F power-like amplifiers match circuit,
Creative proposes a kind of new structure, by the way that the circuit structure of inverse F classes is added, is keeping switch power-like amplifier efficient
While rate advantage, not only so that the breakdown voltage requirement of transistor is lower, but also maximum carrier frequency higher, it effectively improves
The performance of circuit, to provide possibility using power amplifier in wider scope.
Description of the drawings
Fig. 1 is the circuit diagram of classical E power-like amplifiers；
Fig. 2 is a kind of functional block diagram of high efficiency parallel connection type E power-like amplifiers；
Fig. 3 is a kind of functional block diagram of high efficiency parallel connection type E against F power-like amplifiers；
Fig. 4（a）It is normalization drain voltage waveforms of the ideal paralle type E against F3 type power amplifiers；
Fig. 4（b）It is ideal paralle type E against F3 type power amplifier drain current wavefonn figures；
Fig. 4（c）It is the current waveform figure that ideal paralle type E flows through capacitance against F3 type power amplifiers；
Fig. 4（d）It is the current waveform figure that ideal paralle type E flows through 3 subharmonic against F3 type power amplifiers；
Fig. 4（e）It is ideal paralle type E against F3 type power amplifier load current waveform figures；
Fig. 5 is a kind of high efficiency parallel connection type E against equivalent circuit diagram under the conditions of the fundamental wave of F power-like amplifiers；
Fig. 6 is the circuit diagram to parallel connection type E against F3 power amplifier specific implementation modes by microstrip line；
Fig. 7（a）It is the circuit structure that laod network is seen into from drain electrode under triple-frequency harmonics；
Fig. 7（b）It is the circuit structure that laod network is seen into from drain electrode under second harmonic；
Fig. 7（c）It is the circuit structure that laod network is seen into from drain electrode under fundamental wave.
Specific implementation mode
Illustrate technical scheme of the present invention in order to clearer, the present invention is made with reference to the accompanying drawings and examples further
Explanation.It for those of ordinary skill in the art, without creative efforts, can also be according to these attached drawings
Obtain other attached drawings.
It is derived according to above-mentioned theory, we are flashed using microstrip line.Physical circuit figure is as indicated with 6.Transmission line TL1-TL4Group
At harmonic controling circuit, transmission line TL5-TL6Constitute impedance of fundamental frequency match circuit.For easy analysis, it will be assumed that all
The characteristic impedance of transmission line is Z0。
Fig. 7（a）It indicates under triple-frequency harmonics, the circuit structure that laod network is seen into from drain electrode.Due to open stub
TL2Impedance under triple-frequency harmonics is zero, and short-circuit condition is presented.So Znet(3 ω 0)=0, meets laod network triple-frequency harmonics
Condition.
Fig. 7（b）It indicates under second harmonic, the circuit structure that laod network is seen into from drain electrode.Due to closed stub
TL2Impedance under second harmonic is zero, and short-circuit condition is presented.Meanwhile transmission line TL1、TL2Resonance is constituted under second harmonic,
So that its overall performance is open-circuit condition.So equivalent circuit only has transmission line TL3.Therefore, transmission line TL3Under second harmonic
Impedance can be expressed as：
On the other hand, according to schematic diagram 3, under second harmonic, the laod network seen from drain electrode is made of LC parallel circuits,
Impedance can be expressed as：
Therefore, simultaneous（24）,（25）,（2）, under second harmonic the impedance of laod network be equal to：
Here,.Pass through simultaneous（1）With（3）, transmission line TL3Electrical length can be expressed as：
Here k takes value appropriate to makeTake minimum positive value.
Fig. 7（c）It indicates under fundamental wave, the circuit structure that laod network is seen into from drain electrode.Due to closed stub TL2?
Impedance under fundamental wave is zero, short-circuit condition is presented, therefore equivalent circuit is i.e. such as Fig. 7（c）It is shown.
First, according to shown in schematic diagram 3, under the conditions of fundamental wave, the laod network seen into from drain electrode is by RLC parallel circuit groups
At.Therefore laod networkIt can be expressed as：
Here, simultaneous（24）,（25）With（5）, fundamental wave laod networkIt can be expressed as:
Therefore：
Secondly, from reference planes V1The admittance for the fundamental wave laod network seenTL can be passed through1、TL2WithIt obtains：
Here k is equal to：
Therefore, from reference planes V1The impedance for the fundamental wave laod network seenIt can be expressed as：
Since from reference planes V1The impedance for the fundamental wave laod network seenIt has obtained, it is clear that from reference planes
V2The impedance for the fundamental wave laod network seenIt can be byAnd TL3It obtains：
Therefore, according to（11）From reference planes V2The impedance for the fundamental wave laod network seenIt can be expressed as：
Basis again（10）With（12）, from reference planes V2The impedance for the fundamental wave laod network seenIt can be expressed as：
Here, whenBy（4）After decision, R2And X2Value also can determine.
Finally, no matter X2Value be just or negative, fundamental wave laod networkL-type transmission line can always be passed through
TL5And TL6Realize the impedance matching to 50 ohm.
In actual design, transistor selects the 10 W GaN HEMT transistors of model Cree CGH40010F.It is right
The transistor is as follows by the concrete numerical value for the parasitic component that manufacturer provides：Parasitic capacitance C between transistor drain and source electrodeds
=1.2 pF, parasitic inductance Ld=0.55 nH, encapsulation parasitic capacitance Cp = 0.2 pF。
Claims (3)
1. a kind of high efficiency parallel connection type E is against F power-like amplifier match circuits, it is characterised in that：Transistor output includes：And
Connection type E power-like amplifiers circuit, inverse F class higher hamonic wave control circuits and transistor bias circult；The parallel connection type E is against F classes
Circuit is between transistor output and load impedance.
2. a kind of high efficiency parallel connection type E is against F power-like amplifier match circuits according to claim 1, it is characterised in that：Institute
The parallel connection type E power-like amplifiers stated are by L, C in parallel and concatenated L0、C0Composition；The inverse F classes higher hamonic wave control electricity
It route concatenated Ln、CnComposition；The biased electrical routing power VbbTo the circuit and power supply V of transistor baseccTo transistor
The circuit of collector forms；The power amplification structure is the power tube of common emitter, and the input terminal of the power tube is base stage, defeated
Outlet is collector.
3. a kind of high efficiency parallel connection type E is against F power-like amplifier match circuits according to claim 1, it is characterised in that：It is negative
Contained network network by shunt inductance L, shunt capacitance C, for the series connection L of nth harmonic resonancenAnd CnThe series connection L of circuit, fundamental wave0And C0It is humorous
Shake circuit, load R constitute；Transistor is seen as a perfect switch switched in the case where turning off to conducting state；When switch is in
When open-circuit condition, transistor collector voltage waveform is determined by the of short duration response of laod network.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109660210A (en) * | 2018-11-16 | 2019-04-19 | 天津大学 | Harmonic injection suitable for inverse F class high efficiency power amplifier is theoretical |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109660210A (en) * | 2018-11-16 | 2019-04-19 | 天津大学 | Harmonic injection suitable for inverse F class high efficiency power amplifier is theoretical |
| CN109660210B (en) * | 2018-11-16 | 2023-01-13 | 天津大学 | Harmonic injection theory suitable for inverse class-F high-efficiency power amplifier |
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